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1. 发明授权

US06641867B1 Methods for chemical vapor deposition of tungsten on silicon or dielectric 有权
标题翻译：在硅或电介质上钨化学气相沉积的方法
公开(公告)号：US06641867B1
公开(公告)日：2003-11-04
申请号：US09276043
申请日：1999-03-25
申请人： Wei-Yung Hsu , Jiong-Ping Lu , August J. Fischer , Ming-Jang Hwang
发明人： Wei-Yung Hsu , Jiong-Ping Lu , August J. Fischer , Ming-Jang Hwang
IPC分类号： B05D512
CPC分类号： H01L21/76843 , C23C16/08 , H01L21/28061 , H01L21/28556 , H01L21/32051 , H01L21/76856 , H01L21/76876 , H01L21/76877
摘要： In situ nitridation of a thin layer of either silicon or tungsten provides an adhesive layer for bulk deposition of tungsten. Alternatively, a thin layer of silicon can be deposited directly on a dielectric, then reacted with WF6 to replace the silicon with tungsten, which provides a nucleation layer for bulk tungsten deposition.
摘要翻译：硅或钨的薄层的原位氮化提供了用于钨的体积沉积的粘合剂层。或者，可以将薄的硅层沉积在电介质上，然后与WF6反应以用钨代替硅，其提供用于体钨沉积的成核层。

2. 发明授权

US06245672B1 Method of forming diffusion barriers for copper metallization in integrated cirucits 有权
标题翻译：在集成的铁芯中形成铜金属化的扩散阻挡层的方法
公开(公告)号：US06245672B1
公开(公告)日：2001-06-12
申请号：US09177412
申请日：1998-10-23
申请人： Qi-Zhong Hong , Wei-Yung Hsu , Jiong-Ping Lu , Robert H. Havemann
发明人： Qi-Zhong Hong , Wei-Yung Hsu , Jiong-Ping Lu , Robert H. Havemann
IPC分类号： H01L214763
CPC分类号： H01L21/76856 , H01L21/76843 , H01L21/76855
摘要： An integrated circuit structure including copper metallization (20, 32, 42), and a method of fabricating the same are disclosed. The structure includes a doped region (7) of a silicon substrate (9), which is typically clad with a metal silicide film (12) formed by way of direct react silicidation. At contact locations (CT) at which the copper metallization (20, 32, 42) is to make contact to the doped region (7), a chemically-densified barrier layer (16, 30, 38) provides a diffusion barrier to the overlying copper metallization (20, 32, 42). The chemically-densified barrier layer (16, 30, 38) is formed by an anneal of the structure to react impurities (14, 28, 36) with the underlying refractory-metal-based film (12, 34); the impurities are introduced by way of wet chemistry, plasma bombardment, or from the ambient in which the structure is annealed.
摘要翻译：公开了一种包括铜金属化（20,32,42）的集成电路结构及其制造方法。该结构包括硅衬底（9）的掺杂区域（7），其通常用通过直接反应硅化形成的金属硅化物膜（12）包覆。在铜金属化层（20,32,42）将与掺杂区域（7）接触的接触位置（CT）处，化学致密化的势垒层（16,30,38）为覆盖层铜金属化（20,32,42）。化学致密化的阻挡层（16,30,38）通过该结构的退火形成，以使杂质（14,28,36）与下面的耐熔金属基膜（12,34）反应; 杂质通过湿化学，等离子体轰击或结构退火的环境引入。

3. 发明授权

US06451677B1 Plasma-enhanced chemical vapor deposition of a nucleation layer in a tungsten metallization process 有权
标题翻译：在钨金属化过程中等离子体增强的成核层的化学气相沉积
公开(公告)号：US06451677B1
公开(公告)日：2002-09-17
申请号：US09255489
申请日：1999-02-23
申请人： Jiong-Ping Lu , Boyang Lin , Wei-Yung Hsu
发明人： Jiong-Ping Lu , Boyang Lin , Wei-Yung Hsu
IPC分类号： H01L213205
CPC分类号： H01L21/76876 , H01L21/28556 , H01L21/76843
摘要： An embodiment of the instant invention is a method of fabricating an electronic device formed over a semiconductor substrate and having a conductive feature comprised of tungsten, the method comprising the steps of: forming a nucleation layer over the semiconductor substrate by introducing a combination of WF6, H2 and a plasma; and forming a tungsten layer on the nucleation layer by means of chemical vapor deposition. In an alternative embodiment, an insulating layer is formed on the substrate and situated between the nucleation layer and the substrate. Preferably, this embodiment additionally includes the step of forming a nitrogen-containing layer under the nucleation layer by introducing a combination of WF6, N2, H2, and a plasma. The conductive feature is, preferably, a conductive gate structure, and the insulating layer is, preferably, comprised of: an oxide, a nitride, an insulating material with a dielectric constant substantially higher than that of an oxide, and any combination thereof.
摘要翻译：本发明的一个实施例是一种制造形成在半导体衬底上并且具有由钨构成的导电特征的电子器件的方法，该方法包括以下步骤：通过引入WF6的组合形成半导体衬底上的成核层， H2和等离子体; 并通过化学气相沉积在成核层上形成钨层。在替代实施例中，绝缘层形成在衬底上并且位于成核层和衬底之间。优选地，该实施方案另外包括通过引入WF 6，N 2，H 2和等离子体的组合在成核层下形成含氮层的步骤。导电特征优选地是导电栅极结构，并且绝缘层优选地包括：氧化物，氮化物，具有显着高于氧化物的介电常数的绝缘材料及其任何组合。

4. 发明授权

US06680249B2 Si-rich surface layer capped diffusion barriers 有权
标题翻译：富硅表面层封端扩散阻挡层
公开(公告)号：US06680249B2
公开(公告)日：2004-01-20
申请号：US10185383
申请日：2002-06-28
申请人： Jiong-Ping Lu , Wei-Yung Hsu , Qi-Zhong Hong , Richard A. Faust
发明人： Jiong-Ping Lu , Wei-Yung Hsu , Qi-Zhong Hong , Richard A. Faust
IPC分类号： H01L2144
CPC分类号： H01L21/2855 , H01L21/76807 , H01L21/76843 , H01L21/76846 , H01L21/76856
摘要： A copper interconnect having a transition metal-nitride barrier (106) with a thin metal-silicon-nitride cap (108). A transition metal-nitride barrier (106) is formed over the structure. Then the barrier (106) is annealed in a Si-containing ambient to form a silicon-rich capping layer (108) at the surface of the barrier (106). The copper (110) is then deposited over the silicon-rich capping layer (108) with good adhesion.
摘要翻译：一种具有过渡金属氮化物屏障（106）与铜金属 - 氮化硅帽（108）的铜互连。在该结构上形成过渡金属氮化物屏障（106）。然后，阻挡层（106）在含Si环境中退火，以在阻挡层（106）的表面形成富含硅的覆盖层（108）。然后，铜（110）以良好的粘合力沉积在富含硅的覆盖层（108）上。

5. 发明授权

US06184129B2 Low resistivity poly-silicon gate produced by selective metal growth 有权
标题翻译：通过选择性金属生长生产的低电阻率多晶硅栅极
公开(公告)号：US06184129B2
公开(公告)日：2001-02-06
申请号：US09405265
申请日：1999-09-23
申请人： Ming Hwang , Jiong-Ping Lu , Duane E. Carter , Wei-Yung Hsu
发明人： Ming Hwang , Jiong-Ping Lu , Duane E. Carter , Wei-Yung Hsu
IPC分类号： H01L2148
CPC分类号： H01L27/10873 , H01L21/28061 , H01L21/76885 , H01L27/10888 , H01L27/10891 , H01L29/4941 , H01L29/66545
摘要： A method for fabricating a low resistivity polymetal silicide conductor/gate comprising, the steps of forming a polysilicon (66) over a gate oxide (64) followed by protection of the polysilicon (66) with a sacrificial material (68), is disclosed. Gate sidewalls (70) are created to protect the sides of the polysilicon (66) and the sacrificial material (68), followed by stripped the sacrificial material (68) to expose the top surface of the polysilicon (66). Next, a diffusion barrier (76) is deposited over the exposed polysilicon (66) and a metal layer (78) is selectively grown on the diffusion barrier (76) to form a gate contact and conductor. Finally, a dielectric layer (80) is deposited over the selectively grown metal layer (78), the sidewalls (70) and the gate oxide (64).
摘要翻译：公开了一种用于制造低电阻率多金属硅化物导体/栅极的方法，包括以下步骤：在栅极氧化物（64）上形成多晶硅（66），随后用牺牲材料（68）保护多晶硅（66）。产生栅极侧壁（70）以保护多晶硅（66）和牺牲材料（68）的侧面，随后剥离牺牲材料（68）以暴露多晶硅（66）的顶表面。接下来，在暴露的多晶硅（66）上沉积扩散阻挡层（76），并且在扩散阻挡层（76）上选择性地生长金属层（78）以形成栅极接触和导体。最后，介电层（80）沉积在选择性生长的金属层（78），侧壁（70）和栅极氧化物（64）上。

6. 发明授权

US6037013A Barrier/liner with a SiNx-enriched surface layer on MOCVD prepared films 失效
标题翻译：在MOCVD制备的膜上具有SiN x富集表面层的阻挡层/衬垫
公开(公告)号：US6037013A
公开(公告)日：2000-03-14
申请号：US34269
申请日：1998-03-04
申请人： Wei-Yung Hsu , Qi-Zhong Hong , Jiong-Ping Lu
发明人： Wei-Yung Hsu , Qi-Zhong Hong , Jiong-Ping Lu
IPC分类号： H01L21/285 , H01L21/318 , B05D3/06 , C23C16/30
CPC分类号： H01L21/3185 , H01L21/28568
摘要： A barrier/liner structure (10) and method. First, a porous nitride layer (12) is formed over a structure (18), for example, by metal-organic CVD (MOCVD). Then, the porous nitride layer (12) is exposed to a silicon- (or dopant-) containing ambient to obtain a silicon-(or dopant) rich surface layer (14). Finally, the silicon- (or dopant) rich surface layer (14) is nitrided to obtain a silicon-nitride (or dopant-nitride) enriched surface layer (16).
摘要翻译：屏障/衬垫结构（10）和方法。首先，例如通过金属 - 有机CVD（MOCVD）在结构（18）上形成多孔氮化物层（12）。然后，多孔氮化物层（12）暴露于含硅（或掺杂剂）的环境中以获得富含硅（或掺杂剂）的表面层（14）。最后，将富含硅（或掺杂剂）的表面层（14）进行氮化，以获得富含氮化物（或氮化物）的表面层（16）。

7. 发明授权

US6120842A TiN+Al films and processes 失效
标题翻译： TiN + Al膜和工艺
公开(公告)号：US6120842A
公开(公告)日：2000-09-19
申请号：US954989
申请日：1997-10-21
申请人： Jiong-Ping Lu , Wei-Yung Hsu , Qi-Zhong Hong
发明人： Jiong-Ping Lu , Wei-Yung Hsu , Qi-Zhong Hong
IPC分类号： H01L21/02 , H01L21/285 , H01L21/302
CPC分类号： H01L28/75 , H01L21/28556 , H01L21/28568 , H01L28/55
摘要： A process for producing conformal and stable TiN+Al films, which provides flexibility in selecting the chemical composition and layering. In this new process, porous TiCN is first deposited, and then Al is incorporated by exposing the porous film to CVD aluminum conditions at low temperatures.
摘要翻译：一种生产保形稳定的TiN + Al薄膜的方法，为选择化学成分和分层提供了灵活性。在该新方法中，首先沉积多孔TiCN，然后通过在低温下将多孔膜暴露于CVD铝条件下而引入Al。

8. 发明授权

US6100188A Stable and low resistance metal/barrier/silicon stack structure and related process for manufacturing 失效
标题翻译：稳定和低电阻金属/屏障/硅堆叠结构及相关制造工艺
公开(公告)号：US6100188A
公开(公告)日：2000-08-08
申请号：US108474
申请日：1998-07-01
申请人： Jiong-Ping Lu , Ming Hwang , Dick N. Anderson , Duane E. Carter , Wei-Yung Hsu
发明人： Jiong-Ping Lu , Ming Hwang , Dick N. Anderson , Duane E. Carter , Wei-Yung Hsu
IPC分类号： H01L21/28 , H01L29/49 , H01L21/44
CPC分类号： H01L29/4941 , H01L21/28061
摘要： A metal-poly stack gate structure and associated method for forming a conductive barrier layer between W and poly in the metal-gate stack gate structure. The process includes the steps of depositing doped silicon on a substrate; forming nitride on the deposited silicon; depositing a metal on the nitride to form a metal/nitride/deposited silicon stack; and thermally treating the stack to transform the nitride into a conductive barrier layer between the metal and the deposited silicon. The thermal treatment transforms the nitride layer (SiN.sub.x or SiN.sub.x O.sub.y) into a conductive barrier (WSi.sub.x N.sub.y or WSi.sub.x N.sub.y O.sub.z) to form a W/barrier/poly stack gate structure. The barrier layer blocks reaction between W and Si, enhances sheet resistance, enhances adhesion between the W and the poly, and is stable at high temperatures.
摘要翻译：一种用于在金属 - 栅极堆叠栅极结构中在W和多晶之间形成导电阻挡层的金属 - 多晶堆叠栅极结构和相关联的方法。该方法包括在衬底上沉积掺杂硅的步骤; 在沉积的硅上形成氮化物; 在氮化物上沉积金属以形成金属/氮化物/沉积的硅堆叠; 并且对叠层进行热处理以将氮化物转变成金属和沉积的硅之间的导电阻挡层。热处理将氮化物层（SiN x或SiN x O y）转换成导电屏障（WSixNy或WSixNyOz）以形成W /势垒/多晶堆叠栅极结构。阻挡层阻止W和Si之间的反应，增强了薄层电阻，增强了W和聚硅之间的粘附性，并且在高温下是稳定的。

9. 发明申请

US20120234238A1 INTEGRATED METROLOGY FOR WAFER SCREENING 审中-公开
标题翻译：用于筛选筛选的综合方程
公开(公告)号：US20120234238A1
公开(公告)日：2012-09-20
申请号：US13419121
申请日：2012-03-13
申请人： Wei-Yung Hsu , Hua Chung , Ting-Ruei Shiu , Jie Cui
发明人： Wei-Yung Hsu , Hua Chung , Ting-Ruei Shiu , Jie Cui
IPC分类号： C23C16/52 , G01N3/00
CPC分类号： G01N3/20 , G01N3/068 , G01N3/12 , G01N2203/0282 , H01L21/67109 , H01L21/67115 , H01L21/67207 , H01L21/67288 , H01L21/67754 , H01L21/68764 , H01L21/68771
摘要： Integrated wafer or substrate bow measurement modules are described. For example, a multi-chamber system includes a chamber housing a bow measurement module. In another example, a method of pre-screening a wafer includes inserting a wafer or a substrate into a multi-chamber system. A bow parameter of the wafer or the substrate is measured in a bow measurement module housed in a chamber of the multi-chamber system.
摘要翻译：描述了集成的晶片或衬底弓测量模块。例如，多室系统包括容纳弓测量模块的腔室。在另一示例中，预筛选晶片的方法包括将晶片或基板插入多室系统中。在容纳在多室系统的室中的弓测量模块中测量晶片或基板的弓形参数。

10. 发明申请

US20110253685A1 LASER PROCESSING SYSTEM WITH VARIABLE BEAM SPOT SIZE 审中-公开
标题翻译：具有可变光束尺寸的激光加工系统
公开(公告)号：US20110253685A1
公开(公告)日：2011-10-20
申请号：US13076422
申请日：2011-03-30
申请人： Wei-Yung Hsu , Antoine P. Manens
发明人： Wei-Yung Hsu , Antoine P. Manens
IPC分类号： B23K26/00
CPC分类号： B23K26/046 , B23K26/364 , B23K26/40 , B23K2103/16 , B23K2103/42 , B23K2103/50
摘要： Systems for scribing a workpiece incorporate a motorized beam expander to change a laser beam spot size incident on a workpiece. A system includes a frame, a laser coupled with the frame and generating an output to remove material from at least a portion of a workpiece, a beam expander positioned along a path of the laser output and having a motorized mechanism operable to vary a beam expansion ratio applied to the laser output, and at least one scanning device coupled with the frame and operable to control a position of the laser output, after expansion, on the workpiece. The motorized beam expander can be used to selectively vary the width of a laser beam supplied to a scanning device so as to selectively vary the size of the laser beam incident on the workpiece. Alternatively, a variable aperture can be used instead of a beam expander.
摘要翻译：用于对工件进行划线的系统包括电动束扩张器以改变入射在工件上的激光束斑点尺寸。一种系统包括框架，激光器与框架耦合并且产生输出以从工件的至少一部分移除材料;沿着激光输出路径定位的光束扩展器，并具有可操作以改变光束膨胀的电动机构以及至少一个与框架耦合的扫描装置，并可操作以控制激光输出在膨胀之后在工件上的位置。电动光束扩展器可以用于选择性地改变提供给扫描装置的激光束的宽度，以便选择性地改变入射在工件上的激光束的尺寸。或者，可以使用可变光圈来代替光束扩展器。

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