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    • 3. 发明授权
    • Bit-by-bit Vt-correction operation for nonvolatile semiconductor one-transistor cell, nor-type flash EEPROM
    • 非易失性半导体单晶体管单元,非型闪存EEPROM的逐位Vt校正操作
    • US06515910B1
    • 2003-02-04
    • US10076826
    • 2002-02-15
    • Peter W. LeeHsing-Ya TsaoTam TranFu-Chang Hsu
    • Peter W. LeeHsing-Ya TsaoTam TranFu-Chang Hsu
    • G11C1606
    • G11C16/3409G11C16/3404G11C16/344G11C16/3445
    • A method to test the erase condition of memory cells in a memory array device is achieved. The method is further extended to methods to detect and correct under erase and over erase conditions. The erase condition of a section of the memory array device is altered to form an erased section and non-erased sections. The control gates of the memory cells in the non-erased sections are forced to a normal off-state voltage sufficient to turn off erased cells. The control gates of the memory cells in non-selected subsections of the erased section are forced to a guaranteed off-state voltage that will turn off erased cells including those that are over erased. The control gates of the memory cells in a selected subsection of the erased section are forced to a check voltage. Thereafter, the bitline current of the selected subsection of the erased section is measured to determine erase condition of the selected subsection of the erase section.
    • 实现了对存储器阵列器件中的存储器单元的擦除条件进行测试的方法。 该方法进一步扩展到在擦除和擦除条件下检测和校正的方法。 存储器阵列器件的一部分的擦除条件被改变以形成擦除部分和非擦除部分。 未擦除部分中的存储器单元的控制栅极被迫到足以关闭已擦除单元的正常截止状态电压。 被擦除部分的未选择子部分中的存储器单元的控制栅极被强制为保证的关断状态电压,其将关闭包括那些被擦除的单元的擦除的单元。 被擦除部分的选定子部分中的存储器单元的控制栅极被强制为检查电压。 此后,测量擦除部分的所选子部分的位线电流,以确定擦除部分的所选子部分的擦除条件。
    • 8. 发明申请
    • Low-power SRAM E-fuse repair methodology
    • 低功耗SRAM电熔丝维修方法
    • US20050132255A1
    • 2005-06-16
    • US10723377
    • 2003-11-26
    • Tam TranGeorge Jamison
    • Tam TranGeorge Jamison
    • G06F12/16G06F11/00G06F11/14G11C29/00
    • G11C29/802
    • A low power E-fuse repair methodology substantially removes system latency during memory and/or E-fuse farm module power-down in a device that employs E-fuse farm technology. The method maintains power to the repair registers and minimal control logic in the memories, while all other circuitry can be either placed in a low power data retention mode, or completely powered off. There is no need to rescan the repair data from the E-fuse farm after one or more memories are powered back up. This provides dynamic power savings since there is no longer any need to idle the system to reload repair data. Since the E-fuse farm can be powered down after initial system power-up and repair data is loaded into the memories, there is also a significant leakage power savings.
    • 在采用电熔丝农场技术的设备中,低功率电熔丝修复方法可显着消除存储器和/或E-fuse农场模块断电期间的系统延迟。 该方法维持修复寄存器的电源和存储器中的最小控制逻辑,而所有其他电路可以放置在低功率数据保持模式或完全断电。 一个或多个存储器上电后,不需要重新扫描电源保险丝座的修复数据。 这样可以节省动力,因为不再需要空闲系统来重新加载修复数据。 由于电源熔断器场在初始系统上电后可以关闭电源,并将数据修复到存储器中,所以还可以节省大量的泄漏功率。