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1. 发明申请

US20070087574A1 CONFORMAL DOPING APPARATUS AND METHOD 有权
标题翻译：一致的装置和方法
公开(公告)号：US20070087574A1
公开(公告)日：2007-04-19
申请号：US11163307
申请日：2005-10-13
申请人： Atul Gupta , Vikram Singh , Timothy Miller , Edmund Winder
发明人： Atul Gupta , Vikram Singh , Timothy Miller , Edmund Winder
IPC分类号： H01L21/31 , H01L21/469 , B05C11/00
CPC分类号： H01J37/32623 , H01J37/32412 , H01J37/32697 , H01L21/2236 , H01L21/26506 , H01L21/26526 , H01L21/26586 , H01L29/66803
摘要： A method of doping includes depositing a layer of dopant material on nonplanar and planar features of a substrate. Inert ions are generated from an inert feed gas. The inert ions are extracted towards the substrate where they physically knock the dopant material into both the planar and nonplanar features of the substrate.
摘要翻译：掺杂的方法包括在衬底的非平面和平面特征上沉积掺杂剂材料层。惰性进料气体产生惰性离子。向衬底提取惰性离子，在衬底上物理地将掺杂剂材料敲入衬底的平面和非平面特征。

2. 发明申请

US20060063360A1 Technique for boron implantation 有权
标题翻译：硼植入技术
公开(公告)号：US20060063360A1
公开(公告)日：2006-03-23
申请号：US11227079
申请日：2005-09-16
申请人： Vikram Singh , Edmund Winder , Harold Persing , Timothy Miller , Ziwei Fang , Atul Gupta
发明人： Vikram Singh , Edmund Winder , Harold Persing , Timothy Miller , Ziwei Fang , Atul Gupta
IPC分类号： H01L21/04
CPC分类号： H01L21/2236 , H01J37/32082 , H01J37/32412 , H01L21/26513
摘要： A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber. The apparatus may further comprise a power supply that is configured to energize the pentaborane in the reaction chamber sufficiently to produce a plasma discharge having boron-bearing ions.
摘要翻译：公开了硼注入技术。在一个特定的示例性实施例中，该技术可以由用于硼注入的装置来实现。该装置可以包括反应室。该装置还可以包含耦合到反应室的五硼烷的源，其中源能够将基本上纯的形式的五硼烷供应到反应室中。该装置还可以包括电源，其被配置为充分激发反应室中的五硼烷以产生具有含硼离子的等离子体放电。

3. 发明申请

US20070084564A1 CONFORMAL DOPING APPARATUS AND METHOD 审中-公开
标题翻译：一致的装置和方法
公开(公告)号：US20070084564A1
公开(公告)日：2007-04-19
申请号：US11163303
申请日：2005-10-13
申请人： Atul Gupta , Edmund Winder , Vikram Singh , Harold Persing
发明人： Atul Gupta , Edmund Winder , Vikram Singh , Harold Persing
IPC分类号： C23F1/00
CPC分类号： H01J37/321 , H01J37/32412 , H01L21/26513 , H01L21/26526 , H01L21/2658 , H01L21/26586 , H01L29/66803
摘要： A doping apparatus includes a chamber and a plasma source. The plasma source generates dopant ions from a feed gas and provides the dopant ions to the chamber. A platen is positioned in the chamber proximate to the plasma source. The platen supports a substrate having planar and nonplanar features. At least one of a pressure proximate to the substrate, a flow rate of the feed gas, a power of the plasma, and a voltage applied to the platen is chosen so that dopant ions are implanted into both the planar and non-planar nonplanar features surfaces of the substrate.
摘要翻译：掺杂装置包括腔室和等离子体源。等离子体源从进料气体产生掺杂剂离子，并将掺杂剂离子提供给室。压板位于室中，靠近等离子体源。压板支撑具有平面和非平面特征的衬底。选择靠近衬底的压力，进料气体的流速，等离子体的功率和施加到压板的电压中的至少一个，使得掺杂剂离子注入平面和非平面非平面特征基板的表面。

4. 发明申请

US20050205211A1 Plasma immersion ion implantion apparatus and method 审中-公开
标题翻译：等离子体浸没离子注入装置及方法
公开(公告)号：US20050205211A1
公开(公告)日：2005-09-22
申请号：US10805966
申请日：2004-03-22
申请人： Vikram Singh , Timothy Miller , Paul Murphy , Harold Persing , Jay Scheuer , Donna Smatlak , Edmund Winder , Robert Bettencourt
发明人： Vikram Singh , Timothy Miller , Paul Murphy , Harold Persing , Jay Scheuer , Donna Smatlak , Edmund Winder , Robert Bettencourt
IPC分类号： H01J37/32 , C23F1/00
CPC分类号： H01J37/32412
摘要： A plasma immersion ion implant apparatus and method, and a plasma chamber, each configured to provide a uniform ion flux and to dissipate the effects of secondary electrons are disclosed. The invention includes a plasma chamber including a dielectric tophat configuration and a conductive top section that may be liquid cooled. In addition, the invention provides a radio frequency (RF) antenna configuration including an active antenna that is coupled to an RF source and a parasitic antenna that is not directly coupled to any RF source, but may be grounded. The RF antenna allows for tuning of the RF coupling.
摘要翻译：公开了一种等离子体浸没离子注入装置和方法以及等离子体室，每个等离子体室被配置成提供均匀的离子通量并消散二次电子的作用。本发明包括一个等离子体室，该等离子体室包括一个电介质构造和一个可以被液体冷却的导电顶部。此外，本发明提供了一种射频（RF）天线配置，其包括耦合到RF源的有源天线和不直接耦合到任何RF源但可以接地的寄生天线。 RF天线允许调谐RF耦合。

5. 发明申请

US20090104719A1 Plasma Doping System with In-Situ Chamber Condition Monitoring 审中-公开
标题翻译：等离子体掺杂系统与原位室状态监测
公开(公告)号：US20090104719A1
公开(公告)日：2009-04-23
申请号：US11877312
申请日：2007-10-23
申请人： Atul Gupta , Timothy Miller , Harold M. Persing , Daniel Distaso , Vikram Singh
发明人： Atul Gupta , Timothy Miller , Harold M. Persing , Daniel Distaso , Vikram Singh
IPC分类号： H01L21/66
CPC分类号： H01L22/20 , H01L22/12
摘要： A method of in-situ monitoring of a plasma doping process includes generating a plasma comprising dopant ions in a chamber proximate to a platen supporting a substrate. A platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A dose of ions attracted to the substrate is measured. At least one sensor measurement is performed to determine the condition of the plasma chamber. In addition, at least one plasma process parameter is modified in response to the measured dose and in response to the at least one sensor measurement.
摘要翻译：等离子体掺杂过程的原位监测方法包括在靠近支撑衬底的压板的腔室中产生包含掺杂剂离子的等离子体。压板被具有负电位的偏压电压波形偏置，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。测量吸附到基底的一定剂量的离子。执行至少一个传感器测量以确定等离子体室的状态。此外，至少一个等离子体处理参数响应于测量的剂量并且响应于至少一个传感器测量而被修改。

6. 发明申请

US20050287307A1 Etch and deposition control for plasma implantation 审中-公开
标题翻译：用于等离子体植入的蚀刻和沉积控制
公开(公告)号：US20050287307A1
公开(公告)日：2005-12-29
申请号：US10874944
申请日：2004-06-23
申请人： Vikram Singh , Harold Persing , Timothy Miller , Atul Gupta , Ziwei Fang
发明人： Vikram Singh , Harold Persing , Timothy Miller , Atul Gupta , Ziwei Fang
IPC分类号： C03C15/00 , C23C14/00 , H01L21/223
CPC分类号： H01L21/2236 , H01J37/32412
摘要： A method for ion implantation of a substrate includes forming a plasma from at least one implant material comprising at least one implant species, implanting the at least one implant species into a surface of the substrate, and directing at least one surface-modifying species at the surface to reduce a surface damage associated with the plasma. An apparatus for ion implantation is configured to implement this method.
摘要翻译：用于离子植入衬底的方法包括从至少一种植入材料形成等离子体，所述至少一种植入材料包括至少一种植入物种，将所述至少一种植入物种植入所述基质的表面，以及将所述至少一种表面改性物质表面以减少与等离子体相关的表面损伤。用于离子注入的装置被配置为实现该方法。

7. 发明申请

US20090104761A1 Plasma Doping System With Charge Control 审中-公开
标题翻译：带充电控制的等离子体掺杂系统
公开(公告)号：US20090104761A1
公开(公告)日：2009-04-23
申请号：US11875062
申请日：2007-10-19
申请人： Yongbae Jeon , Vikram Singh , Timothy Miller , Ziwei Fang , Steven Walther , Atul Gupta
发明人： Yongbae Jeon , Vikram Singh , Timothy Miller , Ziwei Fang , Steven Walther , Atul Gupta
IPC分类号： H01L21/26 , C23C16/513
CPC分类号： H01J37/32642 , H01J37/32412 , H01J37/32935
摘要： A method of plasma doping includes generating a plasma comprising dopant ions proximate to a platen supporting a substrate in a plasma chamber. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. At least one sensor measuring data related to charging conditions favorable for forming an electrical discharge is monitored. At least one plasma process parameter is modified in response to the measured data, thereby reducing a probability of forming an electrical discharge.
摘要翻译：等离子体掺杂的方法包括产生等离子体，该等离子体包括邻近于在等离子体室中支撑衬底的压板的掺杂剂离子。压板被具有负电位的偏压电压波形偏置，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。监测至少一个测量与有利于形成放电的充电条件有关的数据的传感器。响应于测量数据修改至少一个等离子体处理参数，从而降低形成放电的可能性。

8. 发明授权

US07524743B2 Conformal doping apparatus and method 有权
标题翻译：保形掺杂装置及方法
公开(公告)号：US07524743B2
公开(公告)日：2009-04-28
申请号：US11163307
申请日：2005-10-13
申请人： Atul Gupta , Vikram Singh , Timothy Miller , Edmund Jacques Winder
发明人： Atul Gupta , Vikram Singh , Timothy Miller , Edmund Jacques Winder
IPC分类号： H01L21/423 , H01L21/425
CPC分类号： H01J37/32623 , H01J37/32412 , H01J37/32697 , H01L21/2236 , H01L21/26506 , H01L21/26526 , H01L21/26586 , H01L29/66803
摘要： A method of doping includes depositing a layer of dopant material on nonplanar and planar features of a substrate. Inert ions are generated from an inert feed gas. The inert ions are extracted towards the substrate where they physically knock the dopant material into both the planar and nonplanar features of the substrate.
摘要翻译：掺杂的方法包括在衬底的非平面和平面特征上沉积掺杂剂材料层。惰性进料气体产生惰性离子。向衬底提取惰性离子，在衬底上物理地将掺杂剂材料敲入衬底的平面和非平面特征。

9. 发明申请

US20070224840A1 Method of Plasma Processing with In-Situ Monitoring and Process Parameter Tuning 审中-公开
标题翻译：等离子体处理方法采用现场监测和工艺参数调整
公开(公告)号：US20070224840A1
公开(公告)日：2007-09-27
申请号：US11687822
申请日：2007-03-19
申请人： Anthony Renau , Vikram Singh , Atul Gupta , Timothy Miller , Edwin Arevalo , George Papasouliotis , Yong Bae Jeon
发明人： Anthony Renau , Vikram Singh , Atul Gupta , Timothy Miller , Edwin Arevalo , George Papasouliotis , Yong Bae Jeon
IPC分类号： H01L21/00 , H01L21/336 , H01L21/22 , H01L21/38
CPC分类号： H01J37/32935 , H01J37/32412 , H01J37/3299 , H01L22/20
摘要： A method of selecting plasma doping process parameters includes determining a recipe parameter database for achieving at least one plasma doping condition. The initial recipe parameters are determined from the recipe parameter database. In-situ measurements of at least one plasma doping condition are performed. The in-situ measurements of the at least one plasma doping condition are correlated to at least one plasma doping result. At least one recipe parameter is changed in response to the correlation so as to improve at least one plasma doping process performance metric.
摘要翻译：选择等离子体掺杂工艺参数的方法包括确定用于实现至少一种等离子体掺杂条件的配方参数数据库。从配方参数数据库确定初始配方参数。进行至少一个等离子体掺杂条件的原位测量。至少一种等离子体掺杂条件的原位测量与至少一种等离子体掺杂结果相关。响应于相关性改变至少一个配方参数，以便改进至少一个等离子体掺杂工艺性能度量。

10. 发明申请

US20070065576A1 Technique for atomic layer deposition 审中-公开
标题翻译：原子层沉积技术
公开(公告)号：US20070065576A1
公开(公告)日：2007-03-22
申请号：US11221710
申请日：2005-09-09
申请人： Vikram Singh , Harold Persing , Edmund Winder , Jeffrey Hopwood , Anthony Renau
发明人： Vikram Singh , Harold Persing , Edmund Winder , Jeffrey Hopwood , Anthony Renau
IPC分类号： C23C16/00
CPC分类号： C23C16/45546 , C23C16/452 , C23C16/4554 , C23C16/45544
摘要： A technique for atomic layer deposition is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for atomic layer deposition. The apparatus may comprise a process chamber having a substrate platform to hold at least one substrate. The apparatus may also comprise a supply of a precursor substance, wherein the precursor substance comprises atoms of at least one first species and atoms of at least one second species, and wherein the supply provides the precursor substance to saturate a surface of the at least one substrate. The apparatus may further comprise a plasma source of metastable atoms of at least one third species, wherein the metabstable atoms are capable of desorbing the atoms of the at least one second species from the saturated surface of the at least one substrate to form one or more atomic layers of the at least one first species.
摘要翻译：公开了一种用于原子层沉积的技术。在一个特定的示例性实施例中，该技术可以通过用于原子层沉积的装置来实现。该装置可以包括具有用于保持至少一个基板的基板平台的处理室。该装置还可以包括前体物质的供应，其中所述前体物质包含至少一种第一种类的原子和至少一种第二物质的原子，并且其中所述供应提供所述前体物质以饱和所述至少一种基质。该装置可以进一步包含至少一种第三种类的亚稳态原子的等离子体源，其中可重构原子能够从至少一种底物的饱和表面解吸所述至少一种第二种类的原子以形成一种或多种所述至少一种第一种类的原子层。

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