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1. 发明授权

US5132278A Superconducting composite article, and method of making the same 失效
标题翻译：超导复合制品及其制造方法
公开(公告)号：US5132278A
公开(公告)日：1992-07-21
申请号：US523056
申请日：1990-05-11
申请人： Ward C. Stevens , David S. Kurtz
发明人： Ward C. Stevens , David S. Kurtz
IPC分类号： H01L39/24
CPC分类号： H01L39/143 , H01L39/248 , Y10S428/93 , Y10S505/701 , Y10S505/704 , Y10T428/12486 , Y10T428/12611
摘要： A superconducting composite material comprising a superconducting element, coated on its exterior surface with noble or inert metal, in a conductive metal matrix which includes nonsuperconducting fibers. The superconducting element may suitably comprise a filament of 123 metal oxide high temperature superconductor (MOHTSC) material, or other metal oxide superconductive material. The composite structure of the invention overcomes the inherent brittleness of metal oxide-type superconductive materials and the sensitivity to flaws to which MOHTSC materials are suceptible. The noble or inert metal and conductive matrix metal may suitably be applied by MOCVD techniques. A preferred form of the superconducting article of the present invention is a tape comprising a generally planar array of superconductive filaments, for applications such as energy storage devices, power transmission and propulsion systems that require large magnetic fields, transformers, motors, and generators. Also disclosed are a method and apparatus for applying a liquid organometallic compound in atomized form to a substrate which is heated to sufficient temperature to decompose the applied organometallic compound and yield a film of deposited metal on the substrate.
摘要翻译：一种超导复合材料，其包括在其外表面上用贵金属或惰性金属涂覆在包括非超导纤维的导电金属基体中的超导元件。超导元件可以适当地包括123金属氧化物高温超导体（MOHTSC）材料或其它金属氧化物超导材料的细丝。本发明的复合结构克服了金属氧化物型超导材料的固有脆性以及对MOHTSC材料易感的缺陷的敏感性。贵金属或惰性金属和导电基体金属可以适当地通过MOCVD技术施加。本发明的超导制品的优选形式是包括大体上平面的超导细丝阵列的带，用于例如需要大磁场，变压器，马达和发电机的能量存储装置，动力传输和推进系统的应用。还公开了一种将雾化形式的液体有机金属化合物施加到基底上的方法和装置，该基底被加热至足够的温度以分解所施加的有机金属化合物并在基底上产生沉积的金属膜。

2. 发明授权

US6058160A Photo-sensor fiber-optic stress analysis system 有权
标题翻译：光传感器光纤应力分析系统
公开(公告)号：US6058160A
公开(公告)日：2000-05-02
申请号：US144932
申请日：1998-09-01
申请人： David S. Kurtz
发明人： David S. Kurtz
IPC分类号： G01N23/20 , G01N23/04
CPC分类号： G01N23/20041
摘要： An x-ray diffraction system for determining stress in integrated circuit materials includes a source of x-rays (3) that are directed toward a sample holding mechanism for diffracting from the test sample (8). An x-ray detector (14) is arranged for detecting high back reflected diffracted x-ray intensity data representing stress in the test sample. A two-dimensional detection and storage arrangement (24) is arranged for detecting and storing the data representing stress in the test sample. A data processor (2) accesses the stored data from the two-dimensional detection and storage arrangement and processes the data representing stress in the test sample to determine stress in the test sample.
摘要翻译：用于确定集成电路材料中的应力的x射线衍射系统包括朝向样品保持机构引导的x射线源（3），用于从测试样品（8）衍射。 X射线检测器（14）布置用于检测表示测试样品中的应力的高反射衍射X射线强度数据。布置了二维检测和存储装置（24），用于检测和存储表示测试样品中的应力的数据。数据处理器（2）从二维检测和存储装置访问存储的数据，并处理表示测试样品中的应力的数据，以确定测试样品中的应力。

3. 发明授权

US06882739B2 Method and apparatus for rapid grain size analysis of polycrystalline materials 有权
标题翻译：多晶材料快速晶粒尺寸分析的方法和装置
公开(公告)号：US06882739B2
公开(公告)日：2005-04-19
申请号：US09884791
申请日：2001-06-19
申请人： David S. Kurtz , Kryzsztof J. Kozaczek , Paul R. Moran
发明人： David S. Kurtz , Kryzsztof J. Kozaczek , Paul R. Moran
IPC分类号： G01N23/20 , G06K9/00
CPC分类号： G01N23/20
摘要： An apparatus and method for performing rapid grain size analysis on a textured polycrystalline material, by generating average grain size and grain size distribution data from x-ray diffraction data of such material. Raw diffraction data is obtained by capturing a plurality of diffraction arcs within a single data capture frame. The raw diffraction data is digitally registered; (3) and the registered diffraction data is filtered to remove background noise, exclude diffraction overlaps or truncations, and compensate for biased data obtained from regions of highly preferred orientations. Average grain size and grain size distribution data are then correlated with the filtered diffraction data. The apparatus for acquiring raw diffraction data includes a collimated x-ray source having means for adjusting beam size and divergence of the x-ray generated, a 2-dimensional area detector for registering diffracted x-ray, and a sample motion assembly for moving the sample in the sample plane. The resulting system is fast, accurate, amenable to automation, and does not require highly skilled personnel to operate.
摘要翻译：通过从这种材料的x射线衍射数据产生平均晶粒尺寸和晶粒尺寸分布数据，对纹理多晶材料进行快速晶粒尺寸分析的装置和方法。通过在单个数据捕获帧内捕获多个衍射弧来获得原始衍射数据。原始衍射数据进行数字注册; （3）并且对已登记的衍射数据进行滤波以去除背景噪声，排除衍射重叠或截断，并且补偿从高度优选的取向区域获得的有偏差的数据。然后将平均晶粒尺寸和晶粒尺寸分布数据与滤波的衍射数据相关。用于获取原始衍射数据的装置包括准直X射线源，其具有用于调节所产生的x射线的光束尺寸和发散度的装置，用于记录衍射X射线的2维区域检测器和用于移动样品平面中的样品。所产生的系统快速，准确，适合于自动化，并且不需要高技能人员操作。

4. 发明授权

US06792075B2 Method and apparatus for thin film thickness mapping 有权
标题翻译：用于薄膜厚度测绘的方法和装置
公开(公告)号：US06792075B2
公开(公告)日：2004-09-14
申请号：US10225534
申请日：2002-08-21
申请人： Krzysztof J. Kozaczek , David S. Kurtz , Paul R. Moran , Roger I. Martin , Patrick W. Dehaven , Kenneth P. Rodbell , Sandra G. Malhotra
发明人： Krzysztof J. Kozaczek , David S. Kurtz , Paul R. Moran , Roger I. Martin , Patrick W. Dehaven , Kenneth P. Rodbell , Sandra G. Malhotra
IPC分类号： G01N2320
CPC分类号： G01N23/20 , G01B15/02
摘要： An apparatus and method for mapping film thickness of one or more textured polycrystalline thin films. Multiple sample films of known thickness are provided. Each sample film is irradiated by x-ray at a measurement point to generate a diffraction image that captures a plurality of diffraction arcs. Texture information (i.e., pole densities) of the sample film, is calculated based on incomplete pole figures collected on the diffraction image and used to correct the x-ray diffraction intensities from such sample. The corrected diffraction intensities are integrated for each sample film, and then used for constructing a calibration curve that correlates diffraction intensities with respective known film thickness of the sample films. The film thickness of a textured polycrystalline thin film of unknown thickness can therefore be mapped on such calibration curve, using a corrected and integrated diffraction intensity obtained for such thin film of unknown thickness.
摘要翻译：一种用于映射一个或多个纹理多晶薄膜的膜厚度的装置和方法。提供了已知厚度的多个样品膜。每个样品膜在测量点用X射线照射，以产生捕获多个衍射弧的衍射图像。基于在衍射图像上收集的不完全的极数计算样品膜的纹理信息（即极点密度），并用于校正这些样品的X射线衍射强度。对每个样品膜整合校正的衍射强度，然后用于构建将衍射强度与样品膜的已知膜厚度相关联的校准曲线。因此，可以使用未知厚度的薄膜获得的校正和积分的衍射强度，将这种具有未知厚度的纹理多晶薄膜的膜厚度映射到这种校准曲线上。

5. 发明授权

US5828724A Photo-sensor fiber-optic stress analysis system 失效
公开(公告)号：US5828724A
公开(公告)日：1998-10-27
申请号：US823971
申请日：1997-03-25
申请人： David S. Kurtz
发明人： David S. Kurtz
IPC分类号： G01N23/20
CPC分类号： G01N23/20041
摘要： An x-ray diffraction system for determining stress in integrated circuit materials includes a source of x-rays (3) that are directed toward a sample holding mechanism for diffracting from the test sample (8). An x-ray detector (14) is arranged for detecting high back reflected diffracted x-ray intensity data representing stress in the test sample. A two-dimensional detection and storage arrangement (24) is arranged for detecting and storing the data representing stress in the test sample. A data processor (2) accesses the stored data from the two-dimensional detection and storage arrangement and processes the data representing stress in the test sample to determine stress in the test sample.

6. 发明授权

US5784432A Large angle solid state position sensitive x-ray detector system 失效
公开(公告)号：US5784432A
公开(公告)日：1998-07-21
申请号：US916378
申请日：1997-08-22
申请人： David S. Kurtz , Clay O. Ruud
发明人： David S. Kurtz , Clay O. Ruud
IPC分类号： G01N23/20 , G01T1/20
CPC分类号： G01N23/20 , G01T1/2018
摘要： A method and apparatus for x-ray measurement of certain properties of a solid material. In distinction to known methods and apparatus, this invention employs a specific fiber-optic bundle configuration, termed a reorganizer, itself known for other uses, for coherently transmitting visible light originating from the scintillation of diffracted x-radiation from the solid material gathered along a substantially one dimensional linear arc, to a two-dimensional photo-sensor array. The two-dimensional photodetector array, with its many closely packed light sensitive pixels, is employed to process the information contained in the diffracted radiation and present the information in the form of a conventional x-ray diffraction spectrum. By this arrangement, the angular range of the combined detector faces may be increased without loss of angular resolution. Further, the prohibitively expensive coupling together of a large number of individual linear diode photodetectors, which would be required to process signals generated by the diffracted radiation, is avoided.

7. 发明授权

US06909772B2 Method and apparatus for thin film thickness mapping 有权
标题翻译：用于薄膜厚度测绘的方法和装置
公开(公告)号：US06909772B2
公开(公告)日：2005-06-21
申请号：US10744413
申请日：2003-12-23
申请人： Krzysztof J. Kozaczek , David S. Kurtz , Paul R. Moran , Roger I. Martin , Patrick W. Dehaven , Kenneth P. Rodbell , Sandra G. Malhotra
发明人： Krzysztof J. Kozaczek , David S. Kurtz , Paul R. Moran , Roger I. Martin , Patrick W. Dehaven , Kenneth P. Rodbell , Sandra G. Malhotra
IPC分类号： G01B15/02 , G01N23/20
CPC分类号： G01N23/20 , G01B15/02
摘要： An apparatus and method for mapping film thickness of textured polycrystalline thin films. Multiple sample films of known thicknesses are provided, and each is irradiated by x-ray at a measurement point to generate a diffraction image that captures a plurality of diffraction arcs. Texture information (i.e., pole densities) of each sample film is calculated based on multiple incomplete pole figures collected from the diffraction image and used to correct the x-ray diffraction intensities obtained from such sample film. Corrected and integrated diffraction intensities of the sample films are then correlated to respective known film thicknesses of such films, and the correlation so determined can be used to map the film thickness of a textured polycrystalline thin film of unknown thickness, based on the corrected and integrated diffraction intensity calculated for such thin film.
摘要翻译：用于绘制纹理多晶薄膜的膜厚度的装置和方法。提供了已知厚度的多个样品膜，并且在测量点将X射线照射，以产生捕获多个衍射弧的衍射图像。基于从衍射图像收集的多个不完全极数来计算每个样品膜的纹理信息（即极点密度），并用于校正从这种样品膜获得的x射线衍射强度。然后将样品膜的校正和积分的衍射强度与这些膜的各自已知的膜厚度相关联，并且所确定的相关性可用于基于校正和积分的图形来绘制未知厚度的纹理多晶薄膜的膜厚度为这种薄膜计算的衍射强度。

8. 发明授权

US06678347B1 Method and apparatus for quantitative phase analysis of textured polycrystalline materials 有权
标题翻译：纹理多晶材料的定量相分析方法和装置
公开(公告)号：US06678347B1
公开(公告)日：2004-01-13
申请号：US10205717
申请日：2002-07-26
申请人： Krzysztof J. Kozaczek , David S. Kurtz , Paul R. Moran , Roger I. Martin
发明人： Krzysztof J. Kozaczek , David S. Kurtz , Paul R. Moran , Roger I. Martin
IPC分类号： G01N23207
CPC分类号： G01N23/207
摘要： A method for quantitatively determining the phase composition of a sample mixture that comprises two or more textured polycrystalline materials, based on corrected and integrated x-ray diffraction intensities. The effect of texture has been analytically eliminated from such corrected and integrated x-ray diffraction intensities, based on the texture information obtained from the sample mixture.
摘要翻译：基于校正和积分的x射线衍射强度，定量测定包含两种或多种纹理多晶材料的样品混合物的相组成的方法。基于从样品混合物获得的纹理信息，已经从这种校正和积分的x射线衍射强度中分析地消除了纹理的影响。

9. 发明授权

US06301330B1 Apparatus and method for texture analysis on semiconductor wafers 有权
标题翻译：用于半导体晶圆上纹理分析的装置和方法
公开(公告)号：US06301330B1
公开(公告)日：2001-10-09
申请号：US09365063
申请日：1999-07-30
申请人： David S. Kurtz , Krzysztof J. Kozaczek , Paul R. Moran
发明人： David S. Kurtz , Krzysztof J. Kozaczek , Paul R. Moran
IPC分类号： G01N23223
CPC分类号： G01N23/20 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： An apparatus and method for performing rapid, high-resolution polycrystalline crystallographic texture analysis, by calculating an Orientation Distribution Function (ODF) from partial pole figures obtained from x-ray diffraction measurements on large samples, e.g., 200 millimeter diameter wafers. The measurement apparatus includes a 2-D area x-ray detector and a collimated x-ray source arranged in a specific, fixed spatial relationship dependant on the properties of the sample to be measured, and also includes a particular wafer motion assembly. The wafer motion assembly includes three mutually orthogonal rectilinear translation stages, and a &phgr; rotation stage mounted thereon, as an uppermost motion stage, with its range restricted to 180° of rotation. &thgr;-2&thgr; and &khgr; motions are eliminated, and the close deployment of the x-ray source and area detector to the measuring spot on the wafer is such that the detector covers a sufficient range of 2&thgr; and &khgr; to capture multiple diffraction arcs in each frame. The invention employs a new and advantageous texture analysis protocol to determine ODF from the severely truncated pole figures thus obtained, through comparison of experimental ODF figures with calculated ones. The resulting system is fast, accurate, amenable to automation, and does not require highly skilled personnel to operate.
摘要翻译：通过从大样品（例如200毫米直径的晶片）上的x射线衍射测量获得的部分极数计算定向分布函数（ODF）来执行快速，高分辨率多晶结构织构分析的装置和方法。该测量装置包括二维区域X射线检测器和准直的X射线源，其以取决于要测量的样品的性质的特定固定的空间关系排列，并且还包括特定的晶片运动组件。晶片运动组件包括三个相互正交的直线平移平台和安装在其上的旋转平台作为最上面的运动台，其范围限制在180°的旋转角度。 theta-2theta和＆khgr; 消除了运动，并且将x射线源和面积检测器紧密地部署到晶片上的测量点，使得检测器覆盖了足够的2θ和khgr范围; 以捕获每个帧中的多个衍射弧。本发明采用新的和有利的纹理分析协议，通过将实验ODF数据与计算出的ODF值进行比较来确定由此获得的严重截断极数的ODF。所产生的系统快速，准确，适合于自动化，并且不需要高技能人员操作。

10. 发明授权

US5848122A Apparatus for rapid in-situ X-ray stress measurement during thermal cycling of semiconductor wafers 失效
标题翻译：用于在半导体晶片的热循环期间快速原位X射线应力测量的装置
公开(公告)号：US5848122A
公开(公告)日：1998-12-08
申请号：US823967
申请日：1997-03-25
申请人： David S. Kurtz
发明人： David S. Kurtz
IPC分类号： G01N23/20 , G01R31/265
CPC分类号： G01R31/265 , G01N23/20033
摘要： An apparatus for making rapid in-situ thermal stress measurements includes a controlled atmosphere test chamber for receiving and holding a test sample, and a heating zone within the test chamber confined to the near vicinity of the test sample. A test sample holder, a test sample heater, an x-y translation stage and a rotating stage are mounted within the test chamber. An X-ray source is positioned for producing an incident X-ray beam directed at the test sample from different inclination angles. The incident X-ray beam passes through a long but narrow X-ray window in the test chamber, diffracts from the test sample back through the same X-ray window and continues outside of the chamber to an X-ray detector. The diffracted X-ray beam is converted to light. The light is transmitted through optical fibers and is detected by a CCD array. The invention uses an advantageous scintillation material and a slow scan, fiber-optic compatible CCD photo-sensor array. This photo-sensor array enables the use of a long active detector along the 2.theta. arc and a long working distance between the test sample and the detector.
摘要翻译：用于进行快速原位热应力测量的装置包括用于接收和保持测试样品的受控气氛测试室和限制在测试样品附近的测试室内的加热区。测试样品架，测试样品加热器，x-y平移台和旋转台安装在测试室内。定位X射线源，用于从不同的倾斜角产生指向测试样品的入射X射线束。入射的X射线束通过测试室中的长而窄的X射线窗口，从测试样品通过相同的X射线窗口衍射，并将其继续到室外到X射线检测器。衍射的X射线束被转换为光。光通过光纤传输，并由CCD阵列检测。本发明使用有利的闪烁材料和慢扫描的光纤兼容的CCD光电传感器阵列。该光电传感器阵列使得能够使用沿着2θ弧的长有源检测器和测试样品与检测器之间的长工作距离。

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