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1. 发明申请

US20080285182A1 ENHANCED ANTI-PARALLEL-PINNED SENSOR USING THIN RUTHENIUM SPACER AND HIGH MAGNETIC FIELD ANNEALING 有权
标题翻译：使用薄型间隔器和高磁场退火的增强型抗并联型传感器
公开(公告)号：US20080285182A1
公开(公告)日：2008-11-20
申请号：US12172134
申请日：2008-07-11
申请人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
发明人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , H01L43/12 , Y10T428/1121
摘要： An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.
摘要翻译：反平行销钉式传感器设置有增加传感器的反平行耦合强度的间隔件。反平行钉扎传感器是具有纯钌或钌合金间隔物的GMR或TMR传感器。间隔物的厚度小于0.8nm，优选在0.1和0.6nm之间。间隔物也在1.5特斯拉或更高，优选大于5特斯拉的磁场中退火。该设计通过将钉扎场超过使用0.8nm厚的钌间隔物并且在约1.3特斯拉的相对低的磁场中退火的典型AP钉扎GMR和TMR传感器的三倍以上而产生意想不到的结果。

2. 发明授权

US07848064B2 Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing 有权
标题翻译：增强型反并联固定传感器采用薄钌间隔和高磁场退火
公开(公告)号：US07848064B2
公开(公告)日：2010-12-07
申请号：US12172134
申请日：2008-07-11
申请人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
发明人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , H01L43/12 , Y10T428/1121
摘要： An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.
摘要翻译：反平行销钉式传感器设置有增加传感器的反平行耦合强度的间隔件。反平行钉扎传感器是具有纯钌或钌合金间隔物的GMR或TMR传感器。间隔物的厚度小于0.8nm，优选在0.1和0.6nm之间。间隔物也在1.5特斯拉或更高，优选大于5特斯拉的磁场中退火。该设计通过将钉扎场超过使用0.8nm厚的钌间隔物并且在约1.3特斯拉的相对低的磁场中退火的典型AP钉扎GMR和TMR传感器的三倍以上而产生意想不到的结果。

3. 发明授权

US07408747B2 Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing 失效
标题翻译：增强型反并联固定传感器采用薄钌间隔和高磁场退火
公开(公告)号：US07408747B2
公开(公告)日：2008-08-05
申请号：US11048406
申请日：2005-02-01
申请人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
发明人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , H01L43/12 , Y10T428/1121
摘要： An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.
摘要翻译：反平行销钉式传感器设置有增加传感器的反平行耦合强度的间隔件。反平行钉扎传感器是具有纯钌或钌合金间隔物的GMR或TMR传感器。间隔物的厚度小于0.8nm，优选在0.1和0.6nm之间。间隔物也在1.5特斯拉或更高，优选大于5特斯拉的磁场中退火。该设计通过将钉扎场超过使用0.8nm厚的钌间隔物并且在约1.3特斯拉的相对低的磁场中退火的典型AP钉扎GMR和TMR传感器的三倍以上而产生意想不到的结果。

4. 发明申请

US20060171083A1 Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing 失效
标题翻译：增强型反并联固定传感器采用薄钌间隔和高磁场退火
公开(公告)号：US20060171083A1
公开(公告)日：2006-08-03
申请号：US11048406
申请日：2005-02-01
申请人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
发明人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , H01L43/12 , Y10T428/1121
摘要： An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.
摘要翻译：反平行销钉式传感器设置有增加传感器的反平行耦合强度的间隔件。反平行钉扎传感器是具有纯钌或钌合金间隔物的GMR或TMR传感器。间隔物的厚度小于0.8nm，优选在0.1和0.6nm之间。间隔物也在1.5特斯拉或更高，优选大于5特斯拉的磁场中退火。该设计通过将钉扎场超过使用0.8nm厚的钌间隔物并且在约1.3特斯拉的相对低的磁场中退火的典型AP钉扎GMR和TMR传感器的三倍以上而产生意想不到的结果。

5. 发明授权

US07230803B2 Magnetic head with magnetic domain control structure having anti-ferromagnetic layer and plural magnetic layers 失效
标题翻译：具有磁畴控制结构的磁头具有反铁磁层和多个磁性层
公开(公告)号：US07230803B2
公开(公告)日：2007-06-12
申请号：US10771312
申请日：2004-02-05
申请人： Akira Morinaga , Koichi Nishioka , Takayoshi Ohtsu , Norifumi Miyamoto , Shuichi Kojima
发明人： Akira Morinaga , Koichi Nishioka , Takayoshi Ohtsu , Norifumi Miyamoto , Shuichi Kojima
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996
摘要： A magneto-resistive effect head including: an antiferromagnetic layer; a pinned layer which is formed on the antiferromagnetic layer and whose magnetizing direction has been fixed; a spacer formed on the pinned layer; a free layer formed on the spacer; and magnetic domain control layers having antiferromagnetic flims and magnet layers for performing a magnetic domain control of the free layer; wherein the each of the antiferromagnetjc films is formed on the free layer; wherein the each of magnet layers has at least two magnetic films coupled anti-ferromagnetically through at least one nonmagnetic film; a pair of lead layers for supplying a current to the stack of layers; and wherein seed layers are formed between the antiferromagnetic films and the lead layers.
摘要翻译：磁阻效应头包括：反铁磁层; 形成在反铁磁层上并且其磁化方向已被固定的钉扎层; 形成在被钉扎层上的间隔物; 形成在间隔物上的自由层; 以及磁畴控制层，其具有用于对自由层进行磁畴控制的反铁磁性薄膜和磁铁层; 其中每个反铁磁膜形成在自由层上; 其中每个磁体层具有至少两个通过至少一个非磁性膜反铁磁耦合的磁膜; 一对用于向层叠层提供电流的引线层; 并且其中在反铁磁膜和引线层之间形成种子层。

6. 发明授权

US06717778B2 Spin-valve giant magnetoresistive head and method of manufacturing the same 失效
标题翻译：旋转阀巨磁阻头及其制造方法
公开(公告)号：US06717778B2
公开(公告)日：2004-04-06
申请号：US09931255
申请日：2001-08-17
申请人： Masatoshi Arasawa , Haruko Tanaka , Makoto Morijiri , Koichi Nishioka , Shuichi Kojima , Masayasu Kagawa
发明人： Masatoshi Arasawa , Haruko Tanaka , Makoto Morijiri , Koichi Nishioka , Shuichi Kojima , Masayasu Kagawa
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3166 , G11B5/3903 , G11B5/3906 , G11B5/398 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Multiple thin films of spin-valve GMR sensor are formed in a trapezoidal cross-sectional shape by laminating an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer and a nonmagnetic protective layer on a lower insulated gap layer. The amount of etching of the lower insulated gap layer produced in the process of patterning the spin-valve giant magnetoresistive layers into the multiple thin films of spin-valve GMR sensor is 10 nm or less. Further, the angle &thgr; which the tangent line of each side face of the multiple thin films to the middle line of the free magnetic layer in its thickness direction forms with respect to the middle line of the free magnetic layer becomes 45 degrees or more. This structure makes it possible to provide such a spin-valve giant magnetoresistive head that it meets the requirements for securing constant breakdown voltage and preventing instability of MR output voltage waveform.
摘要翻译：通过在下绝缘间隙层上层叠反铁磁层，钉扎磁性层，非磁性导电层，自由磁性层和非磁性保护层，形成梯形截面形状的多个自旋阀GMR传感器薄膜。在将自旋阀巨磁阻层图案化成自旋阀GMR传感器的多个薄膜的过程中产生的下绝缘间隙层的蚀刻量为10nm以下。此外，相对于自由磁性层的中间线，多个薄膜的每个侧面的切线与自由磁性层的中间线在其厚度方向上形成的角度θ成为45度以上。这种结构使得可以提供这样的自旋阀巨磁阻头，其满足确保恒定击穿电压的要求并防止MR输出电压波形的不稳定性。

7. 发明授权

US06319622B1 Magnetic head 有权
标题翻译：磁头
公开(公告)号：US06319622B1
公开(公告)日：2001-11-20
申请号：US09633170
申请日：2000-08-04
申请人： Satoshi Shigematsu , Takao Imagawa , Koichi Nishioka , Hiroshi Kamio , Katsuhisa Usami
发明人： Satoshi Shigematsu , Takao Imagawa , Koichi Nishioka , Hiroshi Kamio , Katsuhisa Usami
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3903 , G11B2005/3996 , Y10S428/90 , Y10T428/1121 , Y10T428/115 , Y10T428/1193
摘要： Magnetoresistive and spin valve heads have a layered structure. Common to each of the layered structures of these heads is the combination of a soft-magnetic layer of essentially NiFe near a spacer layer of essentially Ta, which is used for insuring (111) crystal orientation of the NiFe layer. An isolate layer is interposed between the spacer layer and the soft-magnetic layer to prevent a diffusion boundary from being created at the interface of these layers which tends to degrade the soft-magnetic property of the NiFe layer, especially when the thickness of the soft-magnetic layer is 10 and nm or less. The isolate layer is one of a composition in which the principal component is a magnetic element that is not solid soluble with Ta, a composition in which the principal component is a non-magnetic element that is not solid soluble with Ni and Fe, a composition in which the principal component is at least one of the elements of Co, Fe, Ti, V, Zr, Nb, Mo, Hf, W, Tc, Ru, Rh, Pd, Ag, Re, Os, Ir, Pt and Au; or a composition in which the principal component is of Co(100−X)Fe(X), where 20≧X>O. The isolate layer has a structure that is amorphous, an fcc structure.
摘要翻译：磁阻和旋转阀头具有分层结构。这些磁头的每个层状结构的共同之处在于用于确保NiFe层的（111）晶体取向的基本上Ta的间隔层附近的基本上NiFe的软磁性层的组合。在间隔层和软磁性层之间插入隔离层，以防止在这些层的界面处产生扩散边界，这倾向于降低NiFe层的软磁特性，特别是当软质的厚度磁性层为10nm以下。隔离层是其中主要成分是与Ta不固溶的磁性元素的组合物之一，其中主要成分是不与Ni和Fe固溶的非磁性元素的组成，组成其中主要成分是Co，Fe，Ti，V，Zr，Nb，Mo，Hf，W，Tc，Ru，Rh，Pd，Ag，Re，Os，Ir，Pt和Au中的至少一种元素 ; 或其中主成分为Co（100-X）Fe（X）的组合物，其中20> = X> O。隔离层具有无定形，fcc结构的结构。

8. 发明申请

US20110141613A1 TUNNELING MAGNETORESISTANCE READ HEAD HAVING A COFE INTERFACE LAYER AND METHODS FOR PRODUCING THE SAME 有权
标题翻译：带有接合层的隧道磁阻读取头及其制造方法
公开(公告)号：US20110141613A1
公开(公告)日：2011-06-16
申请号：US12948072
申请日：2010-11-17
申请人： Koji Sakamoto , Koichi Nishioka
发明人： Koji Sakamoto , Koichi Nishioka
IPC分类号： G11B5/33 , G11B21/02 , B05D5/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3163 , G11B5/3906 , H01F10/132 , H01F10/3254 , H01F10/3272 , H01F41/307 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/49034
摘要： According to one embodiment, a method for producing a Tunneling Magnetoresistance (TMR) read head includes forming a fixed layer, forming an insulating barrier layer above the fixed layer, forming a free layer above the insulating barrier layer, and annealing the free layer, the fixed layer, and the insulating barrier layer. The fixed layer includes a first ferromagnetic layer having a CoxFe (0≦x≦15) interface layer and a Co-based amorphous metallic layer between the CoxFe interface layer and the insulating barrier layer, an antiparallel coupling layer below the first ferromagnetic layer, and a second ferromagnetic layer below the antiparallel coupling layer. In another embodiment, a TMR read head includes the layers described above, and may be included in a magnetic data storage system.
摘要翻译：根据一个实施例，一种用于制造隧道磁阻（TMR）读头的方法包括形成固定层，在固定层上形成绝缘阻挡层，在绝缘阻挡层上方形成自由层，退火自由层，固定层和绝缘阻挡层。该固定层包括具有CoxFe（0＆amp; nlE; x＆nlE; 15）界面层的第一铁磁层和在CoxFe界面层和绝缘阻挡层之间的Co基非晶金属层，在第一铁磁层下面的反向平行耦合层，以及位于反平行耦合层下面的第二铁磁层。在另一个实施例中，TMR读取头包括上述层，并且可以包括在磁数据存储系统中。

9. 发明申请

US20110141606A1 TUNNELING JUNCTION MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING METHOD THEREOF 有权
标题翻译：隧道结电磁效应元件及其制造方法
公开(公告)号：US20110141606A1
公开(公告)日：2011-06-16
申请号：US12955746
申请日：2010-11-29
申请人： Koichi Nishioka , Koji Sakamoto , Tatsumi Hirano
发明人： Koichi Nishioka , Koji Sakamoto , Tatsumi Hirano
IPC分类号： G11B15/18 , G11B5/39 , B05D5/12
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01F41/18 , H01F41/307 , H01L43/08 , H01L43/12 , Y10T428/1114
摘要： According to one embodiment, a TMR effect element includes a ground layer, an antiferromagnetic layer above the ground layer, a first ferromagnetic layer above the antiferromagnetic layer and exchange-coupled to the antiferromagnetic layer, an anti-parallel coupling layer above the first ferromagnetic layer, a second ferromagnetic layer having a magnetic moment coupled anti-parallel to the magnetic moment of the first ferromagnetic layer via the anti-parallel coupling layer, an insulation barrier layer above the second ferromagnetic layer, and a third ferromagnetic layer above the insulation barrier layer. At least a portion of the second ferromagnetic layer and at least a portion of the third ferromagnetic layer on an insulation barrier layer side are comprised of a crystal, and the insulation barrier layer comprises MgO and an oxide material having an independent cubic crystal structure and complete solid solubility with MgO. Other elements, heads, and formation methods are described according to various embodiments.
摘要翻译：根据一个实施例，TMR效应元件包括接地层，接地层上方的反铁磁层，反铁磁层上方的第一铁磁层并与反铁磁层交换耦合，第一铁磁层上方的反平行耦合层具有经由所述反平行耦合层反平行于所述第一铁磁层的磁矩而耦合的磁矩的第二铁磁层，所述第二铁磁层上方的绝缘阻挡层和所述绝缘阻挡层上方的第三铁磁层。第二铁磁层的至少一部分和绝缘阻挡层侧上的第三铁磁层的至少一部分由晶体构成，绝缘阻挡层包括MgO和具有独立立方晶体结构的氧化物材料与MgO的固溶度。根据各种实施例描述其它元件，头和形成方法。

10. 发明授权

US07623323B2 Magnetoresistive head and read/write separation-type magnetic head 失效
标题翻译：磁阻头和读/写分离型磁头
公开(公告)号：US07623323B2
公开(公告)日：2009-11-24
申请号：US11227677
申请日：2005-09-14
申请人： Koichi Nishioka , Shuichi Kojima , Koji Kataoka , Takayoshi Ohtsu
发明人： Koichi Nishioka , Shuichi Kojima , Koji Kataoka , Takayoshi Ohtsu
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3929 , G11B2005/3996
摘要： Embodiments of the invention provide a reading head structure that ensures a stable magnetic moment of a pinned layer against a great external magnetic field, and minimizes the pinned-layer damage occurring during air-bearing surface machining. In one embodiment, a magnetoresistive head is based on a spin-valve effect and has free layers, a stacked-type pinned layer, and an electroconductive nonmagnetic spacer layer positioned between the free layers and the stacked-type pinned layer. The stacked-type pinned layer includes three ferromagnetic films, and antiferromagnetic coupling films interposed between the ferromagnetic films. Of these ferromagnetic films, the first two films have a high coercivity and a high resistivity. The third ferromagnetic film is made of a material that gives a great magnetoresistive effect. The sum of the magnetic moments generated from the stacked-type pinned layer is substantially zero.
摘要翻译：本发明的实施例提供了一种读取头结构，其确保针对大的外部磁场的被钉扎层的稳定的磁矩，并且使在空气轴承表面加工期间发生的钉扎层损伤最小化。在一个实施例中，磁阻头基于自旋阀效应，并且具有自由层，层叠型钉扎层和位于自由层和堆叠型钉扎层之间的导电非磁性间隔层。堆叠型钉扎层包括三个铁磁膜和介于铁磁膜之间的反铁磁耦合膜。在这些铁磁膜中，前两个膜具有高矫顽力和高电阻率。第三铁磁膜由具有很大磁阻效应的材料制成。从堆叠型钉扎层产生的磁矩的总和基本为零。

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