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1. 发明授权

US5968588A In-situ liquid flow rate estimation and verification by sonic flow method 失效
标题翻译：声流法原位液体流量估算与验证
公开(公告)号：US5968588A
公开(公告)日：1999-10-19
申请号：US819674
申请日：1997-03-17
申请人： Visweswaren Sivaramakrishnan , Yen-Kun Wang , Fong Chang , Thanh Pham , Jeff Plante
发明人： Visweswaren Sivaramakrishnan , Yen-Kun Wang , Fong Chang , Thanh Pham , Jeff Plante
IPC分类号： C23C16/448 , C23C16/52 , C23C16/00
CPC分类号： C23C16/52 , C23C16/4481
摘要： An apparatus for in-situ control of the flow of a liquid precursor into a deposition chamber comprises a liquid injection system having a liquid injection outlet connected to a chamber inlet line upstream of the deposition chamber. The liquid injection system includes a liquid precursor supply, a carrier gas supply, a vaporizer, and a controller managing flows of the liquid precursor and carrier gas to the chamber. A bypass line is connected to the chamber inlet line and includes a bypass valve, a sonic orifice, and a pressure gauge upstream of the sonic orifice. To calibrate the flow of the liquid precursor, a flow of carrier gas is directed into the bypass line at a carrier gas sonic flow rate. A first steady state pressure is measured with the pressure gauge. The liquid precursor is vaporized and directed to the flow of carrier gas into the bypass line. A second steady state pressure is measured with the pressure gauge. Calibration information is computed using the first steady state pressure and second steady state pressure based on sonic flow theory. The calibration information is used to calibrate the controller to correct deviations in the liquid flow rate and achieve a target liquid precursor flow rate for improving wafer uniformity.
摘要翻译：用于原位控制液体前体进入沉积室的装置包括液体注射系统，其具有连接到沉积室上游的室入口管的液体注入口。液体注射系统包括液体前体供应源，载气供应器，蒸发器和控制液体前体和载气流到腔室的控制器。旁路管路连接到腔室入口管线，并且包括旁通阀，声波孔口和声波孔口上游的压力计。为了校准液体前体的流动，以载气声音流速将载气流引导到旁路管线中。用压力表测量第一稳态压力。液体前体蒸发并引导到载气流入旁通管线。用压力表测量第二稳态压力。基于声流理论，使用第一稳态压力和第二稳态压力计算校准信息。校准信息用于校准控制器以校正液体流速中的偏差，并实现目标液体前体流速以改善晶片均匀性。

2. 发明申请

US20130032084A1 SILICON WAFERS BY EPITAXIAL DEPOSITION 有权
标题翻译：硅晶体通过外延沉积
公开(公告)号：US20130032084A1
公开(公告)日：2013-02-07
申请号：US13483002
申请日：2012-05-29
申请人： Visweswaren Sivaramakrishnan , Tirunelveli S. Ravi , Quoc Vinh Truong , Jean R. Vatus , Visweswaren Sivaramakrishnan
发明人： Visweswaren Sivaramakrishnan , Tirunelveli S. Ravi , Andrzej Kaszuba , Quoc Vinh Truong , Jean R. Vatus
IPC分类号： C30B25/14 , C30B25/12
CPC分类号： C30B25/14 , C30B25/105 , C30B25/12 , C30B25/165 , C30B25/20 , C30B29/06 , H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/0262 , H01L31/1804
摘要： A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors.
摘要翻译：通过在具有交叉流沉积的硅前体耗尽模式中通过外延沉积沉积薄单晶硅晶片的系统可以包括：具有低总热容量，高发射率和小体积的基板载体; 具有快速升温，高效热量生产和加热空间控制的灯模块; 以及设计用于交叉流处理的歧管。此外，衬底载体可以包括热反射器，以控制从载体和/或热扼流器的边缘的热损失，以将载体与歧管热隔离，允许对歧管进行独立的温度控制。载体和基底可以被配置用于在基底的两侧上沉积 - 在两侧上具有释放层的基底和载体构造成在基底的两个表面上具有相等的工艺气流。高体积可以由包括多个微型间歇反应器的沉积系统来解决。

3. 发明申请

US20100215872A1 High Throughput Multi-Wafer Epitaxial Reactor 有权
标题翻译：高通量多晶硅外延电抗器
公开(公告)号：US20100215872A1
公开(公告)日：2010-08-26
申请号：US12392448
申请日：2009-02-25
申请人： Visweswaren Sivaramakrishnan , Kedarnath Sangam , Tirunelveli S. Ravi , Andrzej Kaszuba , Quoc Vinh Truong
发明人： Visweswaren Sivaramakrishnan , Kedarnath Sangam , Tirunelveli S. Ravi , Andrzej Kaszuba , Quoc Vinh Truong
IPC分类号： C23C16/56
CPC分类号： C23C16/481 , C23C16/0209 , C23C16/455 , C23C16/4582 , C23C16/46 , C23C16/463 , C23C16/54 , C30B25/105 , C30B25/12 , C30B29/06
摘要： An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.
摘要翻译：公开了一种能够在多个晶片上同时沉积薄膜的外延反应器。在沉积期间，许多晶片被包含在晶片套筒内，其包括间隔开的多个晶片承载板，以最小化处理体积。工艺气体优先流入由一个或多个灯模块加热的晶片套筒的内部容积。吹扫气体在反应器室内的晶片套筒外部流动，以最小化壁沉积。此外，灯模组中各灯的照明顺序可以进一步提高晶片套筒内沉积速率变化的线性。为了改善均匀性，工艺气体流动的方向可以在横流构型中变化。将灯排序与多反应器系统中的交叉流处理相结合，可实现高通量沉积，具有良好的膜均匀性和有效利用工艺气体。

4. 发明申请

US20090044753A1 METHODS TO IMPROVE THE IN-FILM DEFECTIVITY OF PECVD AMORPHOUS CARBON FILMS 有权
标题翻译：提高PECVD非晶碳膜薄膜缺陷度的方法
公开(公告)号：US20090044753A1
公开(公告)日：2009-02-19
申请号：US12255638
申请日：2008-10-21
申请人： Deenesh Padhi , Chiu Chan , Sudha Rathi , Ganesh Balasubramanian , Jianhua Zhou , Karthik Janakiraman , Martin J. Seamons , Visweswaren Sivaramakrishnan , Derek R. Witty , Hichem M'Saad
发明人： Deenesh Padhi , Chiu Chan , Sudha Rathi , Ganesh Balasubramanian , Jianhua Zhou , Karthik Janakiraman , Martin J. Seamons , Visweswaren Sivaramakrishnan , Derek R. Witty , Hichem M'Saad
IPC分类号： H01L21/30
CPC分类号： C23C16/45565 , C23C16/0254 , C23C16/26 , C23C16/4404
摘要： An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.
摘要翻译：提供了具有用于半导体应用的保护涂层的制品及其制造方法。在某些实施例中，提供了在半导体处理室中使用的制品的铝表面的涂覆方法。该方法包括提供处理室; 将物品放入处理室; 将包含碳源的第一气体流入所述处理室; 将包含氮源的第二气体流入所述处理室; 在室内形成等离子体; 以及在铝表面上沉积涂层材料。在某些实施方案中，涂层材料包含无定形含碳氮层。在某些实施例中，制品包括构造成将气体输送到处理室的喷头。

5. 发明授权

US07354288B2 Substrate support with clamping electrical connector 有权
标题翻译：带夹紧电连接器的基板支撑
公开(公告)号：US07354288B2
公开(公告)日：2008-04-08
申请号：US11145258
申请日：2005-06-03
申请人： Kazutoshi Maehara , Visweswaren Sivaramakrishnan , Kentaro Wada , Mark A. Fodor , Andrzei Kaszuba
发明人： Kazutoshi Maehara , Visweswaren Sivaramakrishnan , Kentaro Wada , Mark A. Fodor , Andrzei Kaszuba
IPC分类号： H01R4/60
CPC分类号： C23C16/4586 , H01L21/68757
摘要： A substrate support comprises a ceramic disc with an electrode that is chargeable through an electrode terminal. An electrical connector connects an external power source to the electrode terminal. The electrical connector has a pair of opposing pincer arms, a groove sized to fit around the electrode terminal, and a pair of through holes to receive a tightening assembly capable of tightening the opposing pincer arms about the electrode terminal.
摘要翻译：衬底支撑件包括具有可通过电极端子充电的电极的陶瓷盘。电连接器将外部电源连接到电极端子。电连接器具有一对相对的钳形臂，尺寸适于围绕电极端子的凹槽和一对通孔，用于接收能够围绕电极端子紧固相对的夹持臂的紧固组件。

6. 发明申请

US20050235916A1 Universal mid-frquency matching network 失效
标题翻译：通用中频匹配网络
公开(公告)号：US20050235916A1
公开(公告)日：2005-10-27
申请号：US10829520
申请日：2004-04-21
申请人： Eller Juco , Visweswaren Sivaramakrishnan , Mario Silvetti , Talex Sajoto
发明人： Eller Juco , Visweswaren Sivaramakrishnan , Mario Silvetti , Talex Sajoto
IPC分类号： C23C16/00 , C23C16/509 , H01J37/32
CPC分类号： H01J37/32082 , C23C16/5096 , H01J37/32183
摘要： A substrate processing system is provided with a processing chamber, an alternating voltage supply, and an impedance matching network. The processing chamber holds a substrate during processing and the alternating voltage supply is connected with the processing chamber to capacitively couple energy to a plasma formed within the processing chamber. The impedance matching network is coupled with the alternating voltage supply and has a variable resistive element and a variable reactive element, whose states respectively define distinct real and imaginary parts of an impedance.
摘要翻译：衬底处理系统设置有处理室，交流电压源和阻抗匹配网络。处理室在处理期间保持基板，并且交流电压供应与处理室连接以将能量电容耦合到处理室内形成的等离子体。阻抗匹配网络与交流电源耦合，并具有可变电阻元件和可变无功元件，其状态分别定义阻抗的不同实部和虚部。

7. 发明申请

US20050150452A1 Process kit design for deposition chamber 审中-公开
标题翻译：沉积室的工艺套件设计
公开(公告)号：US20050150452A1
公开(公告)日：2005-07-14
申请号：US10757021
申请日：2004-01-14
申请人： Soovo Sen , Mark Fodor , Martin Seamons , Priya Kulkarni , Visweswaren Sivaramakrishnan , Sudha Rathi , Tsutomu Shimayama , Thomas Nowak , Wendy Yeh
发明人： Soovo Sen , Mark Fodor , Martin Seamons , Priya Kulkarni , Visweswaren Sivaramakrishnan , Sudha Rathi , Tsutomu Shimayama , Thomas Nowak , Wendy Yeh
IPC分类号： C23C16/44 , C30B25/14 , C23C16/00
CPC分类号： C23C16/4412
摘要： The present invention provides a process kit for a semiconductor processing chamber. The processing chamber is a vacuum processing chamber that includes a chamber body defining an interior processing region. The processing region receives a substrate for processing, and also supports equipment pieces of the process kit. The process kit includes a pumping liner configured to be placed within the processing region of the processing chamber, and a C-channel liner configured to be placed along an outer diameter of the pumping liner. The pumping liner and the C-channel liner have novel interlocking features designed to inhibit parasitic pumping of processing or cleaning gases from the processing region. The invention further provides a semiconductor processing chamber having an improved process kit, such as the kit described. In one arrangement, the chamber is a tandem processing chamber.
摘要翻译：本发明提供了一种用于半导体处理室的处理套件。处理室是真空处理室，其包括限定内部处理区域的室主体。处理区域接收用于处理的基板，并且还支持处理套件的设备件。该处理套件包括构造成放置在处理室的处理区域内的泵送衬套，以及构造成沿着泵送衬套的外径放置的C形通道衬套。泵送衬管和C通道衬管具有新颖的互锁特征，其设计用于抑制来自处理区域的处理或清洁气体的寄生泵送。本发明还提供了一种具有改进的处理工具的半导体处理室，例如所述的套件。在一种布置中，室是串联处理室。

8. 发明申请

US20050042885A1 Methods of reducing plasma-induced damage for advanced plasma CVD dielectrics 失效
公开(公告)号：US20050042885A1
公开(公告)日：2005-02-24
申请号：US10645675
申请日：2003-08-20
申请人： Lihua Li , Tsutomu Tanaka , Tzu-Fang Huang , Li-Qun Xia , Dian Sugiarto , Visweswaren Sivaramakrishnan , Peter Lee , Mario Silvetti
发明人： Lihua Li , Tsutomu Tanaka , Tzu-Fang Huang , Li-Qun Xia , Dian Sugiarto , Visweswaren Sivaramakrishnan , Peter Lee , Mario Silvetti
IPC分类号： C23C16/40 , C23C16/509 , H01L21/312 , H01L21/316 , H01L21/768 , H01L21/31 , H01L21/469
CPC分类号： C23C16/5096 , C23C16/401 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/31612 , H01L21/31633 , H01L21/76801
摘要： A method for depositing an organosilicate layer on a substrate includes varying one or more processing conditions during a process sequence for depositing an organosilicate layer from a gas mixture comprising an organosilicon compound in the presence of RF power in a processing chamber. In one aspect, the distance between the substrate and a gas distribution manifold in the processing chamber is varied during processing. Preferably, the method of depositing an organosilicate layer minimizes plasma-induced damage to the substrate.

9. 发明授权

US06783118B2 Vaporizing reactant liquids for chemical vapor deposition film processing 失效
标题翻译：用于化学气相沉积膜处理的汽化反应液体
公开(公告)号：US06783118B2
公开(公告)日：2004-08-31
申请号：US09919633
申请日：2001-07-31
申请人： Visweswaren Sivaramakrishnan , John M. White
发明人： Visweswaren Sivaramakrishnan , John M. White
IPC分类号： B01F304
CPC分类号： C23C16/4481 , B01F3/022 , Y10S261/65
摘要： The disclosure relates to a vaporizer valve which accepts a carrier gas and a pressurized liquid and forms a mixture of the carrier gas and vaporized liquid. An internal cavity receives the carrier gas through a carrier aperture and the liquid through a liquid aperture, and the mixed gas and vapor are exhausted out of the cavity via a third aperture. A moveable diaphragm disposed adjacent to the liquid aperture forms a vaporization region having a pressure gradient. The liquid passing through this pressure gradient vaporizes due to expansion. By controlling the diaphragm position with a feedback control circuit responsive to a liquid flow rate monitor, the liquid flow rate may be controlled independently of the carrier gas flow rate.
摘要翻译：本公开涉及一种蒸发器阀，其接收载气和加压液体并形成载气和汽化液体的混合物。内腔通过载体孔接收载气，液体通过液体孔接收，并且混合气体和蒸气经由第三孔排出空腔。邻近液体孔设置的可移动隔膜形成具有压力梯度的蒸发区域。通过该压力梯度的液体由于膨胀而蒸发。通过利用响应于液体流速监测器的反馈控制电路来控制隔膜位置，可以独立于载气流量来控制液体流速。

10. 发明授权

US06224681B1 Vaporizing reactant liquids for chemical vapor deposition film processing 失效
标题翻译：用于化学气相沉积膜处理的汽化反应液体
公开(公告)号：US06224681B1
公开(公告)日：2001-05-01
申请号：US08574999
申请日：1995-12-19
申请人： Visweswaren Sivaramakrishnan , John M. White
发明人： Visweswaren Sivaramakrishnan , John M. White
IPC分类号： C23C1600
CPC分类号： C23C16/4481 , B01F3/022 , Y10S261/65
摘要： The disclosure relates to a vaporizer valve which accepts a carrier gas and a pressurized liquid and forms a mixture of the carrier gas and vaporized liquid. An internal cavity receives the carrier gas through a carrier aperture and the liquid through a liquid aperture, and the mixed gas and vapor are exhausted out of the cavity via a third aperture. A moveable diaphragm disposed adjacent to the liquid aperture forms a vaporization region having a pressure gradient. The liquid passing through this pressure gradient vaporizes due to expansion. By controlling the diaphragm position with a feedback control circuit responsive to a liquid flow rate monitor, the liquid flow rate may be controlled independently of the carrier gas flow rate.
摘要翻译：本公开涉及一种蒸发器阀，其接收载气和加压液体并形成载气和汽化液体的混合物。内腔通过载体孔接收载气，液体通过液体孔接收，并且混合气体和蒸气经由第三孔排出空腔。邻近液体孔设置的可移动隔膜形成具有压力梯度的蒸发区域。通过该压力梯度的液体由于膨胀而蒸发。通过利用响应于液体流速监测器的反馈控制电路来控制隔膜位置，可以独立于载气流量来控制液体流速。

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