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1. 发明申请

US20100207178A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100207178A1
公开(公告)日：2010-08-19
申请号：US12031960
申请日：2008-02-15
申请人： Makoto TAKAHASHI , Mitsushi Fujiki , Kenkichi Suezawa , Wensheng Wang , Ko Nakamura
发明人： Makoto TAKAHASHI , Mitsushi Fujiki , Kenkichi Suezawa , Wensheng Wang , Ko Nakamura
IPC分类号： H01L27/07 , H01L21/8242
CPC分类号： H01L27/0733 , G11C11/22 , H01L27/11507 , H01L28/55
摘要： A method for manufacturing a semiconductor device comprises: forming a lower electrode on a semiconductor substrate, sputtering a ferroelectric film on the lower electrode using a target, thermal treating the ferroelectric film in an atmosphere containing oxygen in accordance with an accumulated period of use of the target for fabricating the ferroelectric film, and forming an upper electrode on the ferroelectric film.
摘要翻译：一种制造半导体器件的方法包括：在半导体衬底上形成下电极，使用靶溅射下电极上的强电介质膜，根据累积的使用时间在含氧气氛中对铁电体膜进行热处理用于制造铁电体膜的目标，并且在铁电体膜上形成上电极。

2. 发明申请

US20080057598A1 METHOD FOR FORMING FERROELECTRIC CAPACITOR AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于形成电容器的方法和用于制造半导体器件的方法
公开(公告)号：US20080057598A1
公开(公告)日：2008-03-06
申请号：US11847717
申请日：2007-08-30
申请人： Kenkichi SUEZAWA , Mitsushi FUJIKI , Makoto TAKAHASHI , Ko NAKAMURA , Wensheng WANG
发明人： Kenkichi SUEZAWA , Mitsushi FUJIKI , Makoto TAKAHASHI , Ko NAKAMURA , Wensheng WANG
IPC分类号： H01L21/02
CPC分类号： H01L21/02197 , H01L21/02266 , H01L21/02337 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： A ferroelectric capacitor formation method that enables stable FeRAM mass production. When a ferroelectric capacitor of an FeRAM is formed, a ferroelectric layer is formed over a lower electrode layer by a sputtering method by keeping a stage at a temperature lower than or equal to 35° C. To crystallize the ferroelectric layer, first RTA treatment is performed in an atmosphere of a mixed gas which contains an inert gas and O2 gas a concentration of which is 1.25 volume percent or greater. The formation of an upper electrode layer, second RTA treatment, patterning, and the like are then performed to form the ferroelectric capacitor. By doing so, ferroelectric capacitors each having predetermined capacitor performance can be formed with a high yield and FeRAMs can stably be mass-produced.
摘要翻译：铁电电容器的形成方法，能够稳定地生产FeRAM。当形成FeRAM的铁电电容器时，通过溅射法在下电极层上形成铁电层，通过将级保持在低于或等于35℃的温度。为了使铁电层结晶，首先进行RTA处理在含有惰性气体和浓度为1.25体积％以上的O 2气体的混合气体的气氛中进行。然后进行上电极层的形成，第二RTA处理，图案化等，以形成铁电电容器。通过这样做，可以以高产率形成各自具有预定电容器性能的铁电电容器，并且可以稳定地批量生产FeRAM。

3. 发明申请

US20110250472A1 SHIELDING GAS FOR MAG WELDING, MAG WELDING METHOD, AND WELDED STRUCTURE 审中-公开
标题翻译： MAG焊接用焊接气体，MAG焊接方法和焊接结构
公开(公告)号：US20110250472A1
公开(公告)日：2011-10-13
申请号：US13079307
申请日：2011-04-04
申请人： Yasuhito KAMIJO , Satoru ASAI , Katsunori WADA , Makoto TAKAHASHI
发明人： Yasuhito KAMIJO , Satoru ASAI , Katsunori WADA , Makoto TAKAHASHI
IPC分类号： B23K9/16 , B32B15/01
CPC分类号： B23K9/0213 , B23K9/164 , B23K9/173 , B23K35/383 , B23K2101/001 , B23K2101/10 , B23K2103/04 , B23K2103/05 , Y10T428/12979
摘要： The shielding gas for MAG welding according to an embodiment is a shielding gas for MAG welding to perform narrow gap welding of a high Cr steel containing 8 wt % to 13 wt % of Cr with one layer-one pass by using a solid wire containing 8 wt % to 13 wt % of Cr, and the shielding gas for MAG welding comprises a ternary mixed gas of 5% by volume to 17% by volume of a carbon dioxide gas, 30% by volume to 80% by volume of a helium gas, and a balance of an argon gas.
摘要翻译：根据实施例的用于MAG焊接的保护气体是用于MAG焊接的保护气体，通过使用含有8个碳原子的固体电线，通过一次通过对含有8重量％至13重量％的Cr的高Cr钢进行窄间隙焊接 wt％〜13wt％的Cr，MAG焊接用保护气体包括5体积％〜17体积％的二氧化碳气体，30体积％〜80体积％的氦气的三元混合气体，余量为氩气。

4. 发明申请

US20090230452A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090230452A1
公开(公告)日：2009-09-17
申请号：US12401382
申请日：2009-03-10
申请人： Makoto TAKAHASHI , Minoru ENDOU
发明人： Makoto TAKAHASHI , Minoru ENDOU
IPC分类号： H01L29/68 , H01L21/8239
CPC分类号： H01L27/11526 , H01L27/11546
摘要： A semiconductor device which has a semiconductor substrate, an isolation insulating film formed in the semiconductor substrate, a conductive pattern formed over the semiconductor substrate and the isolation insulating film, so that a side face of the conductive pattern is formed over the isolation insulating film, and an insulating film is formed over the isolation insulating film, the conductive pattern and the side face of the conductive pattern, and the side face of the conductive pattern comprises a notch.
摘要翻译：具有半导体衬底的半导体器件，形成在半导体衬底中的隔离绝缘膜，形成在半导体衬底上的导电图案和隔离绝缘膜，使得导电图案的侧面形成在隔离绝缘膜上，在隔离绝缘膜，导电图案和导电图案的侧面上形成绝缘膜，导电图案的侧面包括凹口。

5. 发明申请

US20080142864A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080142864A1
公开(公告)日：2008-06-19
申请号：US11970245
申请日：2008-01-07
申请人： Makoto TAKAHASHI , Kouichi NAGAI
发明人： Makoto TAKAHASHI , Kouichi NAGAI
IPC分类号： H01L29/94 , H01L21/20
CPC分类号： H01L27/11507 , H01L21/7685 , H01L23/53223 , H01L23/53238 , H01L24/03 , H01L24/05 , H01L27/105 , H01L27/11502 , H01L27/11509 , H01L28/55 , H01L28/65 , H01L2224/02166 , H01L2224/03 , H01L2224/05006 , H01L2224/05093 , H01L2224/05546 , H01L2224/05556 , H01L2224/0558 , H01L2224/05624 , H01L2224/05647 , H01L2224/05666 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01044 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01082 , H01L2924/05042 , H01L2924/13091 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： According to the method for manufacturing a semiconductor device, a surface of a lower insulating film (55) is planarized by CMP or the like, and an upper insulating film (56) and a protective metal film (59) are formed on the lower insulating film (55). Accordingly, the upper insulating film (56) and the protective metal film (59) are formed in such a manner they have an excellent coverage and the water/hydrogen blocking capability of the upper insulating film (56) and the protective metal film (59) is maximized.
摘要翻译：根据半导体器件的制造方法，通过CMP等对下部绝缘膜（55）的表面进行平坦化，在绝缘层的下部绝缘膜（56）上形成上绝缘膜（56）和保护金属膜（59）电影（55）。因此，上绝缘膜56和保护金属膜59形成为具有优异的覆盖度和上绝缘膜56和保护金属膜59的水/氢阻断能力）最大化。

6. 发明申请

US20100267214A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100267214A1
公开(公告)日：2010-10-21
申请号：US12785601
申请日：2010-05-24
申请人： Makoto TAKAHASHI , Kouichi NAGAI
发明人： Makoto TAKAHASHI , Kouichi NAGAI
IPC分类号： H01L21/02
CPC分类号： H01L27/11507 , H01L21/7685 , H01L23/53223 , H01L23/53238 , H01L24/03 , H01L24/05 , H01L27/105 , H01L27/11502 , H01L27/11509 , H01L28/55 , H01L28/65 , H01L2224/02166 , H01L2224/03 , H01L2224/05006 , H01L2224/05093 , H01L2224/05546 , H01L2224/05556 , H01L2224/0558 , H01L2224/05624 , H01L2224/05647 , H01L2224/05666 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01044 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01082 , H01L2924/05042 , H01L2924/13091 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： According to the method for manufacturing a semiconductor device, a surface of a lower, insulating film (55) is planarized by CMP or the like, and an upper insulating film (56) and a protective metal film (59) are formed on the lower insulating film (55). Accordingly, the upper insulating film (56) and the protective metal film (59) are formed in such a manner they have an excellent coverage and the water/hydrogen blocking capability of the upper insulating film (56) and the protective metal film (59) is maximized.
摘要翻译：根据半导体器件的制造方法，通过CMP等对下部绝缘膜（55）的表面进行平面化，在下部绝缘膜（56）和下部绝缘膜（56）上形成上部绝缘膜（56）和保护用金属膜绝缘膜（55）。因此，上绝缘膜56和保护金属膜59形成为具有优异的覆盖度和上绝缘膜56和保护金属膜59的水/氢阻断能力）最大化。

7. 发明申请

US20080099855A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080099855A1
公开(公告)日：2008-05-01
申请号：US11969019
申请日：2008-01-03
申请人： Kouichi NAGAI , Katsuhiro SATO , Kaoru SUGAWARA , Makoto TAKAHASHI , Masahito KUDOU , Kazuhiro ASAI , Yukimasa MIYAZAKI , Kaoru SAIGOH
发明人： Kouichi NAGAI , Katsuhiro SATO , Kaoru SUGAWARA , Makoto TAKAHASHI , Masahito KUDOU , Kazuhiro ASAI , Yukimasa MIYAZAKI , Kaoru SAIGOH
IPC分类号： H01L29/94 , H01L29/76 , H01L31/00 , H01L21/44
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57 , H01L28/65 , H01L2924/0002 , H01L2924/00
摘要： A protective film (56) having a water/hydrogen blocking function is formed so as to cover the periphery of a pad electrode (54a) while being electrically isolated from the pad electrode. A material selected in the embodiment for composing the protective film is a highly moisture-proof material having a water/hydrogen blocking function considerably superior to that of the insulating material, such as palladium (Pd) or palladium-containing material, and iridium (Ir) or iridium oxide (IrOx: typically x=2) or an iridium- or iridium oxide-containing material. An FeRAM capable of reliably preventing water/hydrogen from entering inside, and of maintaining high performance of the ferroelectric capacitor structure (30) may be realized only by a simple configuration.
摘要翻译：形成具有水/氢阻断功能的保护膜（56），以便在与焊盘电极电隔离的同时覆盖焊盘电极（54a）的外围。用于构成保护膜的实施方案中选择的材料是具有显着优于绝缘材料（例如钯（Pd）或含钯材料）和铱（Ir）的防氢/阻氢功能的高度防潮材料）或氧化铱（IrO x x：通常为x = 2）或含铱或氧化铱的材料。可以通过简单的结构来实现能够可靠地防止水/氢进入内部并且保持铁电电容器结构（30）的高性能的FeRAM。

8. 发明申请

US20120180727A1 FILM FORMING APPARATUS 有权
标题翻译：电影制作装置
公开(公告)号：US20120180727A1
公开(公告)日：2012-07-19
申请号：US13333137
申请日：2011-12-21
申请人： Harunari HASEGAWA , Kippei SUGITA , Atsushi ANDO , Yoshiki FUKUHARA , Makoto TAKAHASHI
发明人： Harunari HASEGAWA , Kippei SUGITA , Atsushi ANDO , Yoshiki FUKUHARA , Makoto TAKAHASHI
IPC分类号： C23C16/458
CPC分类号： C23C16/45578 , C23C16/455 , C23C16/45563 , C23C16/45576 , C23C16/458 , C23C16/4584 , C23C16/52
摘要： Provided is a film forming apparatus for forming a film on a substrate maintained within a film forming container by supplying a raw material gas to the substrate. The film forming container includes a substrate maintaining unit, a supply mechanism configured to include a supply pipe with supply holes formed thereon to supply a raw material gas to the interior of the film forming container through the supply holes, an exhaust mechanism configured to include an exhaust pipe with exhaust holes formed thereon to exhaust gas from the interior of the film forming container through the exhaust holes, and a controller configured to control the substrate maintaining unit, the supply mechanism, and the exhaust mechanism. The supply holes and the exhaust holes are formed to face each other with the substrate maintained in the substrate maintaining unit interposed therebetween.
摘要翻译：本发明提供一种成膜装置，其通过向基板供给原料气体而在保持在成膜容器内的基板上形成膜。成膜容器包括基板保持单元，供给机构，其构造成包括供给管，其上形成有供给孔，供给孔通过供给孔向成膜容器的内部供给原料气体;排气机构，排气管，其上形成有排气孔，以通过排气孔从成膜容器的内部排出气体;以及控制器，被配置为控制基板保持单元，供给机构和排气机构。供给孔和排气孔形成为彼此面对，并且基板保持在基板保持单元之间。

9. 发明申请

US20110079624A1 COMBUSTION POWER TOOL 有权
标题翻译：燃烧电动工具
公开(公告)号：US20110079624A1
公开(公告)日：2011-04-07
申请号：US12896320
申请日：2010-10-01
申请人： Norio OIWA , Yoichiro KOIKE , Makoto TAKAHASHI , Kenichi MIYATA
发明人： Norio OIWA , Yoichiro KOIKE , Makoto TAKAHASHI , Kenichi MIYATA
IPC分类号： B25C1/08
CPC分类号： B25C1/08
摘要： A technique for improving the cooling performance of a combustion chamber in a combustion power tool is provided. The combustion power tool includes first and second combustion chambers, a partition that separates the first combustion chamber from the second combustion chamber, openings, formed in the partition and communicate the first combustion chamber with the second combustion chamber, and a drive section that moves toward a front end by combustion pressure. The combustion pressure is generated when a flow of flammable gas, which is produced by combustion of the flammable gas in the first combustion chamber propagates to the second combustion chamber through the openings, and burns flammable gas in the second combustion chamber. The combustion gas flows from the first combustion chamber to the second combustion chamber in a direction around a central axis of the second combustion chamber while flowing along an inner wall of the second combustion chamber.
摘要翻译：提供了一种用于提高燃烧动力工具中的燃烧室的冷却性能的技术。燃烧动力工具包括第一和第二燃烧室，将第一燃烧室与第二燃烧室分隔开的隔板，形成在隔板中的开口，并将第一燃烧室与第二燃烧室连通;以及驱动部分，前端由燃烧压力。当通过第一燃烧室中的可燃性气体的燃烧产生的可燃气体的流动通过开口传播到第二燃烧室并且燃烧第二燃烧室中的可燃气体时，产生燃烧压力。燃烧气体沿着第二燃烧室的内壁沿着第二燃烧室的中心轴线的方向从第一燃烧室流向第二燃烧室。

10. 发明申请

US20100177153A1 STAGE APPARATUS 有权
标题翻译：阶段装置
公开(公告)号：US20100177153A1
公开(公告)日：2010-07-15
申请号：US12712579
申请日：2010-02-25
申请人： Yasuzo TANAKA , Junpei YUYAMA , Mitsuru YAHAGI , Hirofumi MINAMI , Makoto TAKAHASHI , Shinya ITO
发明人： Yasuzo TANAKA , Junpei YUYAMA , Mitsuru YAHAGI , Hirofumi MINAMI , Makoto TAKAHASHI , Shinya ITO
IPC分类号： B41J2/01
CPC分类号： B65H1/00 , B41J11/06 , B65H2405/312 , B65H2701/11312 , B65H2801/15
摘要： A stage apparatus that achieves a high accuracy in assembling and enables easy work at a real installation site. In a stage apparatus of the present invention, sub rails are arranged on respective sub base plates, which are connected respectively with the first and second main rails on a main base plate to extend the first and second main rails. Accordingly, when the sub base plates are fixed to the main base plate 11 with positional alignment performed therebetween, the accuracy in positional alignment of the sub base plates which has already been fixed to the main base plate is not affected.
摘要翻译：一种在组装中实现高精度并能够在真实安装现场方便工作的平台装置。在本发明的舞台装置中，副导轨布置在相应的副底板上，它们分别与主底板上的第一和第二主导轨连接以延伸第一和第二主导轨。因此，当子基板在其间进行位置对准而固定到主基板11上时，已经固定到主底板的副基板的位置对准精度不受影响。

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