专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06946309B2 III-Phosphide and III-Arsenide flip chip light-emitting devices 有权
标题翻译： III型磷化物和III型砷化物倒装芯片发光器件
公开(公告)号：US06946309B2
公开(公告)日：2005-09-20
申请号：US10867936
申请日：2004-06-14
申请人： Michael D. Camras , Daniel A. Steigerwald , Frank M. Steranka , Michael J. Ludowise , Paul S. Martin , Michael R. Krames , Fred A. Kish , Stephen A. Stockman
发明人： Michael D. Camras , Daniel A. Steigerwald , Frank M. Steranka , Michael J. Ludowise , Paul S. Martin , Michael R. Krames , Fred A. Kish , Stephen A. Stockman
IPC分类号： H01L33/02 , H01L33/08 , H01L33/14 , H01L33/20 , H01L21/00
CPC分类号： H01L33/20 , H01L33/02 , H01L33/08 , H01L33/14 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2224/05611 , H01L2924/00014 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05684
摘要： A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example.
摘要翻译：发光半导体器件包括包括有源区的层叠层。有源区包括选自III-磷化物，III-砷化物及其合金的半导体。对于由有源区域发射的光基本透明的覆盖层设置在堆叠的第一侧上。电耦合以在有源区域施加电压的第一和第二电触点设置在与第一侧相对的堆叠的第二侧上。在一些实施例中，由有源区域发射的较大部分的光通过第一侧离开堆叠而不是通过第二侧。因此，例如，发光半导体器件可以有利地作为倒装芯片安装到基座。

2. 发明授权

US06784463B2 III-Phospide and III-Arsenide flip chip light-emitting devices 有权
标题翻译： III型磷化物和III型砷化物倒装芯片发光器件
公开(公告)号：US06784463B2
公开(公告)日：2004-08-31
申请号：US10095552
申请日：2002-03-11
申请人： Michael D. Camras , Daniel A. Steigerwald , Frank M. Steranka , Michael J. Ludowise , Paul S. Martin , Michael R. Krames , Fred A. Kish , Stephen A. Stockman
发明人： Michael D. Camras , Daniel A. Steigerwald , Frank M. Steranka , Michael J. Ludowise , Paul S. Martin , Michael R. Krames , Fred A. Kish , Stephen A. Stockman
IPC分类号： H01L3300
CPC分类号： H01L33/20 , H01L33/02 , H01L33/08 , H01L33/14 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2224/05611 , H01L2924/00014 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05684
摘要： A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example.
摘要翻译：发光半导体器件包括包括有源区的层叠层。有源区包括选自III-磷化物，III-砷化物及其合金的半导体。对于由有源区域发射的光基本透明的覆盖层设置在堆叠的第一侧上。电耦合以在有源区域施加电压的第一和第二电触点设置在与第一侧相对的堆叠的第二侧上。在一些实施例中，由有源区域发射的较大部分的光通过第一侧离开堆叠而不是通过第二侧。因此，例如，发光半导体器件可以有利地作为倒装芯片安装到基座。

3. 发明授权

US07095061B2 Contacting scheme for large and small area semiconductor light emitting flip chip devices 有权
标题翻译：大面积和小面积半导体发光倒装芯片器件的接触方案
公开(公告)号：US07095061B2
公开(公告)日：2006-08-22
申请号：US10961239
申请日：2004-10-07
申请人： Daniel A. Steigerwald , Jerome C. Bhat , Michael J. Ludowise
发明人： Daniel A. Steigerwald , Jerome C. Bhat , Michael J. Ludowise
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/08 , H01L33/20 , H01L33/486 , H01L2224/48247
摘要： A light emitting device includes a layer of first conductivity type, a layer of second conductivity type, and a light emitting layer disposed between the layer of first conductivity type and the layer of second conductivity type. A via is formed in the layer of second conductivity type, down to the layer of first conductivity type. The vias may be formed by, for example, etching, ion implantation, diffusion, or selective growth of at least one layer of second conductivity type. A first contact electrically contacts the layer of first conductivity type through the via. A second contact electrically contacts the layer of second conductivity type. A ring that surrounds the light emitting layer and is electrically connected to the first contact electrically contacts the layer of first conductivity type.
摘要翻译：发光器件包括第一导电类型的层，第二导电类型的层和设置在第一导电类型层和第二导电类型层之间的发光层。通孔形成在第二导电类型的层中，直到第一导电类型的层。通孔可以通过例如至少一层第二导电类型的蚀刻，离子注入，扩散或选择性生长来形成。第一接触件通过通孔电接触第一导电类型的层。第二接触件电接触第二导电类型的层。围绕发光层并与第一接触电连接的环电接触第一导电类型的层。

4. 发明授权

US06903376B2 Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction 有权
标题翻译：在用于改进光提取的倒装芯片发光二极管中选择性地放置量子阱
公开(公告)号：US06903376B2
公开(公告)日：2005-06-07
申请号：US10158360
申请日：2002-05-29
申请人： Yu-Chen Shen , Michael R. Krames , Michael J. Ludowise
发明人： Yu-Chen Shen , Michael R. Krames , Michael J. Ludowise
IPC分类号： H01L27/15 , H01L33/02 , H01L33/08 , H01L33/38 , H01L33/40 , H01L33/52 , H01L33/56 , H01L33/62 , H01L33/64 , H01L29/267
CPC分类号： H01L33/405 , G09G2360/148 , H01L27/156 , H01L33/025 , H01L33/08 , H01L33/20 , H01L33/38 , H01L33/52 , H01L33/56 , H01L33/62 , H01L33/641 , H01L33/647 , H01L2224/05001 , H01L2224/05023 , H01L2224/051 , H01L2224/05572 , H01L2224/056 , H01L2224/16 , H01L2924/01019 , H01L2924/01025 , H01L2924/01046 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/12041 , H01L2924/00014
摘要： In accordance with embodiments of the invention, a light emitting device includes a light emitting region and a reflective contact separated from the light emitting region by one or more layers. In a first embodiment, the separation between the light emitting region and the reflective contact is between about 0.5λn and about 0.9λn, where λn is the wavelength of radiation emitted from the light emitting region in an area of the device separating the light emitting region and the reflective contact. In a second embodiment, the separation between the light emitting region and the reflective contact is between about λn and about 1.4λn. The light emitting region may be, for example, III-nitride, III-phosphide, or any other suitable material.
摘要翻译：根据本发明的实施例，发光器件包括发光区域和从发光区域分离一层或多层的反射接触。在第一实施例中，发光区域和反射接触件之间的间隔在约0.5λ至约0.9λ之间，其中λ< SUB>是在分离发光区域和反射接触的器件的区域中从发光区域发射的辐射的波长。在第二实施例中，发光区域和反射接触件之间的间隔在约λλ至约1.4λ之间。发光区域可以是例如III族氮化物，III-磷化物或任何其它合适的材料。

5. 发明授权

US06946685B1 Light emitting semiconductor method and device 有权
标题翻译：发光半导体方法及器件
公开(公告)号：US06946685B1
公开(公告)日：2005-09-20
申请号：US09652194
申请日：2000-08-31
申请人： Daniel A. Steigerwald , Michael J. Ludowise , Steven A. Maranowski , Serge L. Rudaz , Jerome C. Bhat
发明人： Daniel A. Steigerwald , Michael J. Ludowise , Steven A. Maranowski , Serge L. Rudaz , Jerome C. Bhat
IPC分类号： H01L29/22 , H01L33/32 , H01L33/40
CPC分类号： H01L33/405 , H01L33/32
摘要： Silver electrode metallization in light emitting devices is subject to electrochemical migration in the presence of moisture and an electric field. Electrochemical migration of the silver metallization to the pn junction of the device results in an alternate shunt path across the junction, which degrades efficiency of the device. In accordance with a form of this invention, a migration barrier is provided for preventing migration of metal from at least one of the electrodes onto the surface of the semiconductor layer with which the electrode is in contact.
摘要翻译：发光器件中的银电极金属化在水分和电场的存在下经历电化学迁移。银金属化物到器件的pn结的电化学迁移导致跨接头的交替分流路径，这降低了器件的效率。根据本发明的形式，提供了一种迁移屏障，用于防止金属从至少一个电极移动到与电极接触的半导体层的表面上。

6. 发明授权

US06828596B2 Contacting scheme for large and small area semiconductor light emitting flip chip devices 有权
标题翻译：大面积和小面积半导体发光倒装芯片器件的接触方案
公开(公告)号：US06828596B2
公开(公告)日：2004-12-07
申请号：US10172311
申请日：2002-06-13
申请人： Daniel A. Steigerwald , Jerome C. Bhat , Michael J. Ludowise
发明人： Daniel A. Steigerwald , Jerome C. Bhat , Michael J. Ludowise
IPC分类号： H01L3300
CPC分类号： H01L33/382 , H01L33/08 , H01L33/20 , H01L33/486 , H01L2224/48247
摘要： In accordance with the invention, a light emitting device includes a substrate, a layer of first conductivity type overlying the substrate, a light emitting layer overlying the layer of first conductivity type, and a layer of second conductivity type overlying the light emitting layer. A plurality of vias are formed in the layer of second conductivity type, down to the layer of first conductivity type. The vias may be formed by, for example, etching, ion implantation, or selective growth of the layer of second conductivity type. A set of first contacts electrically contacts the layer of first conductivity type through the vias. A second contact electrically contacts the layer of second conductivity type. In some embodiments, the area of the second contact is at least 75% of the area of the device. In some embodiments, the vias are between 2 and 100 microns wide and spaced between 5 and 1000 microns apart.
摘要翻译：根据本发明，发光器件包括衬底，覆盖衬底的第一导电类型的层，覆盖第一导电类型的层的发光层和覆盖发光层的第二导电类型的层。在第二导电类型的层中形成多个通孔，直到第一导电类型的层。通孔可以通过例如第二导电类型的蚀刻，离子注入或选择性生长来形成。一组第一触点通过通孔与第一导电类型的层电接触。第二接触件电接触第二导电类型的层。在一些实施例中，第二触点的面积为器件面积的至少75％。在一些实施例中，通孔的宽度为2至100微米，间隔5至1000微米。

7. 发明授权

US07652304B2 Contacting scheme for large and small area semiconductor light emitting flip chip devices 有权
标题翻译：大面积和小面积半导体发光倒装芯片器件的接触方案
公开(公告)号：US07652304B2
公开(公告)日：2010-01-26
申请号：US11464794
申请日：2006-08-15
申请人： Daniel A. Steigerwald , Jerome C. Bhat , Michael J. Ludowise
发明人： Daniel A. Steigerwald , Jerome C. Bhat , Michael J. Ludowise
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/08 , H01L33/20 , H01L33/486 , H01L2224/48247
摘要： A light emitting device includes a layer of first conductivity type, a layer of second conductivity type, and a light emitting layer disposed between the layer of first conductivity type and the layer of second conductivity type. A via is formed in the layer of second conductivity type, down to the layer of first conductivity type. The vias may be formed by, for example, etching, ion implantation, diffusion, or selective growth of at least one layer of second conductivity type. A first contact electrically contacts the layer of first conductivity type through the via. A second contact electrically contacts the layer of second conductivity type. A ring that surrounds the light emitting layer and is electrically connected to the first contact electrically contacts the layer of first conductivity type.
摘要翻译：发光器件包括第一导电类型的层，第二导电类型的层和设置在第一导电类型层和第二导电类型层之间的发光层。通孔形成在第二导电类型的层中，直到第一导电类型的层。通孔可以通过例如至少一层第二导电类型的蚀刻，离子注入，扩散或选择性生长来形成。第一接触件通过通孔电接触第一导电类型的层。第二接触件电接触第二导电类型的层。围绕发光层并与第一接触电连接的环电接触第一导电类型的层。

8. 发明授权

US06933535B2 Light emitting devices with enhanced luminous efficiency 失效
公开(公告)号：US06933535B2
公开(公告)日：2005-08-23
申请号：US10699433
申请日：2003-10-31
申请人： Daniel A. Steigerwald , William D. Collins III , Robert M. Fletcher , Michael J. Ludowise , Jason L. Posselt
发明人： Daniel A. Steigerwald , William D. Collins III , Robert M. Fletcher , Michael J. Ludowise , Jason L. Posselt
IPC分类号： H01L33/50 , H01L33/00
CPC分类号： H01L33/505 , H01L2224/16
摘要： A structure includes semiconductor light emitting device and a wavelength converting layer. The wavelength converting layer converts a portion of the light emitted from the semiconductor light emitting device. The dominant wavelength of the combined light from the semiconductor light emitting device and the wavelength converting layer is essentially the same as the wavelength of light emitted from the device. The wavelength converting layer may emit light having a spectral luminous efficacy greater than the spectral luminous efficacy of the light emitted from the device. Thus, the structure has a higher luminous efficiency than a device without a wavelength converting layer.

9. 发明授权

US06891197B2 Semiconductor LED flip-chip with dielectric coating on the mesa 有权
标题翻译：半导体LED倒装芯片，介质涂层在台面上
公开(公告)号：US06891197B2
公开(公告)日：2005-05-10
申请号：US10461173
申请日：2003-06-12
申请人： Jerome C. Bhat , Michael J. Ludowise , Daniel A. Steigerwald
发明人： Jerome C. Bhat , Michael J. Ludowise , Daniel A. Steigerwald
IPC分类号： H01L21/314 , H01L21/316 , H01L33/20 , H01L33/32 , H01L33/40 , H01L33/46 , H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： H01L33/46 , H01L33/20 , H01L33/32 , H01L33/405 , H01L2224/14
摘要： A dielectric layer is formed on the mesa wall of a flip-chip LED. The dielectric layer is selected to maximize reflection of light incident at angles ranging from 10 degrees towards the substrate to 30 degrees away from the substrate. In some embodiments, the LED is a III-nitride device with a p-contact containing silver, the dielectric layer adjacent to the mesa wall is a material with a low refractive index compared to GaN, such as Al2O3.
摘要翻译：在倒装芯片LED的台面壁上形成介电层。选择电介质层以使从入射到入射到基底的角度范围为10度的光的反射最大化，从而离开基底。在一些实施例中，LED是具有含有银的p接触的III族氮化物器件，与台面壁相邻的电介质层是与GaN相比具有低折射率的材料，例如Al 2 > O 3 。

10. 发明授权

US06287947B1 Method of forming transparent contacts to a p-type GaN layer 有权
标题翻译：与p型GaN层形成透明接触的方法
公开(公告)号：US06287947B1
公开(公告)日：2001-09-11
申请号：US09327948
申请日：1999-06-08
申请人： Michael J. Ludowise , Steven A. Maranowski , Daniel A. Steigerwald , Jonathan Joseph Wierer, Jr.
发明人： Michael J. Ludowise , Steven A. Maranowski , Daniel A. Steigerwald , Jonathan Joseph Wierer, Jr.
IPC分类号： H01L2128
CPC分类号： H01L33/42 , H01L33/14 , H01L33/32 , H01L33/40 , H01L2933/0016 , H01S5/0421 , H01S5/0425 , H01S5/32341
摘要： A method of forming a light-transmissive contact on a p-type Gallium nitride (GaN) layer of an optoelectronic device includes in one embodiment, introducing a selected metal in an oxidized condition, rather than oxidizing the metal only after it has been deposited on the surface of the p-type GaN layer. In some applications, the oxidized metal provides sufficient lateral conductivity to eliminate the conventional requirement of a second highly conductive contact metal, such as gold. If the second contact metal is desired, an anneal in an oxygen-free environment is performed after deposition of the second layer. The anneal causes the second metal to penetrate the oxidized metal and to fuse to the surface of the p-type GaN layer. In a second embodiment, the oxidation occurs only after at least one of the two metals is deposited on the surface of the p-type GaN layer. In one application of the second embodiment, the two metals are deposited and the oxidation occurs in an environment that includes both water vapor and oxygen gas. In an alternative application of the second embodiment, the first metallic layer is deposited and then oxidized throughout its depth. The second material, such as gold, is evaporated on the first material and a re-anneal step is performed to drive the second metal through the oxidized first metal. In any of the applications of either embodiment, a pattern of windows may be formed in the resulting contact structure or in additional layers that are formed thereon.
摘要翻译：在光电子器件的p型氮化镓（GaN）层上形成透光接触的方法包括在一个实施方案中，将所选择的金属引入氧化条件，而不是仅在其沉积之后氧化金属 p型GaN层的表面。在一些应用中，氧化金属提供足够的横向传导性以消除第二高导电性接触金属（例如金）的常规要求。如果需要第二接触金属，则在沉积第二层之后执行在无氧环境中的退火。退火使第二金属穿透氧化金属并熔合到p型GaN层的表面。在第二实施方案中，仅在两种金属中的至少一种沉积在p型GaN层的表面上之后才发生氧化。在第二实施例的一个应用中，沉积了两种金属，并且在包括水蒸气和氧气的环境中发生氧化。在第二实施例的替代应用中，第一金属层被沉积，然后在整个深度被氧化。第二种材料，例如金，在第一种材料上被蒸发，并且进行再退火步骤以通过氧化的第一金属驱动第二金属。在任一实施例的任何应用中，可以在所得到的接触结构中或在其上形成的附加层中形成窗口图案。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式