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1. 发明授权

US06921710B2 Technique for high efficiency metalorganic chemical vapor deposition 失效
公开(公告)号：US06921710B2
公开(公告)日：2005-07-26
申请号：US10757638
申请日：2004-01-13
申请人： Weimin Li , Sam Yang
发明人： Weimin Li , Sam Yang
IPC分类号： B05C11/00 , C23C16/18 , H01L21/02 , H10L21/20
CPC分类号： C23C16/45523 , C23C16/18 , H01L28/65
摘要： A technique for more efficiently forming conductive elements, such as conductive layers and electrodes, using chemical vapor deposition. A conductive precursor gas, such as a platinum precursor gas, having organic compounds to improve step coverage is introduced into a chemical vapor deposition chamber. A reactant is also introduced into the chamber that reacts with residue organic compounds on the conductive element so as to remove the organic compounds from the nucleating sites to thereby permit more efficient subsequent chemical vapor deposition of conductive elements.

2. 发明授权

US07214618B2 Technique for high efficiency metalorganic chemical vapor deposition 失效
标题翻译：高效金属有机化学气相沉积技术
公开(公告)号：US07214618B2
公开(公告)日：2007-05-08
申请号：US10756222
申请日：2004-01-13
申请人： Weimin Li , Sam Yang
发明人： Weimin Li , Sam Yang
IPC分类号： H01L21/44 , H01L21/8234 , H01L21/8244
CPC分类号： C23C16/45523 , C23C16/18 , H01L28/65
摘要： A technique for more efficiently forming conductive elements, such as conductive layers and electrodes, using chemical vapor deposition. A conductive precursor gas, such as a platinum precursor gas, having organic compounds to improve step coverage is introduced into a chemical vapor deposition chamber. A reactant is also introduced into the chamber that reacts with residue organic compounds on the conductive element so as to remove the organic compounds from the nucleating sites to thereby permit more efficient subsequent chemical vapor deposition of conductive elements.
摘要翻译：一种使用化学气相沉积更有效地形成诸如导电层和电极的导电元件的技术。将具有改善步骤覆盖度的有机化合物的导电前体气体，例如铂前体气体引入化学气相沉积室。反应物也被引入室中，与导电元件上的残余有机化合物反应，以便从成核位置除去有机化合物，从而允许更有效的后续化学气相沉积导电元件。

3. 发明授权

US06676756B1 Technique for high efficiency metalorganic chemical vapor deposition 有权
标题翻译：高效金属有机化学气相沉积技术
公开(公告)号：US06676756B1
公开(公告)日：2004-01-13
申请号：US10234729
申请日：2002-08-30
申请人： Weimin Li , Sam Yang
发明人： Weimin Li , Sam Yang
IPC分类号： C23C1600
CPC分类号： C23C16/45523 , C23C16/18 , H01L28/65
摘要： A technique for more efficiently forming conductive elements, such as conductive layers and electrodes, using chemical vapor deposition. A conductive precursor gas, such as a platinum precursor gas, having organic compounds to improve step coverage is introduced into a chemical vapor deposition chamber. A reactant is also introduced into the chamber that reacts with residue organic compounds on the conductive element so as to remove the organic compounds from the nucleating sites to thereby permit more efficient subsequent chemical vapor deposition of conductive elements.
摘要翻译：一种使用化学气相沉积更有效地形成诸如导电层和电极的导电元件的技术。将具有改善步骤覆盖度的有机化合物的导电前体气体，例如铂前体气体引入化学气相沉积室。反应物也被引入室中，与导电元件上的残余有机化合物反应，以便从成核位置除去有机化合物，从而允许更有效的后续化学气相沉积导电元件。

4. 发明申请

US20060076597A1 Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers 审中-公开
公开(公告)号：US20060076597A1
公开(公告)日：2006-04-13
申请号：US11235866
申请日：2005-09-26
申请人： Vishnu Agarwal , Garo Derderian , Gurtej Sandhu , Weimin Li , Mark Visokay , Cem Basceri , Sam Yang
发明人： Vishnu Agarwal , Garo Derderian , Gurtej Sandhu , Weimin Li , Mark Visokay , Cem Basceri , Sam Yang
IPC分类号： H01L29/94
CPC分类号： H01L28/84 , H01L21/02183 , H01L21/02197 , H01L21/31637 , H01L28/55 , H01L28/65
摘要： Capacitors having increased capacitance include an enhanced-surface-area (rough-surfaced) electrically conductive layer or other layers that are compatible with the high-dielectric constant materials. In one approach, an enhanced-surface-area electrically conductive layer for such capacitors is formed by processing a ruthenium oxide layer at high temperature at or above 500° C. and low pressure 75 torr or below, most desirably 5 torr or below, to produce a roughened ruthenium layer having a textured surface with a mean feature size of at least about 100 Angstroms. The initial ruthenium oxide layer may be provided by chemical vapor deposition techniques or sputtering techniques or the like. The layer may be formed over an underlying electrically conductive layer. The processing may be performed in an inert ambient or in a reducing ambient. A nitrogen-supplying ambient or nitrogen-supplying reducing ambient may be used during the processing or afterwards to passivate the ruthenium for improved compatibility with high-dielectric-constant dielectric materials. Processing in an oxidizing ambient may also be performed to passivate the roughened layer. The roughened layer of ruthenium may be used to form an enhanced-surface-area electrically conductive layer. The resulting enhanced-surface-area electrically conductive layer may form a plate of a storage capacitor in an integrated circuit, such as in a memory cell of a DRAM or the like. In another approach, a tungsten nitride layer is provided as an first electrode of such a capacitor. The capacitor, or at least the tungsten nitride layer, is annealed to increase the capacitance of the capacitor.

5. 发明申请

US20050223978A1 Technique for high efficiency metalorganic chemical vapor deposition 审中-公开
标题翻译：高效金属有机化学气相沉积技术
公开(公告)号：US20050223978A1
公开(公告)日：2005-10-13
申请号：US11146953
申请日：2005-06-07
申请人： Weimin Li , Sam Yang
发明人： Weimin Li , Sam Yang
IPC分类号： B05C11/00 , C23C16/18 , H01L21/02
CPC分类号： C23C16/45523 , C23C16/18 , H01L28/65
摘要： A technique for more efficiently forming conductive elements, such as conductive layers and electrodes, using chemical vapor deposition. A conductive precursor gas, such as a platinum precursor gas, having organic compounds to improve step coverage is introduced into a chemical vapor deposition chamber. A reactant is also introduced into the chamber that reacts with residue organic compounds on the conductive element so as to remove the organic compounds from the nucleating sites to thereby permit more efficient subsequent chemical vapor deposition of conductive elements.
摘要翻译：一种使用化学气相沉积更有效地形成诸如导电层和电极的导电元件的技术。将具有改善步骤覆盖度的有机化合物的导电前体气体，例如铂前体气体引入化学气相沉积室。反应物也被引入室中，与导电元件上的残余有机化合物反应，以便从成核位置除去有机化合物，从而允许更有效的后续化学气相沉积导电元件。

6. 发明授权

US06576538B2 Technique for high efficiency metalorganic chemical vapor deposition 有权
标题翻译：高效金属有机化学气相沉积技术
公开(公告)号：US06576538B2
公开(公告)日：2003-06-10
申请号：US09945567
申请日：2001-08-30
申请人： Weimin Li , Sam Yang
发明人： Weimin Li , Sam Yang
IPC分类号： H01L2144
CPC分类号： C23C16/45523 , C23C16/18 , H01L28/65
摘要： A technique for more efficiently forming conductive elements, such as conductive layers and electrodes, using chemical vapor deposition. A conductive precursor gas, such as a platinum precursor gas, having organic compounds to improve step coverage is introduced into a chemical vapor deposition chamber. A reactant is also introduced into the chamber that reacts with residue organic compounds on the conductive element so as to remove the organic compounds from the nucleating sites to thereby permit more efficient subsequent chemical vapor deposition of conductive elements.
摘要翻译：一种使用化学气相沉积更有效地形成诸如导电层和电极的导电元件的技术。将具有改善步骤覆盖度的有机化合物的导电前体气体，例如铂前体气体引入化学气相沉积室。反应物也被引入室中，与导电元件上的残余有机化合物反应，以便从成核位置除去有机化合物，从而允许更有效的后续化学气相沉积导电元件。

7. 发明授权

US08471908B2 Three-dimensional mirror display system for a vehicle and method 有权
标题翻译：一种用于车辆和方法的立体镜显示系统
公开(公告)号：US08471908B2
公开(公告)日：2013-06-25
申请号：US12906387
申请日：2010-10-18
申请人： Torsten Kanning , Peter G. Diehl , Sam Yang
发明人： Torsten Kanning , Peter G. Diehl , Sam Yang
IPC分类号： H04N7/18
CPC分类号： B60R1/12 , B60R2001/1253 , B60R2300/107 , H04N13/139 , H04N13/239 , H04N13/31
摘要： A display system for a vehicle includes a first camera and a second camera adapted to be mounted to the vehicle. A mirror assembly is provided having a display screen and a view divider such as a parallax barrier. A controller is operatively connected to the cameras and to the display screen and is operable to cause the recorded images to appear as a single three-dimensional image when the images are viewed through the view divider. A method of providing an image of an object that is rearward of a vehicle is also provided.
摘要翻译：车辆的显示系统包括适于安装到车辆的第一照相机和第二照相机。提供具有显示屏和诸如视差屏障的分视器的镜组件。控制器可操作地连接到相机和显示屏幕，并且当通过视野分割器观看图像时，可操作地使得所记录的图像作为单个三维图像出现。还提供了一种提供车辆后方的物体的图像的方法。

8. 发明申请

US20080057663A1 LOW LEAKAGE MIM CAPACITOR 有权
公开(公告)号：US20080057663A1
公开(公告)日：2008-03-06
申请号：US11932512
申请日：2007-10-31
申请人： Sam Yang
发明人： Sam Yang
IPC分类号： H01L21/20
CPC分类号： H01L27/10805 , G11C11/404 , G11C2211/4016 , H01L21/76895 , H01L27/10852 , H01L28/56 , H01L28/91 , Y10S257/906 , Y10S438/957
摘要： Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxide buffer layer interposed between the dielectric layer and at least one of the bottom and top electrodes. Each metal oxide buffer layer acts to improve capacitance and reduce capacitor leakage. The capacitors are suited for use as memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.

9. 发明授权

US07253076B1 Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers 有权
标题翻译：含有钌和钨的层的形成方法和集成电路结构
公开(公告)号：US07253076B1
公开(公告)日：2007-08-07
申请号：US09590795
申请日：2000-06-08
申请人： Vishnu K. Agarwal , Garo Derderian , Gurtej S. Sandhu , Weimin M. Li , Mark Visokay , Cem Basceri , Sam Yang
发明人： Vishnu K. Agarwal , Garo Derderian , Gurtej S. Sandhu , Weimin M. Li , Mark Visokay , Cem Basceri , Sam Yang
IPC分类号： H01L21/20
CPC分类号： H01L28/84 , H01L21/31637 , H01L28/55 , H01L28/65
摘要： Capacitors having increased capacitance include an enhanced-surface-area (rough-surfaced) electrically conductive layer or other layers that are compatible with the high-dielectric constant materials. In one approach, an enhanced-surface-area electrically conductive layer for such capacitors is formed by processing a ruthenium oxide layer at high temperature at or above 500° C. and low pressure 75 torr or below, most desirably 5 torr or below, to produce a roughened ruthenium layer having a textured surface with a mean feature size of at least about 100 Angstroms. The initial ruthenium oxide layer may be provided by chemical vapor deposition techniques or sputtering techniques or the like. The layer may be formed over an underlying electrically conductive layer. The processing may be performed in an inert ambient or in a reducing ambient. A nitrogen-supplying ambient or nitrogen-supplying reducing ambient may be used during the processing or afterwards to passivate the ruthenium for improved compatibility with high-dielectric-constant dielectric materials. Processing in an oxidizing ambient may also be performed to passivate the roughened layer. The roughened layer of ruthenium may be used to form an enhanced-surface-area electrically conductive layer. The resulting enhanced-surface-area electrically conductive layer may form a plate of a storage capacitor in an integrated circuit, such as in a memory cell of a DRAM or the like. In another approach, a tungsten nitride layer is provided as an first electrode of such a capacitor. The capacitor, or at least the tungsten nitride layer, is annealed to increase the capacitance of the capacitor.
摘要翻译：具有增加的电容的电容器包括增强的表面积（粗糙表面）导电层或与高介电常数材料相容的其它层。在一种方法中，用于这种电容器的增强表面积导电层是通过在高温或高于500℃，低压75托或更低，最理想的5托或更低的高温下处理氧化钌层形成的，产生具有至少约100埃的平均特征尺寸的纹理表面的粗糙钌层。初始氧化钌层可以通过化学气相沉积技术或溅射技术等来提供。该层可以形成在下面的导电层上。处理可以在惰性环境或还原环境中进行。可以在处理期间或之后使用供氮环境或供氮还原环境以钝化钌以改善与高介电常数电介质材料的相容性。氧化环境中的处理也可以进行以钝化粗糙层。可以使用粗糙化的钌层来形成增强表面积的导电层。所形成的增强表面积导电层可以在诸如DRAM等的存储单元中的集成电路中形成存储电容器的板。在另一种方法中，提供氮化钨层作为这种电容器的第一电极。电容器或至少氮化钨层被退火以增加电容器的电容。

10. 发明授权

US07192828B2 Capacitor with high dielectric constant materials and method of making 有权
标题翻译：具有高介电常数材料和制作方法的电容器
公开(公告)号：US07192828B2
公开(公告)日：2007-03-20
申请号：US10819420
申请日：2004-04-07
申请人： Cem Basceri , Gurtej S. Sandhu , Sam Yang
发明人： Cem Basceri , Gurtej S. Sandhu , Sam Yang
IPC分类号： H01L21/8242
CPC分类号： H01L28/75 , H01L21/02178 , H01L21/02183 , H01L21/02197 , H01L21/02271 , H01L21/31604 , H01L21/31683 , H01L27/10811 , H01L28/55
摘要： A stabilized capacitor using non-oxide electrodes and high dielectric constant oxide dielectric materials and methods of making such capacitors and their incorporation into DRAM cells is provided. A preferred method includes providing a non-oxide electrode, oxidizing an upper surface of the non-oxide electrode, depositing a high dielectric constant oxide dielectric material on the oxidized surface of the non-oxide electrode, and depositing an upper layer electrode on the high dielectric constant oxide dielectric material.
摘要翻译：提供了使用非氧化物电极和高介电常数氧化物电介质材料的稳定电容器以及制造这种电容器并将其并入DRAM单元的方法。优选的方法包括提供非氧化物电极，氧化非氧化物电极的上表面，在非氧化物电极的氧化表面上沉积高介电常数氧化物电介质材料，以及在高电极上沉积上层电极介电常数氧化物介电材料。

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