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1. 发明授权

US07397048B2 Technique for boron implantation 有权
标题翻译：硼植入技术
公开(公告)号：US07397048B2
公开(公告)日：2008-07-08
申请号：US11227079
申请日：2005-09-16
申请人： Vikram Singh , Edmund J. Winder , Harold M. Persing , Timothy Jerome Miller , Ziwei Fang , Atul Gupta
发明人： Vikram Singh , Edmund J. Winder , Harold M. Persing , Timothy Jerome Miller , Ziwei Fang , Atul Gupta
IPC分类号： H05H1/42
CPC分类号： H01L21/2236 , H01J37/32082 , H01J37/32412 , H01L21/26513
摘要： A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber. The apparatus may further comprise a power supply that is configured to energize the pentaborane in the reaction chamber sufficiently to produce a plasma discharge having boron-bearing ions.
摘要翻译：公开了硼注入技术。在一个特定的示例性实施例中，该技术可以由用于硼注入的装置来实现。该装置可以包括反应室。该装置还可以包含耦合到反应室的五硼烷的源，其中源能够将基本上纯的形式的五硼烷供应到反应室中。该装置还可以包括电源，其被配置为充分激发反应室中的五硼烷以产生具有含硼离子的等离子体放电。

2. 发明申请

US20090104719A1 Plasma Doping System with In-Situ Chamber Condition Monitoring 审中-公开
标题翻译：等离子体掺杂系统与原位室状态监测
公开(公告)号：US20090104719A1
公开(公告)日：2009-04-23
申请号：US11877312
申请日：2007-10-23
申请人： Atul Gupta , Timothy Miller , Harold M. Persing , Daniel Distaso , Vikram Singh
发明人： Atul Gupta , Timothy Miller , Harold M. Persing , Daniel Distaso , Vikram Singh
IPC分类号： H01L21/66
CPC分类号： H01L22/20 , H01L22/12
摘要： A method of in-situ monitoring of a plasma doping process includes generating a plasma comprising dopant ions in a chamber proximate to a platen supporting a substrate. A platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A dose of ions attracted to the substrate is measured. At least one sensor measurement is performed to determine the condition of the plasma chamber. In addition, at least one plasma process parameter is modified in response to the measured dose and in response to the at least one sensor measurement.
摘要翻译：等离子体掺杂过程的原位监测方法包括在靠近支撑衬底的压板的腔室中产生包含掺杂剂离子的等离子体。压板被具有负电位的偏压电压波形偏置，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。测量吸附到基底的一定剂量的离子。执行至少一个传感器测量以确定等离子体室的状态。此外，至少一个等离子体处理参数响应于测量的剂量并且响应于至少一个传感器测量而被修改。

3. 发明申请

US20090104761A1 Plasma Doping System With Charge Control 审中-公开
标题翻译：带充电控制的等离子体掺杂系统
公开(公告)号：US20090104761A1
公开(公告)日：2009-04-23
申请号：US11875062
申请日：2007-10-19
申请人： Yongbae Jeon , Vikram Singh , Timothy Miller , Ziwei Fang , Steven Walther , Atul Gupta
发明人： Yongbae Jeon , Vikram Singh , Timothy Miller , Ziwei Fang , Steven Walther , Atul Gupta
IPC分类号： H01L21/26 , C23C16/513
CPC分类号： H01J37/32642 , H01J37/32412 , H01J37/32935
摘要： A method of plasma doping includes generating a plasma comprising dopant ions proximate to a platen supporting a substrate in a plasma chamber. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. At least one sensor measuring data related to charging conditions favorable for forming an electrical discharge is monitored. At least one plasma process parameter is modified in response to the measured data, thereby reducing a probability of forming an electrical discharge.
摘要翻译：等离子体掺杂的方法包括产生等离子体，该等离子体包括邻近于在等离子体室中支撑衬底的压板的掺杂剂离子。压板被具有负电位的偏压电压波形偏置，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。监测至少一个测量与有利于形成放电的充电条件有关的数据的传感器。响应于测量数据修改至少一个等离子体处理参数，从而降低形成放电的可能性。

4. 发明申请

US20060063360A1 Technique for boron implantation 有权
标题翻译：硼植入技术
公开(公告)号：US20060063360A1
公开(公告)日：2006-03-23
申请号：US11227079
申请日：2005-09-16
申请人： Vikram Singh , Edmund Winder , Harold Persing , Timothy Miller , Ziwei Fang , Atul Gupta
发明人： Vikram Singh , Edmund Winder , Harold Persing , Timothy Miller , Ziwei Fang , Atul Gupta
IPC分类号： H01L21/04
CPC分类号： H01L21/2236 , H01J37/32082 , H01J37/32412 , H01L21/26513
摘要： A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber. The apparatus may further comprise a power supply that is configured to energize the pentaborane in the reaction chamber sufficiently to produce a plasma discharge having boron-bearing ions.
摘要翻译：公开了硼注入技术。在一个特定的示例性实施例中，该技术可以由用于硼注入的装置来实现。该装置可以包括反应室。该装置还可以包含耦合到反应室的五硼烷的源，其中源能够将基本上纯的形式的五硼烷供应到反应室中。该装置还可以包括电源，其被配置为充分激发反应室中的五硼烷以产生具有含硼离子的等离子体放电。

5. 发明申请

US20050287307A1 Etch and deposition control for plasma implantation 审中-公开
标题翻译：用于等离子体植入的蚀刻和沉积控制
公开(公告)号：US20050287307A1
公开(公告)日：2005-12-29
申请号：US10874944
申请日：2004-06-23
申请人： Vikram Singh , Harold Persing , Timothy Miller , Atul Gupta , Ziwei Fang
发明人： Vikram Singh , Harold Persing , Timothy Miller , Atul Gupta , Ziwei Fang
IPC分类号： C03C15/00 , C23C14/00 , H01L21/223
CPC分类号： H01L21/2236 , H01J37/32412
摘要： A method for ion implantation of a substrate includes forming a plasma from at least one implant material comprising at least one implant species, implanting the at least one implant species into a surface of the substrate, and directing at least one surface-modifying species at the surface to reduce a surface damage associated with the plasma. An apparatus for ion implantation is configured to implement this method.
摘要翻译：用于离子植入衬底的方法包括从至少一种植入材料形成等离子体，所述至少一种植入材料包括至少一种植入物种，将所述至少一种植入物种植入所述基质的表面，以及将所述至少一种表面改性物质表面以减少与等离子体相关的表面损伤。用于离子注入的装置被配置为实现该方法。

6. 发明申请

US20070084564A1 CONFORMAL DOPING APPARATUS AND METHOD 审中-公开
标题翻译：一致的装置和方法
公开(公告)号：US20070084564A1
公开(公告)日：2007-04-19
申请号：US11163303
申请日：2005-10-13
申请人： Atul Gupta , Edmund Winder , Vikram Singh , Harold Persing
发明人： Atul Gupta , Edmund Winder , Vikram Singh , Harold Persing
IPC分类号： C23F1/00
CPC分类号： H01J37/321 , H01J37/32412 , H01L21/26513 , H01L21/26526 , H01L21/2658 , H01L21/26586 , H01L29/66803
摘要： A doping apparatus includes a chamber and a plasma source. The plasma source generates dopant ions from a feed gas and provides the dopant ions to the chamber. A platen is positioned in the chamber proximate to the plasma source. The platen supports a substrate having planar and nonplanar features. At least one of a pressure proximate to the substrate, a flow rate of the feed gas, a power of the plasma, and a voltage applied to the platen is chosen so that dopant ions are implanted into both the planar and non-planar nonplanar features surfaces of the substrate.
摘要翻译：掺杂装置包括腔室和等离子体源。等离子体源从进料气体产生掺杂剂离子，并将掺杂剂离子提供给室。压板位于室中，靠近等离子体源。压板支撑具有平面和非平面特征的衬底。选择靠近衬底的压力，进料气体的流速，等离子体的功率和施加到压板的电压中的至少一个，使得掺杂剂离子注入平面和非平面非平面特征基板的表面。

7. 发明申请

US20050260354A1 In-situ process chamber preparation methods for plasma ion implantation systems 审中-公开
标题翻译：等离子体离子注入系统的原位处理室制备方法
公开(公告)号：US20050260354A1
公开(公告)日：2005-11-24
申请号：US10850222
申请日：2004-05-20
申请人： Vikram Singh , Atul Gupta , Harold Persing , Steven Walther , Anne Testoni
发明人： Vikram Singh , Atul Gupta , Harold Persing , Steven Walther , Anne Testoni
IPC分类号： H01J37/32 , C23C14/00 , C23C16/00
CPC分类号： H01J37/32495 , H01J37/32412
摘要： A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system including a process chamber, a source for producing a plasma in the process chamber, a platen for holding the substrate in the process chamber, and a voltage source for accelerating ions from the plasma into the substrate, depositing on interior surfaces of the process chamber a fresh coating that is similar in composition to a deposited film that results from plasma ion implantation of the substrate, before depositing the fresh coating, cleaning interior surfaces of the process chamber by removing an old film using one or more activated cleaning precursors, plasma ion implantation of the substrate according to a plasma ion implantation process, and repeating the steps of cleaning interior surfaces of the process chamber and depositing a fresh coating following plasma ion implantation of one or more substrates.
摘要翻译：用于等离子体离子注入衬底的方法包括提供等离子体离子注入系统，其包括处理室，用于在处理室中产生等离子体的源，用于将衬底保持在处理室中的压板和用于加速离子的电压源从等离子体进入衬底，在沉积新鲜涂层之前，在沉积新鲜涂层之前，在处理室的内表面上沉积与组合物中与等离子体离子注入导致的沉积膜相似的新涂层，清洁处理室的内表面通过使用一种或多种激活的清洁前体去除旧膜，根据等离子体离子注入工艺等离子体离子注入基板，并重复清洁处理室的内表面并在等离子体离子注入之后沉积新涂层的步骤或更多的基材。

8. 发明申请

US20100048018A1 Doped Layers for Reducing Electromigration 审中-公开
标题翻译：用于减少电迁移的掺杂层
公开(公告)号：US20100048018A1
公开(公告)日：2010-02-25
申请号：US12198083
申请日：2008-08-25
申请人： Atul Gupta , Heyun Yin , Vikram Singh
发明人： Atul Gupta , Heyun Yin , Vikram Singh
IPC分类号： H01L21/768
CPC分类号： H01L21/76834 , H01L21/76822 , H01L21/76825 , H01L21/76826 , H01L21/76832 , H01L21/76883 , H01L21/76886
摘要： A method of fabricating metal interconnects with reduced electromigration includes depositing metal interconnects on a substrate comprising electronic devices. A layer is deposited on the metal interconnects. The layer is doped with at least one dopant having a dopant concentration that increases an electromigration resistance of the metal atoms.
摘要翻译：制造具有减少的电迁移的金属互连的方法包括在包括电子器件的衬底上沉积金属互连。一层沉积在金属互连上。该层掺杂有至少一种具有增加金属原子的电迁移阻力的掺杂剂浓度的掺杂剂。

9. 发明申请

US20070087574A1 CONFORMAL DOPING APPARATUS AND METHOD 有权
标题翻译：一致的装置和方法
公开(公告)号：US20070087574A1
公开(公告)日：2007-04-19
申请号：US11163307
申请日：2005-10-13
申请人： Atul Gupta , Vikram Singh , Timothy Miller , Edmund Winder
发明人： Atul Gupta , Vikram Singh , Timothy Miller , Edmund Winder
IPC分类号： H01L21/31 , H01L21/469 , B05C11/00
CPC分类号： H01J37/32623 , H01J37/32412 , H01J37/32697 , H01L21/2236 , H01L21/26506 , H01L21/26526 , H01L21/26586 , H01L29/66803
摘要： A method of doping includes depositing a layer of dopant material on nonplanar and planar features of a substrate. Inert ions are generated from an inert feed gas. The inert ions are extracted towards the substrate where they physically knock the dopant material into both the planar and nonplanar features of the substrate.
摘要翻译：掺杂的方法包括在衬底的非平面和平面特征上沉积掺杂剂材料层。惰性进料气体产生惰性离子。向衬底提取惰性离子，在衬底上物理地将掺杂剂材料敲入衬底的平面和非平面特征。

10. 发明申请

US20110124186A1 APPARATUS AND METHOD FOR CONTROLLABLY IMPLANTING WORKPIECES 有权
标题翻译：用于控制工件的装置和方法
公开(公告)号：US20110124186A1
公开(公告)日：2011-05-26
申请号：US12947078
申请日：2010-11-16
申请人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Frank Sinclair , Deepak A. Ramappa , Russell Low , Atul Gupta , Kevin M. Daniels
发明人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Frank Sinclair , Deepak A. Ramappa , Russell Low , Atul Gupta , Kevin M. Daniels
IPC分类号： H01L21/265 , G21K5/10
CPC分类号： B01J19/081 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/0453 , H01J2237/1205 , H01L21/2236 , H01L31/022425 , H01L31/068 , H01L31/08 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.
摘要翻译：等离子体处理装置包括等离子体源，其被配置为在等离子体室中产生等离子体，使得等离子体包含用于注入工件的离子。该装置还包括聚焦板装置，该聚焦板装置具有孔结构，其被配置为修改离开聚焦板附近的等离子体鞘的等离子体鞘的形状，使得离开孔结构的孔的离子限定聚焦离子。该设备还包括处理室，其包含与聚焦板间隔开的工件，使得在工件处的聚焦离子的固定注入区域基本上比孔更窄。该装置被配置为通过在离子注入期间扫描工件来在工件中产生多个图案化区域。

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