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1. 发明申请

US20080151441A1 MAGNETORESISTIVE SENSOR HAVING AN ANISOTROPIC HARD BIAS WITH HIGH COERCIVITY 有权
标题翻译：具有高可靠性的ANISOTROPIC硬偏差磁传感器
公开(公告)号：US20080151441A1
公开(公告)日：2008-06-26
申请号：US11615825
申请日：2006-12-22
申请人： James Mac Freitag , Mustafa Michael Pinarbasi , Wipul Pemsiri Jayasekara
发明人： James Mac Freitag , Mustafa Michael Pinarbasi , Wipul Pemsiri Jayasekara
IPC分类号： G11B5/33 , B05D5/12
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3932
摘要： A magnetoresistive sensor having magnetically anisotropic bias layers for biasing the free layer of the sensor. The sensor includes a sensor stack with a pinned layer structure and a free layer structure and having first and second sides. Hard bias structures for biasing the magnetization of the free layer are formed at either side of the sensor stack, and each of the hard bias structure includes a hard magnetic layer that has a magnetic anisotropy to enhance the stability of the biasing. The hard bias structure can include a Cr under-layer having a surface that has been treated by a low power angled ion milling to form it with an anisotropic surface texture. A layer of Cr—Mo alloy is formed over the Cr under-layer and the hard magnetic material layer is formed over the Cr—Mo alloy layer. The anisotropic surface texture of the Cr layer induces an aligned crystalline structure in the hard magnetic layer that causes the hard magnetic layer to have a magnetic anisotropy. In another embodiment, the hard bias structure can include a layer of Ta that has a surface formed with the anisotropic roughness. A layer of Cr—Mo alloy is formed over the Ta layer and the hard magnetic layer is formed over the Cr—Mo alloy layer. In yet another embodiment, the hard bias structure includes first and second Ta layers with a Si layer sandwiched between them. The second Ta layer has a surface treated with the anisotropic texture. A layer of Cr—Mo alloy can then be formed over the second Ta layer and the hard magnetic material formed over the Cr—Mo alloy layer.
摘要翻译：具有用于偏置传感器自由层的磁各向异性偏置层的磁阻传感器。传感器包括具有钉扎层结构和自由层结构并具有第一和第二侧面的传感器堆叠。在传感器堆叠的任一侧形成用于偏置自由层的磁化的硬偏置结构，并且每个硬偏置结构都包括具有磁各向异性以增强偏置稳定性的硬磁性层。硬偏压结构可以包括具有通过低功率角度离子铣削处理以形成各向异性表面纹理的表面的Cr底层。在Cr底层上形成Cr-Mo合金层，在Cr-Mo合金层上形成硬磁性体层。 Cr层的各向异性表面结构在硬磁性层中引起对准的结晶结构，使得硬磁性层具有磁各向异性。在另一个实施例中，硬偏压结构可以包括具有由各向异性粗糙度形成的表面的Ta层。在Ta层上形成一层Cr-Mo合金，在Cr-Mo合金层上形成硬磁性层。在另一个实施例中，硬偏置结构包括夹在它们之间的Si层的第一和第二Ta层。第二Ta层具有用各向异性结构处理的表面。然后可以在第二Ta层上形成Cr-Mo合金层，并在Cr-Mo合金层上形成硬磁性材料。

2. 发明申请

US20080112090A1 Magnetic recording head with overlaid leads 有权
标题翻译：带重叠导线的磁记录头
公开(公告)号：US20080112090A1
公开(公告)日：2008-05-15
申请号：US11595186
申请日：2006-11-09
申请人： James Mac Freitag , David Eugene Heim , Kuok San Ho , Wipul Pemsiri Jayasekara , Kim Y. Lee , Tsann Lin , Jyh-Shuey Lo , Mustafa Michael Pinarbasi , Ching Hwa Tsang
发明人： James Mac Freitag , David Eugene Heim , Kuok San Ho , Wipul Pemsiri Jayasekara , Kim Y. Lee , Tsann Lin , Jyh-Shuey Lo , Mustafa Michael Pinarbasi , Ching Hwa Tsang
IPC分类号： G11B5/33
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A lead overlay design of a magnetic sensor is described with sensor and free layer dimensions such that the free layer is stabilized by the large demagnetization field due to the shape anisotropy. In one embodiment the giant magnetoresistive (GMR) effect under the leads is destroyed by removing the antiferromagnetic (AFM) and pinned layers above the free layer. The overlaid lead pads are deposited on the exposed spacer layer at the sides of the mask that defines the active region. In other embodiment a layer of electrically insulating material is deposited over the sensor to encapsulate it and thereby insulate it from contact with the hardbias structures. Various embodiments with self-aligned leads are also described. In a variation of the encapsulation embodiment, the insulating material is also deposited under the lead pads so the electrical current is channeled through the active region of the sensor and sidewall deposited lead pads.
摘要翻译：用传感器和自由层尺寸描述磁传感器的引线覆盖设计，使得由于形状各向异性，自由层由大的退磁场稳定。在一个实施例中，引线下的巨磁阻（GMR）效应通过去除自由层上方的反铁磁（AFM）和固定层而被破坏。覆盖的引线焊盘沉积在限定有源区的掩模侧面上的暴露间隔层上。在另一个实施例中，电绝缘材料层沉积在传感器上以将其封装并由此使其与硬质合金结构的接触绝缘。还描述了具有自对准引线的各种实施例。在封装实施例的变型中，绝缘材料也沉积在引线焊盘下方，使得电流通过传感器的有源区域和侧壁沉积的引线焊盘。

3. 发明授权

US08266785B2 Method for manufacturing a magnetoresistive sensor having a novel junction structure for improved track width definition and pinned layer stability 失效
标题翻译：一种用于制造具有新颖的结结构的磁阻传感器的方法，用于改善轨道宽度的定义和固定层的稳定性
公开(公告)号：US08266785B2
公开(公告)日：2012-09-18
申请号：US11938690
申请日：2007-11-12
申请人： James Mac Freitag , Wipul Pemsiri Jayasekara , Mustafa Michael Pinarbasi
发明人： James Mac Freitag , Wipul Pemsiri Jayasekara , Mustafa Michael Pinarbasi
IPC分类号： G11B5/187 , B44C1/22
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3903 , G11B5/398 , G11B2005/0016 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for manufacturing a magnetoresistive sensor having improved pinned layer stability at small track widths. The method includes providing a substrate, and depositing a plurality of sensor layers. A layer of material that is resistant to removal by chemical mechanical polishing (CMP stop layer) and an antireflective coating layer are deposited. A photoresist mask is formed on the antireflective layer, and a reactive ion etch (RIE) is performed to remove portions of the ion mill resistant mask that are not covered by the photoresist mask, the RIE being performed in a plasma chamber having a platen, the performing the RIE further comprising applying a platen power of at least 70 W. An ion milling is performed to remove a portion of the sensor layers, the ion milling being terminating before all of the sensor materials have been removed.
摘要翻译：一种用于制造磁阻传感器的方法，其具有在小轨道宽度下具有改进的钉扎层稳定性。该方法包括提供衬底和沉积多个传感器层。沉积耐化学机械抛光（CMP停止层）和抗反射涂层去除的材料层。在抗反射层上形成光致抗蚀剂掩模，并且执行反应离子蚀刻（RIE）以除去未被光致抗蚀剂掩模覆盖的部分耐离子磨损掩模，RIE在具有压板的等离子体室中进行，执行RIE还包括施加至少70W的压板功率。执行离子铣削以去除传感器层的一部分，离子铣削在所有传感器材料已经被去除之前终止。

4. 发明授权

US07652855B2 Magnetic sensor with extended free layer and overlaid leads 有权
标题翻译：具有扩展自由层和重叠导线的磁性传感器
公开(公告)号：US07652855B2
公开(公告)日：2010-01-26
申请号：US11595186
申请日：2006-11-09
申请人： James Mac Freitag , David Eugene Heim , Kuok San Ho , Wipul Pemsiri Jayasekara , Kim Y. Lee , Tsann Lin , Jyh-Shuey Lo , Mustafa Michael Pinarbasi , Ching Hwa Tsang
发明人： James Mac Freitag , David Eugene Heim , Kuok San Ho , Wipul Pemsiri Jayasekara , Kim Y. Lee , Tsann Lin , Jyh-Shuey Lo , Mustafa Michael Pinarbasi , Ching Hwa Tsang
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A lead overlay design of a magnetic sensor is described with sensor and free layer dimensions such that the free layer is stabilized by the large demagnetization field due to the shape anisotropy. In one embodiment the giant magnetoresistive (GMR) effect under the leads is destroyed by removing the antiferromagnetic (AFM) and pinned layers above the free layer. The overlaid lead pads are deposited on the exposed spacer layer at the sides of the mask that defines the active region. In other embodiment a layer of electrically insulating material is deposited over the sensor to encapsulate it and thereby insulate it from contact with the hardbias structures. Various embodiments with self-aligned leads are also described. In a variation of the encapsulation embodiment, the insulating material is also deposited under the lead pads so the electrical current is channeled through the active region of the sensor and sidewall deposited lead pads.
摘要翻译：用传感器和自由层尺寸描述磁传感器的引线覆盖设计，使得由于形状各向异性，自由层由大的退磁场稳定。在一个实施例中，引线下的巨磁阻（GMR）效应通过去除自由层上方的反铁磁（AFM）和固定层而被破坏。覆盖的引线焊盘沉积在限定有源区的掩模侧面上的暴露间隔层上。在另一个实施例中，电绝缘材料层沉积在传感器上以将其封装并由此使其与硬质合金结构的接触绝缘。还描述了具有自对准引线的各种实施例。在封装实施例的变型中，绝缘材料也沉积在引线焊盘下方，使得电流通过传感器的有源区域和侧壁沉积的引线焊盘。

5. 发明授权

US07497008B2 Method of fabricating a thin film magnetic sensor on a wafer 失效
标题翻译：在晶片上制造薄膜磁传感器的方法
公开(公告)号：US07497008B2
公开(公告)日：2009-03-03
申请号：US11211877
申请日：2005-08-24
申请人： Tsung Yuan Chen , Frederick Hayes Dill , James Mac Freitag , Kuok San Ho , Wipul Pemsiri Jayasekara , Kim Y. Lee , Mustafa Michael Pinarbasi , Ching Hwa Tsang , Patrick Rush Webb
发明人： Tsung Yuan Chen , Frederick Hayes Dill , James Mac Freitag , Kuok San Ho , Wipul Pemsiri Jayasekara , Kim Y. Lee , Mustafa Michael Pinarbasi , Ching Hwa Tsang , Patrick Rush Webb
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3932 , G11B5/3929 , G11B5/398 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： An embodiment of the invention is a magnetic head with overlaid lead pads that contact the top surface of the sensor between the hardbias structures and do not contact the hardbias structures which are electrically insulated from direct contact with the sensor. The lead pad contact area on the top of the sensor is defined by sidewall deposition of a conductive material to form leads pads on a photoresist prior to formation of the remainder of the leads. The conductive material for the lead pads is deposited at a shallow angle to maximize the sidewall deposition on the photoresist, then ion-milled at a high angle to remove the conductive material from the field while leaving the sidewall material. An insulation layer is deposited on the lead material at a high angle, then milled at a shallow angle to remove insulation from the sidewall.
摘要翻译：本发明的一个实施例是具有覆盖的引线焊盘的磁头，该焊盘在硬质合金结构之间接触传感器的顶表面，并且不接触与传感器直接接触的电绝缘的硬质合金结构。传感器顶部的引线焊盘接触区域由导电材料的侧壁沉积限定，以在形成其余引线之前在光致抗蚀剂上形成引线焊盘。用于引线焊盘的导电材料以浅角度沉积，以使光致抗蚀剂上的侧壁沉积最大化，然后以高角度离子研磨，以从外界移除导电材料同时留下侧壁材料。绝缘层以高角度沉积在引线材料上，然后以浅角度铣削以除去与侧壁的绝缘。

6. 发明授权

US07848065B2 Magnetoresistive sensor having an anisotropic hard bias with high coercivity 有权
标题翻译：具有高矫顽力的各向异性硬偏置的磁阻传感器
公开(公告)号：US07848065B2
公开(公告)日：2010-12-07
申请号：US11615825
申请日：2006-12-22
申请人： James Mac Freitag , Mustafa Michael Pinarbasi , Wipul Pemsiri Jayasekara
发明人： James Mac Freitag , Mustafa Michael Pinarbasi , Wipul Pemsiri Jayasekara
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3932
摘要： A magnetoresistive sensor having magnetically anisotropic bias layers for biasing the free layer of the sensor. Hard bias structures for biasing the magnetization of the free layer are formed at either side of the sensor stack, and each of the hard bias structure includes a hard magnetic layer that has a magnetic anisotropy to enhance the stability of the biasing. The hard bias structure can include a Cr under-layer having a surface that has been treated by a low power angled ion milling to form it with an anisotropic surface texture. A layer of Cr—Mo alloy is formed over the Cr under-layer and the hard magnetic material layer is formed over the Cr—Mo alloy layer. The anisotropic surface texture of the Cr layer induces an aligned crystalline structure in the hard magnetic layer that causes the hard magnetic layer to have a magnetic anisotropy.
摘要翻译：具有用于偏置传感器自由层的磁各向异性偏置层的磁阻传感器。在传感器堆叠的任一侧形成用于偏置自由层的磁化的硬偏置结构，并且每个硬偏置结构都包括具有磁各向异性以增强偏置稳定性的硬磁性层。硬偏压结构可以包括具有通过低功率角度离子铣削处理以形成各向异性表面纹理的表面的Cr底层。在Cr底层上形成Cr-Mo合金层，在Cr-Mo合金层上形成硬磁性体层。 Cr层的各向异性表面结构在硬磁性层中引起对准的结晶结构，使得硬磁性层具有磁各向异性。

7. 发明授权

US08068315B2 Current perpendicular to plane GMR and TMR sensors with improved magnetic properties using Ru/Si seed layers 有权
标题翻译：电流垂直于平面GMR和TMR传感器具有改进的磁性能使用Ru / Si种子层
公开(公告)号：US08068315B2
公开(公告)日：2011-11-29
申请号：US11862119
申请日：2007-09-26
申请人： James Mac Freitag , Hardayal Singh Gill , Mustafa Michael Pinarbasi
发明人： James Mac Freitag , Hardayal Singh Gill , Mustafa Michael Pinarbasi
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B2005/3996
摘要： A magnetoresisive sensor having a thin seed layer that provides an exceptionally smooth interface between layers of the sensor stack. The exceptionally smooth interface provided by the seed layer reduces interlayer exchange coupling allowing the non-magnetic spacer layer (or barrier layer) to be very thin. The seed layer includes a thin layer of Ru and a thin layer of Si which intermix to form a homogeneous, amorphous thin seed layer of Ru-silicide.
摘要翻译：具有薄种子层的磁感应传感器，其在传感器堆叠的层之间提供非常平滑的界面。由种子层提供的非常平滑的界面减少层间交换耦合，使得非磁性间隔层（或阻挡层）非常薄。种子层包括Ru的薄层和Si的薄层，其混合以形成Ru-硅化物的均匀的非晶态薄晶种层。

8. 发明授权

US07697246B2 Magnetoresistive sensor having biasing AFM layer in contact with free layer and a track width defined by a lead contact area 有权
标题翻译：具有偏置AFM层与自由层接触的磁阻传感器和由引线接触区域限定的轨道宽度
公开(公告)号：US07697246B2
公开(公告)日：2010-04-13
申请号：US11502955
申请日：2006-08-10
申请人： James Mac Freitag , Kuok San Ho , Mustafa Michael Pinarbasi , Ching Hwa Tsang
发明人： James Mac Freitag , Kuok San Ho , Mustafa Michael Pinarbasi , Ching Hwa Tsang
IPC分类号： G11B5/39
CPC分类号： H01L43/10 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/398
摘要： A current perpendicular to plane (CPP) magnetoresistive sensor having a current path defined by first and second overlying insulation layers between which an electrically conductive lead makes content with a surface of the sensor stack. The current path being narrower than the width of the sensor stack allows the outer edges of the sensor stack to be moved outside of the active area of the sensor. This results in a sensor that is unaffected by damage at outer edges of the sensor layers. The sensor stack includes a free layer that is biased by direct exchange coupling with a layer of antiferromagnetic material (AFM layer). The strength of the exchange field can be controlled by adding Cr to the AFM material to ensure that the exchange field is sufficiently weak to avoid pinning the free layer.
摘要翻译：一种垂直于平面（CPP）磁阻传感器的电流，其具有由第一和第二上覆绝缘层限定的电流路径，导电引线与传感器堆叠的表面成为内容。当前路径比传感器堆叠的宽度窄，允许传感器堆叠的外边缘移动到传感器的有效区域之外。这导致传感器不受传感器层外边缘损坏的影响。传感器堆叠包括通过与反铁磁材料层（AFM层）的直接交换耦合而偏置的自由层。可以通过向AFM材料添加Cr来控制交换场的强度，以确保交换场足够弱以避免固定自由层。

9. 发明授权

US07580230B2 Magnetoresistive sensor having shape enhanced pinning, a flux guide structure and damage free virtual edges 有权
标题翻译：具有形状增强钉扎，磁通导向结构和无损虚拟边缘的磁阻传感器
公开(公告)号：US07580230B2
公开(公告)日：2009-08-25
申请号：US11588013
申请日：2006-10-24
申请人： James Mac Freitag , Kuok San Ho , Mustafa Michael Pinarbasi , Ching Hwa Tsang
发明人： James Mac Freitag , Kuok San Ho , Mustafa Michael Pinarbasi , Ching Hwa Tsang
IPC分类号： G11B5/39 , G11B5/33
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B2005/3996
摘要： A magnetoresistive sensor having a shape enhanced pinning and a flux guide structure. First and second hard bias layers and lead layers extend from the sides of a sensor stack. The hard bias layers and leads have a stripe height that is smaller than the stripe height of a free layer, resulting in a free layer that extends beyond the back edge of the lead and hard bias layer. This portion of the free layer that extends beyond the back edge of the leads and hard bias layers provides a back flux guide. Similarly, the sensor may have a free layer that extends beyond the front edge of the lead and hard bias layers to provide a front flux guide. The pinned layer extends significantly beyond the back edge of the free layer, providing the pinned layer with a strong shape enhanced magnetic anisotropy.
摘要翻译：具有形状增强的钉扎和磁通引导结构的磁阻传感器。第一和第二硬偏压层和引线层从传感器堆叠的侧面延伸。硬偏压层和引线具有小于自由层的条带高度的条纹高度，导致延伸超过引线和硬偏置层的后边缘的自由层。自由层的延伸超过引线和硬偏置层的后边缘的部分提供了反向通量引导件。类似地，传感器可以具有延伸超过引线和硬偏置层的前边缘的自由层，以提供前通量引导件。被钉扎层明显地延伸超过自由层的后边缘，为钉扎层提供强的形状增强的磁各向异性。

10. 发明申请

US20080094761A1 Magnetoresistive sensor having shape enhanced pinning, a flux guide structure and damage free virtual edges 有权
标题翻译：具有形状增强钉扎，磁通导向结构和无损虚拟边缘的磁阻传感器
公开(公告)号：US20080094761A1
公开(公告)日：2008-04-24
申请号：US11588013
申请日：2006-10-24
申请人： James Mac Freitag , Kuok San Ho , Mustafa Michael Pinarbasi , Ching Hwa Tsang
发明人： James Mac Freitag , Kuok San Ho , Mustafa Michael Pinarbasi , Ching Hwa Tsang
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B2005/3996
摘要： A magnetoresistive sensor having a shape enhanced pinning and a flux guide structure. The sensor includes a sensor stack with a pinned layer, spacer layer and pinned layer. First and second hard bias layers and lead layers extend from the sides of the sensor stack. The hard bias layers and leads have a stripe height that is smaller than the stripe height of the free layer, resulting in a free layer that extends beyond the back edge of the lead and hard bias layer. This portion of the free layer that extends beyond the back edge of the leads and hard bias layers provides a back flux guide. Similarly, the sensor may have a free layer that extends beyond the front edge of the lead and hard bias layers to provide a front flux guide. The pinned layer extends significantly beyond the back edge of the free layer, providing the pinned layer with a strong shape enhanced magnetic anisotropy. The sensor may have a lead over layer structure, with the sensor layers extending significantly beyond the inner ends of the leads, thereby moving the outer edges of the sensor layers outside of the track width of the sensor. This eliminates the effect of magnetic damage at the outer edges of the free layer.
摘要翻译：具有形状增强的钉扎和磁通引导结构的磁阻传感器。传感器包括具有被钉扎层，间隔层和钉扎层的传感器堆叠。第一和第二硬偏压层和引线层从传感器堆叠的侧面延伸。硬偏置层和引线具有小于自由层的条纹高度的条纹高度，导致延伸超过引线和硬偏置层的后边缘的自由层。自由层的延伸超过引线和硬偏置层的后边缘的部分提供了反向通量引导件。类似地，传感器可以具有延伸超过引线和硬偏置层的前边缘的自由层，以提供前通量引导件。被钉扎层明显地延伸超过自由层的后边缘，为钉扎层提供强的形状增强的磁各向异性。传感器可以具有超导层结构，其中传感器层明显地超过引线的内端，从而将传感器层的外边缘移动到传感器的轨道宽度之外。这消除了在自由层的外边缘处的磁损伤的影响。

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