专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US6074959A Method manifesting a wide process window and using hexafluoropropane or other hydrofluoropropanes to selectively etch oxide 失效
标题翻译：表现出广泛的工艺窗口并使用六氟丙烷或其他氢氟丙烷来选择性地蚀刻氧化物的方法
公开(公告)号：US6074959A
公开(公告)日：2000-06-13
申请号：US964504
申请日：1997-11-05
申请人： Ruiping Wang , Gerald Z. Yin , Robert W. Wu , Jian Ding
发明人： Ruiping Wang , Gerald Z. Yin , Robert W. Wu , Jian Ding
IPC分类号： H01L21/311 , H01L21/302
CPC分类号： H01L21/31116
摘要： A plasma etch process, particularly applicable to a self-aligned contact etch or other advanced structures requiring high-selectivity to nitride or other non-oxide materials and no etch stop. The process is preferably performed in a high-density plasma reactor for etching holes with either high or low aspect rations. In this process, hexafluoropropane (C.sub.3 H.sub.2 F.sub.6) is the principal etching gas in the presence of a substantial amount of an inactive gas such as argon. The process can also be used with the closely related gases heptafluoropropane (C.sub.3 HF.sub.7) and pentafluoropropane (C.sub.3 H.sub.3 F.sub.5). The process may use one or more of the these gases in proportions to optimize selectivity over other materials without the occurrence of etch stop in narrow contact holes and with a wide process window. Difluoromethane (CH.sub.2 F.sub.2) or other fluorocarbons may be combined with the above gases for optimum selectivity for a design of a specific contact feature.
摘要翻译：等离子体蚀刻工艺，特别适用于需要对氮化物或其他非氧化物材料进行高选择性且无蚀刻停止的自对准接触蚀刻或其他高级结构。该方法优选在高密度等离子体反应器中进行，用于蚀刻具有高或低纵横比的孔。在该方法中，六氟丙烷（C 3 H 2 F 6）是在大量惰性气体如氩气存在下的主蚀刻气体。该方法也可与紧密相关的气体七氟丙烷（C 3 H F 7）和五氟丙烷（C 3 H 3 F 5）一起使用。该方法可以使用一种或多种这些气体的比例来优化比其它材料的选择性，而不会在狭窄的接触孔中和在宽的工艺窗口中发生蚀刻停止。二氟甲烷（CH 2 F 2）或其它碳氟化合物可与上述气体组合，以获得特定接触特征设计的最佳选择性。

2. 发明授权

US06183655B2 Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon 失效
标题翻译：使用氟丙烯和氢氟烃选择性地蚀刻氧化物的可调谐方法
公开(公告)号：US06183655B2
公开(公告)日：2001-02-06
申请号：US09049862
申请日：1998-03-27
申请人： Ruiping Wang , Gerald Z. Yin , Robert W. Wu , Jian Ding
发明人： Ruiping Wang , Gerald Z. Yin , Robert W. Wu , Jian Ding
IPC分类号： C03C2568
CPC分类号： H01L21/31116
摘要： A plasma etch process, particularly applicable to a self-aligned contact etch or other advanced structures requiring high-selectivity to nitride or other non-oxide materials and producing no etch stop. The process is preferably performed in a high-density plasma reactor for etching holes with either high or low aspect rations. In this process, hexafluoropropylene (C3F6) is the principal etching gas and another hydrofluorocarbon such as CH2F2 or C3H2F6 is added at least in part for its polymer-forming ability, which increases selectivity of etching oxide to nitride. The process gas also includes a substantial amount of an inactive gas such as argon. The process gas mixture can be balanced between the active etching gas and the polymer former in proportions to optimize selectivity over other materials without the occurrence of etch stop in narrow contact holes and with a wide process window.
摘要翻译：等离子体蚀刻工艺，特别适用于需要对氮化物或其他非氧化物材料的高选择性并且不产生蚀刻停止的自对准接触蚀刻或其它高级结构。该方法优选在高密度等离子体反应器中进行，用于蚀刻具有高或低纵横比的孔。在该方法中，六氟丙烯（C 3 F 6）是主要的蚀刻气体，并且至少部分地由于其聚合物形成能力而添加另一种氢氟烃，例如CH 2 F 2或C 3 H 2 F 6，这增加了蚀刻氧化物对氮化物的选择性。工艺气体还包括大量惰性气体如氩气。工艺气体混合物可以在有效蚀刻气体和聚合物成型剂之间以比例平衡，以优于其它材料的选择性，而不会在狭窄的接触孔和宽的工艺窗口中发生蚀刻停止。

3. 发明授权

US06361705B1 Plasma process for selectively etching oxide using fluoropropane or fluoropropylene 有权
标题翻译：使用氟丙烷或氟丙烯选择性蚀刻氧化物的等离子体方法
公开(公告)号：US06361705B1
公开(公告)日：2002-03-26
申请号：US09259536
申请日：1999-03-01
申请人： Ruiping Wang , Gerald Z. Yin , Hao A. Lu , Robert W. Wu , Jian Ding
发明人： Ruiping Wang , Gerald Z. Yin , Hao A. Lu , Robert W. Wu , Jian Ding
IPC分类号： H01L21316
CPC分类号： H01L21/31116
摘要： A plasma etch process, particularly applicable to an self-aligned contact etch in a high-density plasma for selectively etching oxide over nitride, although selectivity to silicon is also achieved. In the process, a fluoropropane or a fluoropropylene is a principal etching gas in the presence of a substantial amount of an inactive gas such as argon. Good nitride selectivity has been achieved with hexafluoropropylene (C3F6), octafluoropropane (C3F8), heptafluoropropane (C3HF7), hexafluoropropane (C3H2F6). The process may use one or more of the these gases in proportions to optimize selectivity and a wide process window. Difluoromethane (CH2F2) or other fluorocarbons may be combined with the above gases, particularly with C3F6 for optimum selectivity over other materials without the occurrence of etch stop in narrow contact holes and with a wide process window.
摘要翻译：等离子体蚀刻工艺，特别适用于高密度等离子体中的自对准接触蚀刻，用于选择性地蚀刻氮化物上的氧化物，尽管也可以实现对硅的选择性。在此过程中，氟丙烷或氟丙烯是在大量惰性气体如氩气存在下的主要蚀刻气体。使用六氟丙烯（C 3 F 6），八氟丙烷（C 3 F 8），七氟丙烷（C 3 H F 7），六氟丙烷（C 3 H 2 F 6）已经实现了良好的氮化物选择性。该方法可以使用一种或多种这些气体的比例来优化选择性和宽的工艺窗口。二氟甲烷（CH 2 F 2）或其它碳氟化合物可以与上述气体，特别是与C3F6组合，以优于其他材料的选择性，而不会在狭窄的接触孔和宽的工艺窗口中发生蚀刻停止。

4. 发明授权

US06174451B1 Oxide etch process using hexafluorobutadiene and related unsaturated hydrofluorocarbons 失效
标题翻译：使用六氟丁二烯和相关不饱和氢氟烃的氧化物蚀刻工艺
公开(公告)号：US06174451B1
公开(公告)日：2001-01-16
申请号：US09193056
申请日：1998-11-16
申请人： Raymond Hung , Joseph P. Caulfield , Hongching Shan , Ruiping Wang , Gerald Z. Yin
发明人： Raymond Hung , Joseph P. Caulfield , Hongching Shan , Ruiping Wang , Gerald Z. Yin
IPC分类号： H01L2131
CPC分类号： H01L21/31116
摘要： An oxide etching process, particular useful for selectively etching oxide over a feature having a non-oxide composition, such as silicon nitride and especially when that feature has a corner that is prone to faceting during the oxide etch. The invention uses one of three unsaturated 3- and 4-carbon fluorocarbons, specifically hexafluorobutadiene (C4F6), pentafluoropropylene (C3HF5), and trifluoropropyne (C3HF3), all of which have boiling points below 10° C. and are commercially available. The unsaturated hydrofluorocarbon together with argon is excited into a high-density plasma in a reactor which inductively couples plasma source power into the chamber and RF biases the pedestal electrode supporting the wafer. Preferably, a two-step etch is used process is used in which the above etching gas is used in the main step to provide a good vertical profile and a more strongly polymerizing fluorocarbon such as difluoromethane (CH2F2) is added in the over etch to protect the nitride corner.
摘要翻译：一种氧化物蚀刻工艺，特别用于在具有非氧化物组成的特征（例如氮化硅）上选择性地蚀刻氧化物，特别是当该特征具有在氧化物蚀刻期间易于刻面的拐角时。本发明使用沸点低于10℃的三种不饱和3-和4-碳碳氟化合物，特别是六氟丁二烯（C 4 F 6），五氟丙烯（C 3 HF 5）和三氟丙炔（C 3 H 3 F 3）中的一种，并且可商购。将不饱和氢氟烃与氩一起激发成反应器中的高密度等离子体，其将等离子体源功率感应耦合到室中，并且RF偏置支撑晶片的基座电极。优选地，使用两步蚀刻方法，其中在主要步骤中使用上述蚀刻气体以提供良好的垂直分布，并且在过蚀刻中加入更强的聚合碳氟化合物如二氟甲烷（CH 2 F 2）以保护氮化物角。

5. 发明授权

US06613691B1 Highly selective oxide etch process using hexafluorobutadiene 失效
标题翻译：使用六氟丁二烯的高选择性氧化物蚀刻工艺
公开(公告)号：US06613691B1
公开(公告)日：2003-09-02
申请号：US09675360
申请日：2000-09-29
申请人： Raymond Hung , Joseph P. Caulfield , Hongching Shan , Ruiping Wang , Gerald Z. Yin
发明人： Raymond Hung , Joseph P. Caulfield , Hongching Shan , Ruiping Wang , Gerald Z. Yin
IPC分类号： H01L21475
CPC分类号： H01L21/31116
摘要： An oxide etching process, particular useful for selectively etching oxide over a feature having a non-oxide composition, such as silicon nitride and especially when that feature has a corner that is prone to faceting during the oxide etch. The invention preferably uses the unsaturated 4-carbon fluorocarbons, specifically hexafluorobutadiene (C4F6), which has a below 10°C. and is commercially available. The hexafluorobutadiene together with argon is excited into a high-density plasma in a reactor which inductively couples plasma source power into the chamber and RF biases the pedestal electrode supporting the wafer. Preferably, a two-step etch is used process is used in which the above etching gas is used in the main step to provide a good vertical profile and a more strongly polymerizing fluorocarbon such as difluoromethane (CH2F2) is added in the over etch to protect the nitride corner.
摘要翻译：一种氧化物蚀刻工艺，特别用于在具有非氧化物组成的特征（例如氮化硅）上选择性地蚀刻氧化物，特别是当该特征具有在氧化物蚀刻期间易于刻面的拐角时。本发明优选使用低于10℃的不饱和4-碳碳氟化合物，特别是六氟丁二烯（C 4 F 6）。并且是可商购的。将六氟丁二烯与氩一起激发成反应器中的高密度等离子体，其将等离子体源功率感应耦合到室中，并且RF偏置支撑晶片的基座电极。优选地，使用两步蚀刻方法，其中在主要步骤中使用上述蚀刻气体以提供良好的垂直分布，并且在过蚀刻中加入更强的聚合碳氟化合物如二氟甲烷（CH 2 F 2）以保护氮化物角。

6. 发明授权

US06602434B1 Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window 失效
标题翻译：使用六氟丁二烯或相关碳氟化合物蚀刻氧化物的方法，并呈现宽的工艺窗口
公开(公告)号：US06602434B1
公开(公告)日：2003-08-05
申请号：US09440810
申请日：1999-11-15
申请人： Hoiman (Raymond) Hung , Joseph P. Caulfield , Hongqing Shan , Ruiping Wang , Gerald Z. Yin
发明人： Hoiman (Raymond) Hung , Joseph P. Caulfield , Hongqing Shan , Ruiping Wang , Gerald Z. Yin
IPC分类号： H01L213065
CPC分类号： H01L21/31116
摘要： An oxide etching process, particularly useful for selectively etching oxide over a feature having a non-oxide composition, such as silicon nitride and especially when that feature has a corner that is prone to faceting during the oxide etch. One aspect of the invention uses one of four hydrogen-free fluorocarbons having a low F/C ratio, specifically hexafluorobutadiene (C4F6), octafluoropentadiene (C5F8), hexafluorocyclobutene (C4F6), and hexafluorobenzene (C6F6). At least hexafluorobutadiene has a boiling point below 10° C. and is commercially available. Another aspect of the invention, uses an unsaturated fluorocarbon such as pentafluoropropylene (C3HF5), and trifluoropropyne (C3HF3), both of which have boiling points below 10° C. and are commercially available. The fluorocarbon together with a substantial amount of a noble gas such as argon or xenon is excited into a high-density plasma in a reactor which inductively couples plasma source power into the chamber and RF biases the pedestal electrode supporting the wafer. Preferably, one of two two-step etch process is used. In the first, the source and bias power are reduced towards the end of the etch. In the second, the fluorocarbon is used in the main step to provide a good vertical profile and a more strongly polymerizing fluorocarbon such as difluoromethane (CH2F2) is added in the over etch to protect the nitride corner. The same chemistry can be used in a magnetically enhanced reactive ion etcher (MERIE), preferably with an even larger amount of argon.
摘要翻译：氧化物蚀刻工艺，特别适用于在具有非氧化物组成的特征（例如氮化硅）上选择性地蚀刻氧化物，特别是当该特征具有在氧化物蚀刻期间易于刻面的拐角时。本发明的一个方面使用具有低F / C比的四种无氢碳氟化合物之一，特别是六氟丁二烯（C 4 F 6），八氟戊二烯（C 5 F 8），六氟环丁烯（C 4 F 6）和六氟苯（C 6 F 6）。至少六氟丁二烯的沸点低于10℃，并且可商购。本发明的另一方面是使用沸点低于10℃的市售的不饱和氟烃如五氟丙烯（C3HF5）和三氟丙炔（C3HF3）。碳氟化合物与大量惰性气体如氩气或氙气一起被激发到电抗器中的高密度等离子体中，该电抗器将等离子体源功率感应耦合到腔室中，并且RF偏置支撑晶片的基座电极。优选地，使用两个两步蚀刻工艺中的一个。首先，源极和偏置功率在蚀刻结束时减小。第二，在主要步骤中使用碳氟化合物以提供良好的垂直分布，并且在过蚀刻中加入更强的聚合碳氟化合物如二氟甲烷（CH 2 F 2）以保护氮化物角。相同的化学成分可用于磁增强反应离子蚀刻剂（MERIE）中，优选具有甚至更大量的氩。

7. 发明授权

US06800213B2 Precision dielectric etch using hexafluorobutadiene 失效
标题翻译：使用六氟丁二烯的精密电介质蚀刻
公开(公告)号：US06800213B2
公开(公告)日：2004-10-05
申请号：US10165249
申请日：2002-06-07
申请人： Ji Ding , Hidehiro Kojiri , Yoshio Ishikawa , Keiji Horioka , Ruiping Wang , Robert W. Wu , Hoiman (Raymond) Hung
发明人： Ji Ding , Hidehiro Kojiri , Yoshio Ishikawa , Keiji Horioka , Ruiping Wang , Robert W. Wu , Hoiman (Raymond) Hung
IPC分类号： H01L213065
CPC分类号： H01L21/31116
摘要： An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2, preferably C4F6, an oxygen-containing gas such as O2 or CO, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.
摘要翻译：具有F / C比小于2，优选C4F6，含氧气体如O 2或CO，重质碳氟化合物或氢氟碳化合物的稀无机氟碳氟化合物和诸如Ar或Xe的稀有稀释气体的氧化物蚀刻配方。选择前三种气体的量，使得比值（FH）/（CO）至少为1.5且不大于2.或者，气体混合物可以包括重碳氟化合物，四氟化碳和稀释剂，其比例的前两个选择的比例F / C在1.5和2之间。

8. 发明授权

US06432318B1 Dielectric etch process reducing striations and maintaining critical dimensions 失效
标题翻译：电介质蚀刻工艺减少条纹并维持临界尺寸
公开(公告)号：US06432318B1
公开(公告)日：2002-08-13
申请号：US09506112
申请日：2000-02-17
申请人： Ji Ding , Hidehiro Kojiri , Yoshio Ishikawa , Keiji Horioka , Ruiping Wang , Robert W. Wu , Hoiman Hung
发明人： Ji Ding , Hidehiro Kojiri , Yoshio Ishikawa , Keiji Horioka , Ruiping Wang , Robert W. Wu , Hoiman Hung
IPC分类号： H01L213065
CPC分类号： H01L21/31116
摘要： An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2 such as C4F6 or C5F8, an oxygen-containing gas such as O2, CO or CO2, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.
摘要翻译：氧化物蚀刻配方包括F / C比小于2的重氢无碳氟化合物，例如C 4 F 6或C 5 F 8，含氧气体如O 2，CO或CO 2，较轻碳氟化合物或氢氟烃，以及稀有稀释气体作为Ar或Xe。选择前三种气体的量，使得比值（FH）/（CO）至少为1.5且不大于2.或者，气体混合物可以包括重碳氟化合物，四氟化碳和稀释剂，其比例的前两个被选择的比例F / C在1.5和2之间。

9. 发明授权

US08354038B2 Piezoelectric ceramic, and piezoelectric, dielectric or pyroelectric element using the same 有权
标题翻译：压电陶瓷，以及使用其的压电，电介质或热电元件
公开(公告)号：US08354038B2
公开(公告)日：2013-01-15
申请号：US12451495
申请日：2008-05-16
申请人： Ruiping Wang , Hiroshi Bando
发明人： Ruiping Wang , Hiroshi Bando
IPC分类号： C04B35/00
CPC分类号： C01G33/006 , C01G35/006 , C01P2006/10 , C01P2006/40 , C04B35/495 , C04B2235/3201 , C04B2235/3203 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3232 , C04B2235/3239 , C04B2235/3241 , C04B2235/3244 , C04B2235/3258 , C04B2235/3267 , C04B2235/3281 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/3298 , C04B2235/3418 , C04B2235/76 , C04B2235/765 , C04B2235/768 , C04B2235/77 , C04B2235/79 , C04B2235/85 , H01L37/025 , H01L41/1873
摘要： A piezoelectric solid solution composition containing, as a main component, a composition represented by the following general formula: {Mx(NayLizK1-y-z)1-x}1-m{(Ti1-u-vZruHfv)x(Nb1-wTaw)1-x}O3 is disclosed. In the formula, M represents a combination of at least one member selected from the group consisting of (Bi0.5K0.5), (Bi0.5Na0.5) and (Bi0.5Li0.5) and at least one member selected from the group consisting of Ba, Sr, Ca and Mg; and in the formula, x, y, z, u, v, w and m are in the following ranges: 0.06
摘要翻译：作为主要成分的压电固溶体组合物，含有以下通式表示的组成：{Mx（NayLizK1-yz）1-x} 1-m {（Ti1-u-vZruHfv）×（Nb1-wTaw）1 -x} O3。在该式中，M表示选自（Bi0.5K0.5），（Bi0.5Na0.5）和（Bi0.5Li0.5）中的至少一种的组合和选自由Ba，Sr，Ca和Mg组成的组; 在式中，x，y，z，u，v，w和m在以下范围内：0.06 n; 1，0＆nlE; v＆nlE; 0.75,0和nlE; w＆nlE; 0.2,0（u + v）＆nlE; 1和-0.06＆nlE; m＆nlE; 0.06。该固溶体组合物优选形成与PZT中相同的菱面体 - 四方晶形态相界，是环境友好的，并显示优异的压电常数d33。

10. 发明授权

US07153804B2 Catalyst component for ethylene polymerization, the preparation thereof and catalyst comprising the same 有权
标题翻译：用于乙烯聚合的催化剂组分，其制备方法和包含其的催化剂
公开(公告)号：US07153804B2
公开(公告)日：2006-12-26
申请号：US11104976
申请日：2005-04-12
申请人： Wei Chen , Zifang Guo , Junling Zhou , Hongxu Yang , Ruixia Li , Ruiping Wang , Yuexiang Liu , Hongtao Wang , Jingmei Zhang , Xiaojing Cheng
发明人： Wei Chen , Zifang Guo , Junling Zhou , Hongxu Yang , Ruixia Li , Ruiping Wang , Yuexiang Liu , Hongtao Wang , Jingmei Zhang , Xiaojing Cheng
IPC分类号： B01J31/00 , C08F4/44
CPC分类号： C08F10/00 , C08F110/02 , C08F4/651 , C08F4/6555 , C08F2500/12 , C08F2500/18 , C08F2500/24 , C08F4/025
摘要： The present invention provides a catalyst component for ethylene polymerization, a process for preparing the same, a catalyst comprising the same, and a process for polymerizing ethylene using the catalyst. The catalyst component comprises a reaction product, supported on an inorganic oxide support, of a magnesium complex, a titanium compound, an alcohol compound, and an organoaluminum compound, wherein said magnesium complex is formed by dissolving a magnesium halide in a solvent system comprising an organic epoxy compound and an organo phosphorus compound. The catalyst according to the invention is especially suitable for slurry phase polymerization of ethylene. The catalyst according to the present invention has high catalytic activity, and a good hydrogen response, with the resultant polymer having a more uniform particle size diameter and a narrow particle size distribution.
摘要翻译：本发明提供了用于乙烯聚合的催化剂组分，其制备方法，包含该催化剂组合物的催化剂，以及使用该催化剂使乙烯聚合的方法。催化剂组分包括负载在无机氧化物载体上的镁络合物，钛化合物，醇化合物和有机铝化合物的反应产物，其中所述镁络合物是通过将卤化镁溶解在包含有机环氧化合物和有机磷化合物。根据本发明的催化剂特别适用于乙烯的淤浆相聚合。根据本发明的催化剂具有高催化活性和良好的氢响应，所得聚合物具有更均匀的粒径直径和窄的粒度分布。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式