专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070176182A1 Structure for integrating LED circuit onto heat-dissipation substrate 审中-公开
标题翻译：将LED电路集成到散热基板上的结构
公开(公告)号：US20070176182A1
公开(公告)日：2007-08-02
申请号：US11340660
申请日：2006-01-27
申请人： Way-Jze Wen , Yi-Fong Lin , Shyi-Ming Pan , Chih-Wei Chiang , Yin-Cheng Chu , Huan-Che Tseng , Fen-Ren Chien
发明人： Way-Jze Wen , Yi-Fong Lin , Shyi-Ming Pan , Chih-Wei Chiang , Yin-Cheng Chu , Huan-Che Tseng , Fen-Ren Chien
IPC分类号： H01L33/00
CPC分类号： H01L25/167 , H01L33/64 , H01L2224/73265 , H05K1/0203 , H05K1/182 , H01L2224/48091 , H01L2924/00014
摘要： A structure for integrating LED circuit onto a heat-dissipation substrate is disclosed. At least an electronic component and a LED chip are integrated on a heat-dissipation substrate. The electronic component can be a passive component, a drive chip, an electrostatic discharge protection device, or a sensing component. Therefore, both wire-bonding area of the LED chip and the series resistance of wires are reduced while the heat dissipation efficiency is enhanced.
摘要翻译：公开了一种将LED电路集成到散热基板上的结构。至少电子部件和LED芯片集成在散热基板上。电子部件可以是无源部件，驱动芯片，静电放电保护装置或感测部件。因此，LED芯片的引线接合面积和电线的串联电阻降低，同时散热效率提高。

2. 发明申请

US20080121907A1 LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20080121907A1
公开(公告)日：2008-05-29
申请号：US11309445
申请日：2006-08-08
申请人： Way-Jze Wen , Yi-Fong Lin , Huan-Che Tseng , Shyi-Ming Pan , Fen-Ren Chien , Kuo-Ruei Huang , Wen-Joe Song
发明人： Way-Jze Wen , Yi-Fong Lin , Huan-Che Tseng , Shyi-Ming Pan , Fen-Ren Chien , Kuo-Ruei Huang , Wen-Joe Song
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/32 , H01L33/44 , H01L2933/0016
摘要： An LED includes a substrate, a first type doping semiconductor layer, a first electrode, a light emitting layer, a second type doping semiconductor layer, a second electrode, a first dielectric layer and a first conductive plug. The first type doping semiconductor layer is formed on the substrate, and the light emitting layer, the second type doping semiconductor layer and the second electrode are formed on a portion of the first type doping semiconductor layer in sequence. The first dielectric layer is formed on another portion of the first type doping semiconductor layer where is not covered by the light emitting layer. The first electrode formed on the first dielectric layer is electrically connected with the first type doping semiconductor layer through the first conductive plug formed in the first dielectric layer. Furthermore, the second electrode is electrically connected with the second type doping semiconductor layer.
摘要翻译： LED包括基板，第一类型掺杂半导体层，第一电极，发光层，第二类型掺杂半导体层，第二电极，第一介电层和第一导电插塞。在基板上形成第一型掺杂半导体层，依次在第一型掺杂半导体层的一部分上形成发光层，第二型掺杂半导体层和第二电极。第一介电层形成在第一型掺杂半导体层的未被发光层覆盖的另一部分上。形成在第一电介质层上的第一电极通过形成在第一介电层中的第一导电插塞与第一型掺杂半导体层电连接。此外，第二电极与第二类型掺杂半导体层电连接。

3. 发明申请

US20070246711A1 Multi-directional light scattering LED and manufacturing method thereof 有权
标题翻译：多向光散射LED及其制造方法
公开(公告)号：US20070246711A1
公开(公告)日：2007-10-25
申请号：US11409003
申请日：2006-04-24
申请人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
发明人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.
摘要翻译：公开了一种多向光散射LED及其制造方法。金属氧化物不规则地设置在第二半导体层上，然后通过蚀刻去除。第二半导体层的一部分，发光层的一部分或第一半导体层的一部分也被去除以形成散射层。透明导电层设置在第二半导体层的上方，而第二电极设置在透明导电层的上方。第一电极安装在散射层上。因此，来自LED的光输出在多方向上散射。

4. 发明授权

US07476912B2 Multi-directional light scattering LED and manufacturing method thereof 有权
标题翻译：多向光散射LED及其制造方法
公开(公告)号：US07476912B2
公开(公告)日：2009-01-13
申请号：US11409003
申请日：2006-04-24
申请人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
发明人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.
摘要翻译：公开了一种多向光散射LED及其制造方法。金属氧化物不规则地设置在第二半导体层上，然后通过蚀刻去除。第二半导体层的一部分，发光层的一部分或第一半导体层的一部分也被去除以形成散射层。透明导电层设置在第二半导体层的上方，而第二电极设置在透明导电层的上方。第一电极安装在散射层上。因此，来自LED的光输出在多方向上散射。

5. 发明申请

US20080241979A1 Multi-directional light scattering LED and manufacturing method thereof 有权
标题翻译：多向光散射LED及其制造方法
公开(公告)号：US20080241979A1
公开(公告)日：2008-10-02
申请号：US12149288
申请日：2008-04-30
申请人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
发明人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.
摘要翻译：公开了一种多向光散射LED及其制造方法。金属氧化物不规则地设置在第二半导体层上，然后通过蚀刻去除。第二半导体层的一部分，发光层的一部分或第一半导体层的一部分也被去除以形成散射层。透明导电层设置在第二半导体层的上方，而第二电极设置在透明导电层的上方。第一电极安装在散射层上。因此，来自LED的光输出在多方向上散射。

6. 发明授权

US07632693B2 Manufacturing method of multi-directional light scattering LED 有权
标题翻译：多向光散射LED的制造方法
公开(公告)号：US07632693B2
公开(公告)日：2009-12-15
申请号：US12149288
申请日：2008-04-30
申请人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
发明人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
IPC分类号： H01L29/00
CPC分类号： H01L33/22
摘要： A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.
摘要翻译：公开了一种多向光散射LED及其制造方法。金属氧化物不规则地设置在第二半导体层上，然后通过蚀刻去除。第二半导体层的一部分，发光层的一部分或第一半导体层的一部分也被去除以形成散射层。透明导电层设置在第二半导体层的上方，而第二电极设置在透明导电层的上方。第一电极安装在散射层上。因此，来自LED的光输出在多方向上散射。

7. 发明申请

US20070200119A1 FLIP-CHIP LED PACKAGE AND LED CHIP 审中-公开
标题翻译： FLIP-CHIP LED封装和LED芯片
公开(公告)号：US20070200119A1
公开(公告)日：2007-08-30
申请号：US11307875
申请日：2006-02-26
申请人： Yun-Li Li , Way-Jze Wen , Fen-Ren Chien
发明人： Yun-Li Li , Way-Jze Wen , Fen-Ren Chien
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L33/20
摘要： A light emitting diode (LED) chip mainly includes a substrate, a first type doped semiconductor layer, light-emitting layers, second type doped semiconductor layers, a first electrode and second electrodes. The first type doped semiconductor layer is disposed on the substrate and includes protrusions which is upward extended; the light-emitting layers are disposed on the corresponding protrusions respectively; the second type doped semiconductor layers are disposed on the corresponding light-emitting layers respectively; the first electrode is disposed on the first type doped semiconductor layer except the protrusions and electrically connected to the first type doped semiconductor layer; the second electrodes are disposed on the corresponding second type doped semiconductor layers respectively; and the first electrode is electrically insulated from the second electrodes.
摘要翻译：发光二极管（LED）芯片主要包括基板，第一类型掺杂半导体层，发光层，第二类型掺杂半导体层，第一电极和第二电极。所述第一掺杂半导体层设置在所述基板上，并且包括向上延伸的突起; 发光层分别设置在相应的凸起上; 第二类掺杂半导体层分别设置在相应的发光层上; 第一电极设置在除了突起之外的第一类型掺杂半导体层上，并电连接到第一类型掺杂半导体层; 第二电极分别设置在相应的第二类型的掺杂半导体层上; 并且第一电极与第二电极电绝缘。

8. 发明申请

US20060163682A1 Semiconducting photo detector structure 审中-公开
标题翻译：半导体光电探测器结构
公开(公告)号：US20060163682A1
公开(公告)日：2006-07-27
申请号：US11041492
申请日：2005-01-22
申请人： Shyi-Ming Pan , Fen-Ren Chien
发明人： Shyi-Ming Pan , Fen-Ren Chien
IPC分类号： H01L27/14
CPC分类号： H01L31/1035 , H01L31/022408 , H01L31/105
摘要： An epitaxial structure for semiconducting photo detectors is provided. The epitaxial structure contains a substrate having a built-in electric circuit, a first and second metallic layers on top of said substrate electrically connected to the corresponding electrical input and output points of the substrate's electric circuit, and a semiconducting photo detecting element as the topmost part for receiving incident lights.
摘要翻译：提供了一种用于半导体光电探测器的外延结构。外延结构包含具有内置电路的基板，在所述基板的顶部上电连接到基板的电路的对应电输入和输出点的第一和第二金属层，以及作为最上层的半导体光检测元件部分接收入射灯。

9. 发明申请

US20050145873A1 Light-emitting diode 审中-公开
标题翻译：发光二极管
公开(公告)号：US20050145873A1
公开(公告)日：2005-07-07
申请号：US10750784
申请日：2004-01-03
申请人： Shyi-Ming Pan , Fen-Ren Chien , Lung-Chien Chen
发明人： Shyi-Ming Pan , Fen-Ren Chien , Lung-Chien Chen
IPC分类号： H01L33/06 , H01L33/12 , H01L33/14 , H01L33/32 , H01L33/00
CPC分类号： H01L33/32 , H01L33/007
摘要： A light-emitting diode device is provided with the following manufacturing method: forming an n-GaN layer on a substrate; growing an SiO2 layer on the n-GaN surface, and using the photo-lithography process to expose the n-GaN within the mesa area; using MOCVD to grow an LED structure in the epitaxy within the mesa area, the formed structure being a p-n coplanar structure due to the selective area characteristic; and finally, forming the electrodes on the structure to complete an LED device. The device can be manufactured without the etching process to form the p-n coplanar structure. In comparison to other conventional manufacturing methods, the method simplifies the manufacturing process, and avoids many problems associated with etching, including non-uniform etching, overly rough surface, etching damages, and current leakage. Furthermore, SiO2 is used as a scattering layer to prevent emitted light from internally reflected, and therefore, improves the external quantum efficiency.
摘要翻译：一种发光二极管器件具有以下制造方法：在衬底上形成n-GaN层; 在n-GaN表面上生长SiO 2层，并使用光刻工艺在台面区域内露出n-GaN; 使用MOCVD在台面区域内的外延生长LED结构，由于选择区域特性，形成的结构是p-n共面结构; 最后，在结构上形成电极以完成LED器件。可以在没有蚀刻工艺的情况下制造器件以形成p-n共面结构。与其他常规制造方法相比，该方法简化了制造工艺，并且避免了与蚀刻相关的许多问题，包括不均匀蚀刻，过度粗糙的表面，蚀刻损伤和电流泄漏。此外，使用SiO 2作为散射层以防止发射的光从内部反射，因此提高了外部量子效率。

10. 发明授权

US07374958B2 Light emitting semiconductor bonding structure and method of manufacturing the same 有权
标题翻译：发光半导体结合结构及其制造方法
公开(公告)号：US07374958B2
公开(公告)日：2008-05-20
申请号：US11380209
申请日：2006-04-26
申请人： Shyi-Ming Pan , Fen-Ren Chien
发明人： Shyi-Ming Pan , Fen-Ren Chien
IPC分类号： H01L21/00 , H01L21/44 , H01L33/00 , H01L20/22 , H01L27/15 , H01L29/267
CPC分类号： H01L25/167 , H01L33/62 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/16
摘要： A light emitting semiconductor bonding structure includes a structure formed by bonding a substrate onto a light emitting semiconductor. The substrate is a structure containing electric circuits. The ohmic contact N electrode layer and P electrode layer are formed on the N-type contact layer and the P-type contact layer of the light emitting semiconductor respectively. A first metallic layer and a second metallic layer are formed on the surface of the substrate by means of immersion plating or deposition. The metallic layers are connected electrically to the corresponding electric signal input/output nodes of the electric circuit of the substrate. The first metallic layer and the second metallic layer are bonded onto the N electrode layer and the P electrode layer respectively through supersonic welding, and as such the light emitting semiconductor is bonded onto the substrate, and thus realizing the electric connection in-between.
摘要翻译：发光半导体接合结构包括通过将衬底接合到发光半导体上而形成的结构。基板是包含电路的结构。欧姆接触N电极层和P电极层分别形成在发光半导体的N型接触层和P型接触层上。通过浸镀或沉积在基板的表面上形成第一金属层和第二金属层。金属层电连接到基板的电路的相应的电信号输入/输出节点。第一金属层和第二金属层通过超声波焊接分别接合在N电极层和P电极层上，并且因此将发光半导体结合到基板上，从而实现电连接。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式