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    • 2. 发明授权
    • High frequency power amplifier
    • 高频功率放大器
    • US6157258A
    • 2000-12-05
    • US270506
    • 1999-03-17
    • Gary C. AdishianDaniel J. LincolnRobert Sengillo, Jr.John Cunliffe
    • Gary C. AdishianDaniel J. LincolnRobert Sengillo, Jr.John Cunliffe
    • H03F3/191H03F3/193H03F3/21H03F3/26H03F3/68H03F3/18
    • H03F3/265H03F3/191H03F3/193H03F3/211
    • A power amplifier that provides wide-band, high efficiency, high voltage, HF power amplification over a large dynamic operating range. In one embodiment, the power amplifier includes a driver amplifier, an intermediate power amplifier comprising a coherently combined array of two transistors, and a final power amplifier comprising a coherently combined array of multiple transistors. The two stage driver amplifier drives the intermediate power amplifier, which drives the final power amplifier. Preferably, because of the inherent linearity, dynamic range, and power limiting requirements, the driver amplifier includes two transistor devices that are of the silicon power bipolar type, operating in class A with classic common-emitter circuit configuration. Preferably, the transistors used in the intermediate power amplifier and the final power amplifier are MOSFETS operating in a non-classic DC grounded-drain, RF common source circuit configuration.
    • 功率放大器,可在大型动态工作范围内提供宽带,高效率,高电压,高功率放大。 在一个实施例中,功率放大器包括驱动器放大器,包括两个晶体管的相干组合阵列的中间功率放大器,以及包括多个晶体管的相干组合阵列的最终功率放大器。 两级驱动器放大器驱动中间功率放大器,驱动最终的功率放大器。 优选地,由于固有的线性度,动态范围和功率限制要求,驱动放大器包括具有硅功率双极型的两个晶体管器件,在具有经典共发射极电路配置的A类中工作。 优选地,在中间功率放大器和最终功率放大器中使用的晶体管是以非典型DC接地漏极RF公共源电路配置运行的MOSFET。