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1. 发明申请

US20130248931A1 NITRIDE SEMICONDUCTOR DEVICE 失效
标题翻译：氮化物半导体器件
公开(公告)号：US20130248931A1
公开(公告)日：2013-09-26
申请号：US13599951
申请日：2012-08-30
申请人： Wataru SAITO , Yasunobu SAITO , Hidetoshi FUJIMOTO , Akira YOSHIOKA , Tetsuya OHNO , Toshiyuki NAKA
发明人： Wataru SAITO , Yasunobu SAITO , Hidetoshi FUJIMOTO , Akira YOSHIOKA , Tetsuya OHNO , Toshiyuki NAKA
IPC分类号： H01L29/778
CPC分类号： H01L27/0727 , H01L21/8252 , H01L27/0207 , H01L27/0605 , H01L27/0629 , H01L29/0619 , H01L29/1066 , H01L29/2003 , H01L29/41758 , H01L29/7786 , H01L29/872 , H01L2924/0002 , H02M3/155 , H02M3/33569 , H02M2001/007 , H01L2924/00
摘要： According to one embodiment, a nitride semiconductor device has an electroconductive substrate, a first nitride semiconductor layer provided directly on the electroconductive substrate or provided on the electroconductive substrate through a buffer layer and formed of a non-doped nitride semiconductor, a second nitride semiconductor layer provided on the first nitride semiconductor layer and formed of a non-doped or n-type nitride semiconductor having a band gap wider than that of the first nitride semiconductor layer, a heterojunction field effect transistor having a source electrode, a drain electrode, and a gate electrode, a Schottky barrier diode having an anode electrode and a cathode electrode, first and second element isolation insulating layers, and a frame electrode. The frame electrode is electrically connected to the source electrode and the electroconductive substrate, and surrounds outer peripheries of the heterojunction field effect transistor and the Schottky barrier diode.
摘要翻译：根据一个实施例，氮化物半导体器件具有导电衬底，第一氮化物半导体层，直接设置在导电衬底上，或通过缓冲层设置在导电衬底上，并由非掺杂氮化物半导体形成，第二氮化物半导体层设置在所述第一氮化物半导体层上并且由具有比所述第一氮化物半导体层宽的带隙的非掺杂或n型氮化物半导体形成的异质结场效应晶体管具有源电极，漏电极和栅电极，具有阳极电极和阴极电极的肖特基势垒二极管，第一和第二元件隔离绝缘层以及框架电极。框电极电连接到源电极和导电衬底，并且包围异质结场效应晶体管和肖特基势垒二极管的外周。

2. 发明申请

US20120241751A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20120241751A1
公开(公告)日：2012-09-27
申请号：US13238666
申请日：2011-09-21
申请人： Akira YOSHIOKA , Yasunobu Saito , Hidetoshi Fujimoto , Tetsuya Ohno , Wataru Saito , Toru Sugiyama
发明人： Akira YOSHIOKA , Yasunobu Saito , Hidetoshi Fujimoto , Tetsuya Ohno , Wataru Saito , Toru Sugiyama
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L29/7787 , H01L23/3171 , H01L29/0661 , H01L29/2003 , H01L29/402 , H01L29/41758 , H01L29/4236 , H01L29/66462 , H01L29/7786 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a third electrode, a first insulating film and a second insulating film. The first semiconductor layer includes a nitride semiconductor. The second semiconductor layer is provided on the first layer, includes a nitride semiconductor, and includes a hole. The first electrode is provided in the hole. The second electrode is provided on the second layer. The third electrode is provided on the second layer so that the first electrode is disposed between the third and second electrodes. The first insulating film is provided between the first electrode and an inner wall of the hole and between the first and second electrodes, and is provided spaced from the third electrode. The second insulating film is provided in contact with the second layer between the first and third electrodes.
摘要翻译：根据一个实施例，氮化物半导体器件包括第一半导体层，第二半导体层，第一电极，第二电极，第三电极，第一绝缘膜和第二绝缘膜。第一半导体层包括氮化物半导体。第二半导体层设置在第一层上，包括氮化物半导体，并且包括孔。第一电极设置在孔中。第二电极设置在第二层上。第三电极设置在第二层上，使得第一电极设置在第三和第二电极之间。第一绝缘膜设置在第一电极和孔的内壁之间以及第一和第二电极之间，并且与第三电极间隔设置。第二绝缘膜设置成与第一和第三电极之间的第二层接触。

3. 发明申请

US20130069117A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20130069117A1
公开(公告)日：2013-03-21
申请号：US13619560
申请日：2012-09-14
申请人： Akira YOSHIOKA , Yasunobu Saito , Hidetoshi Fujimoto , Tetsuya Ohno , Wataru Saito
发明人： Akira YOSHIOKA , Yasunobu Saito , Hidetoshi Fujimoto , Tetsuya Ohno , Wataru Saito
IPC分类号： H01L29/778
CPC分类号： H01L29/2003 , H01L29/0619 , H01L29/1066 , H01L29/4236 , H01L29/42364 , H01L29/7787
摘要： A nitride semiconductor device includes a substrate, a first Inx1Ga1-x1-y1Aly1N layer, a second Inx2Ga1-x2-y2Aly2N layer, an interlayer insulating film, a source electrode, a drain electrode, a first gate electrode, a Schottky electrode, a second gate electrode, an interconnection layer. The second Inx2Ga1-x2-y2Aly2N layer is provided on a surface of the first Inx1Ga1-x1-y1Aly1N layer. The second Inx2Ga1-x2-y2Aly2N layer has a wider band gap than the first Inx1Ga1-x1-y1Aly1N layer. The first gate electrode is provided between the source electrode and the drain electrode on a surface of the second Inx2Ga1-x2-y2Aly2N layer. The Schottky electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the first gate electrode and the drain electrode. The second gate electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the Schottky electrode and the drain electrode. The interconnection layer electrically connects the source electrode, the Schottky electrode, and the second gate electrode.
摘要翻译：氮化物半导体器件包括衬底，第一In x1Ga1-x1-y1Aly1N层，第二Inx2Ga1-x2-y2Aly2N层，层间绝缘膜，源电极，漏电极，第一栅电极，肖特基电极，第二栅电极，互连层。第二Inx2Ga1-x2-y2Aly2N层设置在第一Inx1Ga1-x1-y1Aly1N层的表面上。第二Inx2Ga1-x2-y2Aly2N层具有比第一Inx1Ga1-x1-y1Aly1N层更宽的带隙。第一栅电极设置在第二Inx2Ga1-x2-y2Aly2N层的表面上的源电极和漏电极之间。肖特基电极设置在第一栅电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。第二栅电极设置在肖特基电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。互连层电连接源电极，肖特基电极和第二栅电极。

4. 发明申请

US20120187413A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 失效
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20120187413A1
公开(公告)日：2012-07-26
申请号：US13238684
申请日：2011-09-21
申请人： Yasunobu SAITO , Hidetoshi FUJIMOTO , Tetsuya OHNO , Akira YOSHIOKA , Wataru SAITO
发明人： Yasunobu SAITO , Hidetoshi FUJIMOTO , Tetsuya OHNO , Akira YOSHIOKA , Wataru SAITO
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L29/7783 , H01L29/2003 , H01L29/4236 , H01L29/66462 , H01L29/7787
摘要： According to one embodiment, a nitride semiconductor device includes a first semiconductor, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a first electrode, a second electrode and a third electrode. The first, second and fourth semiconductor layers include a nitride semiconductor. The second semiconductor layer is provided on the first semiconductor layer, has a band gap not less than that of the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The third semiconductor layer is GaN. The fourth semiconductor layer is provided on the third semiconductor layer to have an interspace on a part of the third semiconductor layer, has a band gap not less than that of the second semiconductor layer. The first electrode is provided on a portion of the third semiconductor layer. The fourth semiconductor layer is not provided on the portion.
摘要翻译：根据一个实施例，氮化物半导体器件包括第一半导体，第二半导体层，第三半导体层，第四半导体层，第一电极，第二电极和第三电极。第一，第二和第四半导体层包括氮化物半导体。第二半导体层设置在第一半导体层上，具有不小于第一半导体层的带隙。第三半导体层设置在第二半导体层上。第三半导体层是GaN。第四半导体层设置在第三半导体层上，以在第三半导体层的一部分上具有间隙，具有不小于第二半导体层的带隙。第一电极设置在第三半导体层的一部分上。第四半导体层不设置在该部分上。

5. 发明申请

US20110309413A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110309413A1
公开(公告)日：2011-12-22
申请号：US13218925
申请日：2011-08-26
申请人： Yasunobu SAITO , Wataru SAITO , Yorito KAKIUCHI , Tomohiro NITTA , Akira YOSHIOKA , Totsuya OHNO , Hidetoshi FUJIMOTO , Takao NODA
发明人： Yasunobu SAITO , Wataru SAITO , Yorito KAKIUCHI , Tomohiro NITTA , Akira YOSHIOKA , Totsuya OHNO , Hidetoshi FUJIMOTO , Takao NODA
IPC分类号： H01L29/872
CPC分类号： H01L29/7787 , H01L29/2003
摘要： A semiconductor device includes: a first semiconductor layer including AlXGa1-XN (0≦X≦1); a second semiconductor layer provided on the first semiconductor layer, including AlYGa1-YN (0≦Y≦1, X
摘要翻译：一种半导体器件包括：包含Al x Ga 1-x N（0＆amp; N e; X 1; n 1; 1）的第一半导体层; 设置在第一半导体层上的第二半导体层，包括AlYGa1-YN（0＆lt; nlE; Y＆nlE; 1，X

6. 发明申请

US20110204380A1 NITRIDE-BASED FET 审中-公开
标题翻译：基于氮化物的FET
公开(公告)号：US20110204380A1
公开(公告)日：2011-08-25
申请号：US13032582
申请日：2011-02-22
申请人： Akira YOSHIOKA , Yasunobu Saito , Hidetoshi Fujimoto , Tetsuya Ohno , Takao Noda
发明人： Akira YOSHIOKA , Yasunobu Saito , Hidetoshi Fujimoto , Tetsuya Ohno , Takao Noda
IPC分类号： H01L29/772
CPC分类号： H01L29/7787 , H01L29/0692 , H01L29/1037 , H01L29/2003 , H01L29/4232 , H01L29/66462
摘要： According to an embodiment, in a nitride-based FET, a protrusion portion is formed at an upper portion of an undoped GaN layer by second recess etching. On the protrusion portion, an undoped AlGaN layer is provided which is formed by first recess etching the upper portion of the undoped AlGaN layer. A multilayer portion is composed of the protrusion portion of the undoped GaN layer, the undoped AlGaN layer, and an insulating film. A trench portion is formed by recess etching the insulating film, the undoped AlGaN layer and a surface of the undoped GaN layer. A gate insulating film is formed on the multilayer portion and the trench portion. A gate electrode is formed on the gate insulating film so as to cover the trench portion. A film thickness of the insulting film is set larger than that of the gate insulating film.
摘要翻译：根据一个实施例，在氮化物基FET中，通过第二凹陷蚀刻在未掺杂的GaN层的上部形成突出部分。在突起部分上，设置未掺杂的AlGaN层，其通过第一凹陷蚀刻未掺杂的AlGaN层的上部而形成。多层部分由未掺杂的GaN层的突出部分，未掺杂的AlGaN层和绝缘膜构成。通过凹陷蚀刻绝缘膜，未掺杂的AlGaN层和未掺杂的GaN层的表面来形成沟槽部分。在多层部分和沟槽部分上形成栅极绝缘膜。在栅极绝缘膜上形成栅电极以覆盖沟槽部分。绝缘膜的膜厚设定为大于栅极绝缘膜的膜厚。

7. 发明申请

US20130248928A1 SEMICONDUCTOR DEVICE HAVING NITRIDE LAYERS 失效
标题翻译：具有氮化物层的半导体器件
公开(公告)号：US20130248928A1
公开(公告)日：2013-09-26
申请号：US13605814
申请日：2012-09-06
申请人： Akira YOSHIOKA , Yasunobu Saito , Wataru Saito
发明人： Akira YOSHIOKA , Yasunobu Saito , Wataru Saito
IPC分类号： H01L29/78
CPC分类号： H01L29/475 , H01L21/8252 , H01L27/0605 , H01L27/0676 , H01L27/0688 , H01L27/0727 , H01L29/2003 , H01L29/4175 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L29/872
摘要： According to one embodiment, a semiconductor device having a semiconductor substrate, first to fourth semiconductor layers of nitride, first to third electrodes and a gate electrode is provided. The first semiconductor layer is provided directly on the semiconductor substrate or on the same via a buffer layer. The second semiconductor layer is provided so as to be spaced apart from the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer and has a band gap wider than that of the second semiconductor layer. The fourth semiconductor layer insulates the first and second semiconductor layers. The first electrode forms an ohmic junction with the first to the third semiconductor layers. The second electrode is provided on the third semiconductor layer. The gate electrode is provided between the first and the second electrodes. The third electrode forms a Schottky junction with the first semiconductor layer.
摘要翻译：根据一个实施例，提供了具有半导体衬底，氮化物的第一至第四半导体层，第一至第三电极和栅电极的半导体器件。第一半导体层直接设置在半导体衬底上，或者经由缓冲层设置在其上。第二半导体层被设置为与第一半导体层间隔开。第三半导体层设置在第二半导体层上，并且具有比第二半导体层宽的带隙。第四半导体层使第一和第二半导体层绝缘。第一电极与第一至第三半导体层形成欧姆结。第二电极设置在第三半导体层上。栅电极设置在第一和第二电极之间。第三电极与第一半导体层形成肖特基结。

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