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1. 发明申请

US20080121907A1 LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20080121907A1
公开(公告)日：2008-05-29
申请号：US11309445
申请日：2006-08-08
申请人： Way-Jze Wen , Yi-Fong Lin , Huan-Che Tseng , Shyi-Ming Pan , Fen-Ren Chien , Kuo-Ruei Huang , Wen-Joe Song
发明人： Way-Jze Wen , Yi-Fong Lin , Huan-Che Tseng , Shyi-Ming Pan , Fen-Ren Chien , Kuo-Ruei Huang , Wen-Joe Song
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/32 , H01L33/44 , H01L2933/0016
摘要： An LED includes a substrate, a first type doping semiconductor layer, a first electrode, a light emitting layer, a second type doping semiconductor layer, a second electrode, a first dielectric layer and a first conductive plug. The first type doping semiconductor layer is formed on the substrate, and the light emitting layer, the second type doping semiconductor layer and the second electrode are formed on a portion of the first type doping semiconductor layer in sequence. The first dielectric layer is formed on another portion of the first type doping semiconductor layer where is not covered by the light emitting layer. The first electrode formed on the first dielectric layer is electrically connected with the first type doping semiconductor layer through the first conductive plug formed in the first dielectric layer. Furthermore, the second electrode is electrically connected with the second type doping semiconductor layer.
摘要翻译： LED包括基板，第一类型掺杂半导体层，第一电极，发光层，第二类型掺杂半导体层，第二电极，第一介电层和第一导电插塞。在基板上形成第一型掺杂半导体层，依次在第一型掺杂半导体层的一部分上形成发光层，第二型掺杂半导体层和第二电极。第一介电层形成在第一型掺杂半导体层的未被发光层覆盖的另一部分上。形成在第一电介质层上的第一电极通过形成在第一介电层中的第一导电插塞与第一型掺杂半导体层电连接。此外，第二电极与第二类型掺杂半导体层电连接。

2. 发明申请

US20070176182A1 Structure for integrating LED circuit onto heat-dissipation substrate 审中-公开
标题翻译：将LED电路集成到散热基板上的结构
公开(公告)号：US20070176182A1
公开(公告)日：2007-08-02
申请号：US11340660
申请日：2006-01-27
申请人： Way-Jze Wen , Yi-Fong Lin , Shyi-Ming Pan , Chih-Wei Chiang , Yin-Cheng Chu , Huan-Che Tseng , Fen-Ren Chien
发明人： Way-Jze Wen , Yi-Fong Lin , Shyi-Ming Pan , Chih-Wei Chiang , Yin-Cheng Chu , Huan-Che Tseng , Fen-Ren Chien
IPC分类号： H01L33/00
CPC分类号： H01L25/167 , H01L33/64 , H01L2224/73265 , H05K1/0203 , H05K1/182 , H01L2224/48091 , H01L2924/00014
摘要： A structure for integrating LED circuit onto a heat-dissipation substrate is disclosed. At least an electronic component and a LED chip are integrated on a heat-dissipation substrate. The electronic component can be a passive component, a drive chip, an electrostatic discharge protection device, or a sensing component. Therefore, both wire-bonding area of the LED chip and the series resistance of wires are reduced while the heat dissipation efficiency is enhanced.
摘要翻译：公开了一种将LED电路集成到散热基板上的结构。至少电子部件和LED芯片集成在散热基板上。电子部件可以是无源部件，驱动芯片，静电放电保护装置或感测部件。因此，LED芯片的引线接合面积和电线的串联电阻降低，同时散热效率提高。

3. 发明申请

US20070272930A1 LIGHT-EMITTING DIODE PACKAGE 审中-公开
标题翻译：发光二极管封装
公开(公告)号：US20070272930A1
公开(公告)日：2007-11-29
申请号：US11308926
申请日：2006-05-26
申请人： Huan-Che Tseng , Way-Jze Wen , Shyi-Ming Pan
发明人： Huan-Che Tseng , Way-Jze Wen , Shyi-Ming Pan
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/60 , H01L2224/16225
摘要： A light-emitting diode package (LED package) includes a LED and a carrier. The LED includes a substrate, a semiconductor layer, a first electrode and a second electrode. The semiconductor layer is located on a surface of the substrate and has a rough surface. The semiconductor layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer and a light-emitting layer disposed between the two doped semiconductor layers. The first electrode and the second electrode are disposed on and electrically coupled the first-type doped semiconductor layer and the second-type doped semiconductor layer, respectively. The carrier has a rough carrying surface and includes a first contact pad and a second contact pad disposed on the rough carrying surface. The first electrode and the second electrode of the LED face the carrier and are electrically coupled to the first contact pad and a second contact pad, respectively.
摘要翻译：发光二极管封装（LED封装）包括LED和载体。 LED包括基板，半导体层，第一电极和第二电极。半导体层位于基板的表面上，具有粗糙的表面。半导体层包括第一掺杂半导体层，第二掺杂半导体层和设置在两个掺杂半导体层之间的发光层。第一电极和第二电极分别设置在第一掺杂半导体层和第二掺杂半导体层上并电耦合。载体具有粗糙的承载表面，并且包括设置在粗糙承载表面上的第一接触焊盘和第二接触焊盘。 LED的第一电极和第二电极面向载体并且分别电耦合到第一接触焊盘和第二接触焊盘。

4. 发明申请

US20070170596A1 Flip-chip light emitting diode with high light-emitting efficiency 审中-公开
标题翻译：倒装芯片发光二极管具有较高的发光效率
公开(公告)号：US20070170596A1
公开(公告)日：2007-07-26
申请号：US11339622
申请日：2006-01-26
申请人： Way-Jze Wen , Yi-Fong Lin , Shyi-Ming Pan , Fen Chien
发明人： Way-Jze Wen , Yi-Fong Lin , Shyi-Ming Pan , Fen Chien
IPC分类号： H01L23/52
CPC分类号： H01L33/405 , H01L33/32 , H01L33/42 , H01L33/62 , H01L2224/48091 , H01L2224/49107 , H01L2924/01004 , H01L2924/01012 , H01L2924/01029 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/3025 , H01L2924/00014
摘要： A flip-chip light emitting diode with high light-emitting efficiency is disclosed. The LED includes a transparent conductive layer, an oxide layer, a reflective metal layer, a conductive layer, and a protective diffusion layer sequentially disposed over a p-type semiconductor layer. Thereby, light emitting from a light-emitting layer toward the p-type semiconductor layer is reflected and penetrating a transparent substrate and emitting outwards. Thus the problem of light shielded from the flip-chip type LED is solved and the light-emitting efficiency is improved. Furthermore, the present invention disposes the LED chip in a face-down orientation on a conductive substrate by flip-chip technology so as to enhance heat-dissipation efficiency of the LED.
摘要翻译：公开了一种具有高发光效率的倒装芯片发光二极管。 LED包括依次设置在p型半导体层上的透明导电层，氧化物层，反射金属层，导电层和保护性扩散层。由此，从发光层朝向p型半导体层发光的光被反射并透过透明基板并向外发射。因此解决了从倒装型LED遮光的问题，提高了发光效率。此外，本发明通过倒装芯片技术将LED芯片以面朝下的方式配置在导电基板上，从而提高LED的散热效率。

5. 发明申请

US20070141749A1 Die attachment method for LED chip and structure thereof 审中-公开
标题翻译： LED芯片贴片方法及其结构
公开(公告)号：US20070141749A1
公开(公告)日：2007-06-21
申请号：US11311243
申请日：2005-12-20
申请人： Yi-Fong Lin , Shyi-Ming Pan , Way-Jze Wen , Fen-Ren Chen
发明人： Yi-Fong Lin , Shyi-Ming Pan , Way-Jze Wen , Fen-Ren Chen
IPC分类号： H01L21/00
CPC分类号： H01L33/62 , H01L24/28 , H01L2924/01079 , H01L2924/12041 , H01L2924/00
摘要： A die attachment method for LED chips and the structure thereof are disclosed. While attaching a LED chip to a substrate, surface of two bonding material is ionized by ultrasonic waves so as to make the attachment of a LED chip to a substrate is under low temperature operating condition and having better heat dissipation structure.
摘要翻译：公开了一种LED芯片的芯片附着方法及其结构。当将LED芯片附着到基板上时，通过超声波将两个接合材料的表面电离，以使LED芯片与基板的连接处于低温工作状态并具有更好的散热结构。

6. 发明申请

US20070246711A1 Multi-directional light scattering LED and manufacturing method thereof 有权
标题翻译：多向光散射LED及其制造方法
公开(公告)号：US20070246711A1
公开(公告)日：2007-10-25
申请号：US11409003
申请日：2006-04-24
申请人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
发明人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.
摘要翻译：公开了一种多向光散射LED及其制造方法。金属氧化物不规则地设置在第二半导体层上，然后通过蚀刻去除。第二半导体层的一部分，发光层的一部分或第一半导体层的一部分也被去除以形成散射层。透明导电层设置在第二半导体层的上方，而第二电极设置在透明导电层的上方。第一电极安装在散射层上。因此，来自LED的光输出在多方向上散射。

7. 发明授权

US07632693B2 Manufacturing method of multi-directional light scattering LED 有权
标题翻译：多向光散射LED的制造方法
公开(公告)号：US07632693B2
公开(公告)日：2009-12-15
申请号：US12149288
申请日：2008-04-30
申请人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
发明人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
IPC分类号： H01L29/00
CPC分类号： H01L33/22
摘要： A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.
摘要翻译：公开了一种多向光散射LED及其制造方法。金属氧化物不规则地设置在第二半导体层上，然后通过蚀刻去除。第二半导体层的一部分，发光层的一部分或第一半导体层的一部分也被去除以形成散射层。透明导电层设置在第二半导体层的上方，而第二电极设置在透明导电层的上方。第一电极安装在散射层上。因此，来自LED的光输出在多方向上散射。

8. 发明授权

US07476912B2 Multi-directional light scattering LED and manufacturing method thereof 有权
标题翻译：多向光散射LED及其制造方法
公开(公告)号：US07476912B2
公开(公告)日：2009-01-13
申请号：US11409003
申请日：2006-04-24
申请人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
发明人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.
摘要翻译：公开了一种多向光散射LED及其制造方法。金属氧化物不规则地设置在第二半导体层上，然后通过蚀刻去除。第二半导体层的一部分，发光层的一部分或第一半导体层的一部分也被去除以形成散射层。透明导电层设置在第二半导体层的上方，而第二电极设置在透明导电层的上方。第一电极安装在散射层上。因此，来自LED的光输出在多方向上散射。

9. 发明申请

US20080241979A1 Multi-directional light scattering LED and manufacturing method thereof 有权
标题翻译：多向光散射LED及其制造方法
公开(公告)号：US20080241979A1
公开(公告)日：2008-10-02
申请号：US12149288
申请日：2008-04-30
申请人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
发明人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.
摘要翻译：公开了一种多向光散射LED及其制造方法。金属氧化物不规则地设置在第二半导体层上，然后通过蚀刻去除。第二半导体层的一部分，发光层的一部分或第一半导体层的一部分也被去除以形成散射层。透明导电层设置在第二半导体层的上方，而第二电极设置在透明导电层的上方。第一电极安装在散射层上。因此，来自LED的光输出在多方向上散射。

10. 发明授权

US07374958B2 Light emitting semiconductor bonding structure and method of manufacturing the same 有权
标题翻译：发光半导体结合结构及其制造方法
公开(公告)号：US07374958B2
公开(公告)日：2008-05-20
申请号：US11380209
申请日：2006-04-26
申请人： Shyi-Ming Pan , Fen-Ren Chien
发明人： Shyi-Ming Pan , Fen-Ren Chien
IPC分类号： H01L21/00 , H01L21/44 , H01L33/00 , H01L20/22 , H01L27/15 , H01L29/267
CPC分类号： H01L25/167 , H01L33/62 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/16
摘要： A light emitting semiconductor bonding structure includes a structure formed by bonding a substrate onto a light emitting semiconductor. The substrate is a structure containing electric circuits. The ohmic contact N electrode layer and P electrode layer are formed on the N-type contact layer and the P-type contact layer of the light emitting semiconductor respectively. A first metallic layer and a second metallic layer are formed on the surface of the substrate by means of immersion plating or deposition. The metallic layers are connected electrically to the corresponding electric signal input/output nodes of the electric circuit of the substrate. The first metallic layer and the second metallic layer are bonded onto the N electrode layer and the P electrode layer respectively through supersonic welding, and as such the light emitting semiconductor is bonded onto the substrate, and thus realizing the electric connection in-between.
摘要翻译：发光半导体接合结构包括通过将衬底接合到发光半导体上而形成的结构。基板是包含电路的结构。欧姆接触N电极层和P电极层分别形成在发光半导体的N型接触层和P型接触层上。通过浸镀或沉积在基板的表面上形成第一金属层和第二金属层。金属层电连接到基板的电路的相应的电信号输入/输出节点。第一金属层和第二金属层通过超声波焊接分别接合在N电极层和P电极层上，并且因此将发光半导体结合到基板上，从而实现电连接。

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