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1. 发明授权

US6120919A Magnetic head 失效
标题翻译：磁头
公开(公告)号：US6120919A
公开(公告)日：2000-09-19
申请号：US114946
申请日：1998-07-14
申请人： Satoshi Shigematsu , Takao Imagawa , Koichi Nishioka , Hiroshi Kamio , Katsuhisa Usami
发明人： Satoshi Shigematsu , Takao Imagawa , Koichi Nishioka , Hiroshi Kamio , Katsuhisa Usami
IPC分类号： G11B5/012 , G11B5/39 , G11B5/66
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3903 , G11B2005/3996 , Y10S428/90 , Y10T428/1121 , Y10T428/115 , Y10T428/1193
摘要： Magnetoresistive and spin valve heads have a layered structure. Common to each of the layered structures of these heads is the combination of a soft-magnetic layer of essentially NiFe near a spacer layer of essentially Ta, which is used for insuring (111) crystal orientation of the NiFe layer. An isolate layer is interposed between the spacer layer and the soft-magnetic layer to prevent a diffusion boundary from being created at the interface of these layers which tends to degrade the soft-magnetic property of the NiFe layer, especially when the thickness of the soft-magnetic layer is 10 and nm or less. The isolate layer is one of a composition in which the principal component is a magnetic element that is not solid soluble with Ta, a composition in which the principal component is a non-magnetic element that is not solid soluble with Ni and Fe, a composition in which the principal component is at least one of the elements of Co, Fe, Ti, V, Zr, Nb, Mo, Hf, W, Tc, Ru, Rh, Pd, Ag, Re, Os, Ir, Pt and Au; or a composition in which the principal component is of Co.sub.(100-x) Fe.sub.(x), where 20.gtoreq.X>O. The isolate layer has a structure that is amorphous, an fcc structure.
摘要翻译：磁阻和旋转阀头具有分层结构。这些磁头的每个层状结构的共同之处在于用于确保NiFe层的（111）晶体取向的基本上Ta的间隔层附近的基本上NiFe的软磁性层的组合。在间隔层和软磁性层之间插入隔离层，以防止在这些层的界面处产生扩散边界，这倾向于降低NiFe层的软磁特性，特别是当软质的厚度磁性层为10nm以下。隔离层是其中主要成分是与Ta不固溶的磁性元素的组合物之一，其中主要成分是不与Ni和Fe固溶的非磁性元素的组成，组成其中主要成分是Co，Fe，Ti，V，Zr，Nb，Mo，Hf，W，Tc，Ru，Rh，Pd，Ag，Re，Os，Ir，Pt和Au中的至少一种元素 ; 或其中主成分为Co（100-x）Fe（x）的组合物，其中20> = X> O。隔离层具有无定形，fcc结构的结构。

2. 发明授权

US06319622B1 Magnetic head 有权
标题翻译：磁头
公开(公告)号：US06319622B1
公开(公告)日：2001-11-20
申请号：US09633170
申请日：2000-08-04
申请人： Satoshi Shigematsu , Takao Imagawa , Koichi Nishioka , Hiroshi Kamio , Katsuhisa Usami
发明人： Satoshi Shigematsu , Takao Imagawa , Koichi Nishioka , Hiroshi Kamio , Katsuhisa Usami
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3903 , G11B2005/3996 , Y10S428/90 , Y10T428/1121 , Y10T428/115 , Y10T428/1193
摘要： Magnetoresistive and spin valve heads have a layered structure. Common to each of the layered structures of these heads is the combination of a soft-magnetic layer of essentially NiFe near a spacer layer of essentially Ta, which is used for insuring (111) crystal orientation of the NiFe layer. An isolate layer is interposed between the spacer layer and the soft-magnetic layer to prevent a diffusion boundary from being created at the interface of these layers which tends to degrade the soft-magnetic property of the NiFe layer, especially when the thickness of the soft-magnetic layer is 10 and nm or less. The isolate layer is one of a composition in which the principal component is a magnetic element that is not solid soluble with Ta, a composition in which the principal component is a non-magnetic element that is not solid soluble with Ni and Fe, a composition in which the principal component is at least one of the elements of Co, Fe, Ti, V, Zr, Nb, Mo, Hf, W, Tc, Ru, Rh, Pd, Ag, Re, Os, Ir, Pt and Au; or a composition in which the principal component is of Co(100−X)Fe(X), where 20≧X>O. The isolate layer has a structure that is amorphous, an fcc structure.
摘要翻译：磁阻和旋转阀头具有分层结构。这些磁头的每个层状结构的共同之处在于用于确保NiFe层的（111）晶体取向的基本上Ta的间隔层附近的基本上NiFe的软磁性层的组合。在间隔层和软磁性层之间插入隔离层，以防止在这些层的界面处产生扩散边界，这倾向于降低NiFe层的软磁特性，特别是当软质的厚度磁性层为10nm以下。隔离层是其中主要成分是与Ta不固溶的磁性元素的组合物之一，其中主要成分是不与Ni和Fe固溶的非磁性元素的组成，组成其中主要成分是Co，Fe，Ti，V，Zr，Nb，Mo，Hf，W，Tc，Ru，Rh，Pd，Ag，Re，Os，Ir，Pt和Au中的至少一种元素 ; 或其中主成分为Co（100-X）Fe（X）的组合物，其中20> = X> O。隔离层具有无定形，fcc结构的结构。

3. 发明授权

US4135088A Charged-particle analyzer 失效
标题翻译：充电粒子分析仪
公开(公告)号：US4135088A
公开(公告)日：1979-01-16
申请号：US810970
申请日：1977-06-28
申请人： Isao Ishikawa , Michiyasu Itoh , Katsuhisa Usami
发明人： Isao Ishikawa , Michiyasu Itoh , Katsuhisa Usami
IPC分类号： G01N23/227 , G01N23/225 , G05B7/02 , H01J49/44 , H01J49/48 , H01J39/00
CPC分类号： G01N23/225 , H01J49/482 , H01J2237/05
摘要： A charged-particle beam correction arrangement for a charged-particle analyzer having deflecting electrodes which focus charged particles emitted from a sample onto a center axis, an extension thereof, or onto an identical circumference with its center on the axis, a slit which is disposed at the focus point, and an energy analyzer whose object point lies at the focus point. The charged-particle beam correction arrangement is disposed axially symmetrically in the vicinity of the path of the charged particles between the sample and the slit to correct a deformation in the focusing of the charged-particle beam. BACKGROUND OF THE INVENTIONThe present invention relates to a charged-particle analyzer.For the analysis of a feeble electron beam of low energy, such as Auger electrons and photoelectrons in the surface analysis, it is important to efficiently utilize the electrons emitted from a sample. Accordingly, it is necessary that the accepted solid angle (= the solid angle of electron rays entering an analyzing system/the entire solid angle of electron rays emitted from a sample) be wide.As an optimum structure based on such requirement, an analyzing equipment shown in FIG. 1 has been proposed (Japanese Patent Application No. 12283/76). The feature of this equipment is that a deflecting system consisting of two inner and outer electrodes is arranged axially symmetrically around a sample and that signals emitted from the sample and entering the deflecting system are caused to depict a greatly curved track, whereupon they are focused on the center axis of the equipment or a circumference with its center on the axis again. Further, at a stage succeeding the deflecting system, an analyzing system is arranged in such electrooptical relation that the point of the above focusing is considered as the emission point of the signals. Thus, an energy analysis of photo-electrons, Auger electrons, etc. is carried out.FIG. 1 is a constructional view showing the prior art equipment described above including an electron gun. An electron beam 2 produced from the electron gun is focused by a focusing lens 3, and irradiates a sample 4. Charged particles 5, such as Auger electrons, are emitted from the irradiated point P of the sample 4 in substantially the COS-Law spacial distribution. Among the charged particles, rays of electrons are surrounded by two cones whose vertexes are the point P and whose half vertical angles are .theta. + a and .theta. - a, which rays enter between deflecting electrodes 6 and 7. The deflecting electrodes 6 and 7 are disposed axially symmetrically and are L-shaped in section so as to form a double electrode system.Within the deflecting electrode system, the rays of electrons depict greatly curved tracks owing to a deflecting electric field. Further, the rays of electrons have the tracks corrected by an auxiliary electrode 8 and are converged in the first order of the angle a onto a slit 9 situated at a stage succeeding the auxiliary electrode 8. After passing through the slit 9, the rays travel so as to cross on the axis of the equipment. They are subjected then to the energy analysis by a cylindrical mirror type analyzer 10 arranged after the slit 9 with only electrons having certain specific energy being converged onto a detection slit 9' which is placed on the axis, signals being detected by a detector 11 which is disposed behind the detecting slit 9'.The energy analysis of the charged particles 5 emitted from the sample becomes possible in such a way that voltages to be applied to the deflecting electrodes 6, 7, the auxiliary electrode 8, and the electrode of the cylindrical mirror type analyzer 10 are appropriately selected with divider resistances 12, 13 and 14 connected to a power source 20 and then scanned at a fixed ratio.When it is desired to have a high sensitivity of analysis utilizing the aforedescribed analyzing system, the signal obtained from the sample must of course be received at the widest possible accepted solid angle as stated above. Additionally, the loss of signal between the deflecting system and the slit must be confined to a minimum. To this end, it is necessary that the rays of electrons at the time when they pass through the slit 9 have the best possible circularity so as to reduce the amount to which the rays are intercepted by the end face of the slit 9.In this respect, a glass plate coated with a phosphor was placed at the position of the slit 9 in the aforedescribed equipment, and the shape of the rays of electrons focused on this point was directly observed. It was determined that the rays of electrons were not truly circular, but rather often presented a ring shape deformed in one direction or a shape having a long tail at a certain part.The cause therefor was studied, and has been revealed to be a kind of electrooptical astigmatism attributed to the fact that the electrodes were not fixed coaxially or that the parallelism of each electrode was not maintained. Therefore, in constructing the equipment, careful attention was pair to the finish precision of the electrodes and the assembling was carefully executed. While considerable improvements were thus effected, it has been determined that a satisfactory result has not been attained.SUMMARY OF THE INVENTIONAn object of the present invention is to provide an improved charged-particle analyzer.Another object of the present invention is to provide a charged-particle analyzer which makes it possible to set a wide accepted solid angle for signals and to attach a sample of large area without greatly decreasing the accepted solid angle.These and other objects are attained by a charged-particle analyzer having an irradiation device for irradiating a sample with a primary beam, a deflecting electrode system for focusing charged particles emitted from the sample onto the center axis of the primary beam or an extension thereof or onto an identical circumference with its center located on the axis or the extension, a slit which is disposed at the focus point of the charged particles, an energy analyzing system whose object point lies at the focus point, a detector for detecting the charged particles analyzed by the energy analyzing system, and a charged-particle beam correction arrangement disposed axially symmetrically in the vicinity of the path of the charged particles between the sample and the slit.

4. 发明授权

US4365264A Semiconductor device with high density low temperature deposited Si.sub.w N.sub.x H.sub.y O.sub.z passivating layer 失效
标题翻译：具有高密度低温沉积SiWNxHyOz钝化层的半导体器件
公开(公告)号：US4365264A
公开(公告)日：1982-12-21
申请号：US265167
申请日：1981-05-19
申请人： Kiichiro Mukai , Seiki Harada , Shin-ichi Muramatsu , Atsushi Hiraiwa , Shigeru Takahashi , Katsuhisa Usami , Seiichi Iwata , Satoru Ito , Takeo Yoshimi
发明人： Kiichiro Mukai , Seiki Harada , Shin-ichi Muramatsu , Atsushi Hiraiwa , Shigeru Takahashi , Katsuhisa Usami , Seiichi Iwata , Satoru Ito , Takeo Yoshimi
IPC分类号： H01L21/768 , H01L21/312 , H01L21/316 , H01L21/318 , H01L23/29 , H01L23/31 , H01L23/522 , H01L29/34
CPC分类号： H01L21/316 , H01L21/312 , H01L21/3185 , H01L23/291 , H01L24/05 , H01L2924/12044 , H01L2924/181
摘要： A semiconductor device has a passivation layer disposed on a semiconductor body having at least one circuit element therein. This layer is made of a silicon nitride material containing 0.8-5.9 weight-% of H, together with 61-70 weight-% of Si, 25-37 weight-% of N and up to 0.6 weight-% of O and has a density of 2.9-3.05 gr/cm.sup.3.
摘要翻译：半导体器件具有设置在其中具有至少一个电路元件的半导体本体上的钝化层。该层由含有0.8-5.9重量％的H，以及61-70重量％的Si，25-37重量％的N和至多0.6重量％的O的氮化硅材料制成，并且具有密度2.9-3.05gr / cm3。

5. 发明授权

US5898177A Electron microscope 失效
标题翻译：电子显微镜
公开(公告)号：US5898177A
公开(公告)日：1999-04-27
申请号：US900001
申请日：1997-07-24
申请人： Kishio Hidaka , Takeo Kamino , Toshie Yaguchi , Katsuhisa Usami , Takashi Aoyama , Shigeyoshi Nakamura , Ryo Hiraga , Masahiro Tomita
发明人： Kishio Hidaka , Takeo Kamino , Toshie Yaguchi , Katsuhisa Usami , Takashi Aoyama , Shigeyoshi Nakamura , Ryo Hiraga , Masahiro Tomita
IPC分类号： H01J37/20
CPC分类号： H01J37/20 , H01J2237/2001
摘要： A method of operating an electron microscope under a high temperature and the electron microscope are provided. The electron microscope can stably set and efficiently heat a sample to observe and measure high temperature physical properties such as phase transformation, phase transition and the like required for development of a heat resistant material. In the method of operating the electron microscope and the electron microscope, a sample to be observed is set so as to position at a central hole of a double spiral flat filament, the detachable heating stage is fixed to the heating holder using screws of a pivot, and the heating stage is tilted by vertical movement of a crank-shaped arm. The heating stage and the arm are insulated from each other by an insulating body, and current from a power source is conducted by a conductor wire to heat the filament.
摘要翻译：提供了一种在高温和电子显微镜下操作电子显微镜的方法。电子显微镜可以稳定地设定和有效地加热样品，以观察和测量耐热材料显影所需的相变，相变等高温物理性能。在操作电子显微镜和电子显微镜的方法中，将待观察的样品设置为位于双螺旋扁平细丝的中心孔处，可拆卸加热台使用枢轴的螺钉固定到加热支架并且通过曲柄形臂的垂直运动使加热台倾斜。加热台和臂通过绝缘体彼此绝缘，并且来自电源的电流通过导线传导以加热灯丝。

6. 发明授权

US5294811A Thin film semiconductor device having inverted stagger structure, and device having such semiconductor device 失效
标题翻译：具有反交错结构的薄膜半导体器件，以及具有这种半导体器件的器件
公开(公告)号：US5294811A
公开(公告)日：1994-03-15
申请号：US801350
申请日：1991-12-02
申请人： Takashi Aoyama , Kazuhiro Ogawa , Yasuhiro Mochizuki , Naohiro Momma , Katsuhisa Usami
发明人： Takashi Aoyama , Kazuhiro Ogawa , Yasuhiro Mochizuki , Naohiro Momma , Katsuhisa Usami
IPC分类号： H01L27/12 , H01L29/45 , H01L29/786 , H01L29/04 , H01L27/01 , H01L31/036
CPC分类号： H01L27/12 , H01L29/458 , H01L29/78669 , H01L29/78678
摘要： TFTs with an inverted stagger structure are fabricated according to the invention as follows; a glass substrate after depositing amorphous silicon (a-Si) thereupon is transferred to a laser annealing chamber which is kept in non-oxidation ambient and provided with a sample holder and a substrate heating mechanism. The substrate is fixed on the sample holder, then subjected to laser annealing while being heated from the glass substrate side, thereby growing polycrystalline silicon having substantially improved crystallinity, on which a-Si is further deposited. According to this process of the invention, it is capable of forming TFTs having a higher mobility and a smaller leakage current in the periphery of the substrate, with addition of almost no changes to the process and device structures of conventional TFTs which constitute pixels, and even more the peripheral drive circuitry is capable of being integrated in the display substrate.
摘要翻译：根据本发明如下制造具有反交错结构的TFT：将沉积非晶硅（a-Si）后的玻璃基板转移到保持在非氧化环境中的激光退火室，并且设置有样品保持器和基板加热机构。将基板固定在样品保持器上，然后在从玻璃基板侧加热的同时进行激光退火，从而生长出具有显着改善的结晶度的多晶硅，其中进一步沉积a-Si。根据本发明的这个方法，能够在衬底周围形成具有较高迁移率和较小漏电流的TFT，并且几乎不改变构成像素的传统TFT的工艺和器件结构，以及外围驱动电路甚至能够集成在显示基板中。

7. 发明授权

US4561891A Powdery silicon carbide composition for sintering 失效
标题翻译：粉状碳化硅组合物用于烧结
公开(公告)号：US4561891A
公开(公告)日：1985-12-31
申请号：US538816
申请日：1983-10-05
申请人： Kunihiro Maeda , Katsuhisa Usami , Yukio Takeda , Satoru Ogihara , Osamu Asai
发明人： Kunihiro Maeda , Katsuhisa Usami , Yukio Takeda , Satoru Ogihara , Osamu Asai
IPC分类号： C04B35/565 , C04B35/575 , H01B3/12 , H01L23/15 , H05K1/03 , C04B35/56 , C22C29/00
CPC分类号： C04B35/575 , H01B3/12 , H01L23/15 , H01L2924/0002 , H05K1/0306
摘要： A sintered silicon carbide body having a high thermal conductivity and a high electrical insulation without any drop substantially throughout the sintered body is produced from a powdery silicon carbide composition comprising at least 90% by weight of silicon carbide powders having an average particle size of not more than 10 .mu.m and 0.01 to 4% by weight of powders of beryllium or its compound having a particle size of not more than 30 .mu.m in terms of beryllium atom, a nitrogen content of the composition being not more than 500 ppm.
摘要翻译：具有高导热性和高电绝缘性的烧结碳化硅本体由基本上遍及整个烧结体的任何液滴产生，该粉末状碳化硅组合物包含至少90重量％的平均粒度不大于的碳化硅粉末 10重量％以上，0.01〜4重量％的铍粉末或其化合物的粒径不超过30微米，铍原子的含量不超过500ppm。

8. 发明授权

US4126782A Electrostatic charged-particle analyzer 失效
标题翻译：静电带电粒子分析仪
公开(公告)号：US4126782A
公开(公告)日：1978-11-21
申请号：US762719
申请日：1977-01-26
申请人： Katsuhisa Usami , Isao Ishikawa
发明人： Katsuhisa Usami , Isao Ishikawa
IPC分类号： G01Q30/02 , G01Q60/00 , H01J49/48 , H01J39/00
CPC分类号： H01J49/482
摘要： An electrostatic charged-particle analyzer includes a deflecting electrode system which focuses charged particles emitted from a sample by irradiating the sample with a primary beam, the particles being focused on the axis of the primary beam or on an identical circumference about the axis, and a cylindrical mirror type analyzer whose object point is the focusing point, whereby the accepted solid angle for the charged particles is made large.
摘要翻译：静电带电粒子分析仪包括偏转电极系统，该偏转电极系统通过用一次光束照射样品来聚焦从样品发射的带电粒子，所述粒子聚焦在主光束的轴线上或围绕轴线相同的圆周上，其目标点是聚焦点的圆柱形镜面型分析仪，由此使带电粒子接受的立体角变大。

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