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    • 6. 发明授权
    • High temperature superconducting magnetic bearings
    • 高温超导磁性轴承
    • US5177387A
    • 1993-01-05
    • US625988
    • 1990-12-04
    • Chase K. McMichaelWei-Kan Chu
    • Chase K. McMichaelWei-Kan Chu
    • H02K7/09F16C32/04F16C39/06
    • F16C32/0438
    • A magnetic bearing having a rotatable member and a stationary member on one of which is mounted a superconductor while on the other is mounted a set of permanent magnets or electromagnets arranged as a quadrupole or multiple dipoles. The magnetic member, which is in the form of a dipole, a quadrupole, or other multiple dipole, such as an octopole, is positioned to enable the magnetic fields generated by the permanent magnets to interact with the superconducting material and to confine the shaft in all directions in the desired location. The bearing systems can be used as either a thrust bearing or as a journal bearing, or as both. Each dipole may be twinned to reduce magnetic field asymmetry and reduce energy dissipation upon rotation. The superconductor may be laminated, and/or additional magnets may be located outside the superconductor in order to increase the bearing stiffness and rigidity.
    • 具有可旋转构件和固定构件的磁性轴承安装有超导体,而另一个固定构件安装了一组布置为四极或多个偶极子的永磁体或电磁体。 位于偶极子,四极或其它多偶极子(例如八极管)形式的磁性部件被定位成使得由永磁体产生的磁场能够与超导材料相互作用并将轴限制在 所有方向在所需位置。 轴承系统可用作推力轴承或轴颈轴承,也可用作两者。 每个偶极子可以配对以减小磁场不对称性并且减少旋转时的能量耗散。 可以层叠超导体,和/或可以将额外的磁体定位在超导体外部,以便增加轴承刚度和刚性。
    • 9. 发明申请
    • Method to overcome instability of ultra-shallow semiconductor junctions
    • 克服超浅半导体结的不稳定性的方法
    • US20050260836A1
    • 2005-11-24
    • US10523127
    • 2003-07-17
    • Wei-Kan ChuLin ShaoJiarui Liu
    • Wei-Kan ChuLin ShaoJiarui Liu
    • H01L21/04H01L21/265H01L21/268H01L21/324H01L21/425
    • H01L21/26513H01L21/2658H01L21/268H01L21/324
    • A method of forming a stable unction on a microelectronic structure on a semiconductor wafer having a silicon surface layer on a substrate includes the following steps: implanting dopant ions into the surface layer; cleaning and oxidizing the surface layer, and twice annealing the wafer to recover a damaged silicon crystal structure of the surface layer resulting from the low energy ion implantation. The first annealing process uses a temperature range of 800° C. to 1200° C. for a duration from about a fraction of a second to less than about 1000 seconds, with a ramp-up rate of about 50° C./second to about 1000° C./second. The second annealing process uses a temperature range of 400° C. to 650° C. for a time period of from about 1 second to about 10 hours, and more preferably, from about 60 seconds to about 1 hour. Both annealing processes include cooling processes.
    • 在衬底上具有硅表面层的半导体晶片上的微电子结构上形成稳定的电荷的方法包括以下步骤:将掺杂剂离子注入到表面层中; 清洁和氧化表面层,并对晶片进行两次退火,以回收由低能离子注入产生的表面层损坏的硅晶体结构。 第一退火工艺使用800℃至1200℃的温度范围,持续时间约为几分之一秒至小于约1000秒,斜坡上升速率为约50℃/秒至 约1000℃/秒。 第二退火方法使用400℃至650℃的温度范围约1秒至约10小时,更优选约60秒至约1小时。 退火过程都包括冷却过程。