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1. 发明授权

US06783118B2 Vaporizing reactant liquids for chemical vapor deposition film processing 失效
标题翻译：用于化学气相沉积膜处理的汽化反应液体
公开(公告)号：US06783118B2
公开(公告)日：2004-08-31
申请号：US09919633
申请日：2001-07-31
申请人： Visweswaren Sivaramakrishnan , John M. White
发明人： Visweswaren Sivaramakrishnan , John M. White
IPC分类号： B01F304
CPC分类号： C23C16/4481 , B01F3/022 , Y10S261/65
摘要： The disclosure relates to a vaporizer valve which accepts a carrier gas and a pressurized liquid and forms a mixture of the carrier gas and vaporized liquid. An internal cavity receives the carrier gas through a carrier aperture and the liquid through a liquid aperture, and the mixed gas and vapor are exhausted out of the cavity via a third aperture. A moveable diaphragm disposed adjacent to the liquid aperture forms a vaporization region having a pressure gradient. The liquid passing through this pressure gradient vaporizes due to expansion. By controlling the diaphragm position with a feedback control circuit responsive to a liquid flow rate monitor, the liquid flow rate may be controlled independently of the carrier gas flow rate.
摘要翻译：本公开涉及一种蒸发器阀，其接收载气和加压液体并形成载气和汽化液体的混合物。内腔通过载体孔接收载气，液体通过液体孔接收，并且混合气体和蒸气经由第三孔排出空腔。邻近液体孔设置的可移动隔膜形成具有压力梯度的蒸发区域。通过该压力梯度的液体由于膨胀而蒸发。通过利用响应于液体流速监测器的反馈控制电路来控制隔膜位置，可以独立于载气流量来控制液体流速。

2. 发明授权

US06224681B1 Vaporizing reactant liquids for chemical vapor deposition film processing 失效
标题翻译：用于化学气相沉积膜处理的汽化反应液体
公开(公告)号：US06224681B1
公开(公告)日：2001-05-01
申请号：US08574999
申请日：1995-12-19
申请人： Visweswaren Sivaramakrishnan , John M. White
发明人： Visweswaren Sivaramakrishnan , John M. White
IPC分类号： C23C1600
CPC分类号： C23C16/4481 , B01F3/022 , Y10S261/65
摘要： The disclosure relates to a vaporizer valve which accepts a carrier gas and a pressurized liquid and forms a mixture of the carrier gas and vaporized liquid. An internal cavity receives the carrier gas through a carrier aperture and the liquid through a liquid aperture, and the mixed gas and vapor are exhausted out of the cavity via a third aperture. A moveable diaphragm disposed adjacent to the liquid aperture forms a vaporization region having a pressure gradient. The liquid passing through this pressure gradient vaporizes due to expansion. By controlling the diaphragm position with a feedback control circuit responsive to a liquid flow rate monitor, the liquid flow rate may be controlled independently of the carrier gas flow rate.
摘要翻译：本公开涉及一种蒸发器阀，其接收载气和加压液体并形成载气和汽化液体的混合物。内腔通过载体孔接收载气，液体通过液体孔接收，并且混合气体和蒸气经由第三孔排出空腔。邻近液体孔设置的可移动隔膜形成具有压力梯度的蒸发区域。通过该压力梯度的液体由于膨胀而蒸发。通过利用响应于液体流速监测器的反馈控制电路来控制隔膜位置，可以独立于载气流量来控制液体流速。

3. 发明授权

US5976262A Vaporizing reactant liquids for chemical vapor deposition film processing 失效
公开(公告)号：US5976262A
公开(公告)日：1999-11-02
申请号：US574999
申请日：1995-12-19
申请人： Visweswaren Sivaramakrishnan , John M. White
发明人： Visweswaren Sivaramakrishnan , John M. White
摘要： The disclosure relates to a vaporizer valve which accepts a carrier gas and a pressurized liquid and forms a mixture of the carrier gas and vaporized liquid. An internal cavity receives the carrier gas through a carrier aperture and the liquid through a liquid aperture, and the mixed gas and vapor are exhausted out of the cavity via a third aperture. A moveable diaphragm disposed adjacent to the liquid aperture forms a vaporization region having a pressure gradient. The liquid passing through this pressure gradient vaporizes due to expansion. By controlling the diaphragm position with a feedback control circuit responsive to a liquid flow rate monitor, the liquid flow rate may be controlled independently of the carrier gas flow rate.

4. 发明授权

US07055809B2 Vaporizing reactant liquids for chemical vapor deposition film processing 失效
公开(公告)号：US07055809B2
公开(公告)日：2006-06-06
申请号：US10817396
申请日：2004-04-02
申请人： Visweswaren Sivaramakrishnan , John M. White
发明人： Visweswaren Sivaramakrishnan , John M. White
IPC分类号： B01F3/04
CPC分类号： C23C16/4481 , B01F3/022 , Y10S261/65
摘要： The disclosure relates to a vaporizer valve which accepts a carrier gas and a pressurized liquid and forms a mixture of the carrier gas and vaporized liquid. An internal cavity receives the carrier gas through a carrier aperture and the liquid through a liquid aperture, and the mixed gas and vapor are exhausted out of the cavity via a third aperture. A moveable diaphragm disposed adjacent to the liquid aperture forms a vaporization region having a pressure gradient. The liquid passing through this pressure gradient vaporizes due to expansion. By controlling the diaphragm position with a feedback control circuit responsive to a liquid flow rate monitor, the liquid flow rate may be controlled independently of the carrier gas flow rate.

5. 发明授权

US10676817B2 Flip edge shadow frame 有权
公开(公告)号：US10676817B2
公开(公告)日：2020-06-09
申请号：US13569064
申请日：2012-08-07
申请人： Qunhua Wang , Soo Young Choi , Robin L. Tiner , John M. White , Gaku Furuta , Beom Soo Park
发明人： Qunhua Wang , Soo Young Choi , Robin L. Tiner , John M. White , Gaku Furuta , Beom Soo Park
IPC分类号： C23C16/04 , C23C16/458 , C23C14/04
摘要： Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.

6. 发明授权

US09068262B2 Tightly fitted ceramic insulator on large area electrode 有权
标题翻译：在大面积电极上紧密配合陶瓷绝缘子
公开(公告)号：US09068262B2
公开(公告)日：2015-06-30
申请号：US13110184
申请日：2011-05-18
申请人： Jozef Kudela , Jonghoon Baek , John M. White , Robin Tiner , Suhail Anwar , Gaku Furuta
发明人： Jozef Kudela , Jonghoon Baek , John M. White , Robin Tiner , Suhail Anwar , Gaku Furuta
IPC分类号： C23C16/455 , C23C16/509 , H01J37/32
CPC分类号： B05B1/185 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/3244 , H01J37/32532 , H01J37/32623 , H01J37/32651 , Y10T137/6851
摘要： Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.
摘要翻译：本发明的实施例通常包括用于喷头组件的屏蔽框架组件和具有屏蔽框架组件的喷头组件，所述屏蔽框架组件包括紧密配合在真空处理室中的喷头周边周围的绝缘体。在一个实施例中，喷头组件包括气体分配板和环绕气体分布板的周边边缘的多片框架组件。多件式框架组件允许气体分配板的膨胀而不产生可能导致电弧的间隙。在其它实施例中，绝缘体被定位成具有集中在位于其中的气体分配板的周边的电场，从而减少电弧电势。

7. 发明授权

US08674844B2 Detecting plasma chamber malfunction 有权
标题翻译：检测等离子体室故障
公开(公告)号：US08674844B2
公开(公告)日：2014-03-18
申请号：US12661699
申请日：2010-03-19
申请人： Beom Soo Park , Hong Soon Kim , Soo Young Choi , James Hoffman , Suhail Anwar , John M. White
发明人： Beom Soo Park , Hong Soon Kim , Soo Young Choi , James Hoffman , Suhail Anwar , John M. White
IPC分类号： G08B21/00
CPC分类号： H01J37/32183 , H01J37/32935 , H01J37/3299
摘要： Malfunction of a component within an RF-powered plasma chamber is detected by observing an operating condition of the plasma chamber and detecting when the operating condition deviates from a previously observed range bounded by lower and upper limits. The lower and upper limits are determined by observing the minimum and maximum values of that operating condition during the processing of workpieces throughout one or more plasma chamber cleaning cycles immediately preceding the most recent cleaning of the plasma chamber.
摘要翻译：通过观察等离子体室的操作状态并检测何时操作条件偏离由下限和上限限定的先前观察范围，来检测RF供电的等离子体室内部件的故障。通过在紧邻等离子体室的最近清洁之前的一个或多个等离子体室清洁循环期间观察工件处理期间该操作条件的最小值和最大值来确定下限和上限。

8. 发明申请

US20130140009A1 ROBUST OUTLET PLUMBING FOR HIGH POWER FLOW REMOTE PLASMA SOURCE 审中-公开
公开(公告)号：US20130140009A1
公开(公告)日：2013-06-06
申请号：US13722637
申请日：2012-12-20
申请人： John M. White , Soo Young Choi , Beom Soo Park , Gaku Furuta , Young Jin Choi , Robin L. Tiner
发明人： John M. White , Soo Young Choi , Beom Soo Park , Gaku Furuta , Young Jin Choi , Robin L. Tiner
IPC分类号： F28D7/00
CPC分类号： F28D7/00 , C23C16/4405 , F28D2021/0078 , F28F9/26
摘要： The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.

9. 发明申请

US20130126331A1 Guided Wave Applicator with Non-Gaseous Dielectric for Plasma Chamber 有权
标题翻译：用于等离子室的非气体介质的导波涂敷器
公开(公告)号：US20130126331A1
公开(公告)日：2013-05-23
申请号：US13360652
申请日：2012-01-27
申请人： Jozef Kudela , Tsutomu Tanaka , Carl A. Sorensen , Suhail Anwar , John M. White
发明人： Jozef Kudela , Tsutomu Tanaka , Carl A. Sorensen , Suhail Anwar , John M. White
IPC分类号： H01P3/16 , H05H1/46 , H01L21/02
CPC分类号： H01P3/16 , H01J37/32229 , H01L21/02 , H01L21/02104 , H05H1/46 , H05H2001/4622
摘要： A guided wave applicator comprising two electrically conductive waveguide walls and a waveguide dielectric. The volume of the waveguide dielectric is composed of non-gaseous dielectric material and is positioned between the two waveguide walls. The waveguide dielectric includes first and second longitudinal ends and includes first, second, third and fourth sides extending longitudinally between the two longitudinal ends. The first waveguide wall is positioned so that it covers the first side of the waveguide dielectric, and the second waveguide wall is positioned so that it covers the second side of the waveguide dielectric. In operation, electrical power can be supplied to one or both longitudinal ends of the waveguide dielectric, whereby the power can be coupled to a plasma through the exposed sides of the waveguide dielectric.
摘要翻译：导波装置，其包括两个导电波导壁和波导电介质。波导介质的体积由非气体电介质材料构成，并且位于两个波导壁之间。波导电介质包括第一和第二纵向端部，并且包括在两个纵向端部之间纵向延伸的第一，第二，第三和第四侧面。第一波导壁被定位成使得其覆盖波导电介质的第一侧，并且第二波导壁被定位成使得其覆盖波导电介质的第二侧。在操作中，可以向波导介质的一个或两个纵向端提供电力，由此可以通过波导电介质的暴露侧将功率耦合到等离子体。

10. 发明授权

US08438990B2 Multi-electrode PECVD source 有权
标题翻译：多电极PECVD源
公开(公告)号：US08438990B2
公开(公告)日：2013-05-14
申请号：US12353638
申请日：2009-01-14
申请人： Jozef Kudela , John M. White
发明人： Jozef Kudela , John M. White
IPC分类号： C23C16/00 , H01L21/00
CPC分类号： C23C16/5096 , C23C16/54 , H01J37/32091 , H01J37/32183 , H01J37/3244 , H01J37/32568 , H01J37/32752
摘要： Embodiments of the present invention generally relate to methods and apparatus for plasma generation in plasma processes. The methods and apparatus generally include a plurality of electrodes. The electrodes are connected to a RF power source, which powers the electrodes out of phase from one another. Adjacent electrodes are electrically isolated from one another by electrically insulating members disposed between and coupled to the electrodes. Processing gas may be delivered and/or withdrawn through the electrodes and/or the electrically insulating members. The substrate may remain electrically floating because the plasma may be capacitively coupled to it through a differential RF source drive.
摘要翻译：本发明的实施例一般涉及等离子体工艺中等离子体产生的方法和装置。所述方法和装置通常包括多个电极。电极连接到RF电源，该电源使电极彼此相位不相位。相邻的电极通过设置在电极之间并耦合到电极的电绝缘构件彼此电隔离。处理气体可以通过电极和/或电绝缘构件传送和/或抽出。由于等离子体可以通过差分RF源驱动电容耦合到其上，基板可能保持电浮置。

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