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    • 1. 发明授权
    • Methods for effective nickel silicide formation
    • 有效的硅化镍形成方法
    • US06339021B1
    • 2002-01-15
    • US09850992
    • 2001-05-09
    • Wee Leng TanKin Leong PeySimon Chooi
    • Wee Leng TanKin Leong PeySimon Chooi
    • H01L2144
    • H01L21/28518
    • Methods for forming a high quality nickel silicide film in the fabrication of an integrated circuit are described. A semiconductor substrate is provided having silicon regions to be silicided wherein a native oxide layer forms on the silicon regions. A nickel layer is deposited overlying the silicon regions to be silicided. A titanium layer is deposited overlying the nickel layer. The substrate is annealed whereby titanium atoms from the titanium layer diffuse through the nickel layer and react with the native oxide layer and whereby the nickel is transformed to nickel silicide where it overlies the silicon regions and wherein the nickel not overlying the silicon regions is unreacted. In an alternative method, a titanium nitride layer over the titanium layer traps atmospheric oxygen freeing all of the titanium in the titanium layer to react with the underlying native oxide. The unreacted nickel layer is removed to complete formation of a nickel silicide film in the manufacture of an integrated circuit. In another method, a monolayer of titanium is deposited by atomic layer chemical vapor deposition underlying the nickel layer. The substrate is annealed whereby titanium atoms from the titanium monolayer react with the native oxide layer and whereby the the nickel is transformed to nickel silicide.
    • 描述了在制造集成电路中形成高质量硅化镍膜的方法。 提供了具有要被硅化的硅区域的半导体衬底,其中在硅区域上形成自然氧化物层。 沉积在要被硅化的硅区域上的镍层。 沉积在镍层上的钛层。 退火基板,由此来自钛层的钛原子通过镍层扩散并与天然氧化物层反应,由此将镍转化为硅化镍,其中它覆盖在硅区域上,并且其中未覆盖硅区域的镍是未反应的。 在另一种方法中,钛层上方的氮化钛层捕获大气氧,释放钛层中的所有钛以与下面的天然氧化物反应。 去除未反应的镍层以在集成电路的制造中完成硅化镍膜的形成。 在另一种方法中,通过镍层下面的原子层化学气相沉积沉积单层的钛。 退火基板,由此钛单层的钛原子与天然氧化物层反应,由此将镍转化为硅化镍。