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1. 发明申请

US20060067113A1 Methods for fabricating a magnetic keeper for a memory device 失效
标题翻译：用于制造用于存储器件的磁力保持器的方法
公开(公告)号：US20060067113A1
公开(公告)日：2006-03-30
申请号：US11132798
申请日：2005-05-19
申请人： William Witcraft , Lonny Berg , Alan Hurst , William Vavra , Mark Jenson
发明人： William Witcraft , Lonny Berg , Alan Hurst , William Vavra , Mark Jenson
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： An MRAM device comprising an array of MRAM elements, with each element having an MRAM bit influenced by a magnetic field from a current flowing through a conductor, also includes a magnetic keeper formed adjacent the conductor to advantageously alter the magnetic field. The magnetic keeper alters the magnetic field by concentrating the field within the keeper thereby reducing the extent in which fringe field exists, thus allowing the MRAM elements to be formed closer to increase the areal density of the MRAM device. Increase in magnetic field flux due to the magnetic keeper allows operation of the MRAM device with lowered power. Soft magnetic materials such as nickel iron, nickel iron cobalt, or cobalt iron may be used to form the magnetic keeper.
摘要翻译：一种包括MRAM元件阵列的MRAM器件，其中每个元件具有受来自流过导体的电流的磁场影响的MRAM位，还包括邻近导体形成的磁保持器，以有利地改变磁场。磁保持器通过将磁场集中在保持器内来改变磁场，从而减少了边缘场的存在范围，从而允许MRAM元件更接近地增加MRAM器件的面密度。由于磁力保持器引起的磁场通量的增加允许MRAM器件以较低的功率运行。可以使用诸如镍铁，镍铁钴或钴铁的软磁性材料来形成磁保持器。

2. 发明授权

US06914805B2 Method for building a magnetic keeper or flux concentrator used for writing magnetic bits on a MRAM device 失效
标题翻译：用于在MRAM设备上构建用于写磁头的磁力保持器或磁通集中器的方法
公开(公告)号：US06914805B2
公开(公告)日：2005-07-05
申请号：US10226623
申请日：2002-08-21
申请人： William F. Witcraft , Lonny Berg , Alan Hurst , William Vavra , Mark Jenson
发明人： William F. Witcraft , Lonny Berg , Alan Hurst , William Vavra , Mark Jenson
IPC分类号： G11C11/16 , G11C11/00
CPC分类号： G11C11/16
摘要： An MRAM device comprising an array of MRAM elements, with each element having an MRAM bit influenced by a magnetic field from a current flowing through a conductor, also includes a magnetic keeper formed adjacent the conductor to advantageously alter the magnetic field. The magnetic keeper alters the magnetic field by concentrating the field within the keeper thereby reducing the extent in which fringe field exists, thus allowing the MRAM elements to be formed closer to increase the areal density of the MRAM device. Increase in magnetic field flux due to the magnetic keeper allows operation of the MRAM device with lowered power. Soft magnetic materials such as nickel iron, nickel iron cobalt, or cobalt iron may be used to form the magnetic keeper.
摘要翻译：一种包括MRAM元件阵列的MRAM器件，其中每个元件具有受来自流过导体的电流的磁场影响的MRAM位，还包括邻近导体形成的磁保持器，以有利地改变磁场。磁保持器通过将磁场集中在保持器内来改变磁场，从而减少了边缘场的存在范围，从而允许MRAM元件更接近地增加MRAM器件的面密度。由于磁力保持器引起的磁场通量的增加允许MRAM器件以较低的功率运行。可以使用诸如镍铁，镍铁钴或钴铁的软磁性材料来形成磁保持器。

3. 发明授权

US07145798B2 Methods for fabricating a magnetic keeper for a memory device 失效
公开(公告)号：US07145798B2
公开(公告)日：2006-12-05
申请号：US11132798
申请日：2005-05-19
申请人： William F. Witcraft , Lonny Berg , Alan Hurst , William Vavra , Mark Jenson
发明人： William F. Witcraft , Lonny Berg , Alan Hurst , William Vavra , Mark Jenson
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： An MRAM device comprising an array of MRAM elements, with each element having an MRAM bit influenced by a magnetic field from a current flowing through a conductor, also includes a magnetic keeper formed adjacent the conductor to advantageously alter the magnetic field. The magnetic keeper alters the magnetic field by concentrating the field within the keeper thereby reducing the extent in which fringe field exists, thus allowing the MRAM elements to be formed closer to increase the areal density of the MRAM device. Increase in magnetic field flux due to the magnetic keeper allows operation of the MRAM device with lowered power. Soft magnetic materials such as nickel iron, nickel iron cobalt, or cobalt iron may be used to form the magnetic keeper.

4. 发明申请

US20070200565A1 Semiconductor Device and Magneto-Resistive Sensor Integration 有权
标题翻译：半导体器件和磁电阻传感器集成
公开(公告)号：US20070200565A1
公开(公告)日：2007-08-30
申请号：US11742335
申请日：2007-04-30
申请人： William Witcraft , Lonny Berg , Mark Amundson
发明人： William Witcraft , Lonny Berg , Mark Amundson
IPC分类号： G01R33/02
CPC分类号： G01R33/096 , G01R33/09
摘要： A magnetic-sensing apparatus and method of making and using thereof is provided. The sensing apparatus may be fabricated from semiconductor circuitry and a magneto-resistive sensor. A dielectric may be disposed between the semiconductor circuitry and the magneto-resistive sensor. In one embodiment, the semiconductor circuitry and magneto-resistive sensor are formed into a single package or, alternatively, monolithically formed into a single chip. In another embodiment, some of the semiconductor circuitry may be monolithically formed on a first chip with the magneto-resistive sensor, while other portions of the semiconductor circuitry may be formed on a second chip. As such, the first and second chips may be placed in close proximity and electrically connected together or alternatively have no intentional electrical interaction. Exemplary semiconductor devices that might be implemented include, without limitation, capacitors, inductors, operational amplifiers, set/reset circuitry for the MR sensors, accelerometers, pressure sensors, position sensing circuitry, compassing circuitry, etc.
摘要翻译：提供了一种磁感测装置及其制造和使用方法。感测装置可以由半导体电路和磁阻传感器制造。电介质可以设置在半导体电路和磁阻传感器之间。在一个实施例中，半导体电路和磁阻传感器形成为单个封装，或者替代地，单片地形成为单个芯片。在另一个实施例中，半导体电路中的一些可以在第一芯片上与磁阻传感器一体地形成，而半导体电路的其它部分可以形成在第二芯片上。因此，第一和第二芯片可以被放置在紧密接近并电连接在一起，或者不具有有意的电相互作用。可能实现的示例性半导体器件包括但不限于电容器，电感器，运算放大器，用于MR传感器的设置/复位电路，加速度计，压力传感器，位置感测电路，罗盘电路等。

5. 发明授权

US07029923B2 Method for manufacture of magneto-resistive bit structure 有权
标题翻译：磁阻位结构的制造方法
公开(公告)号：US07029923B2
公开(公告)日：2006-04-18
申请号：US10734663
申请日：2003-12-11
申请人： Harry Liu , William Larson , Lonny Berg , Theodore Zhu , Shaoping Li , Romney R. Katti , Yong Lu , Anthony Arrott
发明人： Harry Liu , William Larson , Lonny Berg , Theodore Zhu , Shaoping Li , Romney R. Katti , Yong Lu , Anthony Arrott
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , G11C11/15 , H01L43/08
摘要： A magnetic bit structure for a magneto-resistive memory is disclosed that has bit ends that are sufficiently large to accommodate a minimum size contact or via hole. By providing such an arrangement, the magnetic bit structure may be fabricated using conventional contact and/or via processing steps. As such, the cost of manufacturing the device may be reduced, and the overall achievable yield may be increased.
摘要翻译：公开了一种用于磁阻存储器的磁头结构，其具有足够大的位端以适应最小尺寸的接触或通孔。通过提供这种布置，可以使用常规的接触和/或通孔处理步骤来制造磁头结构。因此，可以降低制造装置的成本，并且可以提高总体可实现的产量。

6. 发明授权

US06806546B2 Passivated magneto-resistive bit structure 有权
公开(公告)号：US06806546B2
公开(公告)日：2004-10-19
申请号：US10078234
申请日：2002-02-14
申请人： Harry Liu , Lonny Berg , William L Larson , Shaoping Li , Theodore Zhu , Joel Drewes
发明人： Harry Liu , Lonny Berg , William L Larson , Shaoping Li , Theodore Zhu , Joel Drewes
IPC分类号： H01L4300
CPC分类号： H01L27/222 , B82Y10/00 , G11C11/15 , H01L43/08 , H01L43/12
摘要： A passivated magneto-resistive bit structure is disclosed in which surfaces subjects to oxidation or corrosion are protected. In one embodiment, a bit structure is encapsulated by means of an etch stop barrier material. In another embodiment an etch stop barrier material protects the top of a bit structure and dielectric spacers protect the side walls.

7. 发明申请

US20060277747A1 Methods for fabricating giant magnetoresistive (GMR) devices 失效
标题翻译：制造巨磁阻（GMR）器件的方法
公开(公告)号：US20060277747A1
公开(公告)日：2006-12-14
申请号：US11508671
申请日：2006-08-22
申请人： Daniel Baseman , Lonny Berg , Romney Katti , Daniel Reed , Gordon Shaw , Wei Zou
发明人： Daniel Baseman , Lonny Berg , Romney Katti , Daniel Reed , Gordon Shaw , Wei Zou
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11C11/16 , G11B5/39 , H01L43/12 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49155
摘要： In a method of fabricating a giant magnetoresistive (GMR) device a plurality of magnetoresistive device layers is deposited on a first silicon nitride layer formed on a silicon oxide layer. An etch stop is formed on the magnetoresistive device layers, and a second layer of silicon nitride is formed on the etch stop. The magnetoresistive device layers are patterned to define a plurality of magnetic bits having sidewalls. The second silicon nitride layer is patterned to define electrical contact portions on the etch stop in each magnetic bit. The sidewalls of the magnetic bits are covered with a photoresist layer. A reactive ion etch (RIE) process is used to etch into the first silicon nitride and silicon oxide layers to expose electrical contacts. The photoresist layer and silicon nitride layers protect the magnetoresistive layers from exposure to oxygen during the etching into the silicon oxide layer.
摘要翻译：在制造巨磁阻（GMR）器件的方法中，多个磁阻器件层沉积在形成于氧化硅层上的第一氮化硅层上。在磁阻器件层上形成蚀刻停止层，在蚀刻停止层上形成第二氮化硅层。图案化磁阻器件层以限定具有侧壁的多个磁性位。将第二氮化硅层图案化以限定每个磁头中蚀刻停止点上的电接触部分。磁头的侧壁被光致抗蚀剂层覆盖。使用反应离子蚀刻（RIE）工艺来蚀刻到第一氮化硅和氧化硅层中以暴露电触点。在蚀刻到氧化硅层期间，光致抗蚀剂层和氮化硅层保护磁阻层免受暴露于氧气。

8. 发明授权

US06717194B2 Magneto-resistive bit structure and method of manufacture therefor 有权
标题翻译：磁阻位结构及其制造方法
公开(公告)号：US06717194B2
公开(公告)日：2004-04-06
申请号：US09999684
申请日：2001-10-30
申请人： Harry Liu , William Larson , Lonny Berg , Theodore Zhu , Shaoping Li , Romney R. Katti , Yong Lu , Anthony Arrott
发明人： Harry Liu , William Larson , Lonny Berg , Theodore Zhu , Shaoping Li , Romney R. Katti , Yong Lu , Anthony Arrott
IPC分类号： H01L31119
CPC分类号： H01L43/12 , G11C11/15 , H01L43/08
摘要： A magnetic bit structure for a magneto-resistive memory is disclosed that has bit ends that are sufficiently large to accommodate a minimum size contact or via hole. By providing such an arrangement, the magnetic bit structure may be fabricated using conventional contact and/or via processing steps. As such, the cost of manufacturing the device may be reduced, and the overall achievable yield may be increased.
摘要翻译：公开了一种用于磁阻存储器的磁头结构，其具有足够大的位端以适应最小尺寸的接触或通孔。通过提供这种布置，可以使用常规的接触和/或通孔处理步骤来制造磁头结构。因此，可以降低制造装置的成本，并且可以提高总体可实现的产量。

9. 发明授权

US07427514B2 Passivated magneto-resistive bit structure and passivation method therefor 有权
标题翻译：钝化磁阻位结构及其钝化方法
公开(公告)号：US07427514B2
公开(公告)日：2008-09-23
申请号：US10646103
申请日：2003-08-22
申请人： Harry Liu , Lonny Berg , William L. Larson , Shaoping Li , Theodore Zhu , Joel Drewes
发明人： Harry Liu , Lonny Berg , William L. Larson , Shaoping Li , Theodore Zhu , Joel Drewes
IPC分类号： G11C11/00 , H01L41/22 , H01L45/00
CPC分类号： H01L27/222 , B82Y10/00 , G11C11/15 , H01L43/08 , H01L43/12
摘要： A passivated magneto-resistive bit structure is disclosed in which surfaces subjects to oxidation or corrosion are protected. In one embodiment, a bit structure is encapsulated by means of an etch stop barrier material. In another embodiment an etch stop barrier material protects the top of a bit structure and dielectric spacers protect the side walls.
摘要翻译：公开了钝化的磁阻钻头结构，其中受保护的氧化或腐蚀的表面。在一个实施例中，位结构通过蚀刻停止阻挡材料被封装。在另一个实施例中，蚀刻停止阻挡材料保护位结构的顶部并且电介质间隔件保护侧壁。

10. 发明授权

US07183120B2 Etch-stop material for improved manufacture of magnetic devices 有权
标题翻译：蚀刻停止材料，用于改善磁性器件的制造
公开(公告)号：US07183120B2
公开(公告)日：2007-02-27
申请号：US10284922
申请日：2002-10-31
申请人： Lonny Berg , Daniel Baseman , Wei (David) DZ Zou
发明人： Lonny Berg , Daniel Baseman , Wei (David) DZ Zou
IPC分类号： H01L21/00
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , H01F10/324 , H01F41/308 , H01L43/12
摘要： A method for fabricating a magnetoresistive device having at least one active region, which may be formed into a magnetic memory bit, sensor element and/or other device, is provided. In forming the magnetoresistive device, a magnetoresistive stack, such as a giant magnetoresistive stack, is formed over a substrate. In addition, a substantially antireflective cap layer formed from titanium nitride, aluminum nitride, and/or other substantially antireflective material, as opposed to the materials commonly used to form a cap layer, is formed over the magnetoresistive stack. The substantially antireflective cap layer is usable as an etch stop for later processing in forming the magnetic memory bit, sensor element and/or other device.
摘要翻译：提供一种用于制造具有至少一个可以形成为磁记录位，传感器元件和/或其他装置的有源区的磁阻器件的方法。在形成磁阻器件时，在衬底上形成诸如巨磁阻堆叠的磁阻堆叠。此外，与通常用于形成覆盖层的材料相反，由氮化钛，氮化铝和/或其它基本上抗反射材料形成的基本上抗反射的盖层形成在磁阻堆叠上。基本上抗反射盖层可用作蚀刻停止件，用于在形成磁存储器位，传感器元件和/或其它器件时进行后续处理。

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