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1. 发明授权

US06184151B2 Method for forming cornered images on a substrate and photomask formed thereby 失效
标题翻译：在基板上形成圆角图像的方法和由此形成的光掩模
公开(公告)号：US06184151B2
公开(公告)日：2001-02-06
申请号：US09275541
申请日：1999-03-24
申请人： William J. Adair , Richard A. Ferguson , Mark C. Hakey , Steven J. Holmes , David V. Horak , Robert K. Leidy , William Hsioh-Lien Ma , Ronald M. Martino , Song Peng
发明人： William J. Adair , Richard A. Ferguson , Mark C. Hakey , Steven J. Holmes , David V. Horak , Robert K. Leidy , William Hsioh-Lien Ma , Ronald M. Martino , Song Peng
IPC分类号： H01L21461
CPC分类号： H01L27/10864 , H01L21/0332 , H01L21/0334 , Y10S438/942
摘要： A method for forming square shape images in a lithographic process is disclosed wherein a first plurality of lines running in a first direction is defined in a first, usually sacrificial, layer, and then a second resist is defined wherein the lines run in an intersecting pattern to those of the first layer, thereby creating cornered images wherever the first and second layer intersect and in the open areas between the lines. Methods are proposed for developing the square intersecting areas and the square angle areas defined by the openings. Additionally, a photomask is disclosed in which the length and width of the cornered images are independently patterned using the two-exposure process.
摘要翻译：公开了一种在光刻工艺中形成正方形形状图像的方法，其中沿第一方向延伸的第一多条线被限定在第一，通常是牺牲层中，然后定义第二抗蚀剂，其中线以相交图案到第一层的那些，从而在第一和第二层交叉的任何地方以及在线之间的开放区域中产生拐角图像。提出了用于显影方形交叉区域和由开口限定的方角区域的方法。此外，公开了一种光掩模，其中使用双曝光工艺独立地对角形图像的长度和宽度进行图案化。

2. 发明授权

US5959325A Method for forming cornered images on a substrate and photomask formed thereby 失效
标题翻译：在基板上形成圆角图像的方法和由此形成的光掩模
公开(公告)号：US5959325A
公开(公告)日：1999-09-28
申请号：US917009
申请日：1997-08-21
申请人： William J. Adair , Richard A. Ferguson , Mark C. Hakey , Steven J. Holmes , David V. Horak , Robert K. Leidy , William Hsioh-Lien Ma , Ronald M. Martino , Song Peng
发明人： William J. Adair , Richard A. Ferguson , Mark C. Hakey , Steven J. Holmes , David V. Horak , Robert K. Leidy , William Hsioh-Lien Ma , Ronald M. Martino , Song Peng
IPC分类号： H01L21/033 , H01L21/8242 , H01L27/108
CPC分类号： H01L27/10864 , H01L21/0332 , H01L21/0334 , Y10S438/942
摘要： A method for forming square shape images in a lithographic process is disclosed wherein a first plurality of lines running in a first direction is defined in a first, usually sacrificial, layer, and then a second resist is defined wherein the lines run in an intersecting pattern to those of the first layer, thereby creating cornered images wherever the first and second layer intersect and in the open areas between the lines. Methods are proposed for developing the square intersecting areas and the square angle areas defined by the openings. Additionally, a photomask is disclosed in which the length and width of the cornered images are independently patterned using the two-exposure process.
摘要翻译：公开了一种在光刻工艺中形成正方形形状图像的方法，其中沿第一方向延伸的第一多条线被限定在第一，通常是牺牲层中，然后定义第二抗蚀剂，其中线以相交图案到第一层的那些，从而在第一和第二层交叉的任何地方以及在线之间的开放区域中产生拐角图像。提出了用于显影方形交叉区域和由开口限定的方角区域的方法。此外，公开了一种光掩模，其中使用双曝光工艺独立地对角形图像的长度和宽度进行图案化。

3. 发明授权

US5538833A High resolution phase edge lithography without the need for a trim mask 失效
标题翻译：高分辨率相缘光刻，无需修剪蒙版
公开(公告)号：US5538833A
公开(公告)日：1996-07-23
申请号：US285575
申请日：1994-08-03
申请人： Richard A. Ferguson , Lars W. Liebmann , Ronald M. Martino , Thomas H. Newman
发明人： Richard A. Ferguson , Lars W. Liebmann , Ronald M. Martino , Thomas H. Newman
IPC分类号： G03F1/34 , G03F7/20 , H01L21/027 , G03C5/00
CPC分类号： G03F1/34
摘要： A process of phase edge lithography is employed in the manufacture of very large scale integrated (VLSI) chips in which chrome images are biased on a phase edge of a phase shift mask (PSM) and the mask overexposed to compensate for the positive bias. This overexposure eliminates any residual images from the phase edge mask with minimum impact to the desired images. This simple process results in a trim-less phase edge process that takes advantage of the improved resolution and process latitude of phase edge PSMs while avoiding layout impacts caused by a trim mask or other phase edge elimination methods.
摘要翻译：在制造非常大规模的集成（VLSI）芯片的过程中采用相位光刻技术，其中镀铬图像偏置在相移掩模（PSM）的相位边缘上，并且掩模过度曝光以补偿正偏压。这种过度曝光可以消除来自相边缘掩模的任何残留图像，同时对所需图像的影响最小。这个简单的过程产生了一个无需修剪的相位边缘过程，利用改进的分离和相位边缘PSM的处理纬度，同时避免了由修剪掩模或其他相位边缘消除方法引起的布局影响。

4. 发明授权

US5807649A Lithographic patterning method and mask set therefor with light field trim mask 失效
标题翻译：平版印刷图案方法和用光场修剪掩模设置的掩模
公开(公告)号：US5807649A
公开(公告)日：1998-09-15
申请号：US740598
申请日：1996-10-31
申请人： Lars W. Liebmann , David S. O'Grady , Richard A. Ferguson , William J. Adair
发明人： Lars W. Liebmann , David S. O'Grady , Richard A. Ferguson , William J. Adair
IPC分类号： G03F1/00 , G03F1/26 , G03F7/20 , G03F9/00
CPC分类号： G03F7/70433 , G03F1/26 , G03F1/70 , G03F7/70283
摘要： A lithographic patterning method and mask set using a phase shift trim mask having mask dimensions increased in block size so as to remove previous exposure defects.
摘要翻译：使用具有以块大小增加的掩模尺寸的相移修剪掩模的光刻图案化方法和掩模组，以便去除先前的曝光缺陷。

5. 发明授权

US07147976B2 Binary OPC for assist feature layout optimization 失效
公开(公告)号：US07147976B2
公开(公告)日：2006-12-12
申请号：US11251981
申请日：2005-10-17
申请人： Lars W. Liebmann , Richard A. Ferguson , Allen H. Gabor , Mark A. Lavin
发明人： Lars W. Liebmann , Richard A. Ferguson , Allen H. Gabor , Mark A. Lavin
IPC分类号： G03F9/00 , G06F17/50
CPC分类号： G03F1/36
摘要： A method of forming a photolithographic mask layout with Sub-Resolution Assist Feature (SRAF) elements on a mask for correcting for proximity effects for a pattern imaged comprising the steps of developing a layout of mask features for printing main pattern features. Provide a table of SRAF element data including spacing of main pattern features and SRAF elements, applying SRAF elements to the mask layout as a function of spacing of main pattern features and SRAF elements, legalizing the SRAF elements as a function of style options, and providing a target pattern comprising a modified layout for the mask, identifying problem edge segments of an SRAF element of the target pattern at risk of causing a printing defect, applying a selected bias to the problem edge segments to modify the pattern where there are areas of SRAF element loss, and providing an output of a modified pattern with modified SRAF elements removing the areas of SRAF element loss. The system can provide SRAF elements to the mask layout as a function of spacing of main pattern features and SRAF elements may be based on data from the SRAF table; or the system can applying model based OPC for exposure dose values based on data from the SRAF table.

6. 发明授权

US5932377A Exact transmission balanced alternating phase-shifting mask for photolithography 失效
标题翻译：用于光刻的精确传输平衡交替移相掩模
公开(公告)号：US5932377A
公开(公告)日：1999-08-03
申请号：US28833
申请日：1998-02-24
申请人： Richard A. Ferguson , Lars W. Liebmann , Scott M. Mansfield , David S. O'Grady , Alfred K. Wong
发明人： Richard A. Ferguson , Lars W. Liebmann , Scott M. Mansfield , David S. O'Grady , Alfred K. Wong
IPC分类号： G03F1/30 , G03F9/00
CPC分类号： G03F1/30
摘要： A two-step method for eliminating transmission errors in alternating phase-shifting masks is described. Initially, the design data is selectively biased to provide a coarse reduction in the inherent transmission error between features of different phase, size, shape, and/or location. During fabrication of the mask with the modified data, residual transmission errors are then eliminated via the positioning of the edges of the etched-quartz trenches which define the phase of a given feature to a set location beneath the opaque chrome film. Application of feedback, in which the aerial image of the mask is monitored during the positioning of the etched-quartz edges, provides additional and precise control of the residual transmission error.
摘要翻译：描述了用于消除交替移相掩模中的传输误差的两步法。最初，设计数据被选择性地偏置以提供不同相位，大小，形状和/或位置的特征之间的固有传输误差的粗略减小。在具有修改数据的掩模制造期间，通过将限定给定特征的相位的蚀刻石英沟槽的边缘定位到不透明铬膜下方的设定位置，残留透射误差被消除。在蚀刻石英边缘的定位期间监测掩模的空中图像的反馈的应用提供对残留传输误差的附加且精确的控制。

7. 发明授权

US06578190B2 Process window based optical proximity correction of lithographic images 有权
公开(公告)号：US06578190B2
公开(公告)日：2003-06-10
申请号：US09759013
申请日：2001-01-11
申请人： Richard A. Ferguson , Mark A. Lavin , Lars W. Liebmann , Alfred K. Wong
发明人： Richard A. Ferguson , Mark A. Lavin , Lars W. Liebmann , Alfred K. Wong
IPC分类号： G06F1750
CPC分类号： G03F1/70 , G03F1/36
摘要： A method of creating a pattern for a mask adapted for use in lithographic production of features on a substrate. The method comprises initially providing a mask pattern of a feature to be created on the substrate using the mask. The method then includes establishing target dimensional bounds of the pattern, determining simulated achievable dimensional bounds of the pattern, comparing the target dimensional bounds of the pattern to the simulated achievable dimensional bounds of the pattern, and determining locations where the simulated achievable dimensional bounds of the pattern differ from the target dimensional bounds of the pattern. In its preferred embodiment, the feature is an integrated circuit to be lithographically produced on a semiconductor substrate.

8. 发明授权

US5936738A Focus monitor for alternating phase shifted masks 有权
标题翻译：交替相移掩模的聚焦监视器
公开(公告)号：US5936738A
公开(公告)日：1999-08-10
申请号：US127741
申请日：1998-08-03
申请人： Lars W. Liebmann , Richard A. Ferguson
发明人： Lars W. Liebmann , Richard A. Ferguson
IPC分类号： G01B11/02 , G03F1/26 , G03F7/20 , G01B11/00
CPC分类号： G03F7/70641 , G01B11/026 , G03F7/70283 , G03F1/26
摘要： A focus monitor for establishing best focus of a lithographic system in semiconductor wafers. The focus monitor has a phase region having a first phase and a slot disposed within the phase region having a gap size indicative of a defocus level of the lithographic system.
摘要翻译：用于建立半导体晶片中光刻系统最佳焦点的聚焦监视器。聚焦监视器具有相位区域，该相位区域具有设置在相位区域内的具有指示光刻系统的散焦水平的间隙尺寸的第一相位和狭槽。

9. 发明授权

US07001693B2 Binary OPC for assist feature layout optimization 失效
公开(公告)号：US07001693B2
公开(公告)日：2006-02-21
申请号：US10378575
申请日：2003-02-28
申请人： Lars W. Liebmann , Richard A. Ferguson , Allen H. Gabor , Mark A. Lavin
发明人： Lars W. Liebmann , Richard A. Ferguson , Allen H. Gabor , Mark A. Lavin
IPC分类号： G03F9/00
CPC分类号： G03F1/36
摘要： A method of forming a photolithographic mask layout with Sub-Resolution Assist Feature (SRAF) elements on a mask for correcting for proximity effects for a pattern imaged comprising the steps of developing a layout of mask features for printing main pattern features. Provide a table of SRAF element data including spacing of main pattern features and SRAF elements, applying SRAF elements to the mask layout as a function of spacing of main pattern features and SRAF elements, legalizing the SRAF elements as a function of style options, and providing a target pattern comprising a modified layout for the mask, identifying problem edge segments of an SRAF element of the target pattern at risk of causing a printing defect, applying a selected bias to the problem edge segments to modify the pattern where there are areas of SRAF element loss, and providing an output of a modified pattern with modified SRAF elements removing the areas of SRAF element loss. The system can provide SRAF elements to the mask layout as a function of spacing of main pattern features and SRAF elements may be based on data from the SRAF table; or the system can applying model based OPC for exposure dose values based on data from the SRAF table.

10. 发明授权

US06223139B1 Kernel-based fast aerial image computation for a large scale design of integrated circuit patterns 失效
标题翻译：基于内核的快速空中图像计算，用于大规模集成电路图案设计
公开(公告)号：US06223139B1
公开(公告)日：2001-04-24
申请号：US09153842
申请日：1998-09-15
申请人： Alfred K. Wong , Richard A. Ferguson
发明人： Alfred K. Wong , Richard A. Ferguson
IPC分类号： G06F1750
CPC分类号： G03F7/705
摘要： A method of simulating aerial images of large mask areas obtained during the exposure step of a photo-lithographic process when fabricating a semiconductor integrated circuit silicon wafer is described. The method includes the steps of defining mask patterns to be projected by the exposure system to create images of the mask patterns; determining an appropriate sampling range and sampling interval; generating a characteristic matrix describing the exposure system; inverting the matrix to obtain eigenvalues as well as the eigenvectors (or kernels) representing the decomposition of the exposure system; convolving the mask patterns with these eigenvectors; and weighing the resulting convolution by the eigenvalues to form the aerial images. The method is characterized in that the characteristic matrix is precisely defined by the sampling range and the sampling interval, such that the sampling range is the shortest possible and the sampling interval, the largest possible, without sacrificing accuracy. The method of generating aerial images of patterns having large mask areas provides a speed improvement of several orders of magnitude over conventional approaches.
摘要翻译：描述了在制造半导体集成电路硅晶片时模拟在光刻工艺的曝光步骤期间获得的大掩模区域的空间图像的方法。该方法包括以下步骤：定义要由曝光系统投射的掩模图案以创建掩模图案的图像; 确定适当的采样范围和采样间隔; 生成描述曝光系统的特征矩阵; 反转矩阵以获得特征值以及表示曝光系统分解的特征向量（或内核）; 将掩模图案与这些特征向量进行卷积; 并通过特征值称量所得到的卷积以形成航空图像。该方法的特征在于，特征矩阵由采样范围和采样间隔精确定义，使得采样范围尽可能最短，采样间隔最大，而不会牺牲精度。产生具有大掩模区域的图案的空间图像的方法提供比传统方法几个数量级的速度改进。

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