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    • 1. 发明申请
    • MEMORY WITH BLOCK-ERASABLE LOCATIONS AND A LINKED CHAIN OF POINTERS TO LOCATE BLOCKS WITH POINTER INFORMATION
    • 具有可擦除位置的记忆体和连接的指示器链以定位具有指针信息的块
    • US20100299494A1
    • 2010-11-25
    • US12158993
    • 2006-12-13
    • Victor M.G. Van AchtNicolaas Lambert
    • Victor M.G. Van AchtNicolaas Lambert
    • G06F12/02
    • G06F12/0246
    • A memory apparatus has a main memory (10) that comprises a plurality of physical blocks of memory locations. The main memory (10), for example a flash memory, supports erasing of at least a physical block at a time. A chain of pointers (72, 75) that ultimately points to pointing information such as a logical address to physical address mapping table is stored in the main memory (10), each pointer (72, 75) being stored in a respective one of the blocks (70, 74), each non-final pointer (72) in the chain pointing to a respective block (74) that contains a next pointer in the chain. On start up of main memory (10) the pointing information is located by following said chain, using the pointers from the main memory. In normal operation direct pointers stored in a RAM are preferably used.
    • 存储装置具有主存储器(10),其包括多个存储器位置的物理块。 主存储器(10),例如闪速存储器,一次支持擦除至少一个物理块。 最终指向诸如逻辑地址到物理地址映射表的指向信息的指针链(72,75)被存储在主存储器(10)中,每个指针(72,75)存储在主存储器 块(70,74)中,链中的每个非最终指针(72)指向包含链中的下一个指针的相应块(74)。 在主存储器(10)的启动时,使用来自主存储器的指针,通过跟随所述链来定位指向信息。 在正常操作中,优选地使用存储在RAM中的直接指针。
    • 2. 发明申请
    • ELECTRONIC CIRCUIT WITH A MEMORY MATRIX THAT STORES PAGES INCLUDING EXTRA DATA
    • 具有包含额外数据的存储器的存储器矩阵的电子电路
    • US20090070637A1
    • 2009-03-12
    • US12281983
    • 2007-03-05
    • Victor M.G. Van AchtNicolaas Lambert
    • Victor M.G. Van AchtNicolaas Lambert
    • G06F11/08
    • G06F11/1068
    • An apparatus comprises a memory with a matrix (10) with rows and columns of memory cells. A read access circuit (14, 16, 18) executes a read command to read a retrieval unit comprising data from a row of the memory cells from the matrix (10) and to output data from the retrieval unit. A processing circuit (12) coupled to the read access circuit (14, 16, 18) is configured to execute an extra read operation involving issuing the read command, receiving the extra data (24), performing error detection on only the extra data (24), using an error detecting code in which the extra data is coded, conditionally performing error correction on the data from the extra data (24) using data from the retrieval unit including the payload data (22), according to an error correcting code in which the retrieval unit is coded, if the error detection indicates an error in the extra data (24). The processing circuit (12) performs further processing using the data from the extra data (22) or the corrected extra data, dependent on whether the error detection indicates an error in the extra data (22).
    • 一种装置包括具有带有存储单元的行和列的矩阵(10)的存储器。 读取访问电路(14,16,18)执行读取命令以从矩阵(10)读取包括来自存储器单元的行的数据的检索单元,并从检索单元输出数据。 耦合到读取访问电路(14,16,18)的处理电路(12)被配置为执行涉及发出读取命令的额外读取操作,接收附加数据(24),仅对附加数据执行错误检测 24),使用其中对所述额外数据进行编码的错误检测码,根据来自所述有效载荷数据(22)的检索单元的数据,使用来自所述附加数据(24)的数据对所述数据进行有条件地执行错误校正,所述纠错码 其中检索单元被编码,如果错误检测指示额外数据(24)中的错误。 处理电路(12)根据来自额外数据(22)的数据或校正的附加数据,根据该错误检测是否指示额外数据(22)中的错误,进行进一步处理。
    • 4. 发明申请
    • Non-Volatile Memory with Block Erasable Locations
    • 具有块可擦除位置的非易失性存储器
    • US20080270681A1
    • 2008-10-30
    • US12158978
    • 2006-12-13
    • Victor M.G. Van AchtNicolaas Lambert
    • Victor M.G. Van AchtNicolaas Lambert
    • G06F12/02
    • G06F12/0246
    • A main memory (10) comprises a plurality of physical blocks of memory locations. The main memory (10) supports erasing of at least a physical block at a time. Pointer information is stored in a subset (40, 42) of the blocks for use to identify respective ones of the physical blocks that are assigned to respective functions. Successive versions of the pointing information are stored at mutually different memory locations initially in a first block (40) in the subset (40, 42). A subsequent version of the pointing information that is more recent than the successive versions is stored in a second block (42) of the subset (40, 42) at least after the first block (40) has been filled. The first block (40) is erased after storing the subsequent version. On start up of the main memory the pointing information is recovered by testing which of the blocks of the subset (40, 42) contains a most recent version of the pointing information.
    • 主存储器(10)包括存储器位置的多个物理块。 主存储器(10)一次支持擦除至少一个物理块。 指针信息被存储在块的子集(40,42)中,用于标识被分配给各个功能的各个物理块。 指向信息的连续版本存储在最初在子集(40,42)中的第一块(40)中的彼此不同的存储器位置处。 至少在第一块(40)已被填充之后,比连续版本更新的指向信息的后续版本被存储在子集(40,42)的第二块(42)中。 第一块(40)在存储后续版本之后被擦除。 在主存储器的启动时,通过测试子集(40,42)中的哪个块包含指向信息的最新版本来恢复指向信息。
    • 6. 发明授权
    • Circuit with a memory array and a reference level generator circuit
    • 具有存储器阵列和参考电平发生器电路的电路
    • US08081523B2
    • 2011-12-20
    • US11813862
    • 2006-01-05
    • Victor Martinus Van AchtNicolaas LambertPierre Hermanus Woerlee
    • Victor Martinus Van AchtNicolaas LambertPierre Hermanus Woerlee
    • G11C5/14
    • G11C7/14
    • A circuit comprises an array of memory cells (10). A plurality of sensing circuits (20), are coupled to the output (14) of respective memory cells (10), for comparing the output signal of the respective one of the memory cells (10) with a reference signal to form a data signal from the output signal from the respective one of the memory cells (10). A reference generator circuit (24, 26) forms the reference signal from a sum wherein each respective one of the memory cells (10) of the addressed group contributes a contribution that is a function of the output signal of the respective one of the memory cells (10). The contributions are equalized for output signal values at more than a saturating distance above the reference signal, and the contributions are equalized for output signal values at more than the saturating distance below the reference signal. In case of storage of multi-level data in the cells the distances from the central level to the saturation levels above and below the reference level are mutually different, with a ratio that corresponds to a ratio of the counts of cells that have been programmed to respective levels.
    • 电路包括存储器单元阵列(10)。 多个感测电路(20)耦合到相应存储单元(10)的输出(14),用于将存储单元(10)中的相应一个的输出信号与参考信号进行比较以形成数据信号 来自存储单元(10)中的相应一个的输出信号。 参考发生器电路(24,26)从一个和形成参考信号,其中寻址组的每个存储单元(10)中的每个相应的一个贡献作为存储单元的相应一个的输出信号的函数 (10)。 在超过参考信号的饱和距离上的输出信号值的贡献相等,并且在超过参考信号以下的饱和距离处的输出信号值的贡献相等。 在单元格中存储多级数据的情况下,从基准电平以上和低于基准电平的中心电平到饱和电平的距离是相互不同的,其比率对应于已经被编程的单元计数的比率 各级别。
    • 8. 发明授权
    • Universal memory device having a profile storage unit
    • 具有简档存储单元的通用存储器件
    • US07831790B2
    • 2010-11-09
    • US10549367
    • 2004-03-17
    • Nicolaas LambertAdrianus Johannes Maria DenissenWilhelmus Franciscus Johannes FontijnRobert Jochemsen
    • Nicolaas LambertAdrianus Johannes Maria DenissenWilhelmus Franciscus Johannes FontijnRobert Jochemsen
    • G06F13/10
    • G06F21/78G06F21/79G06F2221/2141G11C7/1045G11C7/24G11C16/22
    • A universal memory device is presented that provides adaptability to existing hardware and software environments. The memory can “mimic” existing memory technology combining the advantages of integrating all memory capacity into one single technology and still providing the implicit protections and access characteristics known from the different existing memory technologies. The memory device comprises a memory having low-latency, rewritable, non-volatile memory cells, a profile storage unit connected with the memory and comprising access information allocated to a set of request information elements (request profile), such that the access information indicates whether an access request to said memory, the access request having the request profile, is to be allowed or rejected, and an access control unit communicating with the profile storage unit and the memory, and adapted to allow or reject an incoming access request in dependence on the access information allocated to the request profile of the access request.
    • 提出了一种提供对现有硬件和软件环境的适应性的通用存储器件。 存储器可以“模拟”现有存储器技术,结合将所有存储器容量集成到一个单一技术中并且仍然提供从不同现有存储器技术已知的隐式保护和访问特性的优点。 存储装置包括具有低等待时间,可重写,非易失性存储器单元的存储器,与存储器连接的简档存储单元,并且包括分配给一组请求信息元素(请求简档)的访问信息,使得访问信息指示 是否允许或拒绝对所述存储器的访问请求,具有请求简档的访问请求,以及与简档存储单元和存储器通信的访问控制单元,并且适于依赖于允许或拒绝传入的访问请求 关于分配给访问请求的请求简档的访问信息。
    • 10. 发明申请
    • ELECTRONIC CIRCUIT THAT COMPRISES A MEMORY MATRIX AND METHOD OF READING FOR BITLINE NOISE COMPENSATION
    • 包含记忆矩阵的电子电路和用于BITLINE噪声补偿的读取方法
    • US20100232245A1
    • 2010-09-16
    • US12293817
    • 2007-03-27
    • Victor M. G. Van AchtNicolaas Lambert
    • Victor M. G. Van AchtNicolaas Lambert
    • G11C7/02
    • G11C7/02G11C7/062G11C7/14G11C7/18
    • Data is read from a memory matrix (10) with a plurality of bit lines (12). A differential sense amplifier (14) receives a signal derived from a first one of the bit lines (12) on a first input. The differential sense amplifier (14) receives a reference signal from a reference output of a reference circuit (15) to a second input. A second one of the bit lines (12), which is adjacent to the first one of the bit lines (12), is coupled to the reference circuit (15), so that a bit line signal value on the second one of the bit lines (12) affects a reference signal value on the reference output, at least partly reproducing an effect of crosstalk of the bit line signal value (12) on the second one of the bit lines (12) on a bit line signal value on the first one of the bit lines (12).
    • 从具有多个位线(12)的存储矩阵(10)中读取数据。 差分读出放大器(14)在第一输入端接收从位线(12)中的第一位导出的信号。 差分读出放大器(14)从参考电路(15)的参考输出接收参考信号到第二输入端。 与位线(12)中的第一位相邻的位线(12)中的第二位被耦合到参考电路(15),使得位的第二位上的位线信号值 行(12)影响参考输出上的参考信号值,至少部分地再现位线信号值(12)上的位线信号值(12)对第二位线(12)上的串扰的影响 第一个位线(12)。