专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07491654B2 Method of forming a ZrO2 thin film using plasma enhanced atomic layer deposition and method of fabricating a capacitor of a semiconductor memory device having the thin film 失效
标题翻译：使用等离子体增强原子层沉积法形成ZrO 2薄膜的方法以及制造具有薄膜的半导体存储器件的电容器的方法
公开(公告)号：US07491654B2
公开(公告)日：2009-02-17
申请号：US11485523
申请日：2006-07-13
申请人： Min-Woo Song , Seok-Jun Won , Weon-Hong Kim , Dae-Jin Kwon , Jung-Min Park
发明人： Min-Woo Song , Seok-Jun Won , Weon-Hong Kim , Dae-Jin Kwon , Jung-Min Park
IPC分类号： H01L21/20 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02189 , C23C16/405 , C23C16/45542 , C23C16/45553 , C23C16/515 , H01L21/022 , H01L21/0228 , H01L21/3141 , H01L21/31641 , H01L27/1085 , H01L28/40
摘要： Example embodiments of the present invention relate to a method of forming a dielectric thin film and a method of fabricating a semiconductor memory device having the same. Other example embodiments of the present invention relate to a method of forming a ZrO2 thin film and a method of fabricating a capacitor of a semiconductor memory device using the ZrO2 thin film as a dielectric layer. A method of forming a ZrO2 thin film may include supplying a zirconium precursor on a substrate maintained at a desired temperature, thereby forming a chemisorption layer of the precursor on the substrate. The zirconium precursor may be a tris(N-ethyl-N-methylamino)(tert-butoxy) zirconium precursor. The substrate having the chemisorption layer of the precursor may be exposed to the plasma atmosphere of oxygen-containing gas for a desired time, thereby forming a Zr oxide layer on the substrate, and a method of fabricating a capacitor of a semiconductor memory device having the ZrO2 thin film.
摘要翻译：本发明的示例性实施例涉及一种形成电介质薄膜的方法及其制造具有该电介质薄膜的半导体存储器件的方法。本发明的其他示例性实施例涉及形成ZrO 2薄膜的方法以及使用该ZrO 2薄膜作为电介质层制造半导体存储器件的电容器的方法。形成ZrO 2薄膜的方法可以包括在保持在所需温度的基板上提供锆前体，由此在基板上形成前体的化学吸附层。锆前体可以是三（N-乙基-N-甲基氨基）（叔丁氧基）锆前体。具有前体的化学吸附层的基板可以暴露于含氧气体的等离子体气氛所需的时间，从而在基板上形成Zr氧化物层，以及制造半导体存储器件的电容器的方法，其具有 ZrO2薄膜。

2. 发明授权

US07563672B2 Methods of fabricating integrated circuit devices including metal-insulator-metal capacitors 有权
标题翻译：制造集成电路器件的方法包括金属 - 绝缘体 - 金属电容器
公开(公告)号：US07563672B2
公开(公告)日：2009-07-21
申请号：US11593670
申请日：2006-11-07
申请人： Dae-Jin Kwon , Jung-Min Park , Seok-Jun Won , Min-Woo Song , Weon-hong Kim , Ju-youn Kim
发明人： Dae-Jin Kwon , Jung-Min Park , Seok-Jun Won , Min-Woo Song , Weon-hong Kim , Ju-youn Kim
IPC分类号： H01L21/8242
CPC分类号： H01L27/016 , H01L23/5223 , H01L28/75 , H01L2924/0002 , Y10S438/957 , H01L2924/00
摘要： Integrated circuit devices including metal-insulator-metal (MIM) capacitors are provided. The MIM capacitors may include an upper electrode having first and second layers. The first layer of the upper electrode includes a physical vapor deposition (PVD) upper electrode and the second layer of the upper electrode includes an ionized PVD (IPVD) upper electrode on the PVD upper electrode. Related methods are also provided.
摘要翻译：提供了包括金属 - 绝缘体 - 金属（MIM）电容器的集成电路器件。 MIM电容器可以包括具有第一层和第二层的上电极。上电极的第一层包括物理气相沉积（PVD）上电极，并且上电极的第二层在PVD上电极上包括离子化的PVD（IPVD）上电极。还提供了相关方法。

3. 发明申请

US20070178249A1 METHODS OF FORMING METAL LAYERS USING METAL-ORGANIC CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：使用金属有机化学气相沉积法形成金属层的方法
公开(公告)号：US20070178249A1
公开(公告)日：2007-08-02
申请号：US11623815
申请日：2007-01-17
申请人： Min-Woo Song , Seok-Jun Won , Dae-Jin Kwon , Weon-Hong Kim , Ju-Youn Kim , Jung-Min Park
发明人： Min-Woo Song , Seok-Jun Won , Dae-Jin Kwon , Weon-Hong Kim , Ju-Youn Kim , Jung-Min Park
IPC分类号： H05H1/24
CPC分类号： C23C16/34 , C23C16/56
摘要： Provided is a method of forming a metal layer using metal-organic chemical vapor deposition (MOCVD). The method includes using MOCVD to form on a dielectric layer a metal layer having a first thickness, performing a first plasma process on the metal layer, using the MOCVD process to form a metal layer having a second thickness on the metal layer having the first thickness and performing a second plasma process on the metal layer having the second thickness, wherein the second plasma process has an energy level greater than the energy level of the first plasma process.
摘要翻译：提供了使用金属有机化学气相沉积（MOCVD）形成金属层的方法。该方法包括使用MOCVD在电介质层上形成具有第一厚度的金属层，在金属层上执行第一等离子体处理，使用MOCVD工艺在具有第一厚度的金属层上形成具有第二厚度的金属层以及对具有所述第二厚度的所述金属层执行第二等离子体处理，其中所述第二等离子体工艺具有大于所述第一等离子体工艺的能级的能级。

4. 发明申请

US20070175495A1 Apparatus for Treating Plasma and Method for Cleaning the Same 审中-公开
标题翻译：用于处理等离子体的设备及其清洁方法
公开(公告)号：US20070175495A1
公开(公告)日：2007-08-02
申请号：US11668805
申请日：2007-01-30
申请人： Weon-Hong Kim , Seok-Jun Won , Dae-Jin Kwon , Min-Woo Song , Ju-Youn Kim , Jung-Min Park
发明人： Weon-Hong Kim , Seok-Jun Won , Dae-Jin Kwon , Min-Woo Song , Ju-Youn Kim , Jung-Min Park
IPC分类号： B08B6/00 , C23F1/00 , C23C16/00
CPC分类号： C23C16/4405 , H01J37/32009 , H01J37/32091 , H01J37/32458
摘要： An apparatus for treating plasma includes an inner chamber, an outer chamber receiving the inner chamber and including a gas supplier that supplies a gas into the inner chamber, an inner electrode disposed in the inner chamber, and a plasma generator supplying power independently to the inner electrode and the inner chamber.
摘要翻译：一种用于处理等离子体的设备包括内室，外室，其接收内室，并且包括供应气体供给到内室中的气体供给器，设置在内室中的内电极和等离子发生器独立地向内供应电力电极和内室。

5. 发明申请

US20070111506A1 Integrated circuit devices including metal-insulator-metal capacitors and methods of fabricating the same 有权
标题翻译：包括金属 - 绝缘体 - 金属电容器的集成电路器件及其制造方法
公开(公告)号：US20070111506A1
公开(公告)日：2007-05-17
申请号：US11593670
申请日：2006-11-07
申请人： Dae-Jin Kwon , Jung-Min Park , Seok-Jun Won , Min-Woo Song , Weon-hong Kim , Ju-youn Kim
发明人： Dae-Jin Kwon , Jung-Min Park , Seok-Jun Won , Min-Woo Song , Weon-hong Kim , Ju-youn Kim
IPC分类号： H01L21/4763
CPC分类号： H01L27/016 , H01L23/5223 , H01L28/75 , H01L2924/0002 , Y10S438/957 , H01L2924/00
摘要： Integrated circuit devices including metal-insulator-metal (MIM) capacitors are provided. The MIM capacitors may include an upper electrode having first and second layers. The first layer of the upper electrode includes a physical vapor deposition (PVD) upper electrode and the second layer of the upper electrode includes an ionized PVD (IPVD) upper electrode on the PVD upper electrode. Related methods are also provided.
摘要翻译：提供了包括金属 - 绝缘体 - 金属（MIM）电容器的集成电路器件。 MIM电容器可以包括具有第一层和第二层的上电极。上电极的第一层包括物理气相沉积（PVD）上电极，并且上电极的第二层在PVD上电极上包括离子化的PVD（IPVD）上电极。还提供了相关方法。

6. 发明申请

US20070026688A1 Method of forming a ZrO2 thin film using plasma enhanced atomic layer deposition and method of fabricating a capacitor of a semiconductor memory device having the thin film 失效
标题翻译：使用等离子体增强原子层沉积法形成ZrO 2薄膜的方法以及制造具有薄膜的半导体存储器件的电容器的方法
公开(公告)号：US20070026688A1
公开(公告)日：2007-02-01
申请号：US11485523
申请日：2006-07-13
申请人： Min-Woo Song , Seok-Jun Won , Weon-Hong Kim , Dae-Jin Kwon , Jung-Min Park
发明人： Min-Woo Song , Seok-Jun Won , Weon-Hong Kim , Dae-Jin Kwon , Jung-Min Park
IPC分类号： H01L21/20 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02189 , C23C16/405 , C23C16/45542 , C23C16/45553 , C23C16/515 , H01L21/022 , H01L21/0228 , H01L21/3141 , H01L21/31641 , H01L27/1085 , H01L28/40
摘要： Example embodiments of the present invention relate to a method of forming a dielectric thin film and a method of fabricating a semiconductor memory device having the same. Other example embodiments of the present invention relate to a method of forming a ZrO2 thin film and a method of fabricating a capacitor of a semiconductor memory device using the ZrO2 thin film as a dielectric layer. A method of forming a ZrO2 thin film may include supplying a zirconium precursor on a substrate maintained at a desired temperature, thereby forming a chemisorption layer of the precursor on the substrate. The zirconium precursor may be a tris(N-ethyl-N-methylamino)(tert-butoxy) zirconium precursor. The substrate having the chemisorption layer of the precursor may be exposed to the plasma atmosphere of oxygen-containing gas for a desired time, thereby forming a Zr oxide layer on the substrate, and a method of fabricating a capacitor of a semiconductor memory device having the ZrO2 thin film.
摘要翻译：本发明的示例性实施例涉及一种形成电介质薄膜的方法及其制造具有该电介质薄膜的半导体存储器件的方法。本发明的其它示例性实施例涉及形成ZrO 2薄膜的方法和使用ZrO 2薄膜的半导体存储器件的电容器的制造方法作为电介质层。形成ZrO 2 H 2薄膜的方法可以包括在保持在所需温度的基板上提供锆前体，由此在基板上形成前体的化学吸附层。锆前体可以是三（N-乙基-N-甲基氨基）（叔丁氧基）锆前体。具有前体的化学吸附层的基板可以暴露于含氧气体的等离子体气氛所需的时间，从而在基板上形成Zr氧化物层，以及制造半导体存储器件的电容器的方法，其具有 ZrO 2薄膜。

7. 发明申请

US20100170441A1 Method of Forming Metal Oxide and Apparatus for Performing the Same 审中-公开
标题翻译：形成金属氧化物的方法及其执行装置
公开(公告)号：US20100170441A1
公开(公告)日：2010-07-08
申请号：US12729973
申请日：2010-03-23
申请人： Seok-Jun Won , Yong-Min Yoo , Min-Woo Song , Dae-Youn Kim , Young-Hoon Kim , Weon-Hong Kim , Jung-Min Park , Sun-Mi Song
发明人： Seok-Jun Won , Yong-Min Yoo , Min-Woo Song , Dae-Youn Kim , Young-Hoon Kim , Weon-Hong Kim , Jung-Min Park , Sun-Mi Song
IPC分类号： H01L21/46
CPC分类号： C01G25/02 , C01G23/047 , C01G27/02 , C01G35/00 , C01P2006/40
摘要： In a method and an apparatus for forming metal oxide on a substrate, a source gas including metal precursor flows along a surface of the substrate to form a metal precursor layer on the substrate. An oxidizing gas including ozone flows along a surface of the metal precursor layer to oxidize the metal precursor layer so that the metal oxide is formed on the substrate. A radio frequency power is applied to the oxidizing gas flowing along the surface of the metal precursor layer to accelerate a reaction between the metal precursor layer and the oxidizing gas. Acceleration of the oxidation reaction may improve electrical characteristics and uniformity of the metal oxide.
摘要翻译：在基板上形成金属氧化物的方法和装置中，包括金属前体的源气体沿着基板的表面流动，以在基板上形成金属前体层。包括臭氧的氧化气体沿着金属前体层的表面流动，以氧化金属前体层，从而在基板上形成金属氧化物。对沿着金属前体层的表面流动的氧化气体施加射频功率，以加速金属前体层与氧化气体的反应。氧化反应的加速可以改善金属氧化物的电特性和均匀性。

8. 发明授权

US07708969B2 Method of forming metal oxide 有权
标题翻译：形成金属氧化物的方法
公开(公告)号：US07708969B2
公开(公告)日：2010-05-04
申请号：US11775111
申请日：2007-07-09
申请人： Seok-Jun Won , Yong-Min Yoo , Min-Woo Song , Dae-Youn Kim , Young-Hoon Kim , Weon-Hong Kim , Jung-Min Park , Sun-Mi Song
发明人： Seok-Jun Won , Yong-Min Yoo , Min-Woo Song , Dae-Youn Kim , Young-Hoon Kim , Weon-Hong Kim , Jung-Min Park , Sun-Mi Song
IPC分类号： C01F17/00 , C25D17/00
CPC分类号： C01G25/02 , C01G23/047 , C01G27/02 , C01G35/00 , C01P2006/40
摘要： In a method and an apparatus for forming metal oxide on a substrate, a source gas including metal precursor flows along a surface of the substrate to form a metal precursor layer on the substrate. An oxidizing gas including ozone flows along a surface of the metal precursor layer to oxidize the metal precursor layer so that the metal oxide is formed on the substrate. A radio frequency power is applied to the oxidizing gas flowing along the surface of the metal precursor layer to accelerate a reaction between the metal precursor layer and the oxidizing gas. Acceleration of the oxidation reaction may improve electrical characteristics and uniformity of the metal oxide.
摘要翻译：在基板上形成金属氧化物的方法和装置中，包括金属前体的源气体沿着基板的表面流动，以在基板上形成金属前体层。包括臭氧的氧化气体沿着金属前体层的表面流动，以氧化金属前体层，从而在基板上形成金属氧化物。对沿着金属前体层的表面流动的氧化气体施加射频功率，以加速金属前体层与氧化气体的反应。氧化反应的加速可以改善金属氧化物的电特性和均匀性。

9. 发明申请

US20070264821A1 Methods of forming a semiconductor device 审中-公开
标题翻译：形成半导体器件的方法
公开(公告)号：US20070264821A1
公开(公告)日：2007-11-15
申请号：US11785305
申请日：2007-04-17
申请人： Ju-Youn Kim , Seok-Jun Won , Rak-Hwan Kim , Min-Woo Song , Weon-Hong Kim , Jung-Min Park
发明人： Ju-Youn Kim , Seok-Jun Won , Rak-Hwan Kim , Min-Woo Song , Weon-Hong Kim , Jung-Min Park
IPC分类号： H01L21/44
CPC分类号： H01L21/32051 , H01L28/75
摘要： A method of forming a semiconductor device may include forming a first conductive metal compound layer on a substrate using a metal organic chemical vapor deposition (MOCVD) process and/or forming a second conductive metal compound layer on the first conductive metal compound layer using a physical vapor deposition (PVD) process. The first and second conductive metal compound layers may be formed while reducing or preventing the exposure of the first conductive metal compound layer to oxygen atoms, thus reducing degradation of the first conductive metal compound layer.
摘要翻译：形成半导体器件的方法可以包括：使用金属有机化学气相沉积（MOCVD）工艺在衬底上形成第一导电金属化合物层和/或在第一导电金属化合物层上形成第二导电金属化合物层，使用物理气相沉积（PVD）工艺。可以在减少或防止第一导电金属化合物层暴露于氧原子的同时形成第一和第二导电金属化合物层，从而减少第一导电金属化合物层的劣化。

10. 发明申请

US20080265371A1 Capacitor Unit and Method of Forming the Same 有权
标题翻译：电容器单元及其形成方法
公开(公告)号：US20080265371A1
公开(公告)日：2008-10-30
申请号：US12106830
申请日：2008-04-21
申请人： Jung-Min Park , Seok-Jun Won , Min-Woo Song , Weon-Hong Kim
发明人： Jung-Min Park , Seok-Jun Won , Min-Woo Song , Weon-Hong Kim
IPC分类号： H01L29/66 , H01L21/20
CPC分类号： H01L28/65 , H01G4/33 , H01G4/38 , Y10S438/957
摘要： A capacitor unit includes a first capacitor and a second capacitor. The first capacitor includes a first lower electrode, a first dielectric layer pattern and a first upper electrode sequentially stacked. The first capacitor includes a first control layer pattern for controlling a voltage coefficient of capacitance (VCC) of the first capacitor between the first lower electrode and the first dielectric layer pattern. The second capacitor includes a second lower electrode, a second dielectric layer pattern and a second upper electrode sequentially stacked. The second lower electrode is electrically connected to the first upper electrode, and the second upper electrode is electrically connected to the second lower electrode. The second capacitor includes a second control layer pattern for controlling a VCC of the second capacitor between the second lower electrode and the second dielectric layer pattern.
摘要翻译：电容器单元包括第一电容器和第二电容器。第一电容器包括第一下电极，第一电介质层图案和顺序层叠的第一上电极。第一电容器包括用于控制第一电容器和第一电介质层图案之间的第一电容器的电容电压（VCC）的电压系数的第一控制层图案。第二电容器包括顺序层叠的第二下电极，第二电介质层图案和第二上电极。第二下部电极与第一上部电极电连接，第二上部电极与第二下部电极电连接。第二电容器包括用于在第二下电极和第二电介质层图案之间控制第二电容器的VCC的第二控制层图案。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式