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    • 2. 发明申请
    • Dual port random-access-memory circuitry
    • 双端口随机存取存储器电路
    • US20070258313A1
    • 2007-11-08
    • US11506254
    • 2006-08-18
    • Haiming YuTony K. NgaiKok Heng Choe
    • Haiming YuTony K. NgaiKok Heng Choe
    • G11C8/00
    • G11C7/12G11C7/04G11C7/1075G11C8/16G11C8/18
    • Dual port memory array circuitry is provided that includes bit line voltage clamping circuitry. The clamping circuitry contains control transistors that are used to enable and disable the clamping circuitry. The clamping circuitry also contains voltage regulator transistors and feedback paths. When a write operation is performed on one port of the dual port memory array while a read operation is being performed on the other port of the dual port memory array, the bit line voltage clamping circuitry prevents the voltages on the read port bit lines from dropping too low. This allows the write operation to be performed rapidly, even if the memory cell being written to has been adversely affected by variations due to process, voltage, and temperature.
    • 提供了包括位线电压钳位电路的双端口存储器阵列电路。 钳位电路包含用于启用和禁用钳位电路的控制晶体管。 钳位电路还包含稳压晶体管和反馈路径。 当在双端口存储器阵列的另一端口执行读取操作时在双端口存储器阵列的一个端口上执行写入操作时,位线电压钳位电路防止读取端口位线上的电压下降 太低。 即使写入的存储单元受到过程,电压和温度的变化的不利影响,也可以快速执行写入操作。
    • 6. 再颁专利
    • Dual port random-access-memory circuitry
    • 双端口随机存取存储器电路
    • USRE41325E1
    • 2010-05-11
    • US12363461
    • 2009-01-30
    • Haiming YuTony K. NgaiKok Heng Choe
    • Haiming YuTony K. NgaiKok Heng Choe
    • G11C11/00
    • G11C7/12G11C7/04G11C7/1075G11C8/16G11C8/18
    • Dual port memory array circuitry is provided that includes bit line voltage clamping circuitry. The clamping circuitry contains control transistors that are used to enable and disable the clamping circuitry. The clamping circuitry also contains voltage regulator transistors and feedback paths. When a write operation is performed on one port of the dual port memory array while a read operation is being performed on the other port of the dual port memory array, the bit line voltage clamping circuitry prevents the voltages on the read port bit lines from dropping too low. This allows the write operation to be performed rapidly, even if the memory cell being written to has been adversely affected by variations due to process, voltage, and temperature.
    • 提供了包括位线电压钳位电路的双端口存储器阵列电路。 钳位电路包含用于启用和禁用钳位电路的控制晶体管。 钳位电路还包含稳压晶体管和反馈路径。 当在双端口存储器阵列的另一端口执行读取操作时在双端口存储器阵列的一个端口上执行写入操作时,位线电压钳位电路防止读取端口位线上的电压下降 太低。 即使写入的存储单元受到过程,电压和温度的变化的不利影响,也可以快速执行写入操作。
    • 9. 发明授权
    • Multiplier-accumulator circuitry and methods
    • 乘法器累加器电路和方法
    • US08645450B1
    • 2014-02-04
    • US11713434
    • 2007-03-02
    • Kok Heng ChoeTony K NgaiHenry Y. Lui
    • Kok Heng ChoeTony K NgaiHenry Y. Lui
    • G06F7/38
    • G06F7/483G06F7/5443
    • Multiplier-accumulator circuitry includes circuitry for forming a plurality of partial products of multiplier and multiplicand inputs, carry-save adder circuitry for adding together the partial products and another input to produce intermediate sum and carry outputs, final adder circuitry for adding together the intermediate sum and carry outputs to produce a final output, and feedback circuitry for applying the final output (typically after some delay, e.g., due to registration of the final output) to the carry-save adder circuitry as said another input. The above circuitry may be implemented in so-called “hard IP” (intellectual property) of a field-programmable gate array (“FPGA”) integrated circuit device. If desired, any overflow from the accumulation performed by the above circuitry may be accumulated in “soft” accumulator-overflow circuitry that is implemented in the general-purpose programmable logic of the FPGA.
    • 乘法器累加器电路包括用于形成乘法器和被乘数输入的多个部分乘积的电路,用于将部分乘积相加在一起的进位保存加法器电路和用于产生中间和和进位输出的另一个输入,用于将中间和加起来的最终加法器电路 并且输出以产生最终输出,以及反馈电路,用于将所述最终输出(通常在一些延迟之后,例如,由于最终输出的注册)作为所述另一个输入施加到进位保存加法器电路。 上述电路可以在现场可编程门阵列(“FPGA”)集成电路装置的所谓“硬IP”(知识产权)中实现。 如果需要,由上述电路执行的累加的任何溢出可以被累积在FPGA的通用可编程逻辑中实现的“软”累加器溢出电路中。
    • 10. 发明授权
    • Dual port random-access-memory circuitry
    • 双端口随机存取存储器电路
    • US07471588B2
    • 2008-12-30
    • US11506254
    • 2006-08-18
    • Haiming YuTony K. NgaiKok Heng Choe
    • Haiming YuTony K. NgaiKok Heng Choe
    • G11C11/00
    • G11C7/12G11C7/04G11C7/1075G11C8/16G11C8/18
    • Dual port memory array circuitry is provided that includes bit line voltage clamping circuitry. The clamping circuitry contains control transistors that are used to enable and disable the clamping circuitry. The clamping circuitry also contains voltage regulator transistors and feedback paths. When a write operation is performed on one port of the dual port memory array while a read operation is being performed on the other port of the dual port memory array, the bit line voltage clamping circuitry prevents the voltages on the read port bit lines from dropping too low. This allows the write operation to be performed rapidly, even if the memory cell being written to has been adversely affected by variations due to process, voltage, and temperature.
    • 提供了包括位线电压钳位电路的双端口存储器阵列电路。 钳位电路包含用于启用和禁用钳位电路的控制晶体管。 钳位电路还包含稳压晶体管和反馈路径。 当在双端口存储器阵列的另一端口执行读取操作时在双端口存储器阵列的一个端口上执行写入操作时,位线电压钳位电路防止读取端口位线上的电压下降 太低。 即使写入的存储单元受到过程,电压和温度的变化的不利影响,也可以快速执行写入操作。