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    • 7. 发明授权
    • Self-repairing redundancy for memory blocks in programmable logic devices
    • 可编程逻辑器件中的存储器块的自修复冗余
    • US07216277B1
    • 2007-05-08
    • US10717040
    • 2003-11-18
    • Tony K. NgaiJennifer WongWayson J. Lowe
    • Tony K. NgaiJennifer WongWayson J. Lowe
    • G01R31/28G11C29/00
    • G11C29/44G11C29/4401G11C29/846
    • Programmable logic devices (PLDs) including self-repairing RAM circuits, and methods of automatically replacing defective columns in RAM arrays. A RAM circuit including redundant columns is tested during the PLD configuration sequence using a built in self test (BIST) procedure. If a defective column is detected, an error flag is stored in an associated volatile memory circuit. After the BIST procedure is complete, the PLD configuration process continues. The presence of the error flag causes the configuration data to bypass the defective column and to be passed directly into a replacement column. The configuration process continues until the remainder of the circuit is configured, including the redundant column. In other embodiments, the BIST procedure is initiated independently from the PLD configuration process. When a defective column is detected, user operation resumes with data being shunted from the defective column to a redundant column in a fashion transparent to the user.
    • 可编程逻辑器件(PLD),包括自修复RAM电路,以及自动替换RAM阵列中有缺陷的列的方法。 包括冗余列的RAM电路在PLD配置顺序期间使用内置的自检(BIST)过程进行测试。 如果检测到有缺陷的列,则错误标志被存储在相关联的易失性存储器电路中。 BIST程序完成后,PLD配置过程继续。 错误标志的存在导致配置数据绕过故障列,并直接传递到替换列。 配置过程继续,直到电路的其余部分被配置,包括冗余列。 在其他实施例中,独立于PLD配置过程启动BIST过程。 当检测到有缺陷的列时,以对用户透明的方式,将数据从有缺陷的列分流到冗余列的用户操作恢复。
    • 8. 再颁专利
    • Dual port random-access-memory circuitry
    • 双端口随机存取存储器电路
    • USRE41325E1
    • 2010-05-11
    • US12363461
    • 2009-01-30
    • Haiming YuTony K. NgaiKok Heng Choe
    • Haiming YuTony K. NgaiKok Heng Choe
    • G11C11/00
    • G11C7/12G11C7/04G11C7/1075G11C8/16G11C8/18
    • Dual port memory array circuitry is provided that includes bit line voltage clamping circuitry. The clamping circuitry contains control transistors that are used to enable and disable the clamping circuitry. The clamping circuitry also contains voltage regulator transistors and feedback paths. When a write operation is performed on one port of the dual port memory array while a read operation is being performed on the other port of the dual port memory array, the bit line voltage clamping circuitry prevents the voltages on the read port bit lines from dropping too low. This allows the write operation to be performed rapidly, even if the memory cell being written to has been adversely affected by variations due to process, voltage, and temperature.
    • 提供了包括位线电压钳位电路的双端口存储器阵列电路。 钳位电路包含用于启用和禁用钳位电路的控制晶体管。 钳位电路还包含稳压晶体管和反馈路径。 当在双端口存储器阵列的另一端口执行读取操作时在双端口存储器阵列的一个端口上执行写入操作时,位线电压钳位电路防止读取端口位线上的电压下降 太低。 即使写入的存储单元受到过程,电压和温度的变化的不利影响,也可以快速执行写入操作。
    • 10. 发明授权
    • Dual port random-access-memory circuitry
    • 双端口随机存取存储器电路
    • US07471588B2
    • 2008-12-30
    • US11506254
    • 2006-08-18
    • Haiming YuTony K. NgaiKok Heng Choe
    • Haiming YuTony K. NgaiKok Heng Choe
    • G11C11/00
    • G11C7/12G11C7/04G11C7/1075G11C8/16G11C8/18
    • Dual port memory array circuitry is provided that includes bit line voltage clamping circuitry. The clamping circuitry contains control transistors that are used to enable and disable the clamping circuitry. The clamping circuitry also contains voltage regulator transistors and feedback paths. When a write operation is performed on one port of the dual port memory array while a read operation is being performed on the other port of the dual port memory array, the bit line voltage clamping circuitry prevents the voltages on the read port bit lines from dropping too low. This allows the write operation to be performed rapidly, even if the memory cell being written to has been adversely affected by variations due to process, voltage, and temperature.
    • 提供了包括位线电压钳位电路的双端口存储器阵列电路。 钳位电路包含用于启用和禁用钳位电路的控制晶体管。 钳位电路还包含稳压晶体管和反馈路径。 当在双端口存储器阵列的另一端口执行读取操作时在双端口存储器阵列的一个端口上执行写入操作时,位线电压钳位电路防止读取端口位线上的电压下降 太低。 即使写入的存储单元受到过程,电压和温度的变化的不利影响,也可以快速执行写入操作。