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1. 发明授权

US08344434B2 Semiconductor device having ferroelectric capacitor 有权
标题翻译：具有铁电电容器的半导体装置
公开(公告)号：US08344434B2
公开(公告)日：2013-01-01
申请号：US13100511
申请日：2011-05-04
申请人： Wensheng Wang , Yoshimasa Horii
发明人： Wensheng Wang , Yoshimasa Horii
IPC分类号： H01L21/02 , H01L27/108 , H01L29/94 , H01L21/00 , H01L21/8242
CPC分类号： H01L27/0629 , H01L27/11502 , H01L27/11507 , H01L28/56 , H01L28/65
摘要： The present invention provides a method for manufacturing a semiconductor device, including the steps of: forming a first ferroelectric film on a first conductive film by a film-forming method including at least a step of forming a film by a sol-gel method; forming a second ferroelectric film on the first ferroelectric film by a sputtering method; forming a second conductive film on the second ferroelectric film; and forming a capacitor provided with a lower electrode, a capacitor dielectric film and an upper electrode by patterning the first conductive film, the first and second ferroelectric films and the second conductive film.
摘要翻译：本发明提供一种制造半导体器件的方法，包括以下步骤：通过至少包括通过溶胶 - 凝胶法形成膜的步骤的成膜方法在第一导电膜上形成第一强电介质膜; 通过溅射法在第一铁电体膜上形成第二铁电体膜; 在所述第二铁电体膜上形成第二导电膜; 以及通过对第一导电膜，第一和第二铁电体膜和第二导电膜进行构图来形成设置有下电极，电容器电介质膜和上电极的电容器。

2. 发明授权

US08102022B2 Semiconductor device manufacturing method and semiconductor device 有权
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：US08102022B2
公开(公告)日：2012-01-24
申请号：US12630337
申请日：2009-12-03
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L29/92
CPC分类号： H01L28/75 , H01L27/1057 , H01L27/11507 , H01L28/56
摘要： In a semiconductor device manufacturing method, an amorphous or microcrystalline metal oxide film is formed over a first metal film which is preferentially oriented along a predetermined crystal plane. After that, a ferroelectric film is formed by a MOCVD method. When the ferroelectric film is formed, the metal oxide film formed over the first metal film is reduced to a second metal film and the ferroelectric film is formed over the second metal film. When the ferroelectric film is formed, the amorphous or microcrystalline metal oxide film is apt to be reduced uniformly. As a result, the second metal film the orientation of which is good is obtained and the ferroelectric film the orientation of which is good is formed over the second metal film. After the ferroelectric film is formed, an upper electrode is formed over the ferroelectric film.
摘要翻译：在半导体器件制造方法中，在优先沿着预定的晶面取向的第一金属膜上形成非晶或微晶金属氧化物膜。之后，通过MOCVD法形成铁电体膜。当形成铁电体膜时，形成在第一金属膜上的金属氧化物膜被还原为第二金属膜，并且在第二金属膜上形成铁电体膜。当形成铁电体膜时，非晶或微晶金属氧化物膜容易均匀地被还原。结果，获得其取向良好的第二金属膜，并且在第二金属膜上形成其取向良好的铁电体膜。在形成铁电体膜之后，在铁电体膜上形成上部电极。

3. 发明申请

US20110203916A1 MAGNETRON-SPUTTERING FILM-FORMING APPARATUS AND MANUFACTURING METHOD FOR A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于半导体器件的磁控溅射成膜装置和制造方法
公开(公告)号：US20110203916A1
公开(公告)日：2011-08-25
申请号：US13100588
申请日：2011-05-04
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： C23C14/06 , C23C14/34
CPC分类号： C23C14/541 , C23C14/088 , C23C14/5806 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A magnetron-sputtering film-forming apparatus includes: a vacuum film-forming chamber (11); electrostatic chuck units (12) for adjusting a temperature of the substrate (14); a target (15) for causing high-frequency magnetron sputtering; power supply units (17) for applying a discharge voltage between the substrate (14) and the target (15), and calculating an integral power consumption of an electricity discharged by the target (15); and control units (18) for controlling the electrostatic chuck units (12) and the power supply units (17). In the magnetron-sputtering film-forming apparatus, the temperature of the substrate to be processed (14) that is most suitable for sputtering is calculated based on the integral power consumption of the electricity discharged by the target (15) until that time, and the substrate (14) is adjusted to have a predetermined temperature to be subjected to the sputtering.
摘要翻译：磁控溅射成膜装置包括：真空成膜室（11）; 用于调节衬底（14）的温度的静电吸盘单元（12）; 用于引起高频磁控溅射的靶（15）; 电源单元（17），用于在所述基板（14）和所述目标（15）之间施加放电电压，并计算由所述目标（15）放电的电力的积分功率消耗; 以及用于控制静电卡盘单元（12）和电源单元（17）的控制单元（18）。在磁控溅射成膜装置中，基于目标（15）直到那时放电的电力的积分耗电量来计算最适合溅射的待处理基板（14）的温度，以及将衬底（14）调节为具有预定温度以进行溅射。

4. 发明授权

US07928479B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07928479B2
公开(公告)日：2011-04-19
申请号：US11957752
申请日：2007-12-17
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L29/76 , H01L21/02
CPC分类号： H01L27/11502 , G11C11/221 , H01L27/11507 , H01L28/55 , H01L28/65 , H01L28/75
摘要： A ferroelectric capacitor is formed over a semiconductor substrate (10), and thereafter, interlayer insulating films (48, 50, 52) covering the ferroelectric capacitor are formed. Next, a contact hole (54) reaching a top electrode (40) is formed in the interlayer insulating films (48, 50, 52). Next, a wiring (58) electrically connected to the top electrode (40) through the contact hole (54) is formed on the interlayer insulating films (48, 50, 52). At the time of forming the top electrode (40), conductive oxide films (40a, 40b) are formed, and then a cap film (40c) composed of a noble metal exhibiting less catalytic action than Pt and having a thickness of 150 nm or less is formed on the conductive oxide films (40a, 40b).
摘要翻译：在半导体衬底（10）上形成铁电电容器，然后形成覆盖铁电电容器的层间绝缘膜（48,50,52）。接下来，在层间绝缘膜（48,50,52）中形成到达顶部电极（40）的接触孔（54）。接下来，在层间绝缘膜（48,50,52）上形成有通过接触孔（54）电连接到顶部电极（40）的布线（58）。在形成顶部电极（40）时，形成导电氧化物膜（40a，40b），然后形成由贵金属组成的覆盖膜（40c），该贵金属具有比Pt更小的催化作用并且具有150nm的厚度或在导电氧化物膜（40a，40b）上形成较少。

5. 发明申请

US20100207178A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100207178A1
公开(公告)日：2010-08-19
申请号：US12031960
申请日：2008-02-15
申请人： Makoto TAKAHASHI , Mitsushi Fujiki , Kenkichi Suezawa , Wensheng Wang , Ko Nakamura
发明人： Makoto TAKAHASHI , Mitsushi Fujiki , Kenkichi Suezawa , Wensheng Wang , Ko Nakamura
IPC分类号： H01L27/07 , H01L21/8242
CPC分类号： H01L27/0733 , G11C11/22 , H01L27/11507 , H01L28/55
摘要： A method for manufacturing a semiconductor device comprises: forming a lower electrode on a semiconductor substrate, sputtering a ferroelectric film on the lower electrode using a target, thermal treating the ferroelectric film in an atmosphere containing oxygen in accordance with an accumulated period of use of the target for fabricating the ferroelectric film, and forming an upper electrode on the ferroelectric film.
摘要翻译：一种制造半导体器件的方法包括：在半导体衬底上形成下电极，使用靶溅射下电极上的强电介质膜，根据累积的使用时间在含氧气氛中对铁电体膜进行热处理用于制造铁电体膜的目标，并且在铁电体膜上形成上电极。

6. 发明授权

US07772628B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07772628B2
公开(公告)日：2010-08-10
申请号：US11023576
申请日：2004-12-29
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L29/41 , H01L29/43
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： A lower electrode film is formed above a semiconductor substrate first, and then a ferroelectric film is formed on the lower electrode film. After that, an upper electrode film is formed on the ferroelectric film. When forming the upper electrode, an IrOx film containing crystallized small crystals when formed is formed on the ferroelectric film first, and then an IrOx film containing columnar crystals is formed.
摘要翻译：首先在半导体基板的上方形成下电极膜，然后在下电极膜上形成铁电体膜。之后，在铁电体膜上形成上部电极膜。当形成上电极时，首先在铁电体膜上形成含有结晶化的小晶体的IrOx膜，然后形成含有柱状晶体的IrOx膜。

7. 发明申请

US20090309188A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090309188A1
公开(公告)日：2009-12-17
申请号：US12547126
申请日：2009-08-25
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L29/92 , H01L21/02 , C23C14/34
CPC分类号： H01L28/40 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： A semiconductor device includes a substrate and a ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode. The upper electrode includes a first layer formed of an oxide whose stoichiometric composition is expressed as AOx1 and whose actual composition is expressed as AOx2; a second layer formed on the first layer and formed of an oxide whose stoichiometric composition is expressed as BOy1 and whose actual composition is expressed as BOy2; and a metal layer formed on the second layer. The second layer is higher in ratio of oxidation than the first layer. The composition parameters x1, x2, y1, and y2 satisfy y2/y1>x2/x1, and the second layer includes an interface layer of the stoichiometric composition formed at an interface with the metal layer. The interface layer is higher in ratio of oxidation than the rest of the second layer.
摘要翻译：半导体器件包括基板和包括下电极，铁电体膜和上电极的铁电电容器。上电极包括由化学计量组成表示为AOx1的氧化物形成的第一层，其实际组成表示为AOx2; 形成在第一层上并由化学计量组成表示为BOy1并且其实际组成表示为BOy2的氧化物形成的第二层; 以及形成在第二层上的金属层。第二层的氧化比例高于第一层。组成参数x1，x2，y1和y2满足y2 / y1> x2 / x1，第二层包括在与金属层的界面处形成的化学计量组成的界面层。界面层的氧化比例高于第二层的其余部分。

8. 发明授权

US07605007B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07605007B2
公开(公告)日：2009-10-20
申请号：US12040393
申请日：2008-02-29
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L21/00 , H01L21/20 , H01L29/76 , H01L29/00
CPC分类号： H01L27/11507 , H01L27/11502 , H01L28/55 , H01L28/65 , H01L28/75
摘要： An upper electrode film includes a first conductive oxidation layer made of an oxide expressed by a chemical formula M1Ox2, a second conductive oxidation layer made of an oxide expressed by a chemical formula M2Oy2 and a third conductive oxidation layer. Here, the second conductive oxidation layer is formed to have a degree of oxidation higher than the first conductive oxidation layer and the third conductive oxidation layer, and among the composition parameters x1, x2, y1, y2, z1 and z2, there are the following relations, y2/y1>x2/x1, y2/y1>z2/z1, and z2/z1≧x2/x1.
摘要翻译：上电极膜包括由化学式M1Ox2表示的氧化物形成的第一导电氧化层，由化学式M 2 O y 2表示的氧化物形成的第二导电氧化层和第三导电氧化层。这里，第二导电氧化层形成为具有高于第一导电氧化层和第三导电氧化层的氧化度，并且在组成参数x1，x2，y1，y2，z1和z2中，存在以下关系，y2 / y1> x2 / x1，y2 / y1> z2 / z1，z2 / z1> = x2 / x1。

9. 发明授权

US07419837B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07419837B2
公开(公告)日：2008-09-02
申请号：US11443136
申请日：2006-05-31
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L21/00
CPC分类号： H01L27/11507 , G11C11/22 , H01L27/11502 , H01L28/57 , H01L28/65
摘要： A Pt film (24), a PLZT film (25), and a top electrode film (26) are formed above a semiconductor substrate (11). Next, the top electrode film (26) is patterned. Then, a PLZT film (27) covering an exposed portion of the PLZT film (25) is formed as an evaporation preventing film. Then, heat treatment is performed in an oxidative atmosphere to recover damage sustained to the PLZT film (25). Heat treatment is not performed between patterning of the top electrode film (26) and formation of the PLZT film (27). Thereafter, a ferroelectric capacitor is formed by patterning the PLZT film (25) and the Pt film (24).
摘要翻译：在半导体衬底（11）的上方形成Pt膜（24），PLZT膜（25）和顶部电极膜（26）。接下来，对顶部电极膜（26）进行图案化。然后，形成覆盖PLZT膜（25）的露出部分的PLZT膜（27）作为防蒸镀膜。然后，在氧化气氛中进行热处理，以回收对PLZT膜（25）的损伤。在图案化顶部电极膜（26）和PLZT膜（27）的形成之间不进行热处理。此后，通过使PLZT膜（25）和Pt膜（24）构图来形成铁电电容器。

10. 发明申请

US20080061345A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080061345A1
公开(公告)日：2008-03-13
申请号：US11898374
申请日：2007-09-11
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L28/40 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： The semiconductor device has an insulation layer formed over a semiconductor substrate, a conductor plug 46 buried in the insulation layer, a capacitor formed above the insulation layer and the conductor plug and including a lower electrode formed of the first conduction film and the second conduction film formed over the first conduction film and formed of Pt, Pt alloy, Pd or Pd alloy, a capacitor dielectric film formed of a ferroelectric or a high dielectric formed over the lower electrode and an upper electrode formed over the capacitor dielectric film, the capacitor dielectric film contains a first element of Pb or Bi, and the concentration peak of the first element diffused in the lower electrode from the capacitor dielectric film positioning in the interface between the first conduction film and the second conduction film.
摘要翻译：半导体器件具有形成在半导体衬底上的绝缘层，埋在绝缘层中的导体插塞46，形成在绝缘层上方的电容器和导体插头，并且包括由第一导电膜和第二导电膜形成的下电极形成在第一导电膜上并由Pt，Pt合金，Pd或Pd合金形成，由在下电极上形成的铁电或高电介质形成的电容器电介质膜和形成在电容器电介质膜上的上电极，电容器电介质膜含有Pb或Bi的第一元素，并且第一元素的浓度峰值从位于第一导电膜和第二导电膜之间的界面中的电容器电介质膜在下电极中扩散。

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