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1. 发明授权

US4930042A Capacitive accelerometer with separable damping and sensitivity 失效
标题翻译：电容式加速度计具有可分离的阻尼和灵敏度
公开(公告)号：US4930042A
公开(公告)日：1990-05-29
申请号：US317240
申请日：1989-02-28
申请人： Walter J. Wiegand , James L. Swindal , Richard E. Swarts , Robert H. Bullis , Mario T. Lopiccolo , Daniel H. Grantham , Arthur G. Foyt
发明人： Walter J. Wiegand , James L. Swindal , Richard E. Swarts , Robert H. Bullis , Mario T. Lopiccolo , Daniel H. Grantham , Arthur G. Foyt
IPC分类号： G01P1/00 , G01P15/08 , G01P15/125
CPC分类号： G01P15/125 , G01P1/003 , G01P15/0802
摘要： A micromachined three-plate capacitive accelerometer incorporates hinges attached to top and bottom surfaces of the proof mass that are symmetric about X and Y axes and also about diagonal axes; passageways for gas film damping in the fixed members that do not affect the capacitance to any significant degree; and provision for independently selecting two of the parameters sensitivity, capacitance and maximum acceleration.

2. 发明授权

US5245504A Methodology for manufacturing hinged diaphragms for semiconductor sensors 失效
标题翻译：制造半导体传感器铰链隔膜的方法
公开(公告)号：US5245504A
公开(公告)日：1993-09-14
申请号：US906598
申请日：1992-08-06
申请人： Robert H. Bullis , Arthur G. Foyt , James L. Swindal
发明人： Robert H. Bullis , Arthur G. Foyt , James L. Swindal
IPC分类号： G01L9/00 , G01P15/08 , G01P15/125
CPC分类号： G01L9/0073 , G01L9/0042 , G01P15/0802 , G01P15/125 , G01P2015/084 , Y10T29/435
摘要： Manufacturing hinged diaphragms for semiconductor sensors (e.g., accelerometers, pressure transducers, etc.), from a SIMOX wafer (W, FIG. 3 A), in which the internal, insulating, silicon dioxide (SiO.sub.2) layer (3) is used as an etch stop in removing silicon from the underside of the wafer by etching with an appropriately selective etch, producing the reduced thickness, peripheral "hinge" areas (9; FIG. 3 A to FIG. 3 B), with the exposed part of the silicon dioxide layer being removed in a subsequent etching step (FIG. 3 B to FIG. 3C) using a different, selective etch. This produces a single layer, single-crystal, silicon "hinge" (9'; FIG. 3C) of uniform, continuous material, enhancing the linearity of diaphragm movement during use and the sensor's sensitivity and accuracy. (See FIG. 4 for methodological steps.) If the top, silicon region of the SIMOX wafer is insufficiently thick for the desired diaphragm thickness, additional layer(s) of epitaxial silicon are grown on the upper side of the silicon crystal until the desired thickness is reached; the same being true for increasing the thickness of the silicon substrate. If having reduced thickness areas for the "hinge" on both sides of the diaphragm are desired, a SIMOX wafer having an intermediate, silicon dioxide layer on both the "bottom" and the "top" of the wafer is used, with each layer serving as an etch stop on its respective side, with the then exposed portions of the silicon dioxide layers thereafter being removed, leaving flanking, alternating, silicon "hinge" bridges (90a/90b; FIG. 5A-C).
摘要翻译：制造用于半导体传感器（例如，加速度计，压力传感器等）的铰接隔膜，其中使用内部绝缘二氧化硅（SiO 2）层（3）作为SIMOX晶片（W，图3A）通过用适当选择的蚀刻蚀刻从而从晶片的下侧移除硅的蚀刻停止件，产生减小的厚度，周边的“铰链”区域（9;图3A至图3B），其中暴露的部分使用不同的选择性蚀刻在随后的蚀刻步骤（图3B至图3C）中去除二氧化硅层。这产生均匀连续材料的单层，单晶，硅“铰链”（9';图3C），增强了使用过程中隔膜运动的线性度和传感器的灵敏度和精度。（对于方法步骤，参见图4）如果SIMOX晶片的顶部硅区域对于期望的隔膜厚度不够厚，则在硅晶体的上侧生长附加的外延硅层，直到所需的达到厚度; 对于增加硅衬底的厚度也是如此。如果需要具有减小膜片两侧的“铰链”的厚度区域，则使用在晶片的“底部”和“顶部”上具有中间的二氧化硅层的SIMOX晶片，每层服务作为其相应侧上的蚀刻停止层，随后其二氧化硅层的暴露部分被去除，留下侧面，交替的硅“铰链”桥（90a / 90b;图5A-C）。

3. 发明授权

US5448444A Capacitive pressure sensor having a reduced area dielectric spacer 失效
标题翻译：电容式压力传感器具有减小面积的电介质间隔物
公开(公告)号：US5448444A
公开(公告)日：1995-09-05
申请号：US188257
申请日：1994-01-28
申请人： Paul L. Provenzano , James L. Swindal , Robert J. Kuhlberg , Charles B. Brahm , Harold D. Meyer , Frank W. Gobetz , Walter J. Wiegand , Robert H. Bullis
发明人： Paul L. Provenzano , James L. Swindal , Robert J. Kuhlberg , Charles B. Brahm , Harold D. Meyer , Frank W. Gobetz , Walter J. Wiegand , Robert H. Bullis
IPC分类号： G01L9/00 , H01G7/00
CPC分类号： G01L9/0073 , H01L2924/163
摘要： A silicon capacitive pressure sensor is disclosed that has a glass dielectric material sputter-deposited onto a silicon substrate of the sensor. After deposition of the bulk dielectric material, the glass is patterned and etched to form a pair of concentric rings. An inner ring is of a circular shape, while the outer ring is of an octagonal shape. As compared to prior art dielectric spacers which are of a single ring of relatively wide thickness, the pair of concentric rings disclosed herein significantly reduce the parasitic capacitance of the glass dielectric material, thereby increasing the sensitivity of the sensor.
摘要翻译：公开了一种硅电容式压力传感器，其具有溅射沉积在传感器的硅衬底上的玻璃介电材料。在沉积体电介质材料之后，对玻璃进行图案化和蚀刻以形成一对同心环。内圈为圆形，外圈为八角形。与现有技术的具有相对较宽厚度的单个环的电介质间隔物相比，本文公开的一对同心环显着降低了玻璃介电材料的寄生电容，从而增加了传感器的灵敏度。

4. 发明授权

US4954925A Capacitive sensor with minimized dielectric drift 失效
标题翻译：具有最小电介质漂移的电容式传感器
公开(公告)号：US4954925A
公开(公告)日：1990-09-04
申请号：US292282
申请日：1988-12-30
申请人： Robert H. Bullis , James L. Swindal , Walter J. Wiegand, Jr. , Charles B. Brahm , Harold D. Meyer
发明人： Robert H. Bullis , James L. Swindal , Walter J. Wiegand, Jr. , Charles B. Brahm , Harold D. Meyer
IPC分类号： H01G7/00 , G01L9/00 , G01L9/12 , H01L29/84
CPC分类号： G01L9/0073
摘要： Pressure sensors utilizing capacitance variations to sense pressure variations of the silicon-on-silicon type in which dielectric drift, which occurs in such sensors due to the changing characteristics primarily of the dielectric wall support layer (16) extending up from the silicon substrate (12) between it and the silicon diaphragm (11), is minimized by in turn minimizing the contribution of the dielectric layer to the total capacitance of the sensor (10), reducing the dielectric contribution of the capacitance from, for example, about fifty (50%) percent down to a range of no more than about twenty to twenty-five (20-25%) percent and down typically to sixteen to about ten (16%-10%) percent of the total capacitance or lower. Three exemplary approaches are illustrated, namely, etching the outer edges of the dielectric layer, making the wall(s) it form(s) thinner (FIG. 2); reducing the horizontal thickness of the effective peripheral, lower edge(s) of the silicon diaphragm where it interfaces in contact with the wall(s) formed by the dielectric layer (FIG. 3); and/or reducing the horizontal thickness of the effective peripheral, upper edge(s) of the silicon base or substrate where it interfaces with the wall(s) formed by the dielectric layer (FIUG. 4); and/or a combination of one or more of these approaches or any other approach that minimizes the effective capacitive contribution of the peripheral dielectric layer to the total capacitance of the sensor and hence to long term drift.

5. 发明授权

US5535626A Sensor having direct-mounted sensing element 失效
标题翻译：传感器具有直接安装的传感元件
公开(公告)号：US5535626A
公开(公告)日：1996-07-16
申请号：US361277
申请日：1994-12-21
申请人： Robert H. Bullis , James L. Swindal , Walter J. Wiegand , Charles R. Winston, Jr.
发明人： Robert H. Bullis , James L. Swindal , Walter J. Wiegand , Charles R. Winston, Jr.
IPC分类号： G01P1/02 , G01P15/125 , G01P15/08
CPC分类号： G01P1/023 , G01P15/125 , G01P2015/0828
摘要： A silicon capacitive microsensor which is sensitive to acceleration forces includes a silicon capacitive sensing element 10 comprising three silicon layers 12,16,26 having glass dielectric layers 14,24 between each pair of silicon layers with the middle silicon layer 16 consisting of a proof mass 18 suspended between the two glass dielectric layers 14,24 by a silicon hinge 20 which is connected to a slightly thicker silicon support layer 17 around the periphery (FIG. 3 ) between the glass layers 14,24 (FIG. 1 ). Three metallic bond pads 40,42,44 on the surface 45 of the silicon layers 26,16,12, respectively, are soldered to circuit trace pads 108 on a circuit board 100 which has a glass upper layer 104 and a silicon support layer 102. The thermal expansion coefficient between the glass layer 104 and the sensing element 10 are substantially the same, thereby minimizing thermally induced stresses on the sensing element 10 and minimizing inaccuracies associated therewith. Such direct mounting greatly simplifies the manufacturing process for such sensors. Also, such direct mounting eliminates flying leads thereby allowing the sensing element 10 to be fabricated to much smaller dimensions than that of the prior art.
摘要翻译：对加速力敏感的硅电容微传感器包括硅电容感测元件10，其包括在每对硅层之间具有玻璃介电层14,24的三个硅层12,16,26，中间硅层16由检测质量块 18通过硅铰链20悬挂在两个玻璃介电层14,24之间，该硅铰链20连接到玻璃层14,24（图1）周围的周边（图3）之间的略厚的硅支撑层17。分别在硅层26,16,12的表面45上的三个金属接合焊盘40,42,44焊接到电路板100上的电路迹线焊盘108，电路板100具有玻璃上层104和硅支撑层102 玻璃层104和感测元件10之间的热膨胀系数基本上相同，从而最小化感应元件10上的热致应力并最小化与之相关联的不准确度。这种直接安装大大简化了这种传感器的制造过程。此外，这种直接安装消除了飞行引线，从而允许将感测元件10制造成比现有技术小得多的尺寸。

6. 发明授权

US5381299A Capacitive pressure sensor having a substrate with a curved mesa 失效
标题翻译：电容式压力传感器具有带有弯曲台面的基板
公开(公告)号：US5381299A
公开(公告)日：1995-01-10
申请号：US188952
申请日：1994-01-28
申请人： Paul L. Provenzano , James L. Swindal , Robert J. Kuhlberg , Charles B. Brahm , Harold D. Meyer , Frank W. Gobetz , Walter J. Wiegand , Robert H. Bullis
发明人： Paul L. Provenzano , James L. Swindal , Robert J. Kuhlberg , Charles B. Brahm , Harold D. Meyer , Frank W. Gobetz , Walter J. Wiegand , Robert H. Bullis
IPC分类号： G01L9/00 , H04R19/00 , H01G7/00
CPC分类号： G01L9/0073 , H04R19/00 , Y10T29/435
摘要： A silicon capacitive pressure sensor is disclosed having a silicon substrate and a silicon diaphragm separated by a glass dielectric spacer. The substrate has an upper surface formed as a mesa which is generally curved in shape, the curvature being concave. Due to manufacturing constraints the mesa upper surface comprises a series of concentric rings that approximate the desired concave shape. The step height and diameter of the rings are such that, at full deflection of the diaphragm, the diaphragm touches the center of the mesa, but not the edges of the individual steps. That is, letting the edges or corners of the steps define a curve, the radius of curvature of the diaphragm is smaller than the radius of curvature of the locus of the step corners.
摘要翻译：公开了一种硅电容式压力传感器，其具有由玻璃介电隔离物隔开的硅衬底和硅隔膜。基板具有形成为台面的上表面，该台面通常为弯曲形状，曲率为凹形。由于制造约束，台面上表面包括一系列近似所需凹形状的同心环。环的台阶高度和直径使得在隔膜的完全偏转时，隔膜接触台面的中心，而不是各个台阶的边缘。也就是说，让台阶的边缘或角落定义曲线，光阑的曲率半径小于阶梯角的曲率半径。

7. 发明授权

US5375034A Silicon capacitive pressure sensor having a glass dielectric deposited using ion milling 失效
标题翻译：具有使用离子铣削沉积的玻璃电介质的硅电容式压力传感器
公开(公告)号：US5375034A
公开(公告)日：1994-12-20
申请号：US161335
申请日：1993-12-02
申请人： Arthur G. Foyt , Paul L. Provenzano , James L. Swindal , Robert A. Wagner
发明人： Arthur G. Foyt , Paul L. Provenzano , James L. Swindal , Robert A. Wagner
IPC分类号： G01L9/00 , H01G7/00
CPC分类号： G01L9/0073
摘要： A silicon capacitive pressure sensor is disclosed having a silicon diaphragm and a silicon substrate arranged in parallel and separated by a glass dielectric spacer. The glass is deposited onto a surface of the substrate using an ion milling machine. The sensor further includes a transition piece attached to a second layer of glass insulator disposed between the silicon diaphragm and the transition piece. The transition piece has a throughbore formed therein for applying a fluid to a surface of the silicon diaphragm, the fluid having a pressure desired to be measured by the sensor. The glass disposed between the diaphragm and the transition piece is deposited onto the transition piece using the ion milling process.
摘要翻译：公开了一种硅电容式压力传感器，其具有平行布置并由玻璃介电隔离物隔开的硅隔膜和硅基板。使用离子铣床将玻璃沉积在基底的表面上。所述传感器还包括连接到设置在所述硅隔膜和所述过渡件之间的第二玻璃绝缘层的过渡件。过渡件具有形成在其中的通孔，用于将流体施加到硅隔膜的表面，该流体具有期望由传感器测量的压力。设置在隔膜和过渡件之间的玻璃使用离子铣削工艺沉积到过渡件上。

8. 发明授权

US4998179A Capacitive semiconductive sensor with hinged diaphragm for planar movement 失效
标题翻译：具有铰链膜片的电容式半导体传感器用于平面运动
公开(公告)号：US4998179A
公开(公告)日：1991-03-05
申请号：US317236
申请日：1989-02-28
申请人： Daniel H. Grantham , James L. Swindal
发明人： Daniel H. Grantham , James L. Swindal
IPC分类号： G01L1/14 , G01L9/00 , G01L9/12 , H01L29/84
CPC分类号： G01L9/0073
摘要： A semiconductive sensor or transducer (100), for example, a pressure sensor utilizing capacitance variations to sense pressure variations, of the silicon-on-silicon type, in which a "hinge" (111A) in the form of a relatively thin, encircling area is provided at the outer peripheral edge of the diaphragm, causing the central region (117) of the diaphragm (111) to move in a linear, non-curved or planar manner (compare FIG. 2 to FIG. 1), providing a linear response or frequency output. A first embodiment (FIG. 3) of the hinged silicon-on-silicon capacitive pressure sensor, which is basically cylindrical in shape, has the hinge formed by etching, milling or machining away some of the thickness of the diaphragm at its outer peripheral edge. In a second embodiment (FIG. 4) the hinge is formed by etching away some of the thickness of the diaphragm at its outer peripheral edge and using a glass layer to control the etching using a selective chemical enchant which is selective for silicon but does not attack the glass; while a third embodiment (FIG. 5) uses aluminum in place of the glass. In a fourth embodiment (FIG. 6) the hinge is formed effectively on the opposite side of the diaphragm from the shown in the embodiments of FIGS. 3-5. The hinge structure can be used in other forms of semiconductive transducers, which use the relative movement of a semiconductive diaphragm with respect to another semiconductive layer or substrate.

9. 发明授权

US4467394A Three plate silicon-glass-silicon capacitive pressure transducer 失效
标题翻译：三板硅玻璃硅电容式压力传感器
公开(公告)号：US4467394A
公开(公告)日：1984-08-21
申请号：US527531
申请日：1983-08-29
申请人： Daniel H. Grantham , James L. Swindal
发明人： Daniel H. Grantham , James L. Swindal
IPC分类号： G01L13/02 , G01L9/00 , G01L9/12 , H04R19/04 , H01G7/00
CPC分类号： H04R19/04 , G01L9/0073
摘要： A three plate silicon-glass-silicon capacitive pressure transducer includes a conductive silicon diaphragm and substrate relatively spaced by a dielectric body having disposed therein a central electrode positioned between the diaphragm and substrate to form a pressure responsive capacitance with the diaphragm at a value inversely proportional to a pressure signal applied to a pressure sensing surface of the diaphragm.
摘要翻译：三板硅玻璃 - 硅电容式压力传感器包括导电硅膜片和衬底，其相对间隔开介质体，其中设置有位于隔膜和衬底之间的中心电极，以形成压力响应电容，其中膜片的值成反比到施加到隔膜的压力感测表面的压力信号。

10. 发明授权

US4883768A Mesa fabrication in semiconductor structures 失效
标题翻译：半导体结构中的Mesa制造
公开(公告)号：US4883768A
公开(公告)日：1989-11-28
申请号：US317309
申请日：1989-02-28
申请人： James L. Swindal , Daniel H. Grantham
发明人： James L. Swindal , Daniel H. Grantham
IPC分类号： G01L9/00 , H01L21/306 , H01L21/308 , H01L21/311 , H01L21/316 , H01L29/84
CPC分类号： H01L21/02238 , G01L9/0042 , G01L9/0073 , H01L21/30604 , H01L21/308 , H01L21/31111 , H01L21/31662 , Y10S438/911 , Y10S438/977
摘要： Semiconductor structures for electronic use, such as for example a silicon-glass-silicon pressure sensor (Fig. 3), include mesa or pedestal structures (12A) extending up from silicon substrates (12). In the invention the mesa structures are fabricated in an oxidation process applied in a cyclical fashion (steps 1-3 through 1-5 of Fig. 1). Each cycle includes a photolithographic operation to protect the previously grown oxide on the mesas from etching. During each cycle less oxide is grown (or conversely silicon consumed) on the mesas than in the preceding cycle, while equivalent amounts of oxide are grown on non-mesa areas in each cycle. As a result, the tops of the mesas get higher and higher above the surrounding areas in each cycle. In order to prevent the leaving of any oxide "scraps" in a non-mesa area during the oxidation steps, resulting from a flaw in the mask, a double exposure process is used, utilizing two completely independent masks, with a positive working photo-resist.

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