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1. 发明授权

US5023164A Highly sensitive dry developable deep UV photoresist 失效
标题翻译：高度敏感的可显影深紫外光致抗蚀剂
公开(公告)号：US5023164A
公开(公告)日：1991-06-11
申请号：US425531
申请日：1989-10-23
申请人： William R. Brunsvold , Philip Chiu , Willard E. Conley, Jr. , Dale M. Crockatt , Melvin W. Montgomery , Wayne M. Moreau
发明人： William R. Brunsvold , Philip Chiu , Willard E. Conley, Jr. , Dale M. Crockatt , Melvin W. Montgomery , Wayne M. Moreau
IPC分类号： C08G8/00 , C08G8/10 , G03F7/039 , G03F7/38 , H01L21/027 , H01L21/30
CPC分类号： G03F7/039
摘要： Highly sensitive, highly absorbing deep ultraviolet and vacuum ultraviolet resists which comprise a novolak resin protected with an acid labile group and a photoinitiator which generates a strong acid upon exposure to deep ultraviolet or vacuum ultraviolet radiation. The exposed resists are reacted with organometallic compounds to form reactive ion etch resistant patterns.

2. 发明授权

US5164278A Speed enhancers for acid sensitized resists 失效
标题翻译：用于酸敏感电阻的速度增强器
公开(公告)号：US5164278A
公开(公告)日：1992-11-17
申请号：US487348
申请日：1990-03-01
申请人： William R. Brunsvold , Christopher J. Knors , Melvin W. Montgomery , Wayne M. Moreau , Kevin M. Welsh
发明人： William R. Brunsvold , Christopher J. Knors , Melvin W. Montgomery , Wayne M. Moreau , Kevin M. Welsh
IPC分类号： G03F7/004 , G03F7/029 , G03F7/039 , H01L21/027 , H01L21/30
CPC分类号： G03F7/039 , Y10S430/115 , Y10S430/119
摘要： Acid sensitized photoresists with enhanced photospeed are provided. The photoresist compositions include a polymer binder and/or a polymerizable compound and an acid sensitive group which enables patterning of the resist composition, and acid generating photoinitiator, and an hydroxy aromatic compound which enhances the speed of the resist composition under imaging radiation.

3. 发明授权

US5272042A Positive photoresist system for near-UV to visible imaging 失效
标题翻译：用于近紫外到可见成像的正性光致抗蚀剂系统
公开(公告)号：US5272042A
公开(公告)日：1993-12-21
申请号：US761183
申请日：1991-09-17
申请人： Robert D. Allen , William R. Brunsvold , Burton J. Carpenter , William D. Hinsberg , Joseph LaTorre , Michael G. McMaster , Melvin W. Montgomery , Wayne M. Moreau , Logan L. Simpson , Robert J. Tweig , Gregory M. Wallraff
发明人： Robert D. Allen , William R. Brunsvold , Burton J. Carpenter , William D. Hinsberg , Joseph LaTorre , Michael G. McMaster , Melvin W. Montgomery , Wayne M. Moreau , Logan L. Simpson , Robert J. Tweig , Gregory M. Wallraff
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , H01L21/30 , G03C1/73
CPC分类号： G03F7/039 , Y10S430/111 , Y10S430/121 , Y10S430/122 , Y10S430/126 , Y10S430/127
摘要： Disclosed is a positive photoresist. The photoresist has as its polymeric component a substantially water and base insoluble, photolabile polymer. The photoresist further includes a photo acid generator that is capable of forming a strong acid. This photo acid generator may be a sulfonate ester derived from a N-hydroxyamide, or a N-hydroxyimide. Finally, the photoresist composition includes an appropriate photosensitizer.
摘要翻译：公开了一种正性光致抗蚀剂。光致抗蚀剂具有基本上水和碱不溶性的光不稳定聚合物作为其聚合物组分。光致抗蚀剂还包括能够形成强酸的光酸产生剂。该光酸产生剂可以是衍生自N-羟基酰胺或N-羟基酰亚胺的磺酸酯。最后，光致抗蚀剂组合物包括适当的光敏剂。

4. 发明授权

US5338818A Silicon containing positive resist for DUV lithography 失效
标题翻译：含有DUV光刻的正性抗蚀剂的硅
公开(公告)号：US5338818A
公开(公告)日：1994-08-16
申请号：US943086
申请日：1992-09-10
申请人： William R. Brunsvold , Premlatha Jagannathan , Steve S. Miura , Melvin W. Montgomery , Harbans S. Sachdev , Ratnam Sooriyakumaran
发明人： William R. Brunsvold , Premlatha Jagannathan , Steve S. Miura , Melvin W. Montgomery , Harbans S. Sachdev , Ratnam Sooriyakumaran
IPC分类号： C08G77/38 , C08G77/04 , C08G77/16 , C08G77/18 , C08L83/04 , C08L83/06 , G03F7/039 , G03F7/075 , C08G77/00
CPC分类号： G03F7/0757 , C08G77/04 , C08G77/16 , C08G77/18
摘要： A method of synthesizing a silicon-containing positive resist for use as a imaging layer in DUV, x-ray, or e-beam lithography is disclosed. The resist contains arylsilsesquioxane polymers with acid sensitive pendant groups as dissolution inhibitors and a photoacid generator.
摘要翻译：公开了一种在DUV，X射线或电子束光刻中合成用作成像层的含硅正性抗蚀剂的方法。抗蚀剂含有具有酸敏性侧基作为溶解抑制剂的芳基倍半硅氧烷聚合物和光酸产生剂。

5. 发明授权

US5362599A Fast diazoquinone positive resists comprising mixed esters of 4-sulfonate and 5-sulfonate compounds 失效
标题翻译：快速重氮醌正抗蚀剂，其包含4-磺酸盐和5-磺酸盐化合物的混合酯
公开(公告)号：US5362599A
公开(公告)日：1994-11-08
申请号：US792115
申请日：1991-11-14
申请人： Christopher J. Knors , Steve S. Miura , Melvin W. Montgomery , Wayne M. Moreau , Randolph J. Smith
发明人： Christopher J. Knors , Steve S. Miura , Melvin W. Montgomery , Wayne M. Moreau , Randolph J. Smith
IPC分类号： G03F7/022 , H01L21/027 , G03F7/023 , G03F7/30
CPC分类号： G03F7/022
摘要： Positive photoresist compositions and methods using the photoresist compositions for making submicron patterns in the production of semiconductor devices are disclosed. The photoresists contain sensitizers that are mixed naphthoquinonediazide 4- and 5- sulfonic acid esters of bis and tris(mono, di and trihydroxyphenyl) alkanes.
摘要翻译：公开了正性光致抗蚀剂组合物和使用光致抗蚀剂组合物在制造半导体器件中制造亚微米图案的方法。光致抗蚀剂含有混合萘醌二叠氮化物双和三（一，二和三羟基苯基）烷烃的4-和5-磺酸酯的敏化剂。

6. 发明授权

US06582861B2 Method of reshaping a patterned organic photoresist surface 失效
公开(公告)号：US06582861B2
公开(公告)日：2003-06-24
申请号：US09811186
申请日：2001-03-16
申请人： Alex Buxbaum , Melvin W. Montgomery
发明人： Alex Buxbaum , Melvin W. Montgomery
IPC分类号： G03F900
CPC分类号： G03F7/40 , G03F7/091
摘要： The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may be used to enable improved control over the dimensions of a semiconductor device fabricated using a patterned photoresist. In particular, a patterned photoresist is treated with an etchant plasma to reshape the surface of the patterned photoresist, where reshaping includes the removal of “t”-topping at the upper surface of the patterned resist, the removal of standing waves present on patterned surfaces, and the removal of feet which may be present at the base of the patterned photoresist, where the photoresist contacts an underlying layer such as an ARC layer. The method is particularly useful for chemically amplified DUV photoresists, where the presence of “t”-topping, standing waves and foot formation is accentuated in the patterned photoresist as developed.

7. 发明授权

US06605394B2 Organic bottom antireflective coating for high performance mask making using optical imaging 有权
公开(公告)号：US06605394B2
公开(公告)日：2003-08-12
申请号：US09848859
申请日：2001-05-03
申请人： Melvin W. Montgomery , Jeffrey A Albelo
发明人： Melvin W. Montgomery , Jeffrey A Albelo
IPC分类号： G03F900
CPC分类号： G03F1/46 , G03F1/76 , G03F7/091
摘要： The disclosure pertains to a method of optically fabricating a photomask using a direct write continuous wave laser, comprising a series of steps including applying an organic antireflection coating over a chrome-containing layer; applying a chemically-amplified DUV photoresist over the organic antireflection coating; and exposing a surface of the DUV photoresist to the direct write continuous wave laser. The direct write continuous wave laser operates at a wavelength of 244 nm or 257 nm. In an alternative embodiment, the organic antireflection coating may be applied over an inorganic antireflection coating which overlies the chrome containing layer.

8. 发明授权

US07244334B2 Apparatus used in reshaping a surface of a photoresist 有权
标题翻译：用于重塑光刻胶表面的装置
公开(公告)号：US07244334B2
公开(公告)日：2007-07-17
申请号：US11183045
申请日：2005-07-15
申请人： Alex Buxbaum , Melvin W. Montgomery
发明人： Alex Buxbaum , Melvin W. Montgomery
IPC分类号： H05H1/00 , G03F1/00
CPC分类号： G03F7/40 , G03F7/091
摘要： The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may be used to enable improved control over the dimensions of a semiconductor device fabricated using a patterned photoresist. In particular, a patterned photoresist is treated with an etchant plasma to reshape the surface of the patterned photoresist, where reshaping includes the removal of “t”-topping at the upper surface of the patterned resist, the removal of standing waves present on patterned surfaces, and the removal of feet which may be present at the base of the patterned photoresist, where the photoresist contacts an underlying layer such as an ARC layer. The method is particularly useful for chemically amplified DUV photoresists, where the presence of “t”-topping, standing waves and foot formation is accentuated in the patterned photoresist as developed.
摘要翻译：本发明涉及一种改进对图案化光致抗蚀剂的尺寸的控制的方法，其使得能够更好地控制使用图案化光致抗蚀剂制造的光掩模或掩模版的临界尺寸。此外，该方法可以用于使得能够改进对使用图案化光致抗蚀剂制造的半导体器件的尺寸的控制。特别地，用蚀刻剂等离子体处理图案化的光致抗蚀剂以重塑形成图案的光致抗蚀剂的表面，其中整形包括去除图案化抗蚀剂的上表面处的“t” - 顶部，去除存在于图案化表面上的驻波以及可能存在于图案化光致抗蚀剂的基底处的脚的移除，其中光致抗蚀剂接触诸如ARC层的下层。该方法对于化学放大的DUV光致抗蚀剂特别有用，其中在显影的图案化光致抗蚀剂中存在“t”顶，驻波和脚形成。

9. 发明授权

US07067227B2 Sensitized chemically amplified photoresist for use in photomask fabrication and semiconductor processing 失效
公开(公告)号：US07067227B2
公开(公告)日：2006-06-27
申请号：US10155523
申请日：2002-05-23
申请人： Melvin W. Montgomery , Christopher Hamaker
发明人： Melvin W. Montgomery , Christopher Hamaker
IPC分类号： G03F7/00
CPC分类号： G03F7/0392
摘要： The disclosure pertains to a photoresist composition and a method of using the photoresist in the fabrication of reticles or features on a semiconductor substrate. The photoresist composition and the method are designed to reduce the variation in critical dimension of features across a surface of a substrate, where the variation in critical dimension is a result of localized resist loading. The photoresist composition is useful when the imaging system is G-line, H-line, or I-line, and the photoresist composition includes a sensitizer which works in combination with a DUV photoresist including a PAC, to sensitize the photoresist to the G-line, H-line and I-line imaging.

10. 发明授权

US06998206B2 Method of increasing the shelf life of a blank photomask substrate 失效
标题翻译：提高空白光掩模基板的保质期的方法
公开(公告)号：US06998206B2
公开(公告)日：2006-02-14
申请号：US10758827
申请日：2004-01-15
申请人： Scott Fuller , Melvin W. Montgomery , Jeffrey A. Albelo , Alex Buxbaum
发明人： Scott Fuller , Melvin W. Montgomery , Jeffrey A. Albelo , Alex Buxbaum
IPC分类号： G03F9/00 , G03F7/00
CPC分类号： G03F7/168 , G03F1/46 , G03F1/50 , G03F1/76 , G03F7/091 , Y10S430/146 , Y10S430/151
摘要： One principal embodiment of the disclosure pertains to a method of optically fabricating a photomask using a direct write continuous wave laser, comprising a series of steps including: applying an organic antireflection coating over a surface of a photomask which includes a chrome-containing layer; applying a chemically-amplified DUV photoresist over the organic antireflection coating; post apply baking the DUV photoresist over a specific temperature range; exposing a surface of the DUV photoresist to the direct write continuous wave laser; and, post exposure baking the imaged DUV photoresist over a specific temperature range. The direct write continuous wave laser preferably operates at a wavelength of 244 nm or 257 nm. In an alternative embodiment, the organic antireflection coating may be applied over an inorganic antireflection coating which overlies the chrome containing layer.
摘要翻译：本公开的一个主要实施例涉及一种使用直写式连续波激光器光学制造光掩模的方法，包括一系列步骤，包括：在包含含铬层的光掩模的表面上施加有机抗反射涂层; 在有机抗反射涂层上施加化学放大的DUV光致抗蚀剂; 在特定温度范围内涂抹DUV光刻胶; 将DUV光致抗蚀剂的表面暴露于直写式连续波激光器; 并且在特定温度范围内曝光烘烤成像的DUV光致抗蚀剂。直写式连续波激光器优选在244nm或257nm的波长下工作。在替代实施例中，有机抗反射涂层可以涂覆在覆盖含铬层的无机抗反射涂层上。

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