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1. 发明申请

US20090165855A1 PASSIVATION LAYER STRUCTURE OF SOLAR CELL AND FABRICATING METHOD THEREOF 审中-公开
标题翻译：太阳能电池的钝化层结构及其制备方法
公开(公告)号：US20090165855A1
公开(公告)日：2009-07-02
申请号：US12052737
申请日：2008-03-21
申请人： Wen-Ching Sun , Chien-Hsun Chen , Chung-Wen Lan , Chien-Rong Huang
发明人： Wen-Ching Sun , Chien-Hsun Chen , Chung-Wen Lan , Chien-Rong Huang
IPC分类号： H01L31/0264 , H01L31/04 , H01L31/18
CPC分类号： H01L31/1868 , H01L31/02167 , Y02E10/50 , Y02P70/521
摘要： A passivation layer structure of a solar cell, disposed on a substrate, is provided. The passivation layer structure has a first passivation layer and a second passivation layer. The first passivation layer is disposed on the substrate. The second passivation layer is disposed between the substrate and the first passivation layer, and the material of the second passivation layer is an oxide of the material of the substrate. Since the second passivation layer is disposed between the substrate and the first passivation layer, the surface passivation effect and carrier lifetime of a photoelectric device are enhanced, and a photoelectric conversion efficiency of the solar cell is increased as well.
摘要翻译：提供了设置在基板上的太阳能电池的钝化层结构。钝化层结构具有第一钝化层和第二钝化层。第一钝化层设置在基板上。第二钝化层设置在基板和第一钝化层之间，第二钝化层的材料是基板的材料的氧化物。由于第二钝化层设置在基板和第一钝化层之间，因此光电装置的表面钝化效应和载流子寿命增加，并且太阳能电池的光电转换效率也增加。

2. 发明申请

US20090101202A1 METHOD OF FAST HYDROGEN PASSIVATION TO SOLAR CELLS MADE OF CRYSTALLINE SILICON 审中-公开
标题翻译：快速氢钝化到晶体硅太阳能电池的方法
公开(公告)号：US20090101202A1
公开(公告)日：2009-04-23
申请号：US11873423
申请日：2007-10-17
申请人： Wen-Ching Sun , Chien-Hsun Chen , Jon-Yiew Gan , Jenn-Chang Hwang , Chwung-Shan Kou , Chih-Wei Wang , Juan-You Lin
发明人： Wen-Ching Sun , Chien-Hsun Chen , Jon-Yiew Gan , Jenn-Chang Hwang , Chwung-Shan Kou , Chih-Wei Wang , Juan-You Lin
IPC分类号： H01L31/00
CPC分类号： H01L31/1868 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of improving efficiency of solar cells made of crystalline silicon, including monocrystalline silicon, multicrystalline silicon and polycrystalline silicon is provided. In the method, a negative bias pulse is applied to solar cells at a predetermined voltage, a predetermined frequency, and a predetermined pulse width while immersing the solar cells in a hydrogen plasma. Hydrogen ions are attracted and quickly implanted into the solar cells. Thus, the passivation of crystal defects in the solar cells can be realized in a short period. Meanwhile, the properties of an antireflection layer cannot be damaged as proper operating parameters are used. Consequently, the serious resistance of the solar cells can be significantly reduced and the filling factor increases as a result. Further, the short-circuit current and the open-circuit voltage can be increased. Therefore, the efficiency can be enhanced.
摘要翻译：提供了一种提高由晶体硅制成的太阳能电池的效率的方法，包括单晶硅，多晶硅和多晶硅。在该方法中，在将太阳能电池浸入氢等离子体的同时，以预定电压，预定频率和预定脉冲宽度向负载偏压脉冲施加负偏压脉冲。氢离子被吸引并迅速地植入到太阳能电池中。因此，可以在短时间内实现太阳能电池中的晶体缺陷的钝化。同时，由于使用适当的操作参数，抗反射层的性能不会被破坏。因此，可以显着降低太阳能电池的严重阻力，结果填充因素增加。此外，可以增加短路电流和开路电压。因此，可以提高效率。

3. 发明申请

US20110277839A1 ED STRUCTURE AND SOLAR CELL INCLUDING THE SAME 审中-公开
标题翻译： ED结构和太阳能电池，包括它们
公开(公告)号：US20110277839A1
公开(公告)日：2011-11-17
申请号：US13106887
申请日：2011-05-13
申请人： Wei-Lun Chang , Wen-Ching Sun , Chung-Wen Lan , Pei-Chen Yu , Chia-Hua Chang
发明人： Wei-Lun Chang , Wen-Ching Sun , Chung-Wen Lan , Pei-Chen Yu , Chia-Hua Chang
IPC分类号： H01L31/0232 , G02B1/11
CPC分类号： G02B1/118 , H01L31/02168 , H01L31/02363 , H01L31/068 , Y02E10/547
摘要： An anti-reflection coating (ARC) stacked structure including a first ARC layer and a second ARC layer is provided. The first ARC layer is a continuous layer and the second ARC layer, located over the first ARC layer, is formed in fractals. In addition, a solar cell including the ARC stacked structure is further provided.
摘要翻译：提供了包括第一ARC层和第二ARC层的防反射涂层（ARC）堆叠结构。第一ARC层是连续层，位于第一ARC层上方的第二ARC层以分形形成。此外，还提供了包括ARC堆叠结构的太阳能电池。

4. 发明申请

US20100083900A1 ATOMIC LAYER DEPOSITION APPARATUS 审中-公开
标题翻译：原子层沉积装置
公开(公告)号：US20100083900A1
公开(公告)日：2010-04-08
申请号：US12427763
申请日：2009-04-22
申请人： Wen-Ching Sun , Yun-Sheng Chung , Chung-Wen Lan
发明人： Wen-Ching Sun , Yun-Sheng Chung , Chung-Wen Lan
IPC分类号： C23C16/00
CPC分类号： C23C16/45544
摘要： An atomic layer deposition apparatus is provided. The atomic layer deposition apparatus includes a reaction chamber, a first heater, a second heater, a first gas supply system, a second gas supply system and a vacuum system. The vacuum system is connected to the reaction chamber. The reaction chamber includes a preheating chamber and a plating chamber connected to the preheating chamber. The first heater is for heating the preheating chamber. The first gas supply system is connected to the preheating chamber. The second heater is for heating the plating chamber. The second gas supply system is connected to the plating chamber.
摘要翻译：提供原子层沉积装置。原子层沉积设备包括反应室，第一加热器，第二加热器，第一气体供应系统，第二气体供应系统和真空系统。真空系统连接到反应室。反应室包括预热室和连接到预热室的电镀室。第一个加热器是用于加热预热室。第一气体供应系统连接到预热室。第二个加热器用于加热电镀室。第二气体供应系统连接到电镀室。

5. 发明申请

US20130125961A1 OPTICAL PASSIVATION FILM, METHOD FOR MANUFACTURING THE SAME, AND SOLAR CELL 审中-公开
标题翻译：光学钝化膜，其制造方法和太阳能电池
公开(公告)号：US20130125961A1
公开(公告)日：2013-05-23
申请号：US13459250
申请日：2012-04-30
申请人： Wen-Ching Sun , Sheng-Min Yu , Tai-Jui Wang , Chia-Liang Sun , Tzer-Shen Lin
发明人： Wen-Ching Sun , Sheng-Min Yu , Tai-Jui Wang , Chia-Liang Sun , Tzer-Shen Lin
IPC分类号： H01L31/02 , C09D1/00 , B05D5/06
CPC分类号： H01L31/02167 , H01L31/02168 , H01L31/068 , Y02E10/547
摘要： An optical passivation film includes Tii-xAlxOy:Z, where Z represents a halogen, x is from 0.05 to 0.95, and y is greater than 0. A method for manufacturing the optical passivation film includes preparing a spray solution including an aluminium oxide precursor, a titanium oxide precursor, a halogen solution and a solvent. A substrate is disposed on a heating device to heat the substrate. The spray solution is sprayed on the substrate to form the optical passivation film. A solar cell having the optical passivation film is also provided.
摘要翻译：光学钝化膜包括Tii-xAl x O y：Z，其中Z表示卤素，x为0.05至0.95，y大于0.光学钝化膜的制造方法包括制备包含氧化铝前体的喷雾溶液，氧化钛前体，卤素溶液和溶剂。将基板设置在加热装置上以加热基板。将喷雾溶液喷涂在基材上以形成光学钝化膜。还提供了具有光学钝化膜的太阳能电池。

6. 发明授权

US08564104B2 Passivation layer structure of semiconductor device and method for forming the same 有权
标题翻译：半导体器件的钝化层结构及其形成方法
公开(公告)号：US08564104B2
公开(公告)日：2013-10-22
申请号：US13084486
申请日：2011-04-11
申请人： Wen-Ching Sun , Tzer-Shen Lin , Sheng-Min Yu
发明人： Wen-Ching Sun , Tzer-Shen Lin , Sheng-Min Yu
IPC分类号： H01L23/58 , H01L21/31
CPC分类号： H01L31/02167 , C23C18/1216 , C23C18/1245 , C23C18/1258 , C23C18/1287 , C23C18/1291 , H01L31/022425 , H01L31/068 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： According to an embodiment of the invention, a passivation layer structure of a semiconductor device disposed on a semiconductor substrate is provided, which includes a passivation layer structure disposed on the semiconductor substrate, wherein the passivation layer structure includes a halogen-doped aluminum oxide layer. According to an embodiment of the invention, a method for forming a passivation structure of a semiconductor device is provided.
摘要翻译：根据本发明的实施例，提供了设置在半导体衬底上的半导体器件的钝化层结构，其包括设置在半导体衬底上的钝化层结构，其中钝化层结构包括掺杂卤素的氧化铝层。根据本发明的实施例，提供了一种用于形成半导体器件的钝化结构的方法。

7. 发明申请

US20100240170A1 METHOD OF FABRICATING SOLAR CELL 审中-公开
标题翻译：制造太阳能电池的方法
公开(公告)号：US20100240170A1
公开(公告)日：2010-09-23
申请号：US12508563
申请日：2009-07-24
申请人： Wen-Ching Sun
发明人： Wen-Ching Sun
IPC分类号： H01L31/0232
CPC分类号： H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a solar cell is provided. A dopant material layer is deposited on a front surface of a semiconductor substrate and an over-depositing dopant layer is also formed on a back surface of the semiconductor substrate, wherein dopants of the dopant material layer diffuse into the front surface of the semiconductor substrate to form a doping layer and dopants of the over-depositing dopant layer diffuse into the back surface of the semiconductor substrate to form a doping residual layer during said depositing process. The dopant material layer and the over-depositing dopant layer are removed. An anti-reflective layer is formed on the doping layer. After the doping residual layer on the semiconductor substrate is removed to expose the back surface of the semiconductor substrate, a passivation layer is formed on the exposed back surface of the semiconductor substrate. Then, a first electrode and a second electrode are formed.
摘要翻译：提供一种制造太阳能电池的方法。掺杂剂材料层沉积在半导体衬底的前表面上，并且在半导体衬底的后表面上也形成过沉积掺杂剂层，其中掺杂剂材料层的掺杂剂扩散到半导体衬底的前表面，以形成掺杂层，并且过沉积掺杂剂层的掺杂剂扩散到半导体衬底的背表面中，以在所述沉积工艺期间形成掺杂残余层。去除掺杂剂材料层和过度沉积掺杂剂层。在掺杂层上形成抗反射层。在去除半导体衬底上的掺杂残余层以露出半导体衬底的背面之后，在半导体衬底的暴露的背面上形成钝化层。然后，形成第一电极和第二电极。

8. 发明授权

US09169357B2 Polyimide copolymers and method for fabricating patterned metal oxide layers 有权
标题翻译：聚酰亚胺共聚物和制造图案化金属氧化物层的方法
公开(公告)号：US09169357B2
公开(公告)日：2015-10-27
申请号：US13336606
申请日：2011-12-23
申请人： Jhy-Long Jeng , Jeng-Yu Tsai , Shur-Fen Liu , Chin-Ching Lin , Yu-Chun Chen , Wen-Ching Sun , Jinn-Shing King
发明人： Jhy-Long Jeng , Jeng-Yu Tsai , Shur-Fen Liu , Chin-Ching Lin , Yu-Chun Chen , Wen-Ching Sun , Jinn-Shing King
IPC分类号： C08G73/10 , B05D1/32 , C08L79/08 , C03C17/25 , C08G73/00 , B05D1/00
CPC分类号： C08G73/10 , C03C17/253 , C03C2218/34 , C08G73/101 , C08G73/1017 , C08G73/1039 , C08G73/1046 , C08G73/1064 , C08G73/1075 , C08G73/1078 , C08L79/08
摘要： A polyimide copolymer represented by formula (I) or formula (II) is provided. In formula (I) or formula (II), B is a cycloaliphatic group or aromatic group, A is an aromatic group, R is hydrogen or phenyl, and m and n are 20-50. The invention also provides a method for fabricating a patterned metal oxide layer.
摘要翻译：提供由式（I）或式（II）表示的聚酰亚胺共聚物。在式（I）或式（II）中，B是脂环族基团或芳基，A是芳基，R是氢或苯基，m和n是20-50。本发明还提供了一种用于制造图案化金属氧化物层的方法。

9. 发明申请

US20120104566A1 PASSIVATION LAYER STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME 有权
标题翻译：半导体器件的钝化层结构及其形成方法
公开(公告)号：US20120104566A1
公开(公告)日：2012-05-03
申请号：US13084486
申请日：2011-04-11
申请人： Wen-Ching Sun , Tzer-Shen Lin , Sheng-Min Yu
发明人： Wen-Ching Sun , Tzer-Shen Lin , Sheng-Min Yu
IPC分类号： H01L23/58 , H01L21/31
CPC分类号： H01L31/02167 , C23C18/1216 , C23C18/1245 , C23C18/1258 , C23C18/1287 , C23C18/1291 , H01L31/022425 , H01L31/068 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： According to an embodiment of the invention, a passivation layer structure of a semiconductor device for disposed on a semiconductor substrate is provided, which includes a passivation layer structure disposed on the semiconductor substrate, wherein the passivation layer structure includes a halogen-doped aluminum oxide layer. According to an embodiment of the invention, a method for forming a passivation structure of a semiconductor device is provided.
摘要翻译：根据本发明的实施例，提供了一种用于设置在半导体衬底上的半导体器件的钝化层结构，其包括设置在半导体衬底上的钝化层结构，其中钝化层结构包括卤素掺杂的氧化铝层。根据本发明的实施例，提供了一种用于形成半导体器件的钝化结构的方法。

10. 发明申请

US20110139250A1 BIFACIAL SOLAR CELL 审中-公开
标题翻译：双极太阳能电池
公开(公告)号：US20110139250A1
公开(公告)日：2011-06-16
申请号：US12788320
申请日：2010-05-27
申请人： Chen-Hsun Du , Wen-Ching Sun , Wei-Lun Chang
发明人： Chen-Hsun Du , Wen-Ching Sun , Wei-Lun Chang
IPC分类号： H01L31/00
CPC分类号： H01L31/02167 , H01L31/022433 , H01L31/068 , Y02E10/547
摘要： A bifacial solar cell including a semiconductor substrate of a first conductivity type, a fixed charge layer, a first grid electrode, a semiconductor layer of a second conductivity type and a second grid electrode are provided. The fixed charge layer is located on a rear surface of the semiconductor substrate. The first grid electrode is located over the rear surface of the semiconductor substrate and electrically connected to the rear surface of the semiconductor substrate by penetrating through the fixed charge layer. The semiconductor layer is located on the front surface of the semiconductor layer. The second grid electrode is located over and electrically connected to the semiconductor layer.
摘要翻译：提供了包括第一导电类型的半导体衬底，固定电荷层，第一栅极，第二导电类型的半导体层和第二栅极的双面太阳能电池。固定电荷层位于半导体衬底的后表面上。第一栅电极位于半导体衬底的后表面上，并通过穿透固定电荷层与半导体衬底的后表面电连接。半导体层位于半导体层的正面上。第二栅电极位于半导体层上并电连接。

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