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1. 发明申请

US20060110533A1 Methods and apparatus for forming a titanium nitride layer 审中-公开
标题翻译：用于形成氮化钛层的方法和装置
公开(公告)号：US20060110533A1
公开(公告)日：2006-05-25
申请号：US11281163
申请日：2005-11-17
申请人： Wan-Goo Hwang , Myeong-Jin Kim , Seung-Ki Chae , Hyun-Seok Lim , Kyoung-Ho Jang
发明人： Wan-Goo Hwang , Myeong-Jin Kim , Seung-Ki Chae , Hyun-Seok Lim , Kyoung-Ho Jang
IPC分类号： C23C16/00 , B05C11/00
CPC分类号： H01L21/67109 , C23C16/34 , C23C16/45546 , H01L21/28556 , H01L21/67757
摘要： A method of forming a titanium nitride layer by an atomic layer deposition process using a batch-type vertical reaction furnace is described wherein a first source gas including a titanium precursor is provided onto substrates loaded in a process chamber for a first time period; a first purge gas is introduced into the process chamber for a second time period shorter than the first time period; a second source gas including nitrogen is provided onto the substrates for a third time period substantially identical to the first time period; and, a second purge gas is introduced into the process chamber for a fourth time period substantially identical to the second time period. Titanium nitride layers having uniform thickness and good step coverage may thus be formed while realizing a greatly reduced manufacturing time.
摘要翻译：描述了通过使用间歇式立式反应炉的原子层沉积工艺形成氮化钛层的方法，其中包括钛前体的第一源气体在第一时间段内被装载到处理室中的基板上; 将第一吹扫气体引入处理室中比第一时间段短的第二时间段; 包括氮的第二源气体在基板上提供与第一时间段基本相同的第三时间段; 并且将第二吹扫气体与第二时间段基本相同的第四时间段引入到处理室中。因此可以在实现大大缩短的制造时间的同时形成具有均匀厚度和良好阶梯覆盖的氮化钛层。

2. 发明申请

US20060175304A1 Method of forming layers on substrates using microwave energy and apparatus for performing the same 审中-公开
标题翻译：使用微波能量在基板上形成层的方法和用于执行该层的设备的方法
公开(公告)号：US20060175304A1
公开(公告)日：2006-08-10
申请号：US11346597
申请日：2006-02-01
申请人： Wan-Goo Hwang , Seung-Ki Chae , Myeong-Jin Kim , Kyoung-Ho Jang
发明人： Wan-Goo Hwang , Seung-Ki Chae , Myeong-Jin Kim , Kyoung-Ho Jang
IPC分类号： B23K9/00 , B23K9/02
CPC分类号： B23K10/027 , B23K2103/14 , C23C8/36 , C23C16/45578 , C23C16/4584 , C23C16/511
摘要： In a method and an apparatus for forming layers on substrates, a plurality of substrates is supported by a boat in a processing chamber, and a processing gas is supplied into the processing chamber through a nozzle pipe. The processing gas supplied into processing chamber is excited in plasma state by microwave energy applied through a microwave antenna, and thus layers having uniform thickness may be formed on the substrates by the excited processing gas in the plasma state.
摘要翻译：在用于在基板上形成层的方法和装置中，多个基板由处理室中的船支撑，并且处理气体通过喷嘴管供给到处理室。供给到处理室中的处理气体通过微波天线施加的微波能量被等离子体激发，因此可以通过处于等离子体状态的激发处理气体在基板上形成具有均匀厚度的层。

3. 发明申请

US20060169201A1 Apparatus for supplying gas and apparatus for forming a layer having the same 审中-公开
标题翻译：用于供给气体的装置和用于形成具有该气体的装置的装置
公开(公告)号：US20060169201A1
公开(公告)日：2006-08-03
申请号：US11346549
申请日：2006-02-01
申请人： Wan-Goo Hwang , Seung-Ki Chae , Myeong-Jin Kim , Seoung-Chang Baek , Sung-Wook Park , Un-Chan Baek , Hyun-Wook Lee , Kyoung-Ho Jang , Seong-Ju Choi , Il-Kyoung Kim
发明人： Wan-Goo Hwang , Seung-Ki Chae , Myeong-Jin Kim , Seoung-Chang Baek , Sung-Wook Park , Un-Chan Baek , Hyun-Wook Lee , Kyoung-Ho Jang , Seong-Ju Choi , Il-Kyoung Kim
IPC分类号： B05B7/00
CPC分类号： C23C16/4486 , C23C16/45565 , C23C16/45574
摘要： In a gas supplying apparatus used to form a layer on a substrate, a liquid reactant is introduced into an atomizer through a liquid mass flow controller and an on-off valve. An aerosol mist formed by the atomizer is introduced into a vaporizer and then vaporized. The on-off valve is coupled with the atomizer and controlled by a valve controller of the liquid mass flow controller. The on-off valve is opened to form the layer and closed during downtime of a layer formation apparatus to prevent leakage of the remaining liquid reactant in a connecting conduit between the liquid mass flow controller and the on-off valve.
摘要翻译：在用于在基板上形成层的气体供给装置中，液体反应物通过液体质量流量控制器和开关阀引入雾化器。将由雾化器形成的气溶胶雾化物引入蒸发器中然后汽化。开关阀与雾化器耦合并由液体质量流量控制器的阀控制器控制。开关阀打开以形成层并且在层形成装置的停机期间关闭，以防止液体质量流量控制器和开关阀之间的连接导管中剩余的液体反应物泄漏。

4. 发明申请

US20060110534A1 Methods and apparatus for forming a titanium nitride layer 审中-公开
标题翻译：用于形成氮化钛层的方法和装置
公开(公告)号：US20060110534A1
公开(公告)日：2006-05-25
申请号：US11281774
申请日：2005-11-17
申请人： Wan-Goo Hwang , Seung-Ki Chae , Young-Kyou Park , Jung-Il Ahn , Kyoung-Ho Jang , Myeong-Jin Kim
发明人： Wan-Goo Hwang , Seung-Ki Chae , Young-Kyou Park , Jung-Il Ahn , Kyoung-Ho Jang , Myeong-Jin Kim
IPC分类号： C23C16/00 , B05C11/00
CPC分类号： C23C16/34 , C23C16/45527 , C23C16/45546
摘要： A method of forming titanium nitride layers by an atomic layer deposition process using a batch-type vertical reaction furnace is described wherein the titanium nitride layers are formed on one or more substrates in accordance with a reaction between a first source gas including TiCl4 gas and a second source gas including an NH3 gas. After forming the titanium nitride layers, chlorine remaining in the titanium nitride layers is removed using a treatment gas which includes an NH3 gas. The substrates are revolved by a predetermined rotation angle between repeated titanium nitride layer formation cycles. The process of forming the titanium nitride layers and rotating the substrates is alternately repeated resulting in titanium nitride layers having substantially uniform thicknesses and low specific resistance.
摘要翻译：其中描述了通过使用分批式立式反应炉的原子层沉积工艺形成氮化钛层的方法，其中根据包括TiCl 3的第一源气体之间的反应在一个或多个衬底上形成氮化钛层， 4气体和包括NH 3气体的第二源气体。在形成氮化钛层之后，使用包括NH 3气体的处理气体除去残留在氮化钛层中的氯。在重复的氮化钛层形成循环之间，基板旋转预定的旋转角度。交替地重复形成氮化钛层和旋转衬底的过程，导致具有基本均匀的厚度和低电阻率的氮化钛层。

5. 发明授权

US08361274B2 Etching apparatus and etching method 有权
标题翻译：蚀刻装置和蚀刻方法
公开(公告)号：US08361274B2
公开(公告)日：2013-01-29
申请号：US11032651
申请日：2005-01-10
申请人： Kwang-Myung Lee , Ki-Young Yun , Il-Kyoung Kim , Sung-Wook Park , Seung-Ki Chae , No-Hyun Huh , Jae-Wook Kim , Jae-Hyuck An , Woo-Seok Kim , Myeong-Jin Kim , Kyoung-Ho Jang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
发明人： Kwang-Myung Lee , Ki-Young Yun , Il-Kyoung Kim , Sung-Wook Park , Seung-Ki Chae , No-Hyun Huh , Jae-Wook Kim , Jae-Hyuck An , Woo-Seok Kim , Myeong-Jin Kim , Kyoung-Ho Jang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
IPC分类号： H01L21/3065 , C23C16/455 , C23C16/00
CPC分类号： H01L21/6708 , H01J37/3244 , H01L21/3065
摘要： A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.
摘要翻译：真空处理装置具有：真空处理槽; 第一气体导入部，被构造成使得自由基状态的第一处理气体被引入到真空处理槽中并被引导到半导体晶片; 以及第二气体导入部，其被构造成使得与第一处理气体反应的第二处理气体被引入到真空处理槽中并被引导到半导体晶片。第二气体导入部具有设置在为第一气体导入部设置的导入管的任一侧的位置的两个喷淋喷嘴。根据该真空处理装置，可以实现多个处理对象的高速处理。此外，可以确保处理后的加工对象的面内均匀性。

6. 发明申请

US20050150861A1 Etching apparatus and etching method 有权
标题翻译：蚀刻装置和蚀刻方法
公开(公告)号：US20050150861A1
公开(公告)日：2005-07-14
申请号：US11032651
申请日：2005-01-10
申请人： Kwang-Myung Lee , Ki-Young Yun , Il-Kyoung Kim , Sung-Wook Park , Seung-Ki Chae , No-Hyun Huh , Jae-Wook Kim , Jae-Hyuck An , Woo-Seok Kim , Myeong-Jin Kim , Kyoung-Ho Jang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
发明人： Kwang-Myung Lee , Ki-Young Yun , Il-Kyoung Kim , Sung-Wook Park , Seung-Ki Chae , No-Hyun Huh , Jae-Wook Kim , Jae-Hyuck An , Woo-Seok Kim , Myeong-Jin Kim , Kyoung-Ho Jang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
IPC分类号： H01L21/00 , H01L21/3065 , C23F1/00 , B01D53/02 , B01D59/26
CPC分类号： H01L21/6708 , H01J37/3244 , H01L21/3065
摘要： A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.
摘要翻译：真空处理装置具有：真空处理槽; 第一气体导入部，被构造成使得自由基状态的第一处理气体被引入到真空处理槽中并被引导到半导体晶片; 以及第二气体导入部，其被构造成使得与第一处理气体反应的第二处理气体被引入到真空处理槽中并被引导到半导体晶片。第二气体导入部具有设置在为第一气体导入部设置的导入管的任一侧的位置的两个喷淋喷嘴。根据该真空处理装置，可以实现多个处理对象的高速处理。此外，可以确保处理后的加工对象的面内均匀性。

7. 发明授权

US07497963B2 Etching method 有权
标题翻译：蚀刻方法
公开(公告)号：US07497963B2
公开(公告)日：2009-03-03
申请号：US11032393
申请日：2005-01-10
申请人： Kwang-Myung Lee , Ki-Young Yun , Seung-Ki Chae , No-Hyun Huh , Wan-Goo Hwang , Jung-Hyun Hwang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
发明人： Kwang-Myung Lee , Ki-Young Yun , Seung-Ki Chae , No-Hyun Huh , Wan-Goo Hwang , Jung-Hyun Hwang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
IPC分类号： B44C1/22
CPC分类号： H01L21/67063 , H01L21/31116
摘要： In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamber 12 excessively, and hence the etching efficiency is high. As a result, according to this etching method, not only the in-plane distribution of the etching amount becomes more uniform, but also the etching rate is increased more than in the conventional etching method.
摘要翻译：在该蚀刻方法中，由于在将自由基引入处理室之前引入蚀刻气体，当引入自由基时，蚀刻气体已被吸附在基板的表面上。因此，自由基与吸附在基板表面的蚀刻气体反应，反应在基板表面上均匀地进行。结果，在基板的表面上不会发生不均匀的蚀刻。此外，由于蚀刻气体和自由基之间的反应发生在基板的表面上，所以根据蚀刻气体和自由基之间的反应产生的中间产物迅速与蚀刻对象反应。因此，中间产品没有过度地从处理室12中排出，因此蚀刻效率高。结果，根据该蚀刻方法，不仅蚀刻量的面内分布变得更均匀，而且比常规蚀刻方法更多地提高蚀刻速率。

8. 发明申请

US20050153553A1 Etching method 有权
标题翻译：蚀刻方法
公开(公告)号：US20050153553A1
公开(公告)日：2005-07-14
申请号：US11032393
申请日：2005-01-10
申请人： Kwang-Myung Lee , Ki-Young Yun , Seung-Ki Chae , No-Hyun Huh , Wan-Goo Hwang , Jung-Hyun Hwang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
发明人： Kwang-Myung Lee , Ki-Young Yun , Seung-Ki Chae , No-Hyun Huh , Wan-Goo Hwang , Jung-Hyun Hwang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/302 , H01L21/311 , H01L21/461 , H01L21/768 , H01L23/522
CPC分类号： H01L21/67063 , H01L21/31116
摘要： In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamber 12 excessively, and hence the etching efficiency is high. As a result, according to this etching method, not only the in-plane distribution of the etching amount becomes more uniform, but also the etching rate is increased more than in the conventional etching method.
摘要翻译：在该蚀刻方法中，由于在将自由基引入处理室之前引入蚀刻气体，当引入自由基时，蚀刻气体已被吸附在基板的表面上。因此，自由基与吸附在基板表面的蚀刻气体反应，反应在基板表面上均匀地进行。结果，在基板的表面上不会发生不均匀的蚀刻。此外，由于蚀刻气体和自由基之间的反应发生在基板的表面上，所以根据蚀刻气体和自由基之间的反应产生的中间产物迅速与蚀刻对象反应。因此，中间产品没有过度地从处理室12中排出，因此蚀刻效率高。结果，根据该蚀刻方法，不仅蚀刻量的面内分布变得更均匀，而且比常规蚀刻方法更多地提高蚀刻速率。

9. 发明申请

US20120196439A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120196439A1
公开(公告)日：2012-08-02
申请号：US13289107
申请日：2011-11-04
申请人： Kook-Joo KIM , Jin-Ho Kim , Seung-Ki Chae , Pil-Kwon Jun , Sun-Hee Park , Gyoung-Eun Byun
发明人： Kook-Joo KIM , Jin-Ho Kim , Seung-Ki Chae , Pil-Kwon Jun , Sun-Hee Park , Gyoung-Eun Byun
IPC分类号： H01L21/28
CPC分类号： H01L23/522 , H01L21/76829 , H01L2924/0002 , H01L2924/00
摘要： In a method of forming a conductive pattern structure of a semiconductor device, a first insulating interlayer is formed on a substrate. A first wiring is formed to pass through the first insulating interlayer. An etch stop layer and a second insulating interlayer are sequentially formed on the first insulating interlayer. A second wiring is formed to pass through the second insulating interlayer and the etch stop layer. A dummy pattern is formed to pass through the second insulating layer and the etch stop layer at the same time as forming the second wiring. The second wiring is electrically connected to the first wiring. The dummy pattern is electrically isolated from the second wiring.
摘要翻译：在形成半导体器件的导电图案结构的方法中，在基板上形成第一绝缘中间层。形成第一布线以通过第一绝缘中间层。在第一绝缘中间层上依次形成蚀刻停止层和第二绝缘中间层。形成第二布线以通过第二绝缘中间层和蚀刻停止层。在形成第二布线的同时，形成虚设图形以通过第二绝缘层和蚀刻停止层。第二布线电连接到第一布线。虚设图案与第二布线电隔离。

10. 发明申请

US20070263194A1 METHOD OF EXPOSING A WAFER TO A LIGHT, AND RETICLE, RETICLE ASSEMBLY AND EXPOSING APPARATUS FOR PERFORMING THE SAME 审中-公开
标题翻译：将光照射到灯的方法，以及用于实施其的反射装置和曝光装置
公开(公告)号：US20070263194A1
公开(公告)日：2007-11-15
申请号：US11830439
申请日：2007-07-30
申请人： Byong-Cheol Park , Dong-Hwa Shin , Seung-Ki Chae , Sang-Ho Lee
发明人： Byong-Cheol Park , Dong-Hwa Shin , Seung-Ki Chae , Sang-Ho Lee
IPC分类号： G03F1/00
CPC分类号： G03F7/70425 , G03B27/42 , G03F7/70466
摘要： A method of exposing a wafer to a light comprises transferring an image onto a plurality of shot areas by irradiating a projection light, each of the plurality of shot areas including at least one die area defined on the wafer on which a photoresist film is formed, and scanning the at least one die area adjacent to an edge portion of the wafer by irradiating a scanning light.
摘要翻译：将晶片暴露于光的方法包括通过照射投影光将图像转印到多个照射区域上，所述多个照射区域中的每一个包括限定在其上形成有光致抗蚀剂膜的晶片上的至少一个管芯区域，并通过照射扫描光来扫描与晶片的边缘部分相邻的至少一个管芯区域。

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