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1. 发明授权

US08231852B2 Silicon wafer and method for producing the same 有权
标题翻译：硅晶片及其制造方法
公开(公告)号：US08231852B2
公开(公告)日：2012-07-31
申请号：US12779968
申请日：2010-05-14
申请人： Wataru Itou , Takashi Nakayama , Shigeru Umeno , Hiroaki Taguchi , Yasuo Koike
发明人： Wataru Itou , Takashi Nakayama , Shigeru Umeno , Hiroaki Taguchi , Yasuo Koike
IPC分类号： C01B33/02 , H01L21/00
CPC分类号： H01L21/3225 , C30B15/00 , C30B29/06 , C30B33/005
摘要： It is possible to provide a silicon wafer that as well as being free of COPs and dislocation clusters, has defects (grown-in defects including silicon oxides), which are not overt in an as-grown state, such as OSF nuclei and oxygen precipitate nuclei existing in the PV region, to be vanished or reduced, by adopting a method for producing a silicon wafer, the method comprising the steps of: growing a single crystal silicon ingot by the Czochralski method; cutting a silicon wafer out of the ingot; subjecting the wafer to an RTP at 1,250° C. or more for 10 seconds or more in an oxidizing atmosphere; and removing a grown-in defect region including silicon oxides in the vicinity of wafer surface layer after the RTP.
摘要翻译：可以提供不含COP和位错簇的硅晶片，在生长状态下没有明显的缺陷（包括氧化硅的生长缺陷），例如OSF核和氧沉淀物通过采用硅晶片的制造方法，存在于PV区域中的原子核将被消除或减少，该方法包括以下步骤：通过切克劳斯基法生长单晶硅锭; 从硅锭切出硅晶片; 在氧化气氛中将晶片经受1,250℃或更高10秒钟以上的RTP; 并且在RTP之后去除晶片表面层附近的包含氧化硅的生长缺陷区域。

2. 发明申请

US20100290971A1 SILICON WAFER AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：硅晶片及其制造方法
公开(公告)号：US20100290971A1
公开(公告)日：2010-11-18
申请号：US12779968
申请日：2010-05-14
申请人： Wataru Itou , Takashi Nakayama , Shigeru Umeno , Hiroaki Taguchi , Yasuo Koike
发明人： Wataru Itou , Takashi Nakayama , Shigeru Umeno , Hiroaki Taguchi , Yasuo Koike
IPC分类号： H01L21/322 , C01B33/021
CPC分类号： H01L21/3225 , C30B15/00 , C30B29/06 , C30B33/005
摘要： It is possible to provide a silicon wafer that as well as being free of COPs and dislocation clusters, has defects (grown-in defects including silicon oxides), which are not overt in an as-grown state, such as OSF nuclei and oxygen precipitate nuclei existing in the PV region, to be vanished or reduced, by adopting a method for producing a silicon wafer, the method comprising the steps of: growing a single crystal silicon ingot by the Czochralski method; cutting a silicon wafer out of the ingot; subjecting the wafer to an RTP at 1,250° C. or more for 10 seconds or more in an oxidizing atmosphere; and removing a grown-in defect region including silicon oxides in the vicinity of wafer surface layer after the RTP.
摘要翻译：可以提供不含COP和位错簇的硅晶片，在生长状态下没有明显的缺陷（包括氧化硅的生长缺陷），例如OSF核和氧沉淀物通过采用硅晶片的制造方法，存在于PV区域中的原子核将被消除或减少，该方法包括以下步骤：通过切克劳斯基法生长单晶硅锭; 从硅锭切出硅晶片; 在氧化气氛中将晶片经受1,250℃或更高10秒钟以上的RTP; 并且在RTP之后去除晶片表面层附近的包含氧化硅的生长缺陷区域。

3. 发明申请

US20100009521A1 METHOD OF PRODUCING SEMICONDUCTOR WAFER 审中-公开
标题翻译：生产半导体波长的方法
公开(公告)号：US20100009521A1
公开(公告)日：2010-01-14
申请号：US12501331
申请日：2009-07-10
申请人： Takaaki Shiota , Wataru Itou , Takashi Nakayama
发明人： Takaaki Shiota , Wataru Itou , Takashi Nakayama
IPC分类号： H01L21/322
CPC分类号： H01L21/3225 , H01L21/02008 , Y02P80/30
摘要： There is provided a production method in which the beveling step conducted for preventing the cracking or chipping in a raw wafer during the grinding can be omitted when the raw wafer cut out from a crystalline ingot is processed into a double-side mirror-finished semiconductor wafer and a semiconductor wafer can be obtained cheaply by shortening the whole of the production steps for the semiconductor wafer and decreasing the machining allowance of silicon material in the semiconductor wafer to reduce the kerf loss of the semiconductor material as compared with the conventional method.The method is characterized by comprising a slicing step of cutting out a thin disc-shaped raw wafer from a crystalline ingot; a fixed grain bonded abrasive grinding step of sandwiching the raw wafer between a pair of upper and lower platens each having a pad of fixed grain bonded abrasive to simultaneously grind both surfaces of the raw wafer; a heat treating step of subjecting the raw wafer to a given heat treatment after the fixed grain bonded abrasive grinding step; and a one-side polishing step of polishing each of the both surfaces of the raw wafer after the heat treating step.
摘要翻译：提供了一种制造方法，其中当从晶体块切出的原始晶片被加工成双面镜面半导体晶片时，可以省略在研磨期间防止原始晶片中的开裂或碎裂所进行的斜切步骤通过缩短半导体晶片的整个生产步骤并减少半导体晶片中的硅材料的加工余量，可以廉价地获得半导体晶片，以减少半导体材料的切口损耗。该方法的特征在于包括从晶锭切割薄盘形原始晶片的切片步骤; 将原始晶片夹在一对上下压板之间的固定晶粒粘结磨料研磨步骤，每个上下压板均具有固定颗粒粘合磨料垫，以同时研磨原始晶片的两个表面; 热处理工序，在所述固定晶粒结合磨料研磨工序之后对所述原料晶片进行给定的热处理; 以及在热处理步骤之后对原始晶片的两个表面进行抛光的单面抛光步骤。

4. 发明授权

US08898500B2 Method and apparatus for performing energy management via a sub-system 有权
标题翻译：通过子系统执行能量管理的方法和装置
公开(公告)号：US08898500B2
公开(公告)日：2014-11-25
申请号：US12975875
申请日：2010-12-22
申请人： Shunsuke Araki , Takashi Nakayama , Toshiaki Takano
发明人： Shunsuke Araki , Takashi Nakayama , Toshiaki Takano
IPC分类号： G06F1/32
CPC分类号： G06F1/3203 , G06F1/3287 , G06F1/3293 , Y02D10/122 , Y02D10/171
摘要： Various methods for performing energy management via a sub-system are provided. One example method includes receiving a user input while a main processing system is in a power saving mode and buffering a representation of the user input. The example method further includes, in response to receiving the user input, triggering a wake up of a main processing system from the power saving mode, and causing transmission of the representation of the user input to the main processing system for processing. Similar and related example methods and example apparatuses are also provided.
摘要翻译：提供了通过子系统执行能量管理的各种方法。一个示例性方法包括在主处理系统处于省电模式并缓冲用户输入的表示时接收用户输入。该示例方法还包括响应于接收到用户输入，触发主处理系统从省电模式唤醒，并且将用户输入的表示传输到主处理系统进行处理。还提供了类似的和相关的示例性方法和示例设备。

5. 发明授权

US08098042B2 Charging system for walking robot and charging method therefor 有权
标题翻译：步行机器人充电系统及其充电方法
公开(公告)号：US08098042B2
公开(公告)日：2012-01-17
申请号：US12267011
申请日：2008-11-07
申请人： Takashi Nakayama , Koji Okazaki , Masaaki Muromachi
发明人： Takashi Nakayama , Koji Okazaki , Masaaki Muromachi
IPC分类号： H02J7/00
CPC分类号： B25J19/005 , H01R13/6315 , H01R43/26
摘要： A charging system for a walking robot which charges a battery mounted on the walking robot by connecting a power supplying connector provided in a charging station to a power receiving connector in the walking robot, wherein the walking robot is capable of moving without significant restrictions during charging. The charging system includes a lock mechanism for locking the power supplying connector to the power receiving connector. A connector holder holds the power supplying connector detachably, an advancing/retracting mechanism advances and retracts the connector holder in the anteroposterior direction, and a lock operation mechanism performs a lock operation and an unlock operation of the lock mechanism via the connector holder. After an advance of the connector holder, the lock mechanism performs the lock operation to lock the power supplying connector to the power receiving connector. Thereafter, the connector holder is retracted out of the power supplying connector.
摘要翻译：一种用于步行机器人的充电系统，其通过将设置在充电站中的供电连接器连接到步行机器人中的受电连接器而对安装在步行机器人上的电池进行充电，其中，步行机器人能够在充电期间能够移动而没有显着的限制。充电系统包括用于将电力供应连接器锁定到电力接收连接器的锁定机构。连接器保持器可拆卸地保持供电连接器，前进/后退机构在前后方向前进和后退连接器保持器，并且锁定操作机构经由连接器保持器执行锁定机构的锁定操作和解锁操作。在连接器保持器的前进之后，锁定机构执行锁定操作以将供电连接器锁定到电力接收连接器。此后，连接器支架从电源连接器中退出。

6. 发明授权

US07933684B2 Autonomous mobile robot 有权
标题翻译：自主移动机器人
公开(公告)号：US07933684B2
公开(公告)日：2011-04-26
申请号：US11302231
申请日：2005-12-14
申请人： Tsukasa Sugino , Takashi Nakayama
发明人： Tsukasa Sugino , Takashi Nakayama
IPC分类号： G06F19/00 , G05B15/00 , G05B19/00 , H04R3/00
CPC分类号： G05D1/0255 , G05D1/0251 , G05D2201/0217
摘要： An autonomous mobile robot is provided which is autonomously movable, including an upper body, legs connected under the upper body, a first detector which detects an object in a front region of the upper body in a moving direction of the robot, and a second detector which detects an object in a region other than a sensing region sensed by the first detector including at least a rear region, a rear right region, and a rear left region of the upper body.
摘要翻译：提供一种自主移动机器人，其可自主移动，包括上身，连接在上身下的腿，第一检测器，其在机器人的移动方向上检测上体前部区域中的物体，第二检测器其检测除了包括上身体的后区域，后右区域和后左区域的由第一检测器感测的感测区域以外的区域中的物体。

7. 发明授权

US07885344B2 Wireless communication apparatus 失效
标题翻译：无线通信装置
公开(公告)号：US07885344B2
公开(公告)日：2011-02-08
申请号：US11724293
申请日：2007-03-15
申请人： Takashi Nakayama , Mitsuhiro Suzuki
发明人： Takashi Nakayama , Mitsuhiro Suzuki
IPC分类号： H04K1/10
CPC分类号： H04L27/2601 , H04B2001/7154
摘要： A wireless communication apparatus utilizing an orthogonal frequency division multiplexing communication method includes an antenna transmitting and receives a radio-frequency signal; a receiver frequency converter frequency-converting the radio-frequency signal into a baseband signal in accordance with a low-intermediate frequency method; an analog-to-digital converter converting the baseband signal into a digital signal; an orthogonal frequency division multiplexing demodulator acquiring a plurality of subcarriers in a frequency domain; a data reproduction unit reproducing data; a transmission data generator generating transmission data; an orthogonal frequency division multiplexing modulator performing orthogonal frequency division multiplexing modulation of the plurality of subcarriers; a digital-to-analog converter converting the digital orthogonal frequency division multiplexing signal into an analog signal; and a transmitter frequency converter converting the analog transmission baseband signal into a transmission radio-frequency signal in accordance with a zero-intermediate frequency method.
摘要翻译：利用正交频分多路复用通信方式的无线通信装置包括发送和接收射频信号的天线; 接收机频率转换器，根据低中频方法将射频信号频率转换为基带信号; 将基带信号转换为数字信号的模数转换器; 在频域中获取多个子载波的正交频分复用解调器; 数据再现单元再现数据; 产生发送数据的发送数据发生器; 正交频分复用调制器，执行所述多个子载波的正交频分复用调制; 将数字正交频分复用信号转换为模拟信号的数/模转换器; 以及根据零中频方法将模拟发送基带信号转换为发送射频信号的发送机频率转换器。

8. 发明申请

US20090278239A1 Silicon Wafer and Production Method Thereof 有权
标题翻译：硅晶片及其制作方法
公开(公告)号：US20090278239A1
公开(公告)日：2009-11-12
申请号：US12436692
申请日：2009-05-06
申请人： Takaaki Shiota , Takashi Nakayama , Tomoyuki Kabasawa
发明人： Takaaki Shiota , Takashi Nakayama , Tomoyuki Kabasawa
IPC分类号： H01L29/36 , H01L21/322
CPC分类号： H01L21/3225 , H01L21/02024
摘要： In a silicon wafer having an oxygen precipitate layer, a depth of DZ layer ranging from a wafer surface to an oxygen precipitate layer is 2 to 10 μm and an oxygen precipitate concentration of the oxygen precipitate layer is not less than 5×107 precipitates/cm3.
摘要翻译：在具有氧沉淀层的硅晶片中，从晶片表面到氧气沉淀层的DZ层的深度为2〜10μm，氧沉淀层的氧析出物浓度为5×10 7个/ cm 3以上。

9. 发明申请

US20070223608A1 Wireless communication apparatus 失效
标题翻译：无线通信装置
公开(公告)号：US20070223608A1
公开(公告)日：2007-09-27
申请号：US11724293
申请日：2007-03-15
申请人： Takashi Nakayama , Mitsuhiro Suzuki
发明人： Takashi Nakayama , Mitsuhiro Suzuki
IPC分类号： H04K1/10
CPC分类号： H04L27/2601 , H04B2001/7154
摘要： A wireless communication apparatus utilizing an orthogonal frequency division multiplexing communication method includes an antenna transmitting and receives a radio-frequency signal; a receiver frequency converter frequency-converting the radio-frequency signal into a baseband signal in accordance with a low-intermediate frequency method; an analog-to-digital converter converting the baseband signal into a digital signal; an orthogonal frequency division multiplexing demodulator acquiring a plurality of subcarriers in a frequency domain; a data reproduction unit reproducing data; a transmission data generator generating transmission data; an orthogonal frequency division multiplexing modulator performing orthogonal frequency division multiplexing modulation of the plurality of subcarriers; a digital-to-analog converter converting the digital orthogonal frequency division multiplexing signal into an analog signal; and a transmitter frequency converter converting the analog transmission baseband signal into a transmission radio-frequency signal in accordance with a zero-intermediate frequency method.
摘要翻译：利用正交频分多路复用通信方式的无线通信装置包括发送和接收射频信号的天线; 接收机频率转换器，根据低中频方法将射频信号频率转换为基带信号; 将基带信号转换为数字信号的模数转换器; 在频域中获取多个子载波的正交频分复用解调器; 数据再现单元再现数据; 产生发送数据的发送数据发生器; 正交频分复用调制器，执行所述多个子载波的正交频分复用调制; 将数字正交频分复用信号转换为模拟信号的数/模转换器; 以及根据零中频方法将模拟发送基带信号转换为发送射频信号的发送机频率转换器。

10. 发明申请

US20070216347A1 Charging system for legged mobile robot 有权
标题翻译：腿式移动机器人充电系统
公开(公告)号：US20070216347A1
公开(公告)日：2007-09-20
申请号：US11705772
申请日：2007-02-14
申请人： Satoshi Kaneko , Koji Okazaki , Hiroyuki Makino , Takashi Nakayama , Masaaki Muromachi
发明人： Satoshi Kaneko , Koji Okazaki , Hiroyuki Makino , Takashi Nakayama , Masaaki Muromachi
IPC分类号： H02J7/00
CPC分类号： B25J19/005 , B60L11/1833 , G05D1/0225 , G05D2201/0217 , H01R13/2421 , H01R13/6315 , H02J7/0042 , Y02T10/7005 , Y02T10/7072 , Y02T90/12 , Y02T90/121 , Y02T90/125 , Y02T90/14
摘要： A charging system for a legged mobile robot that facilitates positioning of a robot to be charged and does not put a load on the robot is provided. The charging system includes a battery 2, a power receiving connector 4 and a movable shutter member 5 capable of being opened and closed on a rear cover 3, which are provided on a robot 1, and a holder 21, a power supplying connector 22, a slide mechanism 23, a base plate 25, a charging power supply 26 and the like, which are provided on a charging station 20. The robot 1 performs a predetermined positioning on the base plate 25 and then moves the center of gravity rearward to connect the power receiving connector 4 to the power supplying connector 22. In this step, when the rear cover 3 of the robot 1 is guided by a first guide section 21a of the holder 21, the slide mechanism 23 allows the holder 21 to move horizontally. Thus, even if the robot 1 and the charging station 20 are slightly misaligned with each other, the robot 1 can be easily positioned correctly.
摘要翻译：提供了一种用于有助于定位要充电的机器人并且不对机器人施加负载的有腿移动机器人的计费系统。充电系统包括设置在机器人1上的能够在后盖3上打开和关闭的电池2，电力接收连接器4和可动活门构件5，以及保持器21，供电连接器22，设置在充电站20上的滑动机构23，基板25，充电电源26等。机器人1在基板25上执行预定的定位，然后将重心向后移动，以将电力接收连接器4连接到供电连接器22。在该步骤中，当机器人1的后盖3被保持器21的第一引导部21a引导时，滑动机构23允许保持器21水平移动。因此，即使机器人1和充电站20彼此稍微不一致，也能够容易地正确地定位机器人1。

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