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1. 发明申请

US20100170441A1 Method of Forming Metal Oxide and Apparatus for Performing the Same 审中-公开
标题翻译：形成金属氧化物的方法及其执行装置
公开(公告)号：US20100170441A1
公开(公告)日：2010-07-08
申请号：US12729973
申请日：2010-03-23
申请人： Seok-Jun Won , Yong-Min Yoo , Min-Woo Song , Dae-Youn Kim , Young-Hoon Kim , Weon-Hong Kim , Jung-Min Park , Sun-Mi Song
发明人： Seok-Jun Won , Yong-Min Yoo , Min-Woo Song , Dae-Youn Kim , Young-Hoon Kim , Weon-Hong Kim , Jung-Min Park , Sun-Mi Song
IPC分类号： H01L21/46
CPC分类号： C01G25/02 , C01G23/047 , C01G27/02 , C01G35/00 , C01P2006/40
摘要： In a method and an apparatus for forming metal oxide on a substrate, a source gas including metal precursor flows along a surface of the substrate to form a metal precursor layer on the substrate. An oxidizing gas including ozone flows along a surface of the metal precursor layer to oxidize the metal precursor layer so that the metal oxide is formed on the substrate. A radio frequency power is applied to the oxidizing gas flowing along the surface of the metal precursor layer to accelerate a reaction between the metal precursor layer and the oxidizing gas. Acceleration of the oxidation reaction may improve electrical characteristics and uniformity of the metal oxide.
摘要翻译：在基板上形成金属氧化物的方法和装置中，包括金属前体的源气体沿着基板的表面流动，以在基板上形成金属前体层。包括臭氧的氧化气体沿着金属前体层的表面流动，以氧化金属前体层，从而在基板上形成金属氧化物。对沿着金属前体层的表面流动的氧化气体施加射频功率，以加速金属前体层与氧化气体的反应。氧化反应的加速可以改善金属氧化物的电特性和均匀性。

2. 发明授权

US08809999B2 Semiconductor integrated circuit device and method of fabricating the same 有权
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US08809999B2
公开(公告)日：2014-08-19
申请号：US12704339
申请日：2010-02-11
申请人： Weon-Hong Kim , Min-Woo Song , Jung-Min Park
发明人： Weon-Hong Kim , Min-Woo Song , Jung-Min Park
IPC分类号： H01L29/72
CPC分类号： H01L28/40 , H01L28/56 , H01L28/65
摘要： A semiconductor integrated circuit device includes a lower electrode formed on a substrate, a first dielectric layer formed of a metal nitride layer, a metal oxynitride layer, or a combination thereof, on the lower electrode, a second dielectric layer formed on the first dielectric layer that includes a zirconium oxide layer, and an upper electrode formed on the second dielectric layer.
摘要翻译：一种半导体集成电路器件，包括在下电极上形成的下电极，由金属氮化物层形成的第一电介质层，金属氮氧化物层或其组合，形成在第一介电层上的第二电介质层其包括氧化锆层和形成在第二介电层上的上电极。

3. 发明申请

US20090246949A1 Methods of manufacturing semiconductor devices 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090246949A1
公开(公告)日：2009-10-01
申请号：US12383810
申请日：2009-03-27
申请人： Weon-Hong Kim , Min-Woo Song , Pan-Kwi Park , Jung-Min Park
发明人： Weon-Hong Kim , Min-Woo Song , Pan-Kwi Park , Jung-Min Park
IPC分类号： H01L21/28 , H01L21/283
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/10852 , H01L28/75 , H01L28/90
摘要： In a semiconductor device and a method of manufacturing a semiconductor device, a lower electrode is formed on a semiconductor substrate. A first zirconium oxide layer is formed on the lower electrode by performing a first deposition process using a first zirconium source and a first oxidizing gas. A zirconium carbo-oxynitride layer is formed on the first zirconium oxide layer by performing a second deposition process using a second zirconium source, a second oxidizing gas and a nitriding gas, and an upper electrode is formed on the zirconium carbo-oxynitride layer. A zirconium oxide-based composite layer having a high dielectric constant and a thin equivalent oxide thickness can be obtained.
摘要翻译：在半导体器件和半导体器件的制造方法中，在半导体衬底上形成下电极。通过使用第一锆源和第一氧化气体进行第一沉积工艺，在下电极上形成第一氧化锆层。通过使用第二锆源，第二氧化气体和氮化气体进行第二沉积工艺，在第一氧化锆层上形成锆碳氮化钛层，并且在碳氮氧化锆层上形成上电极。可以获得具有高介电常数和薄当量氧化物厚度的氧化锆基复合层。

4. 发明授权

US07491654B2 Method of forming a ZrO2 thin film using plasma enhanced atomic layer deposition and method of fabricating a capacitor of a semiconductor memory device having the thin film 失效
标题翻译：使用等离子体增强原子层沉积法形成ZrO 2薄膜的方法以及制造具有薄膜的半导体存储器件的电容器的方法
公开(公告)号：US07491654B2
公开(公告)日：2009-02-17
申请号：US11485523
申请日：2006-07-13
申请人： Min-Woo Song , Seok-Jun Won , Weon-Hong Kim , Dae-Jin Kwon , Jung-Min Park
发明人： Min-Woo Song , Seok-Jun Won , Weon-Hong Kim , Dae-Jin Kwon , Jung-Min Park
IPC分类号： H01L21/20 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02189 , C23C16/405 , C23C16/45542 , C23C16/45553 , C23C16/515 , H01L21/022 , H01L21/0228 , H01L21/3141 , H01L21/31641 , H01L27/1085 , H01L28/40
摘要： Example embodiments of the present invention relate to a method of forming a dielectric thin film and a method of fabricating a semiconductor memory device having the same. Other example embodiments of the present invention relate to a method of forming a ZrO2 thin film and a method of fabricating a capacitor of a semiconductor memory device using the ZrO2 thin film as a dielectric layer. A method of forming a ZrO2 thin film may include supplying a zirconium precursor on a substrate maintained at a desired temperature, thereby forming a chemisorption layer of the precursor on the substrate. The zirconium precursor may be a tris(N-ethyl-N-methylamino)(tert-butoxy) zirconium precursor. The substrate having the chemisorption layer of the precursor may be exposed to the plasma atmosphere of oxygen-containing gas for a desired time, thereby forming a Zr oxide layer on the substrate, and a method of fabricating a capacitor of a semiconductor memory device having the ZrO2 thin film.
摘要翻译：本发明的示例性实施例涉及一种形成电介质薄膜的方法及其制造具有该电介质薄膜的半导体存储器件的方法。本发明的其他示例性实施例涉及形成ZrO 2薄膜的方法以及使用该ZrO 2薄膜作为电介质层制造半导体存储器件的电容器的方法。形成ZrO 2薄膜的方法可以包括在保持在所需温度的基板上提供锆前体，由此在基板上形成前体的化学吸附层。锆前体可以是三（N-乙基-N-甲基氨基）（叔丁氧基）锆前体。具有前体的化学吸附层的基板可以暴露于含氧气体的等离子体气氛所需的时间，从而在基板上形成Zr氧化物层，以及制造半导体存储器件的电容器的方法，其具有 ZrO2薄膜。

5. 发明申请

US20070264821A1 Methods of forming a semiconductor device 审中-公开
标题翻译：形成半导体器件的方法
公开(公告)号：US20070264821A1
公开(公告)日：2007-11-15
申请号：US11785305
申请日：2007-04-17
申请人： Ju-Youn Kim , Seok-Jun Won , Rak-Hwan Kim , Min-Woo Song , Weon-Hong Kim , Jung-Min Park
发明人： Ju-Youn Kim , Seok-Jun Won , Rak-Hwan Kim , Min-Woo Song , Weon-Hong Kim , Jung-Min Park
IPC分类号： H01L21/44
CPC分类号： H01L21/32051 , H01L28/75
摘要： A method of forming a semiconductor device may include forming a first conductive metal compound layer on a substrate using a metal organic chemical vapor deposition (MOCVD) process and/or forming a second conductive metal compound layer on the first conductive metal compound layer using a physical vapor deposition (PVD) process. The first and second conductive metal compound layers may be formed while reducing or preventing the exposure of the first conductive metal compound layer to oxygen atoms, thus reducing degradation of the first conductive metal compound layer.
摘要翻译：形成半导体器件的方法可以包括：使用金属有机化学气相沉积（MOCVD）工艺在衬底上形成第一导电金属化合物层和/或在第一导电金属化合物层上形成第二导电金属化合物层，使用物理气相沉积（PVD）工艺。可以在减少或防止第一导电金属化合物层暴露于氧原子的同时形成第一和第二导电金属化合物层，从而减少第一导电金属化合物层的劣化。

6. 发明授权

US08471359B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08471359B2
公开(公告)日：2013-06-25
申请号：US12656746
申请日：2010-02-16
申请人： Weon-Hong Kim , Min-Woo Song , Jung-Min Park
发明人： Weon-Hong Kim , Min-Woo Song , Jung-Min Park
IPC分类号： H01L29/93
CPC分类号： H01L28/60 , H01L21/02178 , H01L21/02189 , H01L21/022 , H01L21/02274 , H01L21/0228 , H01L21/3142 , H01L21/31604 , H01L21/31641 , H01L27/10852 , H01L28/40
摘要： A semiconductor device including a substrate; a bottom electrode on the substrate; a first dielectric layer on the bottom electrode, the first dielectric layer including a first metal oxide including at least one of Hf, Al, Zr, La, Ba, Sr, Ti, and Pb; a second dielectric layer on the first dielectric layer, the second dielectric layer including a second metal oxide including at least one of Hf, Al, Zr, La, Ba, Sr, Ti, and Pb, wherein the first metal oxide and the second metal oxide are different materials; a third dielectric layer on the second dielectric layer, the third dielectric layer including a metal carbon oxynitride; and an upper electrode on the third dielectric layer.
摘要翻译：一种包括衬底的半导体器件; 基底上的底电极; 所述第一电介质层包括包含Hf，Al，Zr，La，Ba，Sr，Ti和Pb中的至少一种的第一金属氧化物; 在所述第一电介质层上的第二电介质层，所述第二电介质层包括包含Hf，Al，Zr，La，Ba，Sr，Ti和Pb中的至少一种的第二金属氧化物，其中所述第一金属氧化物和所述第二金属氧化物是不同的材料; 第二电介质层上的第三电介质层，第三电介质层包括金属碳氮氧化物; 以及第三电介质层上的上电极。

7. 发明申请

US20080265371A1 Capacitor Unit and Method of Forming the Same 有权
标题翻译：电容器单元及其形成方法
公开(公告)号：US20080265371A1
公开(公告)日：2008-10-30
申请号：US12106830
申请日：2008-04-21
申请人： Jung-Min Park , Seok-Jun Won , Min-Woo Song , Weon-Hong Kim
发明人： Jung-Min Park , Seok-Jun Won , Min-Woo Song , Weon-Hong Kim
IPC分类号： H01L29/66 , H01L21/20
CPC分类号： H01L28/65 , H01G4/33 , H01G4/38 , Y10S438/957
摘要： A capacitor unit includes a first capacitor and a second capacitor. The first capacitor includes a first lower electrode, a first dielectric layer pattern and a first upper electrode sequentially stacked. The first capacitor includes a first control layer pattern for controlling a voltage coefficient of capacitance (VCC) of the first capacitor between the first lower electrode and the first dielectric layer pattern. The second capacitor includes a second lower electrode, a second dielectric layer pattern and a second upper electrode sequentially stacked. The second lower electrode is electrically connected to the first upper electrode, and the second upper electrode is electrically connected to the second lower electrode. The second capacitor includes a second control layer pattern for controlling a VCC of the second capacitor between the second lower electrode and the second dielectric layer pattern.
摘要翻译：电容器单元包括第一电容器和第二电容器。第一电容器包括第一下电极，第一电介质层图案和顺序层叠的第一上电极。第一电容器包括用于控制第一电容器和第一电介质层图案之间的第一电容器的电容电压（VCC）的电压系数的第一控制层图案。第二电容器包括顺序层叠的第二下电极，第二电介质层图案和第二上电极。第二下部电极与第一上部电极电连接，第二上部电极与第二下部电极电连接。第二电容器包括用于在第二下电极和第二电介质层图案之间控制第二电容器的VCC的第二控制层图案。

8. 发明申请

US20070026688A1 Method of forming a ZrO2 thin film using plasma enhanced atomic layer deposition and method of fabricating a capacitor of a semiconductor memory device having the thin film 失效
标题翻译：使用等离子体增强原子层沉积法形成ZrO 2薄膜的方法以及制造具有薄膜的半导体存储器件的电容器的方法
公开(公告)号：US20070026688A1
公开(公告)日：2007-02-01
申请号：US11485523
申请日：2006-07-13
申请人： Min-Woo Song , Seok-Jun Won , Weon-Hong Kim , Dae-Jin Kwon , Jung-Min Park
发明人： Min-Woo Song , Seok-Jun Won , Weon-Hong Kim , Dae-Jin Kwon , Jung-Min Park
IPC分类号： H01L21/20 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02189 , C23C16/405 , C23C16/45542 , C23C16/45553 , C23C16/515 , H01L21/022 , H01L21/0228 , H01L21/3141 , H01L21/31641 , H01L27/1085 , H01L28/40
摘要： Example embodiments of the present invention relate to a method of forming a dielectric thin film and a method of fabricating a semiconductor memory device having the same. Other example embodiments of the present invention relate to a method of forming a ZrO2 thin film and a method of fabricating a capacitor of a semiconductor memory device using the ZrO2 thin film as a dielectric layer. A method of forming a ZrO2 thin film may include supplying a zirconium precursor on a substrate maintained at a desired temperature, thereby forming a chemisorption layer of the precursor on the substrate. The zirconium precursor may be a tris(N-ethyl-N-methylamino)(tert-butoxy) zirconium precursor. The substrate having the chemisorption layer of the precursor may be exposed to the plasma atmosphere of oxygen-containing gas for a desired time, thereby forming a Zr oxide layer on the substrate, and a method of fabricating a capacitor of a semiconductor memory device having the ZrO2 thin film.
摘要翻译：本发明的示例性实施例涉及一种形成电介质薄膜的方法及其制造具有该电介质薄膜的半导体存储器件的方法。本发明的其它示例性实施例涉及形成ZrO 2薄膜的方法和使用ZrO 2薄膜的半导体存储器件的电容器的制造方法作为电介质层。形成ZrO 2 H 2薄膜的方法可以包括在保持在所需温度的基板上提供锆前体，由此在基板上形成前体的化学吸附层。锆前体可以是三（N-乙基-N-甲基氨基）（叔丁氧基）锆前体。具有前体的化学吸附层的基板可以暴露于含氧气体的等离子体气氛所需的时间，从而在基板上形成Zr氧化物层，以及制造半导体存储器件的电容器的方法，其具有 ZrO 2薄膜。

9. 发明申请

US20100207247A1 Semiconductor Integrated Circuit Device and Method of Fabricating the Same 有权
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US20100207247A1
公开(公告)日：2010-08-19
申请号：US12704339
申请日：2010-02-11
申请人： Weon-Hong Kim , Min-Woo Song , Jung-Min Park
发明人： Weon-Hong Kim , Min-Woo Song , Jung-Min Park
IPC分类号： H01L29/92
CPC分类号： H01L28/40 , H01L28/56 , H01L28/65
摘要： A semiconductor integrated circuit device includes a lower electrode formed on a substrate, a first dielectric layer formed of a metal nitride layer, a metal oxynitride layer, or a combination thereof, on the lower electrode, a second dielectric layer formed on the first dielectric layer that includes a zirconium oxide layer, and an upper electrode formed on the second dielectric layer.
摘要翻译：一种半导体集成电路器件，包括在下电极上形成的下电极，由金属氮化物层形成的第一电介质层，金属氮氧化物层或其组合，形成在第一介电层上的第二电介质层其包括氧化锆层和形成在第二介电层上的上电极。

10. 发明授权

US07708969B2 Method of forming metal oxide 有权
标题翻译：形成金属氧化物的方法
公开(公告)号：US07708969B2
公开(公告)日：2010-05-04
申请号：US11775111
申请日：2007-07-09
申请人： Seok-Jun Won , Yong-Min Yoo , Min-Woo Song , Dae-Youn Kim , Young-Hoon Kim , Weon-Hong Kim , Jung-Min Park , Sun-Mi Song
发明人： Seok-Jun Won , Yong-Min Yoo , Min-Woo Song , Dae-Youn Kim , Young-Hoon Kim , Weon-Hong Kim , Jung-Min Park , Sun-Mi Song
IPC分类号： C01F17/00 , C25D17/00
CPC分类号： C01G25/02 , C01G23/047 , C01G27/02 , C01G35/00 , C01P2006/40
摘要： In a method and an apparatus for forming metal oxide on a substrate, a source gas including metal precursor flows along a surface of the substrate to form a metal precursor layer on the substrate. An oxidizing gas including ozone flows along a surface of the metal precursor layer to oxidize the metal precursor layer so that the metal oxide is formed on the substrate. A radio frequency power is applied to the oxidizing gas flowing along the surface of the metal precursor layer to accelerate a reaction between the metal precursor layer and the oxidizing gas. Acceleration of the oxidation reaction may improve electrical characteristics and uniformity of the metal oxide.
摘要翻译：在基板上形成金属氧化物的方法和装置中，包括金属前体的源气体沿着基板的表面流动，以在基板上形成金属前体层。包括臭氧的氧化气体沿着金属前体层的表面流动，以氧化金属前体层，从而在基板上形成金属氧化物。对沿着金属前体层的表面流动的氧化气体施加射频功率，以加速金属前体层与氧化气体的反应。氧化反应的加速可以改善金属氧化物的电特性和均匀性。

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