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1. 发明申请

US20100207178A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100207178A1
公开(公告)日：2010-08-19
申请号：US12031960
申请日：2008-02-15
申请人： Makoto TAKAHASHI , Mitsushi Fujiki , Kenkichi Suezawa , Wensheng Wang , Ko Nakamura
发明人： Makoto TAKAHASHI , Mitsushi Fujiki , Kenkichi Suezawa , Wensheng Wang , Ko Nakamura
IPC分类号： H01L27/07 , H01L21/8242
CPC分类号： H01L27/0733 , G11C11/22 , H01L27/11507 , H01L28/55
摘要： A method for manufacturing a semiconductor device comprises: forming a lower electrode on a semiconductor substrate, sputtering a ferroelectric film on the lower electrode using a target, thermal treating the ferroelectric film in an atmosphere containing oxygen in accordance with an accumulated period of use of the target for fabricating the ferroelectric film, and forming an upper electrode on the ferroelectric film.
摘要翻译：一种制造半导体器件的方法包括：在半导体衬底上形成下电极，使用靶溅射下电极上的强电介质膜，根据累积的使用时间在含氧气氛中对铁电体膜进行热处理用于制造铁电体膜的目标，并且在铁电体膜上形成上电极。

2. 发明授权

US08338249B2 Semiconductor device and method for manufacturing the same having improved polarization reversal characteristic 有权
标题翻译：具有改善的极化反转特性的半导体装置及其制造方法
公开(公告)号：US08338249B2
公开(公告)日：2012-12-25
申请号：US12031960
申请日：2008-02-15
申请人： Makoto Takahashi , Mitsushi Fujiki , Kenkichi Suezawa , Wensheng Wang , Ko Nakamura
发明人： Makoto Takahashi , Mitsushi Fujiki , Kenkichi Suezawa , Wensheng Wang , Ko Nakamura
IPC分类号： H01L21/8234
CPC分类号： H01L27/0733 , G11C11/22 , H01L27/11507 , H01L28/55
摘要： A method for manufacturing a semiconductor device comprises: forming a lower electrode on a semiconductor substrate, sputtering a ferroelectric film on the lower electrode using a target, thermal treating the ferroelectric film in an atmosphere containing oxygen in accordance with an accumulated period of use of the target for fabricating the ferroelectric film, and forming an upper electrode on the ferroelectric film.
摘要翻译：一种制造半导体器件的方法包括：在半导体衬底上形成下电极，使用靶溅射下电极上的强电介质膜，根据累积的使用时间在含氧气氛中对铁电体膜进行热处理用于制造铁电体膜的目标，并且在铁电体膜上形成上电极。

3. 发明申请

US20070122917A1 Forming method of ferroelectric capacitor and manufacturing method of semiconductor device 审中-公开
标题翻译：铁电电容器的形成方法和半导体器件的制造方法
公开(公告)号：US20070122917A1
公开(公告)日：2007-05-31
申请号：US11407207
申请日：2006-04-20
申请人： Mitsushi Fujiki , Kenkichi Suezawa , Makoto Takahashi , Ko Nakamura , Wensheng Wang
发明人： Mitsushi Fujiki , Kenkichi Suezawa , Makoto Takahashi , Ko Nakamura , Wensheng Wang
IPC分类号： H01L21/00 , H01L21/8242
CPC分类号： H01L27/11507 , H01L27/11502 , H01L28/55 , H01L28/65
摘要： Disclosed is a ferroelectric capacitor forming method of allowing a FeRAM to be stably mass-produced. In forming the ferroelectric capacitor for the FeRAM, a PZT layer is formed on a lower electrode layer by a sputtering method. Then, a first RTA treatment for crystallizing the PZT is performed in an environment controlled such that predetermined capacitor performance such as a data holding property can be obtained regardless of the amount of a target previously used (used hours) in the sputtering method. For example, the O2 gas flow rate is controlled in an appropriate range during the first RTA treatment. Thereafter, formation of an upper electrode layer or a second RTA treatment is performed. As a result, the ferroelectric capacitor having predetermined capacitor performance can be formed with high yield, so that the FeRAM can be stably mass-produced.
摘要翻译：公开了一种允许稳定批量生产FeRAM的铁电电容器形成方法。在形成FeRAM的铁电电容器时，通过溅射法在下电极层上形成PZT层。然后，在控制环境中进行用于结晶PZT的第一RTA处理，使得可以获得诸如数据保持特性的预定电容器性能，而与溅射方法中先前使用的目标量（使用时数）无关。例如，在第一次RTA处理期间将O 2气体流量控制在适当的范围内。此后，进行上电极层的形成或第二RTA处理。结果，可以以高产率形成具有预定电容器性能的铁电电容器，从而可以稳定地批量生产FeRAM。

4. 发明授权

US06713808B2 Semiconductor capacitor with diffusion prevention layer 有权
标题翻译：具有扩散防护层的半导体电容器
公开(公告)号：US06713808B2
公开(公告)日：2004-03-30
申请号：US10115208
申请日：2002-04-04
申请人： Wensheng Wang , Mitsushi Fujiki , Ko Nakamura
发明人： Wensheng Wang , Mitsushi Fujiki , Ko Nakamura
IPC分类号： H01L2976
CPC分类号： H01L28/75 , H01L27/10814 , H01L28/55
摘要： There is provided the capacitor which has the lower electrode having a structure in which the first conductive layer containing a first metal, the second conductive layer that is formed on the first conductive layer and made of the metal oxide of the second metal different from the first metal, and the third conductive layer that is formed on the second conductive layer and made of the third metal different from the first metal are formed sequentially; the dielectric layer formed on the lower electrode; and the upper electrode formed on the capacitor dielectric layer.
摘要翻译：提供了具有下电极的电容器，其中第一导电层包含第一金属，第二导电层形成在第一导电层上并且由与第一金属不同的第二金属的金属氧化物金属，并且形成在第二导电层上并且由与第一金属不同的第三金属制成的第三导电层依次形成; 形成在下电极上的电介质层; 并且形成在电容器电介质层上的上电极。

5. 发明授权

US06933156B2 Semiconductor capacitor with diffusion prevention layer 有权
标题翻译：具有扩散防护层的半导体电容器
公开(公告)号：US06933156B2
公开(公告)日：2005-08-23
申请号：US10764519
申请日：2004-01-27
申请人： Wensheng Wang , Mitsushi Fujiki , Ko Nakamura
发明人： Wensheng Wang , Mitsushi Fujiki , Ko Nakamura
IPC分类号： H01L23/52 , H01L21/02 , H01L21/3205 , H01L21/8246 , H01L27/105 , H01L27/108 , H01L21/00 , H01L31/113
CPC分类号： H01L28/75 , H01L27/10814 , H01L28/55
摘要： A capacitor which has a lower electrode having a structure in which the first conductive layer containing a first metal, a second conductive layer that is formed on the first conductive layer and made of the metal oxide of the second metal different from the first metal, and a third conductive layer that is formed on the second conductive layer and made of a third metal different from the first metal. These layers are formed sequentially. A dielectric layer is formed on the lower electrode, and an upper electrode is formed on the capacitor dielectric layer.
摘要翻译：一种具有下电极的电容器，其具有第一导电层，其包含第一金属，第二导电层，形成在第一导电层上，并且由与第一金属不同的第二金属的金属氧化物制成，第三导电层，其形成在第二导电层上并且由不同于第一金属的第三金属制成。这些层顺序地形成。在下电极上形成介电层，在电容介电层上形成上电极。

6. 发明授权

US08497537B2 Semiconductor device with ferro-electric capacitor 失效
标题翻译：具有铁电电容器的半导体器件
公开(公告)号：US08497537B2
公开(公告)日：2013-07-30
申请号：US12128088
申请日：2008-05-28
申请人： Wensheng Wang , Ko Nakamura
发明人： Wensheng Wang , Ko Nakamura
IPC分类号： H01L21/02
CPC分类号： H01L21/02107 , H01L27/11507 , H01L28/57 , H01L28/65
摘要： A semiconductor device has a ferro-electric capacitor with small leak current and less process deterioration even upon miniaturization. The semiconductor device includes: a semiconductor element formed in a semiconductor substrate; lamination of an interlayer insulating film and a lower insulating shielding film having a hydrogen/moisture shielding function, the lamination being formed covering the semiconductor element; a conductive adhesion enhancing film formed above the lower insulating shielding film; and a ferro-electric capacitor including a lower electrode formed above the conductive adhesion enhancing film, a ferro-electric film formed on the lower electrode and being disposed within the lower electrode as viewed in plan, and an upper electrode formed on the ferro-electric film and being disposed within the ferro-electric film as viewed in plan, wherein the conductive adhesion enhancing film has a function of improving adhesion of the lower electrode and reducing leak current of the ferro-electric capacitor.
摘要翻译：半导体器件具有漏电流小的铁电电容，即使在小型化时也具有较少的工艺劣化。半导体器件包括：形成在半导体衬底中的半导体元件; 夹层绝缘膜和具有氢/水分屏蔽功能的下绝缘屏蔽膜，形成覆盖半导体元件的叠层; 形成在下绝缘屏蔽膜上方的导电粘附增强膜; 以及包含形成在导电性粘合增强膜上的下电极的铁电电容器，形成在下电极上的铁电膜，并且设置在俯视图中的下电极内;以及上电极，形成在铁电膜，并且设置在平面图所示的铁电膜内，其中，导电性粘附增强膜具有提高下部电极的附着力和降低铁电体的漏电流的功能。

7. 发明授权

US07078242B2 Manufacturing method of semiconducter device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07078242B2
公开(公告)日：2006-07-18
申请号：US10835572
申请日：2004-04-30
申请人： Katsuyoshi Matsuura , Wensheng Wang , Ko Nakamura
发明人： Katsuyoshi Matsuura , Wensheng Wang , Ko Nakamura
IPC分类号： H01I21/00
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57 , H01L28/65
摘要： An IrOx film is formed as a first conductive oxide film on a PLZT film by a reactive sputtering method. Thereafter, thermal treatment by, for example, RTA is performed in an atmosphere containing oxygen having partial pressure of less than 5% of atmospheric pressure. As a result, crystallization of the PLZT film is promoted, and annealing treatment is performed for the IrOx film. Thereafter, furnace annealing at 600° C. or higher, for example, 650° C. is performed for 60 minutes in, for example, an O2 atmosphere as recovering annealing to recover oxygen deficiency in the PLZT film. Subsequently, an IrO2 film is formed as a second conductive oxide film on the IrOx film by a sputtering method.
摘要翻译：通过反应溅射法在PLZT膜上形成作为第一导电氧化膜的IrO xS膜。此后，通过例如RTA的热处理在含有分压小于5％的大气压的氧的气氛中进行。结果促进了PLZT膜的结晶化，对IrO x薄膜进行退火处理。此后，在600℃或更高（例如650℃）下的炉退火在例如O 2 2气氛中进行60分钟，作为回收退火以回收PLZT中的氧缺乏电影。随后，通过溅射法在IrO 2膜上形成IrO 2膜作为第二导电氧化物膜。

8. 发明申请

US20050136556A1 Manufacturing method of semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20050136556A1
公开(公告)日：2005-06-23
申请号：US10835572
申请日：2004-04-30
申请人： Katsuyoshi Matsuura , Wensheng Wang , Ko Nakamura
发明人： Katsuyoshi Matsuura , Wensheng Wang , Ko Nakamura
IPC分类号： H01L21/8234 , H01L21/00 , H01L21/02 , H01L21/8246 , H01L27/088 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57 , H01L28/65
摘要： An IrOx film is formed as a first conductive oxide film on a PLZT film by a reactive sputtering method. Thereafter, thermal treatment by, for example, RTA is performed in an atmosphere containing oxygen having partial pressure of less than 5% of atmospheric pressure. As a result, crystallization of the PLZT film is promoted, and annealing treatment is performed for the IrOx film. Thereafter, furnace annealing at 600° C. or higher, for example, 650° C. is performed for 60 minutes in, for example, an O2 atmosphere as recovering annealing to recover oxygen deficiency in the PLZT film. Subsequently, an IrO2 film is formed as a second conductive oxide film on the IrOx film by a sputtering method.
摘要翻译：通过反应溅射法在PLZT膜上形成作为第一导电氧化膜的IrO xS膜。此后，通过例如RTA的热处理在含有分压小于5％的大气压的氧的气氛中进行。结果促进了PLZT膜的结晶化，对IrO x薄膜进行退火处理。此后，在600℃或更高（例如650℃）下的炉退火在例如O 2 2气氛中进行60分钟，作为回收退火以回收PLZT中的氧缺乏电影。随后，通过溅射法在IrO 2膜上形成IrO 2膜作为第二导电氧化物膜。

9. 发明授权

US08652854B2 Manufacturing method of a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08652854B2
公开(公告)日：2014-02-18
申请号：US13417811
申请日：2012-03-12
申请人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
发明人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
IPC分类号： H01L21/00
CPC分类号： H01L28/65 , H01L21/31691 , H01L28/56
摘要： There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.
摘要翻译：提供一种形成在粘合剂层上的电容器下电极，其表面粗糙度为0.79nm或更小，并且具有从垂直于衬底上表面的垂直方向倾斜2.3°或更小的（111）取向，具有（111）取向从基板的垂直方向倾斜3.5°以下的结构的铁电体层和电容器上电极。

10. 发明授权

US08153448B2 Manufacturing method of a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08153448B2
公开(公告)日：2012-04-10
申请号：US12453451
申请日：2009-05-12
申请人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
发明人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
IPC分类号： H01L21/00
CPC分类号： H01L28/65 , H01L21/31691 , H01L28/56
摘要： There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.
摘要翻译：提供一种形成在粘合剂层上的电容器下电极，其表面粗糙度为0.79nm或更小，并且具有从垂直于衬底上表面的垂直方向倾斜2.3°或更小的（111）取向，具有（111）取向从基板的垂直方向倾斜3.5°以下的结构的铁电体层和电容器上电极。

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