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1. 发明授权

US06617261B2 Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates 有权
标题翻译：用于从蓝宝石衬底上的沟槽图案化GaN层制造GaN衬底的结构和方法
公开(公告)号：US06617261B2
公开(公告)日：2003-09-09
申请号：US10017599
申请日：2001-12-18
申请人： William S. Wong , David K. Biegelsen , Michael A. Kneissl
发明人： William S. Wong , David K. Biegelsen , Michael A. Kneissl
IPC分类号： H01L2348
CPC分类号： H01L21/6835 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/02664 , H01L2221/68363 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S2304/04 , H01S2304/12
摘要： Gallium nitride substrates are formed by etching a gallium nitride layer on a sapphire substrate or by selective area regrowth of a gallium nitride layer first deposited onto a sapphire substrate. The gallium nitride layers are bonded to a support substrate and a laser pulse directed through the transparent sapphire detaches the gallium nitride layers from the sapphire substrate. The gallium nitride layers are then detached from the support substrate forming freestanding gallium nitride substrates.
摘要翻译：通过蚀刻蓝宝石衬底上的氮化镓层或者首先沉积在蓝宝石衬底上的氮化镓层的选择性区域再生长来形成氮化镓衬底。将氮化镓层接合到支撑基板上，并且穿过透明蓝宝石的激光脉冲从蓝宝石衬底分离氮化镓层。然后从形成独立的氮化镓衬底的支撑衬底上分离出氮化镓层。

2. 发明授权

US07031365B2 Locally-outcoupled cavity resonator having unidirectional emission 失效
标题翻译：具有单向发射的本地耦合腔谐振器
公开(公告)号：US07031365B2
公开(公告)日：2006-04-18
申请号：US10428068
申请日：2003-05-02
申请人： Michael A. Kneissl , Noble M. Johnson , David K. Biegelsen , Richard K. Chang , A. Douglas Stone , Grace D. Chern , Hakan E. Tureci , Joseph Zyss
发明人： Michael A. Kneissl , Noble M. Johnson , David K. Biegelsen , Richard K. Chang , A. Douglas Stone , Grace D. Chern , Hakan E. Tureci , Joseph Zyss
IPC分类号： H01S3/083
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0425 , H01S5/1075 , H01S5/1082 , H01S5/18 , H01S5/40
摘要： A locally-outcoupled optical resonator has whispering gallery modes existing in a nearly circular resonator. Light is outcoupled by providing a local perturbing feature on the perimeter of the locally-outcoupled cavity resonator. The perturbing feature provides an outcoupling or loss mechanism that asymmetrically interacts with circulating whispering gallery modes, thereby making the resonator capable of uni-directional output.
摘要翻译：本地耦合的光学谐振器具有存在于近圆形谐振器中的耳语画廊模式。通过在局部输出耦合腔谐振器的周边提供局部扰动特征来将光输出耦合。扰动特征提供了一种与循环语音库模式不对称地相互作用的输出耦合或丢失机制，从而使谐振器能够单向输出。

3. 发明授权

US07242705B2 Grating-outcoupled cavity resonator having uni-directional emission 有权
标题翻译：具有单向发射的光栅耦合谐振腔
公开(公告)号：US07242705B2
公开(公告)日：2007-07-10
申请号：US10736602
申请日：2003-12-17
申请人： Michael A. Kneissl , Noble M. Johnson , David K. Biegelsen
发明人： Michael A. Kneissl , Noble M. Johnson , David K. Biegelsen
IPC分类号： H01S3/07 , H01S5/00
CPC分类号： H01S5/1075 , B82Y20/00 , H01S5/0213 , H01S5/1042 , H01S5/1231 , H01S5/187 , H01S5/34333
摘要： A grating-outcoupled microcavity disk resonator has whispering gallery modes existing in a nearly circular resonator. Light is outcoupled by providing a grating region in the plane of the grating-outcoupled microcavity disk resonator. The grating region provides an outcoupling or loss mechanism that symmetrically interacts with the clockwise and counterclockwise whispering gallery modes, thereby making the resonator capable of surface emission.
摘要翻译：光栅耦合的微腔光盘谐振器具有存在于近圆形谐振器中的耳语画廊模式。通过在光栅输出耦合的微腔盘谐振器的平面中提供光栅区域来将光输出耦合。光栅区域提供与顺时针和逆时针耳语画廊模式对称地相互作用的输出耦合或损失机制，从而使谐振器能够进行表面发射。

4. 发明授权

US07310358B2 Semiconductor lasers 有权
标题翻译：半导体激光器
公开(公告)号：US07310358B2
公开(公告)日：2007-12-18
申请号：US11015990
申请日：2004-12-17
申请人： Christopher L. Chua , Michael A. Kneissl , Patrick Y. Maeda , Noble M. Johnson , Ross D. Bringans , John E. Northrup , David K. Biegelsen
发明人： Christopher L. Chua , Michael A. Kneissl , Patrick Y. Maeda , Noble M. Johnson , Ross D. Bringans , John E. Northrup , David K. Biegelsen
IPC分类号： H01S3/10 , H01S5/00 , H01S3/14
CPC分类号： H01S5/0425 , H01S5/4031 , H01S5/4087
摘要： Lasers, such as in laser structures, can include two or more semiconductor structures that are substantially identical or that include the same semiconductor material and have substantially the same geometry, such as in closely spaced dual-spot two-beam or quad-spot four-beam lasers. The lasers can also include differently structured current flow or contact structures or different wavelength control structures. For example, current flow or contact structures can be differently structured to prevent or otherwise affect phase locking, such as by causing different threshold currents and different operating temperatures. Exemplary differences include that one laser's semiconductor structure can have an isolated area that does not receive electrical current from a covering conductive layer; conductive layers of two layers can have different thicknesses or lengths; one laser can have a patterned layer with high electrical resistance between its semiconductor structure and a conductive layer; or one laser's semiconductor structure can include regions of high electrical resistance adjacent its contact structure.
摘要翻译：诸如激光结构的激光器可以包括两个或更多个半导体结构，其基本相同或包括相同的半导体材料并具有基本上相同的几何形状，例如紧密间隔的双点双光束或四点四光束，光束激光器。激光器还可以包括不同结构的电流或接触结构或不同的波长控制结构。例如，电流或接触结构可以被不同地构造以防止或以其他方式影响锁相，例如通过引起不同的阈值电流和不同的工作温度。示例性差异包括一个激光器的半导体结构可以具有不从覆盖导电层接收电流的隔离区域; 两层的导电层可以具有不同的厚度或长度; 一个激光器可以具有在其半导体结构和导电层之间具有高电阻的图案层; 或者一个激光器的半导体结构可以包括邻近其接触结构的高电阻的区域。

5. 发明授权

US08088637B1 Method of manufacturing a semiconductor device including a superlattice strain relief layer 有权
标题翻译：包括超晶格应变消除层的半导体器件的制造方法
公开(公告)号：US08088637B1
公开(公告)日：2012-01-03
申请号：US12435333
申请日：2009-05-04
申请人： William S. Wong , Michael A. Kneissl , Zhihong Yang , Mark Teepe , Cliff Knollenberg
发明人： William S. Wong , Michael A. Kneissl , Zhihong Yang , Mark Teepe , Cliff Knollenberg
IPC分类号： H01L21/00
CPC分类号： H01L29/205 , B82Y20/00 , H01L29/155 , H01L29/2003 , H01L33/04 , H01L33/32 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/34333
摘要： A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.
摘要翻译：在GaN /蓝宝石模板结构上形成GaN / AlN超晶格，其部分作为用于后续层（例如深UV发光二极管）生长的应变消除层。 GaN / AlN超晶格减轻GaN /蓝宝石模板和多量子阱异质结构有源区之间的应变，允许在有源区中使用高Al摩尔分数，从而在深紫外波长中发射。

6. 发明申请

US20090053845A1 Method For Controlling The Structure And Surface Qualities Of A Thin Film And Product Produced Thereby 审中-公开
标题翻译：用于控制薄膜的结构和表面质量的方法以及由此产生的产品
公开(公告)号：US20090053845A1
公开(公告)日：2009-02-26
申请号：US12265379
申请日：2008-11-05
申请人： William S. Wong , Michael A. Kneissl , Mark Teepe
发明人： William S. Wong , Michael A. Kneissl , Mark Teepe
IPC分类号： H01L21/18
CPC分类号： H01L33/0079 , B82Y20/00 , H01L21/30621 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/32341 , H01S5/34333
摘要： A system and method for providing improved surface quality following removal of a substrate and template layers from a semiconductor structure provides an improved surface quality for a layer (such as a quantum well heterostructure active region) prior to bonding a heat sink/conductive substrate to the structure. Following the physical removal of a sapphire substrate, a sacrificial coating such as a spin-coat polymer photoresist is applied to an exposed GaN surface. This sacrificial coating provides a planar surface, generally parallel to the planes of the interfaces of the underlying layers. The sacrificial coating and etching conditions are selected such that the etch rate of the sacrificial coating approximately matches the etch rate of GaN and the underlying layers, so that the physical surface profile during etching approximates the physical surface profile of the sacrificial coating prior to etching. Following etching, a substrate is bonded to the exposed surface which acts as a heat sink and may be conductive providing for backside electrical contact to the active region.
摘要翻译：在从半导体结构去除衬底和模板层之后提供改进的表面质量的系统和方法在将散热器/导电衬底接合到衬底之前为层（例如量子阱异质结构有源区）提供改进的表面质量结构体。在物理去除蓝宝石衬底之后，将诸如旋涂聚合物光致抗蚀剂的牺牲涂层施加到暴露的GaN表面。该牺牲涂层提供了一般平行于下层的界面的平面的平面。选择牺牲涂层和蚀刻条件使得牺牲涂层的蚀刻速率近似与GaN和下面的层的蚀刻速率匹配，使得蚀刻期间的物理表面轮廓近似于蚀刻之前牺牲涂层的物理表面轮廓。在蚀刻之后，衬底被结合到作为散热器的暴露表面，并且可以是导电的，用于与有源区域的背面电接触。

7. 发明授权

US08154009B1 Light emitting structure including high-al content MQWH 有权
标题翻译：发光结构包括高含量的MQWH
公开(公告)号：US08154009B1
公开(公告)日：2012-04-10
申请号：US12435342
申请日：2009-05-04
申请人： William S. Wong , Michael A. Kneissl , Zhihong Yang , Mark Teepe , Cliff Knollenberg
发明人： William S. Wong , Michael A. Kneissl , Zhihong Yang , Mark Teepe , Cliff Knollenberg
IPC分类号： H01L31/00
CPC分类号： H01L29/205 , B82Y20/00 , H01L29/155 , H01L29/2003 , H01L33/04 , H01L33/32 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/34333
摘要： A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.
摘要翻译：在GaN /蓝宝石模板结构上形成GaN / AlN超晶格，其部分作为用于后续层（例如深UV发光二极管）生长的应变消除层。 GaN / AlN超晶格减轻GaN /蓝宝石模板和多量子阱异质结构有源区之间的应变，允许在有源区中使用高Al摩尔分数，从而在深紫外波长中发射。

8. 发明授权

US06627921B2 Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials 有权
公开(公告)号：US06627921B2
公开(公告)日：2003-09-30
申请号：US10320823
申请日：2002-12-16
申请人： William S. Wong , Michael A. Kneissl
发明人： William S. Wong , Michael A. Kneissl
IPC分类号： H01L2715
CPC分类号： H01L21/2007 , H01L33/0079 , H01L2221/6835 , H01L2221/68363 , H01L2224/83894 , H01L2924/01019 , H01L2924/01079 , H01L2924/01327 , H01S5/0213 , H01S5/0215 , H01S5/0217 , H01S5/32341 , Y10S438/977 , H01L2924/00
摘要： A method for placing nitride laser diode arrays on a thermally and electrically conducting substrate is described. The method uses an excimer laser to detach the nitride laser diode from the sapphire growth substrate after an intermediate substrate has been attached to the side opposite the sapphire substrate. A secondary layer is subsequently deposited to act as a transfer support structure and bonding interface. The membrane is released from the intermediate substrate and a thermally conducting substrate is subsequently bonded to the side where the sapphire substrate was removed. Similarly, the secondary layer may be used as the new host substrate given an appropriate thickness is deposited prior to removal of the intermediate substrate.

9. 发明授权

US07087444B2 Method for integration of microelectronic components with microfluidic devices 有权
标题翻译：微电子元件与微流体器件集成的方法
公开(公告)号：US07087444B2
公开(公告)日：2006-08-08
申请号：US10320904
申请日：2002-12-16
申请人： William S. Wong , Michael L. Chabinyc , Steven E. Ready , Michael A. Kneissl , Mark R. Teepe
发明人： William S. Wong , Michael L. Chabinyc , Steven E. Ready , Michael A. Kneissl , Mark R. Teepe
IPC分类号： H01L21/00
CPC分类号： B81C1/00492 , B01L3/502707 , B01L2200/12 , B01L2300/0654 , B01L2300/0663 , B81B2201/058 , G01N21/01 , H01L2221/68363
摘要： A method of forming an integrated microelectronic device and a micro channel is provided. The method offers an inexpensive way of integrating devices that are usually incompatible during fabrication, a microchannel and a microelectronic structure such as an electro-optic light source, a detector or a MEMs device into a single integrated structure.
摘要翻译：提供一种形成集成的微电子器件和微通道的方法。该方法提供了将制造期间通常不兼容的器件，微通道和诸如电光源，检测器或MEM器件的微电子结构集成到单个集成结构中的廉价方式。

10. 发明授权

US07547925B2 Superlattice strain relief layer for semiconductor devices 有权
标题翻译：半导体器件的超晶格应变消除层
公开(公告)号：US07547925B2
公开(公告)日：2009-06-16
申请号：US11356769
申请日：2006-02-17
申请人： William S. Wong , Michael A. Kneissl , Zhihong Yang , Mark Teepe , Cliff Knollenberg
发明人： William S. Wong , Michael A. Kneissl , Zhihong Yang , Mark Teepe , Cliff Knollenberg
IPC分类号： H01L27/15
CPC分类号： H01L29/205 , B82Y20/00 , H01L29/155 , H01L29/2003 , H01L33/04 , H01L33/32 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/34333
摘要： A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.
摘要翻译：在GaN /蓝宝石模板结构上形成GaN / AlN超晶格，其部分作为用于后续层（例如深UV发光二极管）生长的应变消除层。 GaN / AlN超晶格减轻GaN /蓝宝石模板和多量子阱异质结构有源区之间的应变，允许在有源区中使用高Al摩尔分数，从而在深紫外波长中发射。

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