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1. 发明授权

US06657300B2 Formation of ohmic contacts in III-nitride light emitting devices 有权
标题翻译：在III族氮化物发光器件中形成欧姆接触
公开(公告)号：US06657300B2
公开(公告)日：2003-12-02
申请号：US09755935
申请日：2001-01-05
申请人： Werner K. Goetz , Michael D. Camras , Changhua Chen , Gina L. Christenson , R. Scott Kern , Chihping Kuo , Paul Scott Martin , Daniel A. Steigerwald
发明人： Werner K. Goetz , Michael D. Camras , Changhua Chen , Gina L. Christenson , R. Scott Kern , Chihping Kuo , Paul Scott Martin , Daniel A. Steigerwald
IPC分类号： H01L2348
CPC分类号： H01L33/40 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/0425 , H01S5/32341 , H01L2924/00
摘要： P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 &OHgr;cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.
摘要翻译： GaN基发光器件的P型层优化用于形成与金属的欧姆接触。在第一实施例中，在p型导电层和金属触点之间形成电阻率大于或等于约7Ωgm的p型GaN过渡层。在第二实施例中，p型过渡层是任何III-V半导体。在第三实施例中，p型过渡层是超晶格。在第四实施例中，形成具有不同组成和不同浓度的掺杂剂的单一p型层。

2. 发明授权

US06914272B2 Formation of Ohmic contacts in III-nitride light emitting devices 有权
标题翻译：在III族氮化物发光器件中形成欧姆接触
公开(公告)号：US06914272B2
公开(公告)日：2005-07-05
申请号：US10721440
申请日：2003-11-24
申请人： Werner K. Goetz , Michael D. Camras , Changhua Chen , Gina L. Christenson , R. Scott Kern , Chihping Kuo , Paul Scott Martin , Daniel A. Steigerwald
发明人： Werner K. Goetz , Michael D. Camras , Changhua Chen , Gina L. Christenson , R. Scott Kern , Chihping Kuo , Paul Scott Martin , Daniel A. Steigerwald
IPC分类号： H01S5/30 , H01L33/32 , H01L33/40 , H01S5/042 , H01S5/323 , H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/0425 , H01S5/32341 , H01L2924/00
摘要： P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 Ωcm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.
摘要翻译： GaN基发光器件的P型层优化用于形成与金属的欧姆接触。在第一实施例中，在p型导电层和金属触点之间形成电阻率大于或等于约7Ωgm的p型GaN过渡层。在第二实施例中，p型过渡层是任何III-V半导体。在第三实施例中，p型过渡层是超晶格。在第四实施例中，形成具有不同组成和不同浓度的掺杂剂的单一p型层。

3. 发明授权

US06635904B2 Indium gallium nitride smoothing structures for III-nitride devices 有权
公开(公告)号：US06635904B2
公开(公告)日：2003-10-21
申请号：US09823823
申请日：2001-03-29
申请人： Werner K. Goetz , Michael D. Camras , Nathan F. Gardner , R. Scott Kern , Andrew Y. Kim , Stephen A. Stockman
发明人： Werner K. Goetz , Michael D. Camras , Nathan F. Gardner , R. Scott Kern , Andrew Y. Kim , Stephen A. Stockman
IPC分类号： H01L3300
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/007 , H01L33/0075 , H01L33/02 , H01L33/06 , H01S5/0212 , H01S5/32341 , H01S5/3409
摘要： A smoothing structure containing indium is formed between the substrate and the active region of a III-nitride light emitting device to improve the surface characteristics of the device layers. In some embodiments, the smoothing structure is a single layer, separated from the active region by a spacer layer which typically does not contain indium. The smoothing layer contains a composition of indium lower than the active region, and is typically deposited at a higher temperature than the active region. The spacer layer is typically deposited while reducing the temperature in the reactor from the smoothing layer deposition temperature to the active region deposition temperature. In other embodiments, a graded smoothing region is used to improve the surface characteristics. The smoothing region may have a graded composition, graded dopant concentration, or both.

4. 发明授权

US06489636B1 Indium gallium nitride smoothing structures for III-nitride devices 有权
公开(公告)号：US06489636B1
公开(公告)日：2002-12-03
申请号：US09823732
申请日：2001-03-29
申请人： Werner K. Goetz , Michael D. Camras , Nathan F. Gardner , R. Scott Kern , Andrew Y. Kim , Stephen A. Stockman
发明人： Werner K. Goetz , Michael D. Camras , Nathan F. Gardner , R. Scott Kern , Andrew Y. Kim , Stephen A. Stockman
IPC分类号： H01L3300
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/007 , H01L33/0075 , H01L33/02 , H01L33/06 , H01S5/0212 , H01S5/32341 , H01S5/3409
摘要： A smoothing structure containing indium is formed between the substrate and the active region of a III-nitride light emitting device to improve the surface characteristics of the device layers. In some embodiments, the smoothing structure is a single layer, separated from the active region by a spacer layer which typically does not contain indium. The smoothing layer contains a composition of indium lower than the active region, and is typically deposited at a higher temperature than the active region. The spacer layer is typically deposited while reducing the temperature in the reactor from the smoothing layer deposition temperature to the active region deposition temperature. In other embodiments, a graded smoothing region is used to improve the surface characteristics. The smoothing region may have a graded composition, graded dopant concentration, or both.

5. 发明授权

US06576932B2 Increasing the brightness of III-nitride light emitting devices 有权
公开(公告)号：US06576932B2
公开(公告)日：2003-06-10
申请号：US09797770
申请日：2001-03-01
申请人： Reena Khare , Werner K. Goetz , Michael D. Camras
发明人： Reena Khare , Werner K. Goetz , Michael D. Camras
IPC分类号： H01L3300
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L33/007 , H01L33/16
摘要： LEDs employing a III-Nitride light emitting active region deposited on a base layer above a substrate show improved optical properties with the base layer grown on an intentionally misaligned substrate with a thickness greater than 3.5 &mgr;m. Improved brightness, improved quantum efficiency, and a reduction in the current at which maximum quantum efficiency occurs are among the improved optical properties resulting from use of a misaligned substrate and a thick base layer. Illustrative examples are given of misalignment angles in the range from 0.05° to 0.50°, and base layers in the range from 6.5 to 9.5 &mgr;m although larger values of both misalignment angle and base layer thickness can be used. In some cases, the use of thicker base layers provides sufficient structural support to allow the substrate to be removed from the device entirely.

6. 发明授权

US06784463B2 III-Phospide and III-Arsenide flip chip light-emitting devices 有权
标题翻译： III型磷化物和III型砷化物倒装芯片发光器件
公开(公告)号：US06784463B2
公开(公告)日：2004-08-31
申请号：US10095552
申请日：2002-03-11
申请人： Michael D. Camras , Daniel A. Steigerwald , Frank M. Steranka , Michael J. Ludowise , Paul S. Martin , Michael R. Krames , Fred A. Kish , Stephen A. Stockman
发明人： Michael D. Camras , Daniel A. Steigerwald , Frank M. Steranka , Michael J. Ludowise , Paul S. Martin , Michael R. Krames , Fred A. Kish , Stephen A. Stockman
IPC分类号： H01L3300
CPC分类号： H01L33/20 , H01L33/02 , H01L33/08 , H01L33/14 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2224/05611 , H01L2924/00014 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05684
摘要： A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example.
摘要翻译：发光半导体器件包括包括有源区的层叠层。有源区包括选自III-磷化物，III-砷化物及其合金的半导体。对于由有源区域发射的光基本透明的覆盖层设置在堆叠的第一侧上。电耦合以在有源区域施加电压的第一和第二电触点设置在与第一侧相对的堆叠的第二侧上。在一些实施例中，由有源区域发射的较大部分的光通过第一侧离开堆叠而不是通过第二侧。因此，例如，发光半导体器件可以有利地作为倒装芯片安装到基座。

7. 发明授权

US06946309B2 III-Phosphide and III-Arsenide flip chip light-emitting devices 有权
标题翻译： III型磷化物和III型砷化物倒装芯片发光器件
公开(公告)号：US06946309B2
公开(公告)日：2005-09-20
申请号：US10867936
申请日：2004-06-14
申请人： Michael D. Camras , Daniel A. Steigerwald , Frank M. Steranka , Michael J. Ludowise , Paul S. Martin , Michael R. Krames , Fred A. Kish , Stephen A. Stockman
发明人： Michael D. Camras , Daniel A. Steigerwald , Frank M. Steranka , Michael J. Ludowise , Paul S. Martin , Michael R. Krames , Fred A. Kish , Stephen A. Stockman
IPC分类号： H01L33/02 , H01L33/08 , H01L33/14 , H01L33/20 , H01L21/00
CPC分类号： H01L33/20 , H01L33/02 , H01L33/08 , H01L33/14 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2224/05611 , H01L2924/00014 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05684
摘要： A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example.
摘要翻译：发光半导体器件包括包括有源区的层叠层。有源区包括选自III-磷化物，III-砷化物及其合金的半导体。对于由有源区域发射的光基本透明的覆盖层设置在堆叠的第一侧上。电耦合以在有源区域施加电压的第一和第二电触点设置在与第一侧相对的堆叠的第二侧上。在一些实施例中，由有源区域发射的较大部分的光通过第一侧离开堆叠而不是通过第二侧。因此，例如，发光半导体器件可以有利地作为倒装芯片安装到基座。

8. 发明授权

US08628985B2 Light emitting devices with improved light extraction efficiency 有权
标题翻译：具有提高光提取效率的发光器件
公开(公告)号：US08628985B2
公开(公告)日：2014-01-14
申请号：US13252398
申请日：2011-10-04
申请人： Michael D. Camras , Michael R. Krames , Wayne L. Snyder , Frank M. Steranka , Robert C. Taber , John J. Uebbing , Douglas W. Pocius , Troy A. Trottier , Christopher H. Lowery , Gerd O. Mueller , Regina B. Mueller-Mach
发明人： Michael D. Camras , Michael R. Krames , Wayne L. Snyder , Frank M. Steranka , Robert C. Taber , John J. Uebbing , Douglas W. Pocius , Troy A. Trottier , Christopher H. Lowery , Gerd O. Mueller , Regina B. Mueller-Mach
IPC分类号： H01L21/00
CPC分类号： H01L33/58 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/502 , H01L33/62
摘要： Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent lens having a refractive index for light emitted by the active region preferably greater than about 1.5, more preferably greater than about 1.8. A method of bonding a transparent lens to a light emitting device having a stack of layers including semiconductor layers comprising an active region includes elevating a temperature of the lens and the stack and applying a pressure to press the lens and the stack together. Bonding a high refractive index lens to a light emitting device improves the light extraction efficiency of the light emitting device by reducing loss due to total internal reflection. Advantageously, this improvement can be achieved without the use of an encapsulant.
摘要翻译：提供了具有提高光提取效率的发光器件。发光器件具有包括有源区的半导体层的一叠层。叠层结合到具有由有源区发射的光的折射率的透明透镜，优选大于约1.5，更优选大于约1.8。将透明透镜粘合到具有包括有源区的半导体层的层叠的发光器件的方法包括提高透镜和叠层的温度并施加压力以将透镜和叠层压在一起。将高折射率透镜粘合到发光器件通过减少由于全内反射引起的损耗来提高发光器件的光提取效率。有利地，可以在不使用密封剂的情况下实现这种改进。

9. 发明授权

US07009213B2 Light emitting devices with improved light extraction efficiency 有权
标题翻译：具有提高光提取效率的发光器件
公开(公告)号：US07009213B2
公开(公告)日：2006-03-07
申请号：US10633054
申请日：2003-07-31
申请人： Michael D. Camras , Gerard Harbers , William R. Imler , Matthijs H. Keuper , Paul S. Martin , Douglas W. Pocius , Frank M. Steranka , Helena Ticha , Ladislav Tichy , R. Scott West
发明人： Michael D. Camras , Gerard Harbers , William R. Imler , Matthijs H. Keuper , Paul S. Martin , Douglas W. Pocius , Frank M. Steranka , Helena Ticha , Ladislav Tichy , R. Scott West
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , H01L33/44 , H01L33/505 , H01L33/60 , H01L2924/0002 , H01L2924/00
摘要： A device includes a light emitting semiconductor device bonded to an optical element. In some embodiments, the optical element may be elongated or shaped to direct a portion of light emitted by the active region in a direction substantially perpendicular to a central axis of the semiconductor light emitting device and the optical element. In some embodiments, the semiconductor light emitting device and optical element are positioned in a reflector or adjacent to a light guide. The optical element may be bonded to the first semiconductor light emitting device by a bond at an interface disposed between the optical element and the semiconductor light emitting device. In some embodiments, the bond is substantially free of organic-based adhesives.
摘要翻译：一种器件包括结合到光学元件的发光半导体器件。在一些实施例中，光学元件可以是细长的或成形的，以在与半导体发光器件和光学元件的中心轴线基本垂直的方向上引导由有源区域发射的光的一部分。在一些实施例中，半导体发光器件和光学元件被定位在反射器中或与光导相邻。光学元件可以通过在设置在光学元件和半导体发光器件之间的界面处的结合键合到第一半导体发光器件。在一些实施方案中，该键基本上不含有机基粘合剂。

10. 发明授权

US5115286A Electro-optical device with inverted transparent substrate and method for making same 失效
标题翻译：带反转透明基板的电光装置及其制造方法
公开(公告)号：US5115286A
公开(公告)日：1992-05-19
申请号：US663056
申请日：1991-02-27
申请人： Michael D. Camras , Louis W. Cook , Virginia M. Robbins
发明人： Michael D. Camras , Louis W. Cook , Virginia M. Robbins
IPC分类号： H01L33/00
CPC分类号： H01L33/0025 , H01L33/0062
摘要： An electro-optical device with a transparent substrate is produced by epitaxially first growing the active device layers, followed by growth of the transparent substrate layer on an opaque wafer. The opaque wafer is subsequently removed. The active device layers have dopants with sufficiently low diffusivities that their electronic characteristics are not adversely affected by long exposure to elevated temperature during the growth of the transparent substrate layer. In a liquid phase epitaxy (LPE) method, a repeated temperature cycle technique is used where the temperature is repeatedly raised each time after cooling to provide a large cooling range for growing a sufficiently thick substrate layer or a series of device layers. In between growths and during the temperature heat-up periods, the device is stored within the LPE reactor. When a epitaxial layer is oxidizable, a non-oxidizable cap is temporarily grown on it in between growths and during the temperature heat up periods. The cap is subsequently removed by melting back at an elevated temperature just prior to the growth of a next layer. The technique may also be used for growing a transparent substrate which is lattice mismatched with the active deivce layers.
摘要翻译：通过外延地生长有源器件层，然后在不透明晶片上生长透明衬底层，制造具有透明衬底的电光器件。随后去除不透明晶片。有源器件层具有足够低的扩散性的掺杂剂，使得它们的电子特性在透明衬底层的生长过程中长时间暴露于高温下不会受到不利影响。在液相外延（LPE）方法中，使用重复的温度循环技术，其中每次冷却后温度重复升高，以提供用于生长足够厚的基底层或一系列器件层的大的冷却范围。在生长和温度升温期之间，装置储存在LPE反应器内。当外延层可氧化时，在生长之间和在升温期间暂时在其上生长不可氧化的盖。随后在下一层生长之前在升高的温度下将盖除去。该技术还可用于生长与活性活性层晶格失配的透明衬底。

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