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1. 发明申请

US20050150861A1 Etching apparatus and etching method 有权
标题翻译：蚀刻装置和蚀刻方法
公开(公告)号：US20050150861A1
公开(公告)日：2005-07-14
申请号：US11032651
申请日：2005-01-10
申请人： Kwang-Myung Lee , Ki-Young Yun , Il-Kyoung Kim , Sung-Wook Park , Seung-Ki Chae , No-Hyun Huh , Jae-Wook Kim , Jae-Hyuck An , Woo-Seok Kim , Myeong-Jin Kim , Kyoung-Ho Jang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
发明人： Kwang-Myung Lee , Ki-Young Yun , Il-Kyoung Kim , Sung-Wook Park , Seung-Ki Chae , No-Hyun Huh , Jae-Wook Kim , Jae-Hyuck An , Woo-Seok Kim , Myeong-Jin Kim , Kyoung-Ho Jang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
IPC分类号： H01L21/00 , H01L21/3065 , C23F1/00 , B01D53/02 , B01D59/26
CPC分类号： H01L21/6708 , H01J37/3244 , H01L21/3065
摘要： A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.
摘要翻译：真空处理装置具有：真空处理槽; 第一气体导入部，被构造成使得自由基状态的第一处理气体被引入到真空处理槽中并被引导到半导体晶片; 以及第二气体导入部，其被构造成使得与第一处理气体反应的第二处理气体被引入到真空处理槽中并被引导到半导体晶片。第二气体导入部具有设置在为第一气体导入部设置的导入管的任一侧的位置的两个喷淋喷嘴。根据该真空处理装置，可以实现多个处理对象的高速处理。此外，可以确保处理后的加工对象的面内均匀性。

2. 发明授权

US08361274B2 Etching apparatus and etching method 有权
标题翻译：蚀刻装置和蚀刻方法
公开(公告)号：US08361274B2
公开(公告)日：2013-01-29
申请号：US11032651
申请日：2005-01-10
申请人： Kwang-Myung Lee , Ki-Young Yun , Il-Kyoung Kim , Sung-Wook Park , Seung-Ki Chae , No-Hyun Huh , Jae-Wook Kim , Jae-Hyuck An , Woo-Seok Kim , Myeong-Jin Kim , Kyoung-Ho Jang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
发明人： Kwang-Myung Lee , Ki-Young Yun , Il-Kyoung Kim , Sung-Wook Park , Seung-Ki Chae , No-Hyun Huh , Jae-Wook Kim , Jae-Hyuck An , Woo-Seok Kim , Myeong-Jin Kim , Kyoung-Ho Jang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
IPC分类号： H01L21/3065 , C23C16/455 , C23C16/00
CPC分类号： H01L21/6708 , H01J37/3244 , H01L21/3065
摘要： A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.
摘要翻译：真空处理装置具有：真空处理槽; 第一气体导入部，被构造成使得自由基状态的第一处理气体被引入到真空处理槽中并被引导到半导体晶片; 以及第二气体导入部，其被构造成使得与第一处理气体反应的第二处理气体被引入到真空处理槽中并被引导到半导体晶片。第二气体导入部具有设置在为第一气体导入部设置的导入管的任一侧的位置的两个喷淋喷嘴。根据该真空处理装置，可以实现多个处理对象的高速处理。此外，可以确保处理后的加工对象的面内均匀性。

3. 发明申请

US20050136591A1 Method of and apparatus for performing sequential processes requiring different amounts of time in the manufacturing of semiconductor devices 有权
公开(公告)号：US20050136591A1
公开(公告)日：2005-06-23
申请号：US11034950
申请日：2005-01-14
申请人： Jae-Hyuck An
发明人： Jae-Hyuck An
IPC分类号： H01L21/02 , C23C16/02 , C23C16/54 , H01L21/00 , H01L21/311 , H01L21/8242 , B65G49/07
CPC分类号： H01L21/67276 , C23C16/0236 , C23C16/54 , H01L21/31116 , Y10S414/139
摘要： A method of manufacturing a semiconductor device includes first and second processes, the latter requiring more processing time. An apparatus for performing the semiconductor manufacturing process includes a first reactor, and a plurality of second reactors for each first reactor. A first group of wafers are subjected to the first process within the first reactor, and are then transferred into a second reactor as isolated from the outside air. The first group of wafers is subjected to the second process within the second reactor. At the same time, a second group of wafers are subjected to the first process within the first reactor. After the first process is completed, the second group of wafers is transferred into an unoccupied one of the second reactors as isolated from the outside air. There, the second group of wafers is subjected to the second process. Accordingly, process failures otherwise due to the exposure of the wafers are minimized, and productivity is high despite the difference in the processing times.

4. 发明授权

US6146461A Chemical vapor deposition apparatus having a gas diffusing nozzle designed to diffuse gas equally at all levels 有权
标题翻译：具有气体扩散喷嘴的化学气相沉积装置，其设计成在各个等级均匀地扩散气体
公开(公告)号：US6146461A
公开(公告)日：2000-11-14
申请号：US497496
申请日：2000-02-04
申请人： Chang-Zip Yang , Tae-Chul Kim , Jae-Hyuck An
发明人： Chang-Zip Yang , Tae-Chul Kim , Jae-Hyuck An
IPC分类号： H01L21/205 , C23C16/44 , C23C16/455 , C23C16/00 , C23C16/445
CPC分类号： C23C16/45578 , C23C16/455
摘要： A chemical vapor deposition apparatus includes a processing chamber formed by an external tube, and an internal tube installed inside the external tube, a wafer boat securable within the processing chamber, and a single gas diffusing nozzle extending vertically within the processing chamber. The gas diffusing nozzle includes an outer tubular member having a closed top end, a diaphragm dividing the interior of the tubular member into two regions disposed side by side, and columns of gas diffusing openings extending through the tubular member on opposite sides of the diaphragm, respectively. The gas infused through the gas diffusing nozzle is forced by the diaphragm to rise up one side region of the tubular member and then descend through the other side region. In this way, the gas is evenly distributed to the wafers situated in the boat. Accordingly, the reaction time necessary for the gas to form identical layers on the wafers is minimized, the quality and reliability of the wafers is improved, and the production rate is increased.
摘要翻译：化学气相沉积装置包括由外管形成的处理室和安装在外管内的内管，在处理室内可固定的晶片舟，以及在处理室内垂直延伸的单个气体扩散喷嘴。气体扩散喷嘴包括具有闭合顶端的外部管状部件，将管状部件的内部分隔成并排设置的两个区域的隔膜和在隔膜的相对侧延伸穿过管状部件的气体扩散开口列，分别。通过气体扩散喷嘴输入的气体被隔膜迫使上升，从而使管状构件的一侧区域上升，然后下降通过另一侧区域。以这种方式，气体均匀分布在位于船中的晶片上。因此，气体在晶片上形成相同层所需的反应时间最小化，提高了晶片的质量和可靠性，并提高了生产率。

5. 发明授权

US07223702B2 Method of and apparatus for performing sequential processes requiring different amounts of time in the manufacturing of semiconductor devices 有权
标题翻译：在制造半导体器件中执行需要不同时间量的顺序处理的方法和装置
公开(公告)号：US07223702B2
公开(公告)日：2007-05-29
申请号：US11034950
申请日：2005-01-14
申请人： Jae-Hyuck An
发明人： Jae-Hyuck An
IPC分类号： H01L21/302
CPC分类号： H01L21/67276 , C23C16/0236 , C23C16/54 , H01L21/31116 , Y10S414/139
摘要： A method of manufacturing a semiconductor device includes first and second processes, the latter requiring more processing time. An apparatus for performing the semiconductor manufacturing process includes a first reactor, and a plurality of second reactors for each first reactor. A first group of wafers are subjected to the first process within the first reactor, and are then transferred into a second reactor as isolated from the outside air. The first group of wafers is subjected to the second process within the second reactor. At the same time, a second group of wafers are subjected to the first process within the first reactor. After the first process is completed, the second group of wafers is transferred into an unoccupied one of the second reactors as isolated from the outside air. There, the second group of wafers is subjected to the second process. Accordingly, process failures otherwise due to the exposure of the wafers are minimized, and productivity is high despite the difference in the processing times.
摘要翻译：制造半导体器件的方法包括第一和第二工艺，后者需要更多的处理时间。用于执行半导体制造工艺的装置包括第一反应器和用于每个第一反应器的多个第二反应器。将第一组晶片在第一反应器内进行第一工艺，然后从外部空气中分离出来转移到第二反应器中。第一组晶片在第二反应器内进行第二工序。同时，第二组晶片在第一反应器内进行第一工序。在第一工艺完成之后，将第二组晶片从外部空气中分离出来转移到第二反应器中的未占用的一个。在那里，第二组晶片经受第二次处理。因此，由于晶片的曝光而导致的处理失败被最小化，并且尽管处理时间有差异，但生产率也很高。

6. 发明授权

US06464930B2 Furnace of apparatus for manufacturing a semiconductor device having a heat blocker for preventing heat loss during the unloading of wafers 有权
标题翻译：一种用于制造具有用于防止晶片卸载期间的热损失的热阻器的半导体器件的装置的炉
公开(公告)号：US06464930B2
公开(公告)日：2002-10-15
申请号：US09726327
申请日：2000-12-01
申请人： Jae-Hyuck An , Chang-Zip Yang , Tae-Chul Kim , Hyun Han
发明人： Jae-Hyuck An , Chang-Zip Yang , Tae-Chul Kim , Hyun Han
IPC分类号： C21D106
CPC分类号： C30B25/10 , C23C16/46
摘要： The present invention relates to a semiconductor manufacturing furnace having a heat blocker mounted to an elevating plate of the furnace. The heat blocker prevents the internal temperature of the furnace from decreasing radically when a wafer boat is lowered from the processing chamber of the furnace by the elevating plate. The heat blocker includes a sealed case, a plurality of horizontally extending heat-reflecting plates disposed in the case, and a plurality of support pins for supporting and fixing the reflecting plates in place. The heat-reflecting plates reflect heat back up into the processing chamber, as the elevating plate lowers the wafer boat, to keep the internal temperature of the heater stable. This not only enhances the productivity of the manufacturing process but also enhances the uniformity of the processed wafers.
摘要翻译：本发明涉及一种具有安装在炉的升降板上的热阻器的半导体制造炉。当晶片舟皿通过升降板从炉的处理室下降时，阻热器防止炉内部温度的降低。散热器包括密封壳体，设置在壳体中的多个水平延伸的热反射板，以及用于将反射板支撑并固定到位的多个支撑销。当升降板降低晶片舟时，热反射板将热量反射回处理室，以保持加热器的内部温度稳定。这不仅提高了制造工艺的生产率，而且还提高了加工晶片的均匀性。

7. 发明授权

US06911112B2 Method of and apparatus for performing sequential processes requiring different amounts of time in the manufacturing of semiconductor devices 有权
标题翻译：在制造半导体器件中执行需要不同时间量的顺序处理的方法和装置
公开(公告)号：US06911112B2
公开(公告)日：2005-06-28
申请号：US10265699
申请日：2002-10-08
申请人： Jae-Hyuck An
发明人： Jae-Hyuck An
IPC分类号： H01L21/02 , C23C16/02 , C23C16/54 , H01L21/00 , H01L21/311 , C23F1/00 , C23C16/00 , H01L21/306 , B65G49/007
CPC分类号： H01L21/67276 , C23C16/0236 , C23C16/54 , H01L21/31116 , Y10S414/139
摘要： A method of manufacturing a semiconductor device includes first and second processes, the latter requiring more processing time. An apparatus for performing the semiconductor manufacturing process includes a first reactor, and a plurality of second reactors for each first reactor. A first group of wafers are subjected to the first process within the first reactor, and are then transferred into a second reactor as isolated from the outside air. The first group of wafers is subjected to the second process within the second reactor. At the same time, a second group of wafers are subjected to the first process within the first reactor. After the first process is completed, the second group of wafers is transferred into an unoccupied one of the second reactors as isolated from the outside air. There, the second group of wafers is subjected to the second process. Accordingly, process failures otherwise due to the exposure of the wafers are minimized, and productivity is high despite the difference in the processing times.
摘要翻译：制造半导体器件的方法包括第一和第二工艺，后者需要更多的处理时间。用于执行半导体制造工艺的装置包括第一反应器和用于每个第一反应器的多个第二反应器。将第一组晶片在第一反应器内进行第一工艺，然后从外部空气中分离出来转移到第二反应器中。第一组晶片在第二反应器内进行第二工序。同时，第二组晶片在第一反应器内进行第一工序。在第一工艺完成之后，将第二组晶片从外部空气中分离出来转移到第二反应器中的未占用的一个。在那里，第二组晶片经受第二次处理。因此，由于晶片的曝光而导致的处理失败被最小化，并且尽管处理时间有差异，但生产率也很高。

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