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1. 发明申请

US20070084564A1 CONFORMAL DOPING APPARATUS AND METHOD 审中-公开
标题翻译：一致的装置和方法
公开(公告)号：US20070084564A1
公开(公告)日：2007-04-19
申请号：US11163303
申请日：2005-10-13
申请人： Atul Gupta , Edmund Winder , Vikram Singh , Harold Persing
发明人： Atul Gupta , Edmund Winder , Vikram Singh , Harold Persing
IPC分类号： C23F1/00
CPC分类号： H01J37/321 , H01J37/32412 , H01L21/26513 , H01L21/26526 , H01L21/2658 , H01L21/26586 , H01L29/66803
摘要： A doping apparatus includes a chamber and a plasma source. The plasma source generates dopant ions from a feed gas and provides the dopant ions to the chamber. A platen is positioned in the chamber proximate to the plasma source. The platen supports a substrate having planar and nonplanar features. At least one of a pressure proximate to the substrate, a flow rate of the feed gas, a power of the plasma, and a voltage applied to the platen is chosen so that dopant ions are implanted into both the planar and non-planar nonplanar features surfaces of the substrate.
摘要翻译：掺杂装置包括腔室和等离子体源。等离子体源从进料气体产生掺杂剂离子，并将掺杂剂离子提供给室。压板位于室中，靠近等离子体源。压板支撑具有平面和非平面特征的衬底。选择靠近衬底的压力，进料气体的流速，等离子体的功率和施加到压板的电压中的至少一个，使得掺杂剂离子注入平面和非平面非平面特征基板的表面。

2. 发明申请

US20060063360A1 Technique for boron implantation 有权
标题翻译：硼植入技术
公开(公告)号：US20060063360A1
公开(公告)日：2006-03-23
申请号：US11227079
申请日：2005-09-16
申请人： Vikram Singh , Edmund Winder , Harold Persing , Timothy Miller , Ziwei Fang , Atul Gupta
发明人： Vikram Singh , Edmund Winder , Harold Persing , Timothy Miller , Ziwei Fang , Atul Gupta
IPC分类号： H01L21/04
CPC分类号： H01L21/2236 , H01J37/32082 , H01J37/32412 , H01L21/26513
摘要： A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber. The apparatus may further comprise a power supply that is configured to energize the pentaborane in the reaction chamber sufficiently to produce a plasma discharge having boron-bearing ions.
摘要翻译：公开了硼注入技术。在一个特定的示例性实施例中，该技术可以由用于硼注入的装置来实现。该装置可以包括反应室。该装置还可以包含耦合到反应室的五硼烷的源，其中源能够将基本上纯的形式的五硼烷供应到反应室中。该装置还可以包括电源，其被配置为充分激发反应室中的五硼烷以产生具有含硼离子的等离子体放电。

3. 发明申请

US20070065576A1 Technique for atomic layer deposition 审中-公开
标题翻译：原子层沉积技术
公开(公告)号：US20070065576A1
公开(公告)日：2007-03-22
申请号：US11221710
申请日：2005-09-09
申请人： Vikram Singh , Harold Persing , Edmund Winder , Jeffrey Hopwood , Anthony Renau
发明人： Vikram Singh , Harold Persing , Edmund Winder , Jeffrey Hopwood , Anthony Renau
IPC分类号： C23C16/00
CPC分类号： C23C16/45546 , C23C16/452 , C23C16/4554 , C23C16/45544
摘要： A technique for atomic layer deposition is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for atomic layer deposition. The apparatus may comprise a process chamber having a substrate platform to hold at least one substrate. The apparatus may also comprise a supply of a precursor substance, wherein the precursor substance comprises atoms of at least one first species and atoms of at least one second species, and wherein the supply provides the precursor substance to saturate a surface of the at least one substrate. The apparatus may further comprise a plasma source of metastable atoms of at least one third species, wherein the metabstable atoms are capable of desorbing the atoms of the at least one second species from the saturated surface of the at least one substrate to form one or more atomic layers of the at least one first species.
摘要翻译：公开了一种用于原子层沉积的技术。在一个特定的示例性实施例中，该技术可以通过用于原子层沉积的装置来实现。该装置可以包括具有用于保持至少一个基板的基板平台的处理室。该装置还可以包括前体物质的供应，其中所述前体物质包含至少一种第一种类的原子和至少一种第二物质的原子，并且其中所述供应提供所述前体物质以饱和所述至少一种基质。该装置可以进一步包含至少一种第三种类的亚稳态原子的等离子体源，其中可重构原子能够从至少一种底物的饱和表面解吸所述至少一种第二种类的原子以形成一种或多种所述至少一种第一种类的原子层。

4. 发明申请

US20050205211A1 Plasma immersion ion implantion apparatus and method 审中-公开
标题翻译：等离子体浸没离子注入装置及方法
公开(公告)号：US20050205211A1
公开(公告)日：2005-09-22
申请号：US10805966
申请日：2004-03-22
申请人： Vikram Singh , Timothy Miller , Paul Murphy , Harold Persing , Jay Scheuer , Donna Smatlak , Edmund Winder , Robert Bettencourt
发明人： Vikram Singh , Timothy Miller , Paul Murphy , Harold Persing , Jay Scheuer , Donna Smatlak , Edmund Winder , Robert Bettencourt
IPC分类号： H01J37/32 , C23F1/00
CPC分类号： H01J37/32412
摘要： A plasma immersion ion implant apparatus and method, and a plasma chamber, each configured to provide a uniform ion flux and to dissipate the effects of secondary electrons are disclosed. The invention includes a plasma chamber including a dielectric tophat configuration and a conductive top section that may be liquid cooled. In addition, the invention provides a radio frequency (RF) antenna configuration including an active antenna that is coupled to an RF source and a parasitic antenna that is not directly coupled to any RF source, but may be grounded. The RF antenna allows for tuning of the RF coupling.
摘要翻译：公开了一种等离子体浸没离子注入装置和方法以及等离子体室，每个等离子体室被配置成提供均匀的离子通量并消散二次电子的作用。本发明包括一个等离子体室，该等离子体室包括一个电介质构造和一个可以被液体冷却的导电顶部。此外，本发明提供了一种射频（RF）天线配置，其包括耦合到RF源的有源天线和不直接耦合到任何RF源但可以接地的寄生天线。 RF天线允许调谐RF耦合。

5. 发明申请

US20070087581A1 TECHNIQUE FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：原子层沉积技术
公开(公告)号：US20070087581A1
公开(公告)日：2007-04-19
申请号：US11608522
申请日：2006-12-08
申请人： Vikram SINGH , Harold Persing , Edmund Winder , Anthony Renau , George Papasouliotis
发明人： Vikram SINGH , Harold Persing , Edmund Winder , Anthony Renau , George Papasouliotis
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/0228 , C23C16/22 , C23C16/345 , C23C16/452 , C23C16/4554 , H01L21/0217 , H01L21/02274 , H01L21/3141 , H01L21/3185 , H01L21/32155
摘要： A technique for atomic layer deposition is disclosed. In one particular exemplary embodiment, the technique may be realized by a method for forming a strained thin film. The method may comprise supplying a substrate surface with one or more precursor substances having atoms of at least one first species and atoms of at least one second species, thereby forming a layer of the precursor substance on the substrate surface. The method may also comprise exposing the substrate surface to plasma-generated metastable atoms of a third species, wherein the metastable atoms desorb the atoms of the at least one second species from the substrate surface to form an atomic layer of the at least one first species. A desired amount of stress in the atomic layer of the at least one first species may be achieved by controlling one or more parameters in the atomic layer deposition process.
摘要翻译：公开了一种用于原子层沉积的技术。在一个特定的示例性实施例中，该技术可以通过用于形成应变薄膜的方法来实现。该方法可以包括向衬底表面提供一种或多种具有至少一种第一种类的原子和至少一种第二种类的原子的前体物质，由此在衬底表面上形成前体物质层。该方法还可以包括将基底表面暴露于等离子体产生的第三种类的亚稳原子，其中亚稳原子从底物表面解吸至少一种第二种类的原子以形成至少一种第一种类的原子层。可以通过控制原子层沉积工艺中的一个或多个参数来实现至少一种第一种类的原子层中所需的应力量。

6. 发明申请

US20050287307A1 Etch and deposition control for plasma implantation 审中-公开
标题翻译：用于等离子体植入的蚀刻和沉积控制
公开(公告)号：US20050287307A1
公开(公告)日：2005-12-29
申请号：US10874944
申请日：2004-06-23
申请人： Vikram Singh , Harold Persing , Timothy Miller , Atul Gupta , Ziwei Fang
发明人： Vikram Singh , Harold Persing , Timothy Miller , Atul Gupta , Ziwei Fang
IPC分类号： C03C15/00 , C23C14/00 , H01L21/223
CPC分类号： H01L21/2236 , H01J37/32412
摘要： A method for ion implantation of a substrate includes forming a plasma from at least one implant material comprising at least one implant species, implanting the at least one implant species into a surface of the substrate, and directing at least one surface-modifying species at the surface to reduce a surface damage associated with the plasma. An apparatus for ion implantation is configured to implement this method.
摘要翻译：用于离子植入衬底的方法包括从至少一种植入材料形成等离子体，所述至少一种植入材料包括至少一种植入物种，将所述至少一种植入物种植入所述基质的表面，以及将所述至少一种表面改性物质表面以减少与等离子体相关的表面损伤。用于离子注入的装置被配置为实现该方法。

7. 发明申请

US20050260354A1 In-situ process chamber preparation methods for plasma ion implantation systems 审中-公开
标题翻译：等离子体离子注入系统的原位处理室制备方法
公开(公告)号：US20050260354A1
公开(公告)日：2005-11-24
申请号：US10850222
申请日：2004-05-20
申请人： Vikram Singh , Atul Gupta , Harold Persing , Steven Walther , Anne Testoni
发明人： Vikram Singh , Atul Gupta , Harold Persing , Steven Walther , Anne Testoni
IPC分类号： H01J37/32 , C23C14/00 , C23C16/00
CPC分类号： H01J37/32495 , H01J37/32412
摘要： A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system including a process chamber, a source for producing a plasma in the process chamber, a platen for holding the substrate in the process chamber, and a voltage source for accelerating ions from the plasma into the substrate, depositing on interior surfaces of the process chamber a fresh coating that is similar in composition to a deposited film that results from plasma ion implantation of the substrate, before depositing the fresh coating, cleaning interior surfaces of the process chamber by removing an old film using one or more activated cleaning precursors, plasma ion implantation of the substrate according to a plasma ion implantation process, and repeating the steps of cleaning interior surfaces of the process chamber and depositing a fresh coating following plasma ion implantation of one or more substrates.
摘要翻译：用于等离子体离子注入衬底的方法包括提供等离子体离子注入系统，其包括处理室，用于在处理室中产生等离子体的源，用于将衬底保持在处理室中的压板和用于加速离子的电压源从等离子体进入衬底，在沉积新鲜涂层之前，在沉积新鲜涂层之前，在处理室的内表面上沉积与组合物中与等离子体离子注入导致的沉积膜相似的新涂层，清洁处理室的内表面通过使用一种或多种激活的清洁前体去除旧膜，根据等离子体离子注入工艺等离子体离子注入基板，并重复清洁处理室的内表面并在等离子体离子注入之后沉积新涂层的步骤或更多的基材。

8. 发明申请

US20050205212A1 RF Plasma Source With Conductive Top Section 审中-公开
标题翻译：射频等离子体源与导电顶部
公开(公告)号：US20050205212A1
公开(公告)日：2005-09-22
申请号：US10905172
申请日：2004-12-20
申请人： Vikram Singh , Harold Persing , Timothy Miller
发明人： Vikram Singh , Harold Persing , Timothy Miller
IPC分类号： H01J37/32 , C23F1/00
CPC分类号： H01J37/32412
摘要： A plasma source includes a chamber that contains a process gas. The chamber has a chamber top comprising a first section formed of a dielectric material that extends in a horizontal direction. A second section of the chamber top is formed of a dielectric material that extends a height from the first section in a vertical direction. A top section of the chamber top is formed of a conductive material that extends a length across the second section in the horizontal direction. A radio frequency antenna is positioned proximate to at least one of the first section and the second section. The radio frequency antenna induces radio frequency currents into the chamber that excite and ionize the process gas so as to generate a plasma in the chamber.
摘要翻译：等离子体源包括含有工艺气体的腔室。该室具有室顶部，其包括由在水平方向上延伸的电介质材料形成的第一部分。腔室顶部的第二部分由在垂直方向上从第一部分延伸高度的电介质材料形成。腔室顶部的顶部由导电材料形成，该导电材料在水平方向上延伸穿过第二部分的长度。无线电频率天线位于第一部分和第二部分中的至少一个附近。射频天线将射频电流引入到腔室中，激发和离子化处理气体，以便在腔室中产生等离子体。

9. 发明申请

US20060289799A1 Profile adjustment in plasma ion implanter 有权
公开(公告)号：US20060289799A1
公开(公告)日：2006-12-28
申请号：US11376522
申请日：2006-03-15
申请人： Ziwei Fang , Richard Appel , Vincent Deno , Vikram Singh , Harold Persing
发明人： Ziwei Fang , Richard Appel , Vincent Deno , Vikram Singh , Harold Persing
IPC分类号： H01J37/08
CPC分类号： H01J37/32412 , H01J37/3171 , H01J37/3299 , H01J2237/31705
摘要： A method and apparatus are directed to providing a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that shallow and abrupt junctions in vertical and lateral directions are realized that are critical to device scaling in plasma doping systems.

10. 发明授权

US08877654B2 Pulsed plasma to affect conformal processing 有权
标题翻译：脉冲等离子体影响保形加工
公开(公告)号：US08877654B2
公开(公告)日：2014-11-04
申请号：US12760847
申请日：2010-04-15
申请人： Helen Maynard , Vikram Singh , Svetlana Radovanov , Harold Persing
发明人： Helen Maynard , Vikram Singh , Svetlana Radovanov , Harold Persing
IPC分类号： H01L21/31
CPC分类号： H01L21/02274 , H01L21/2236 , H01L21/3065 , H01L29/66803
摘要： A plasma processing method is provided. The plasma processing method includes using the after-glow of a pulsed power plasma to perform conformal processing. During the afterglow, the equipotential field lines follow the contour of the workpiece surface, allowing ions to be introduced in a variety of incident angles, especially to non-planar surfaces. In another aspect of the disclosure, the platen may be biased positively during the plasma afterglow to attract negative ions toward the workpiece. Various conformal processing steps, such as implantation, etching and deposition may be performed.
摘要翻译：提供等离子体处理方法。等离子体处理方法包括使用脉冲功率等离子体的余辉进行保形加工。在余辉期间，等电场线跟随工件表面的轮廓，允许以各种入射角度，特别是非平面表面引入离子。在本公开的另一方面，压片可在等离子体余辉期间被正向偏压以将负离子吸引到工件。可以执行各种适形处理步骤，例如植入，蚀刻和沉积。

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