会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 9. 发明授权
    • Method manifesting a wide process window and using hexafluoropropane or
other hydrofluoropropanes to selectively etch oxide
    • 表现出广泛的工艺窗口并使用六氟丙烷或其他氢氟丙烷来选择性地蚀刻氧化物的方法
    • US6074959A
    • 2000-06-13
    • US964504
    • 1997-11-05
    • Ruiping WangGerald Z. YinRobert W. WuJian Ding
    • Ruiping WangGerald Z. YinRobert W. WuJian Ding
    • H01L21/311H01L21/302
    • H01L21/31116
    • A plasma etch process, particularly applicable to a self-aligned contact etch or other advanced structures requiring high-selectivity to nitride or other non-oxide materials and no etch stop. The process is preferably performed in a high-density plasma reactor for etching holes with either high or low aspect rations. In this process, hexafluoropropane (C.sub.3 H.sub.2 F.sub.6) is the principal etching gas in the presence of a substantial amount of an inactive gas such as argon. The process can also be used with the closely related gases heptafluoropropane (C.sub.3 HF.sub.7) and pentafluoropropane (C.sub.3 H.sub.3 F.sub.5). The process may use one or more of the these gases in proportions to optimize selectivity over other materials without the occurrence of etch stop in narrow contact holes and with a wide process window. Difluoromethane (CH.sub.2 F.sub.2) or other fluorocarbons may be combined with the above gases for optimum selectivity for a design of a specific contact feature.
    • 等离子体蚀刻工艺,特别适用于需要对氮化物或其他非氧化物材料进行高选择性且无蚀刻停止的自对准接触蚀刻或其他高级结构。 该方法优选在高密度等离子体反应器中进行,用于蚀刻具有高或低纵横比的孔。 在该方法中,六氟丙烷(C 3 H 2 F 6)是在大量惰性气体如氩气存在下的主蚀刻气体。 该方法也可与紧密相关的气体七氟丙烷(C 3 H F 7)和五氟丙烷(C 3 H 3 F 5)一起使用。 该方法可以使用一种或多种这些气体的比例来优化比其它材料的选择性,而不会在狭窄的接触孔中和在宽的工艺窗口中发生蚀刻停止。 二氟甲烷(CH 2 F 2)或其它碳氟化合物可与上述气体组合,以获得特定接触特征设计的最佳选择性。