专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09296946B2 Method of manufacturing oxynitride phosphor 有权
标题翻译：氮氧化物荧光粉的制造方法
公开(公告)号：US09296946B2
公开(公告)日：2016-03-29
申请号：US13541871
申请日：2012-07-05
申请人： Cheng-I Chu , Ru-Shi Liu , Yu-Chih Lin , Chen-Hong Lee , Wei-Kang Cheng , Yi-Sheng Ting , Shyi-Ming Pan
发明人： Cheng-I Chu , Ru-Shi Liu , Yu-Chih Lin , Chen-Hong Lee , Wei-Kang Cheng , Yi-Sheng Ting , Shyi-Ming Pan
IPC分类号： C09K11/59 , C09K11/08 , C09K11/77
CPC分类号： C09K11/0883 , C09K11/7734
摘要： A method of manufacturing an oxynitride phosphor is revealed. A precursor is sintered under 0.1-1000 MPa nitrogen pressure for synthesis of an oxynitride phosphor. The general formula of the oxynitride phosphors is Ba3-XSi6O12N2:EuxBa3-XSi6O6N6:Eux or Ba3-XSi6O9N4:Eux (0.00001≦x≦5; 0.00001). Thus pure phosphor can be mass-produced.
摘要翻译：揭示了制造氮氧化物荧光体的方法。将前体在0.1-1000MPa氮气压力下烧结以合成氮氧化物荧光体。氧氮化物荧光体的通式为Ba3-XSi6O12N2：EuxBa3-XSi6O6N6：Eux或Ba3-XSi6O9N4：Eux（0.00001＆nlE; x＆nlE; 5; 0.00001）。因此，可以批量生产纯的磷光体。

2. 发明申请

US20130009097A1 OXYNITRIDE PHOSPHOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：氧化磷及其制造方法
公开(公告)号：US20130009097A1
公开(公告)日：2013-01-10
申请号：US13541969
申请日：2012-07-05
申请人： CHENG-I CHU , RU-SHI LIU , YU-CHIH LIN , CHEN-HONG LEE , WEI-KANG CHENG , YI-SHENG TING , SHYI-MING PAN
发明人： CHENG-I CHU , RU-SHI LIU , YU-CHIH LIN , CHEN-HONG LEE , WEI-KANG CHENG , YI-SHENG TING , SHYI-MING PAN
IPC分类号： C09K11/79
CPC分类号： C09K11/7706 , C09K11/7749
摘要： An oxynitride phosphor and a method of manufacturing the same are revealed. The formula of the oxynitride phosphor is Ba3-xSi6O12N2: Yx (0≦x≦1). Y is praseodymium (Pr) or terbium (Tb) used as a luminescent center. The oxynitride phosphor is synthesized by solid-state reaction. The oxynitride phosphor is excited by vacuum ultraviolet light with a wavelength range of 130 nm to 300 nm or ultraviolet to visible light with a wavelength range of 300 nm to 550 nm to emit light with a wavelength range of 400 nm to 700 nm. Moreover, the full-width at half-maximum of the emission spectrum is smaller than 30 nm. Thus the oxynitride phosphor is suitable for applications of backlights, plasma display panels and ultraviolet excitation. The oxynitride phosphor has higher application value.
摘要翻译：揭示了氮氧化物荧光体及其制造方法。氧氮化物荧光体的配方为Ba3-xSi6O12N2：Yx（0＆nlE; x＆nlE; 1）。 Y是用作发光中心的镨（Pr）或铽（Tb）。氧氮化物荧光粉是通过固相反应合成的。氧氮化物荧光体通过波长范围为130nm至300nm的真空紫外光或紫外线与波长范围为300nm至550nm的可见光激发，发射波长范围为400nm至700nm的光。此外，发射光谱的半峰全宽小于30nm。因此，氮氧化物荧光粉适用于背光，等离子体显示面板和紫外线激发。氮氧化物荧光体具有较高的应用价值。

3. 发明申请

US20100078671A1 Nitride based semiconductor light emitting device 审中-公开
标题翻译：基于氮化物的半导体发光器件
公开(公告)号：US20100078671A1
公开(公告)日：2010-04-01
申请号：US12354820
申请日：2009-01-16
申请人： Kuo-Chin HUANG , Shyi-Ming Pan , Hung-Li Pan , Cheng-Kuo Huang , Wei-Kang Cheng , Yi-Sheng Ting
发明人： Kuo-Chin HUANG , Shyi-Ming Pan , Hung-Li Pan , Cheng-Kuo Huang , Wei-Kang Cheng , Yi-Sheng Ting
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20
摘要： A nitride based semiconductor light emitting device is revealed. The light emitting device includes a light emitting epitaxial layer, a P-type electrode and a N-type electrode. The P-type electrode and the N-type electrode are disposed on the light emitting epitaxial layer. The light emitting device features on that the N-type electrode is arranged on the inner side of the P-type electrode. The P-type electrode extends toward the N-type electrode along the edge of the light emitting epitaxial layer and the N-type electrode extends inward along the inner side of the P-type electrode. By means of the electrode pattern with special design, the light emitting area of the light emitting device is increased.
摘要翻译：揭示了一种基于氮化物的半导体发光器件。发光器件包括发光外延层，P型电极和N型电极。 P型电极和N型电极设置在发光外延层上。发光器件的特征在于N型电极布置在P型电极的内侧。 P型电极沿着发光外延层的边缘朝向N型电极延伸，并且N型电极沿着P型电极的内侧向内延伸。通过具有特殊设计的电极图案，发光器件的发光面积增加。

4. 发明申请

US20100052494A1 Alternating current light emitting device 有权
标题翻译：交流发光装置
公开(公告)号：US20100052494A1
公开(公告)日：2010-03-04
申请号：US12329770
申请日：2008-12-08
申请人： Hui Ching FENG , Kuo-Chin Huang , Shyi-Ming Pan , Hung-Li Pan
发明人： Hui Ching FENG , Kuo-Chin Huang , Shyi-Ming Pan , Hung-Li Pan
IPC分类号： H01J1/00
CPC分类号： H01L25/0753 , H01L27/156 , H01L33/62 , H01L2224/4847 , H01L2224/49107 , Y10S257/918
摘要： An alternating current (AC) light emitting device is revealed. The AC light emitting device includes a substrate and a plurality of light emitting units arranged on the substrate. The light emitting unit consists of a first semiconductor layer, a light emitting layer, a second semiconductor layer, at least one electrode and at least one second electrode respectively arranged on the first semiconductor layer and the second semiconductor layer from bottom to top. The plurality of light emitting units is coupled to at least one adjacent light emitting unit by a plurality of conductors. By the plurality of conductors that connect light emitting units with at least one adjacent light emitting unit, an open circuit will not occur in the AC light emitting device once one of the conductors is broken.
摘要翻译：发现交流（AC）发光器件。 AC发光装置包括基板和布置在基板上的多个发光单元。发光单元由第一半导体层，发光层，第二半导体层，至少一个电极和至少一个第二电极组成，第一半导体层，第一半导体层和第二半导体层分别从底部到顶部布置。多个发光单元通过多个导体耦合到至少一个相邻的发光单元。通过将发光单元与至少一个相邻的发光单元连接的多个导体，一旦导体断开，AC发光器件将不会发生开路。

5. 发明申请

US20100032690A1 Light emitting device with an insulating layer 有权
标题翻译：具有绝缘层的发光器件
公开(公告)号：US20100032690A1
公开(公告)日：2010-02-11
申请号：US12349055
申请日：2009-01-06
申请人： Hui Ching Feng , Kuo-Chin Huang , Shyi-Ming Pan , Hung-Li Pan , Yin-Cheng Chu
发明人： Hui Ching Feng , Kuo-Chin Huang , Shyi-Ming Pan , Hung-Li Pan , Yin-Cheng Chu
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/14 , H01L2224/48091 , H01L2924/00014 , H01L2924/0002 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The present invention is related to a light emitting device with an insulating layer, which comprises a transparent substrate, a first light emitting unit, a second light emitting unit, an insulating layer and a conducting layer. The first light emitting unit and the second light emitting unit are set up on the transparent substrate, wherein the second light emitting unit has an appearance of a stair structure. The insulating layer is set between the first and the second light emitting units. The conducting layer is on the insulating layer in order to conduct the first and the second light emitting units. Because of the appearance of the stair structure of the second light emitting unit, improving the cladding efficiency of the insulating layer, further improving the insulating efficiency of the insulating layer and avoiding the insulating layer loosing and the leakage between the first and the second light emitting units.
摘要翻译：本发明涉及具有绝缘层的发光器件，其包括透明衬底，第一发光单元，第二发光单元，绝缘层和导电层。第一发光单元和第二发光单元设置在透明基板上，其中第二发光单元具有楼梯结构的外观。绝缘层设置在第一和第二发光单元之间。导电层位于绝缘层上，以便传导第一和第二发光单元。由于第二发光单元的楼梯结构的出现，提高绝缘层的包层效率，进一步提高绝缘层的绝缘效率，避免绝缘层松动以及第一和第二发光二极管之间的泄漏单位。

6. 发明申请

US20070272930A1 LIGHT-EMITTING DIODE PACKAGE 审中-公开
标题翻译：发光二极管封装
公开(公告)号：US20070272930A1
公开(公告)日：2007-11-29
申请号：US11308926
申请日：2006-05-26
申请人： Huan-Che Tseng , Way-Jze Wen , Shyi-Ming Pan
发明人： Huan-Che Tseng , Way-Jze Wen , Shyi-Ming Pan
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/60 , H01L2224/16225
摘要： A light-emitting diode package (LED package) includes a LED and a carrier. The LED includes a substrate, a semiconductor layer, a first electrode and a second electrode. The semiconductor layer is located on a surface of the substrate and has a rough surface. The semiconductor layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer and a light-emitting layer disposed between the two doped semiconductor layers. The first electrode and the second electrode are disposed on and electrically coupled the first-type doped semiconductor layer and the second-type doped semiconductor layer, respectively. The carrier has a rough carrying surface and includes a first contact pad and a second contact pad disposed on the rough carrying surface. The first electrode and the second electrode of the LED face the carrier and are electrically coupled to the first contact pad and a second contact pad, respectively.
摘要翻译：发光二极管封装（LED封装）包括LED和载体。 LED包括基板，半导体层，第一电极和第二电极。半导体层位于基板的表面上，具有粗糙的表面。半导体层包括第一掺杂半导体层，第二掺杂半导体层和设置在两个掺杂半导体层之间的发光层。第一电极和第二电极分别设置在第一掺杂半导体层和第二掺杂半导体层上并电耦合。载体具有粗糙的承载表面，并且包括设置在粗糙承载表面上的第一接触焊盘和第二接触焊盘。 LED的第一电极和第二电极面向载体并且分别电耦合到第一接触焊盘和第二接触焊盘。

7. 发明申请

US20070141749A1 Die attachment method for LED chip and structure thereof 审中-公开
标题翻译： LED芯片贴片方法及其结构
公开(公告)号：US20070141749A1
公开(公告)日：2007-06-21
申请号：US11311243
申请日：2005-12-20
申请人： Yi-Fong Lin , Shyi-Ming Pan , Way-Jze Wen , Fen-Ren Chen
发明人： Yi-Fong Lin , Shyi-Ming Pan , Way-Jze Wen , Fen-Ren Chen
IPC分类号： H01L21/00
CPC分类号： H01L33/62 , H01L24/28 , H01L2924/01079 , H01L2924/12041 , H01L2924/00
摘要： A die attachment method for LED chips and the structure thereof are disclosed. While attaching a LED chip to a substrate, surface of two bonding material is ionized by ultrasonic waves so as to make the attachment of a LED chip to a substrate is under low temperature operating condition and having better heat dissipation structure.
摘要翻译：公开了一种LED芯片的芯片附着方法及其结构。当将LED芯片附着到基板上时，通过超声波将两个接合材料的表面电离，以使LED芯片与基板的连接处于低温工作状态并具有更好的散热结构。

8. 发明申请

US20060163682A1 Semiconducting photo detector structure 审中-公开
标题翻译：半导体光电探测器结构
公开(公告)号：US20060163682A1
公开(公告)日：2006-07-27
申请号：US11041492
申请日：2005-01-22
申请人： Shyi-Ming Pan , Fen-Ren Chien
发明人： Shyi-Ming Pan , Fen-Ren Chien
IPC分类号： H01L27/14
CPC分类号： H01L31/1035 , H01L31/022408 , H01L31/105
摘要： An epitaxial structure for semiconducting photo detectors is provided. The epitaxial structure contains a substrate having a built-in electric circuit, a first and second metallic layers on top of said substrate electrically connected to the corresponding electrical input and output points of the substrate's electric circuit, and a semiconducting photo detecting element as the topmost part for receiving incident lights.
摘要翻译：提供了一种用于半导体光电探测器的外延结构。外延结构包含具有内置电路的基板，在所述基板的顶部上电连接到基板的电路的对应电输入和输出点的第一和第二金属层，以及作为最上层的半导体光检测元件部分接收入射灯。

9. 发明申请

US20050145873A1 Light-emitting diode 审中-公开
标题翻译：发光二极管
公开(公告)号：US20050145873A1
公开(公告)日：2005-07-07
申请号：US10750784
申请日：2004-01-03
申请人： Shyi-Ming Pan , Fen-Ren Chien , Lung-Chien Chen
发明人： Shyi-Ming Pan , Fen-Ren Chien , Lung-Chien Chen
IPC分类号： H01L33/06 , H01L33/12 , H01L33/14 , H01L33/32 , H01L33/00
CPC分类号： H01L33/32 , H01L33/007
摘要： A light-emitting diode device is provided with the following manufacturing method: forming an n-GaN layer on a substrate; growing an SiO2 layer on the n-GaN surface, and using the photo-lithography process to expose the n-GaN within the mesa area; using MOCVD to grow an LED structure in the epitaxy within the mesa area, the formed structure being a p-n coplanar structure due to the selective area characteristic; and finally, forming the electrodes on the structure to complete an LED device. The device can be manufactured without the etching process to form the p-n coplanar structure. In comparison to other conventional manufacturing methods, the method simplifies the manufacturing process, and avoids many problems associated with etching, including non-uniform etching, overly rough surface, etching damages, and current leakage. Furthermore, SiO2 is used as a scattering layer to prevent emitted light from internally reflected, and therefore, improves the external quantum efficiency.
摘要翻译：一种发光二极管器件具有以下制造方法：在衬底上形成n-GaN层; 在n-GaN表面上生长SiO 2层，并使用光刻工艺在台面区域内露出n-GaN; 使用MOCVD在台面区域内的外延生长LED结构，由于选择区域特性，形成的结构是p-n共面结构; 最后，在结构上形成电极以完成LED器件。可以在没有蚀刻工艺的情况下制造器件以形成p-n共面结构。与其他常规制造方法相比，该方法简化了制造工艺，并且避免了与蚀刻相关的许多问题，包括不均匀蚀刻，过度粗糙的表面，蚀刻损伤和电流泄漏。此外，使用SiO 2作为散射层以防止发射的光从内部反射，因此提高了外部量子效率。

10. 发明授权

US08927303B2 Method for manufacturing light-emitting diode 有权
标题翻译：制造发光二极管的方法
公开(公告)号：US08927303B2
公开(公告)日：2015-01-06
申请号：US12552368
申请日：2009-09-02
申请人： Wei-Kang Cheng , Jia-Lin Li , Shyi-Ming Pan , Kuo-Chi Huang
发明人： Wei-Kang Cheng , Jia-Lin Li , Shyi-Ming Pan , Kuo-Chi Huang
IPC分类号： H01L21/00 , H01L33/50
CPC分类号： H01L25/0753 , H01L33/486 , H01L33/504 , H01L33/507 , H01L33/508 , H01L33/56 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a light-emitting diode (LED) and a method for manufacturing the same. The LED comprises an LED die, one or more metal pads, and a fluorescent layer. The characteristics of the present invention include that the metals pads are left exposed for the convenience of subsequent wiring and packaging processes. In addition, the LED provided by the present invention is a single light-mixing chip, which can be packaged directly without the need of coating fluorescent powders on the packaging glue. Because the fluorescent layer and the packaging glue are not processed simultaneously and are of different materials, the stress problem in the packaged LED can be reduced effectively.
摘要翻译：本发明涉及发光二极管（LED）及其制造方法。 LED包括LED管芯，一个或多个金属焊盘和荧光层。本发明的特征包括为了方便后续的布线和包装过程，将金属垫留下来露出。此外，本发明提供的LED是单一的混合芯片，其可以直接包装而不需要在包装胶上涂布荧光粉。由于荧光层和包装胶不是同时处理并且具有不同的材料，所以可以有效地降低封装LED中的应力问题。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式