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1. 发明申请

US20090162570A1 APPARATUS AND METHOD FOR PROCESSING A SUBSTRATE USING INDUCTIVELY COUPLED PLASMA TECHNOLOGY 审中-公开
标题翻译：使用电感耦合等离子体技术处理基板的装置和方法
公开(公告)号：US20090162570A1
公开(公告)日：2009-06-25
申请号：US11960111
申请日：2007-12-19
申请人： Johanes F. Swenberg , Wei Liu , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini , Michael J. Mark , Theresa Kramer Guarini , Woong Choi
发明人： Johanes F. Swenberg , Wei Liu , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini , Michael J. Mark , Theresa Kramer Guarini , Woong Choi
IPC分类号： H05H1/24 , C23C16/503
CPC分类号： H01J37/321 , H01J37/3211 , H01J37/32174
摘要： The present invention generally provides apparatus and methods for processing a semiconductor substrate. Particularly, the present invention provides an inductively coupled plasma reactor having improved process uniformity. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a process volume configured to process the substrate therein, an adjustable coil assembly coupled to the chamber body outside the process volume, a supporting pedestal disposed in the process volume and configured to support the substrate therein, and a gas injection assembly configured to supply a process gas towards a first process zone and a second process zone independently.
摘要翻译：本发明通常提供了用于处理半导体衬底的装置和方法。特别地，本发明提供了具有改进的工艺均匀性的电感耦合等离子体反应器。本发明的一个实施例提供了一种用于处理衬底的装置，其包括限定被配置为在其中处理衬底的处理体积的室主体，耦合到处理体积外部的室主体的可调节线圈组件，设置在处理体积中的支撑座并且被配置为在其中支撑衬底;以及气体注入组件，其构造成独立地朝向第一处理区域和第二处理区域提供处理气体。

2. 发明授权

US08999106B2 Apparatus and method for controlling edge performance in an inductively coupled plasma chamber 有权
标题翻译：用于控制电感耦合等离子体室中边缘性能的装置和方法
公开(公告)号：US08999106B2
公开(公告)日：2015-04-07
申请号：US11960300
申请日：2007-12-19
申请人： Wei Liu , Johanes F. Swenberg , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini , Michael J. Mark
发明人： Wei Liu , Johanes F. Swenberg , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini , Michael J. Mark
IPC分类号： C23C16/50 , C23C16/00 , C23F1/00 , H01L21/306 , H01L21/687 , H01J37/32 , H01L21/67
CPC分类号： H01L21/68742 , H01J37/321 , H01J37/32623 , H01L21/67069 , H01L21/68735
摘要： The present invention generally provides methods and apparatus for controlling edge performance during process. One embodiment of the present invention provides an apparatus comprising a chamber body defining a process volume, a gas inlet configured to flow a process gas into the process volume, and a supporting pedestal disposed in the process volume. The supporting pedestal comprises a top plate having a substrate supporting surface configured to receive and support the substrate on a backside, and an edge surface configured to circumscribe the substrate along an outer edge of the substrate, and a height difference between a top surface of the substrate and the edge surface is used to control exposure of an edge region of the substrate to the process gas.
摘要翻译：本发明总体上提供了用于在处理过程中控制边缘性能的方法和装置。本发明的一个实施例提供了一种装置，其包括限定处理体积的室主体，被配置为将处理气体流入处理体积的气体入口以及设置在处理体积中的支撑基座。支撑基座包括具有基板支撑表面的顶板，该基板支撑表面被配置为在背面上接收和支撑基板;以及边缘表面，其被构造成沿着基板的外边缘围绕基板，以及在基板的顶表面之间的高度差基板和边缘表面用于控制基板的边缘区域对处理气体的曝光。

3. 发明申请

US20090162952A1 APPARATUS AND METHOD FOR CONTROLLING EDGE PERFORMANCE IN AN INDUCTIVELY COUPLED PLASMA CHAMBER 有权
标题翻译：用于控制电感耦合等离子体室的边缘性能的装置和方法
公开(公告)号：US20090162952A1
公开(公告)日：2009-06-25
申请号：US11960300
申请日：2007-12-19
申请人： Wei Liu , Johanes F. Swenberg , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini , Michael J. Mark
发明人： Wei Liu , Johanes F. Swenberg , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini , Michael J. Mark
IPC分类号： H01L21/66 , C23C16/513
CPC分类号： H01L21/68742 , H01J37/321 , H01J37/32623 , H01L21/67069 , H01L21/68735
摘要： The present invention generally provides methods and apparatus for controlling edge performance during process. One embodiment of the present invention provides an apparatus comprising a chamber body defining a process volume, a gas inlet configured to flow a process gas into the process volume, and a supporting pedestal disposed in the process volume. The supporting pedestal comprises a top plate having a substrate supporting surface configured to receive and support the substrate on a backside, and an edge surface configured to circumscribe the substrate along an outer edge of the substrate, and a height difference between a top surface of the substrate and the edge surface is used to control exposure of an edge region of the substrate to the process gas.
摘要翻译：本发明总体上提供了用于在处理过程中控制边缘性能的方法和装置。本发明的一个实施例提供了一种装置，其包括限定处理体积的室主体，被配置为将处理气体流入处理体积的气体入口以及设置在处理体积中的支撑基座。支撑基座包括具有基板支撑表面的顶板，该基板支撑表面被配置为在背面上接收和支撑基板;以及边缘表面，其被构造成沿着基板的外边缘围绕基板，以及在基板的顶表面之间的高度差基板和边缘表面用于控制基板的边缘区域对处理气体的曝光。

4. 发明授权

US08062472B2 Method of correcting baseline skew by a novel motorized source coil assembly 有权
标题翻译：通过新颖的电动源线圈组件校正基线偏斜的方法
公开(公告)号：US08062472B2
公开(公告)日：2011-11-22
申请号：US11960246
申请日：2007-12-19
申请人： Wei Liu , Johanes F. Swenberg , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini
发明人： Wei Liu , Johanes F. Swenberg , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/321 , H01J37/3211 , H01J37/32174
摘要： The present invention generally provides apparatus and method for adjusting plasma density distribution in an inductively coupled plasma chamber. One embodiment of the present invention provides an apparatus configured for processing a substrate. The apparatus comprises a chamber body defining a process volume configured to process the substrate therein, and a coil assembly coupled to the chamber body outside the process volume, wherein the coil assembly comprises a coil mounting plate, a first coil antenna mounted on the coil mounting plate, and a coil adjusting mechanism configured to adjust the alignment of the first coil antenna relative to the process volume.
摘要翻译：本发明通常提供了用于调整电感耦合等离子体室中的等离子体密度分布的装置和方法。本发明的一个实施例提供了一种被配置用于处理衬底的装置。该装置包括限定被配置成在其中处理衬底的处理体积的室主体和耦合到处理体积外的室主体的线圈组件，其中线圈组件包括线圈安装板，安装在线圈安装件上的第一线圈天线板和线圈调整机构，被配置为调节第一线圈天线相对于处理体积的对准。

5. 发明申请

US20090159425A1 METHOD OF CORRECTING BASELINE SKEW BY A NOVEL MOTORIZED SOURCE COIL ASSEMBLY 有权
标题翻译：通过新型电动机线圈组件校正基线的方法
公开(公告)号：US20090159425A1
公开(公告)日：2009-06-25
申请号：US11960246
申请日：2007-12-19
申请人： Wei Liu , Johanes F. Swenberg , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini
发明人： Wei Liu , Johanes F. Swenberg , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini
IPC分类号： H05H1/24
CPC分类号： H01J37/321 , H01J37/3211 , H01J37/32174
摘要： The present invention generally provides apparatus and method for adjusting plasma density distribution in an inductively coupled plasma chamber. One embodiment of the present invention provides an apparatus configured for processing a substrate. The apparatus comprises a chamber body defining a process volume configured to process the substrate therein, and a coil assembly coupled to the chamber body outside the process volume, wherein the coil assembly comprises a coil mounting plate, a first coil antenna mounted on the coil mounting plate, and a coil adjusting mechanism configured to adjust the alignment of the first coil antenna relative to the process volume.
摘要翻译：本发明通常提供了用于调整电感耦合等离子体室中的等离子体密度分布的装置和方法。本发明的一个实施例提供了一种被配置用于处理衬底的装置。该装置包括限定被配置成在其中处理衬底的处理体积的室主体和耦合到处理体积外的室主体的线圈组件，其中线圈组件包括线圈安装板，安装在线圈安装件上的第一线圈天线板和线圈调整机构，被配置为调节第一线圈天线相对于处理体积的对准。

6. 发明授权

US08137463B2 Dual zone gas injection nozzle 有权
标题翻译：双区气体喷嘴
公开(公告)号：US08137463B2
公开(公告)日：2012-03-20
申请号：US11960166
申请日：2007-12-19
申请人： Wei Liu , Johanes S. Swenberg , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini
发明人： Wei Liu , Johanes S. Swenberg , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01J37/3244 , H01J37/32449
摘要： The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.
摘要翻译：本发明总体上提供了用于处理衬底的装置和方法。特别地，本发明提供了获得处理气体的期望分布的装置和方法。本发明的一个实施例提供一种用于处理衬底的装置，其包括具有第一流体路径的注射喷嘴，所述第一流体路径包括构造成接收流体输入的第一入口和与第一入口连接的多个第一注入口，其中，第一注入口构造成将流体从第一入口引向处理容积的第一区域，并且第二流体路径包括构造成接收流体输入的第二入口和与第二入口连接的多个第二注入口，其中所述第二注射端口被配置为将流体从所述第二入口引导到所述处理体积的第二区域。

7. 发明申请

US20090159424A1 DUAL ZONE GAS INJECTION NOZZLE 有权
标题翻译：双区气体喷射喷嘴
公开(公告)号：US20090159424A1
公开(公告)日：2009-06-25
申请号：US11960166
申请日：2007-12-19
申请人： Wei Liu , Johanes S. Swenberg , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini
发明人： Wei Liu , Johanes S. Swenberg , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini
IPC分类号： H05H1/24 , B01J19/08
CPC分类号： H01J37/3244 , H01J37/32449
摘要： The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.
摘要翻译：本发明总体上提供了用于处理衬底的装置和方法。特别地，本发明提供了获得处理气体的期望分布的装置和方法。本发明的一个实施例提供一种用于处理衬底的装置，其包括具有第一流体路径的注射喷嘴，所述第一流体路径包括构造成接收流体输入的第一入口和与第一入口连接的多个第一注入口，其中，第一注入口构造成将流体从第一入口引向处理容积的第一区域，并且第二流体路径包括构造成接收流体输入的第二入口和与第二入口连接的多个第二注入口，其中所述第二注射端口被配置为将流体从所述第二入口引导到所述处理体积的第二区域。

8. 发明申请

US20120164845A1 DUAL ZONE GAS INJECTION NOZZLE 审中-公开
标题翻译：双区气体喷射喷嘴
公开(公告)号：US20120164845A1
公开(公告)日：2012-06-28
申请号：US13415753
申请日：2012-03-08
申请人： Wei Liu , Johanes S. Swenberg , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini
发明人： Wei Liu , Johanes S. Swenberg , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini
IPC分类号： H01L21/318 , H01L21/263
CPC分类号： H01J37/3244 , H01J37/32449
摘要： The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.
摘要翻译：本发明总体上提供了用于处理衬底的装置和方法。特别地，本发明提供了获得处理气体的期望分布的装置和方法。本发明的一个实施例提供一种用于处理衬底的装置，其包括具有第一流体路径的注射喷嘴，所述第一流体路径包括构造成接收流体输入的第一入口和与第一入口连接的多个第一注入口，其中，第一注入口构造成将流体从第一入口引向处理容积的第一区域，并且第二流体路径包括构造成接收流体输入的第二入口和与第二入口连接的多个第二注入口，其中所述第二注射端口被配置为将流体从所述第二入口引导到所述处理体积的第二区域。

9. 发明授权

US09206512B2 Gas distribution system 有权
标题翻译：燃气分配系统
公开(公告)号：US09206512B2
公开(公告)日：2015-12-08
申请号：US13528906
申请日：2012-06-21
申请人： Hanh D. Nguyen , Majeed A. Foad , Dieter Haas , Karl J. Armstrong , Xiaoxiong Yuan
发明人： Hanh D. Nguyen , Majeed A. Foad , Dieter Haas , Karl J. Armstrong , Xiaoxiong Yuan
IPC分类号： C23C16/455 , F17D1/00
CPC分类号： C23C16/455 , C23C16/45565 , F17D1/00 , Y10T137/8593
摘要： In some embodiments, a gas distribution system may include a body disposed within a through hole formed in a process chamber body, the body comprising an opening, wherein an outer surface of the body is disposed a first distance from an inner surface of the through hole to form a first gap; a flange disposed proximate a first end of the body, the flange having an outer dimension greater than an inner dimension of the through hole; a showerhead disposed proximate a second end of the body opposite the first end and extending outwardly from the body to overlap a portion of the process chamber body, the showerhead configured to allow a flow of gas to an inner volume of the process chamber, wherein an outer surface of the showerhead is disposed a second distance from an inner surface of the process chamber body to form a second gap.
摘要翻译：在一些实施例中，气体分配系统可以包括设置在形成在处理室主体中的通孔内的主体，主体包括开口，其中主体的外表面与通孔的内表面第一距离设置形成第一个差距; 靠近所述主体的第一端设置的凸缘，所述凸缘具有大于所述通孔的内部尺寸的外部尺寸; 淋浴头，其设置在所述主体的与所述第一端相对的第二端附近并且从所述主体向外延伸以与所述处理室主体的一部分重叠，所述喷头构造成允许气体流动到所述处理室的内部容积，其中，淋浴喷头的外表面与处理室主体的内表面设置成第二距离，以形成第二间隙。

10. 发明申请

US20110011338A1 FLOW CONTROL FEATURES OF CVD CHAMBERS 有权
标题翻译： CVD气泡流量控制特征
公开(公告)号：US20110011338A1
公开(公告)日：2011-01-20
申请号：US12836726
申请日：2010-07-15
申请人： Kien N. Chuc , Qiwei Liang , Hanh D. Nguyen , Xinglong Chen , Matthew Miller , Soonam Park , Toan Q. Tran , Adib Khan , Jang-Gyoo Yang , Dmitry Lubomirsky , Shankar Venkataraman
发明人： Kien N. Chuc , Qiwei Liang , Hanh D. Nguyen , Xinglong Chen , Matthew Miller , Soonam Park , Toan Q. Tran , Adib Khan , Jang-Gyoo Yang , Dmitry Lubomirsky , Shankar Venkataraman
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/452 , C23C16/45574 , H01J37/3244 , H01J37/32449 , Y10T137/85938
摘要： Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.
摘要翻译：提供了用于气体分配组件的装置和方法。一方面，提供了一种气体分配组件，包括环形体，该环形体包括具有内环形壁，外壁，上表面和底表面的环形环，形成在上表面中的上凹部，以及形成位于所述内部环形壁中的位于所述上部凹部中的上板，包括具有穿过其形成的多个第一孔的盘状体和位于所述座上的底板，所述底板包括具有多个第二孔的盘状体通过其形成的孔与第一孔对准，以及形成在第二孔之间并穿过底板的多个第三孔，底板密封地联接到上板，以将多个第一和第二孔与多个第三孔。

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