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1. 发明申请

US20060035419A1 Low temperature curable materials for optical applications 有权
标题翻译：用于光学应用的低温可固化材料
公开(公告)号：US20060035419A1
公开(公告)日：2006-02-16
申请号：US11192352
申请日：2005-07-29
申请人： Victor Lu , Lei Jin , Arlene Suedmeyer , Paul Apen , Peter Smith , Jinghong Chen
发明人： Victor Lu , Lei Jin , Arlene Suedmeyer , Paul Apen , Peter Smith , Jinghong Chen
IPC分类号： H01L21/84 , H01L21/31
CPC分类号： C09D183/04 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/3127 , H01L21/316 , H01L27/1292
摘要： The invention relates to low temperature curable spin-on glass materials which are useful for electronic applications, such as optical devices. A substantially crack-free and substantially void-free silicon polymer film is produced by (a) preparing a composition comprising at least one silicon containing pre-polymer, a catalyst, and optionally water; (b) coating a substrate with the composition to form a film on the substrate, (c) crosslinking the composition by heating to produce a substantially crack-free and substantially void-free silicon polymer film, having a a transparency to light in the range of about 400 nm to about 800 nm of about 95% or more.
摘要翻译：本发明涉及可用于电子应用的低温可固化旋涂玻璃材料，例如光学器件。通过（a）制备包含至少一种含硅预聚物，催化剂和任选的水的组合物来制备基本上无裂纹且基本上无空隙的硅聚合物膜; （b）用所述组合物涂覆基材以在基材上形成膜，（c）通过加热使组合物交联以产生基本上无裂纹且基本上无空隙的硅聚合物膜，其具有在约400nm至约800nm约95％或更多。

2. 发明申请

US20060027803A1 LOW TEMPERATURE CURABLE MATERIALS FOR OPTICAL APPLICATIONS 有权
标题翻译：用于光学应用的低温可固化材料
公开(公告)号：US20060027803A1
公开(公告)日：2006-02-09
申请号：US10910673
申请日：2004-08-03
申请人： Victor Lu , Lei Jin , Arlene Suedmeyer , Paul Apen
发明人： Victor Lu , Lei Jin , Arlene Suedmeyer , Paul Apen
IPC分类号： H01L29/04 , H01L21/84
CPC分类号： C09D183/04 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/3127 , H01L21/316 , H01L27/1292
摘要： The invention relates to low temperature curable spin-on glass materials which are useful for electronic applications, such as optical devices. A substantially crack-free and substantially void-free silicon polymer film is produced by (a) preparing a composition comprising at least one silicon containing pre-polymer having at least one organic group, a catalyst, and optionally water; (b) coating a substrate with the composition to form a film on the substrate, (c) crosslinking the composition by heating the composition at a temperature of about 250° C. or less for about 30 minutes or less, to produce a substantially crack-free and substantially void-free silicon polymer film, which silicon polymer has a weight ratio of organic groups to SiO groups of about 0.15:1 or more, and which silicon containing polymer film has a field breakdown voltage of about 2.5 MV/cm or more and a transparency to light in the range of about 400 nm to about 700 nm of about 95% or more.
摘要翻译：本发明涉及可用于电子应用的低温可固化旋涂玻璃材料，例如光学器件。通过（a）制备包含至少一种具有至少一个有机基团的含硅预聚物，催化剂和任选的水的组合物来制备基本上无裂纹且基本上无空隙的硅聚合物膜; （b）用该组合物涂覆基材以在基材上形成膜，（c）通过在约250℃或更低的温度下加热该组合物约30分钟或更短时间来交联该组合物，以产生基本上裂纹该硅聚合物的有机基团与SiO基的重量比为约0.15:1或更高，并且含硅聚合物膜的场击穿电压为约2.5MV / cm，或者在约400nm至约700nm的范围内的光的透明度为约95％或更高。

3. 发明申请

US20060008659A1 Materials with enhanced properties for shallow trench isolation/premetal dielectric applications 失效
标题翻译：具有增强性能的浅沟槽隔离/金属前介质应用的材料
公开(公告)号：US20060008659A1
公开(公告)日：2006-01-12
申请号：US10886247
申请日：2004-07-07
申请人： Victor Lu , Lei Jin , Arlene Suedmeyer , Denis Endisch , Paul Apen , Brian Daniels , Deling Zhou , Ananth Naman
发明人： Victor Lu , Lei Jin , Arlene Suedmeyer , Denis Endisch , Paul Apen , Brian Daniels , Deling Zhou , Ananth Naman
IPC分类号： B32B13/04
CPC分类号： H01L21/02118 , H01L21/02318 , H01L21/3105 , H01L21/316
摘要： The present invention relates to semiconductor device fabrication and more specifically to a method and material for forming high density shallow trench isolation structures in integrated circuits capable of withstanding wet etch treatments. A silica dielectric film is formed on a substrate. The silica dielectric film has a density of from about 1.0 to about 2.3 g/ml, a SiC:SiO bond ratio of about 0.015 or more, a dielectric constant of about 4.0 or less, a breakdown voltage of about 2 MV/cm or more, and a wet etch resistance in a 100:1 by volume mixture of water and hydrogen fluoride of about 30 Å/minute or less.
摘要翻译：本发明涉及半导体器件制造，更具体地涉及一种用于在能够承受湿蚀刻处理的集成电路中形成高密度浅沟槽隔离结构的方法和材料。在基板上形成石英电介质膜。二氧化硅电介质膜的密度为约1.0至约2.3g / ml，SiC：SiO键比为约0.015或更大，介电常数为约4.0或更小，击穿电压为约2MV / cm以上，并且在100:1体积比的水和氟化氢的混合物中具有约30 /分钟或更少的湿蚀刻电阻。

4. 发明申请

US20060051929A1 Electrical properties of shallow trench isolation materials via high temperature annealing in the presence of reactive gases 审中-公开
标题翻译：浅沟槽隔离材料的电性能在反应气体存在下通过高温退火
公开(公告)号：US20060051929A1
公开(公告)日：2006-03-09
申请号：US10934068
申请日：2004-09-03
申请人： Lei Jin , Victor Lu , Wenya Fan , Paul Apen
发明人： Lei Jin , Victor Lu , Wenya Fan , Paul Apen
IPC分类号： H01L21/76
CPC分类号： H01L21/02129 , H01L21/0212 , H01L21/02164 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/3121 , H01L21/316 , H01L21/76224
摘要： The present invention relates to semiconductor device fabrication and more specifically to a method and material for forming high density shallow trench isolation structures in integrated circuits having improved electrical properties. A silica dielectric film is formed on a substrate (a) preparing a composition comprising a silicon containing pre-polymer, a metal-ion-free catalyst, and optionally water; (b) coating a substrate with the composition to form a film, (c) crosslinking the composition by first heating the composition in a nitrogen atmosphere at a temperature of from about 750° C. to about 850° C. for from about 30 minutes to about 120 minutes; and thereafter heating the composition in an oxygen atmosphere at a temperature of from about 850° C. to about 1000° C. for from about 30 minutes to about 120 minutes, effective to produce a substantially crack-free, and substantially void-free silica dielectric film having a density of from about 1.8 to about 2.3 g/ml, a dielectric constant of about 4.0 or less, a breakdown voltage of about 3 MV/cm or more.
摘要翻译：本发明涉及半导体器件制造，更具体地涉及在具有改进的电性能的集成电路中形成高密度浅沟槽隔离结构的方法和材料。在基材（a）上形成二氧化硅电介质膜，制备包含含硅预聚物，不含金属离子的催化剂和任选的水的组合物; （b）用组合物涂覆基材以形成膜，（c）通过在氮气气氛中在约750℃至约850℃的温度下首先加热该组合物约30分钟来交联该组合物至约120分钟; 然后在氧气氛中在约850℃至约1000℃的温度下加热组合物约30分钟至约120分钟，有效地产生基本上无裂纹且基本上无空隙的二氧化硅绝缘膜的密度为约1.8至约2.3g / ml，介电常数为约4.0或更小，击穿电压为约3MV / cm以上。

5. 发明申请

US20060014842A1 Hybrid inorganic/organic low k dielectric films with improved mechanical strength 失效
公开(公告)号：US20060014842A1
公开(公告)日：2006-01-19
申请号：US10890981
申请日：2004-07-14
申请人： Bo Li , Victor Lu , Paul Apen , Roger Leung
发明人： Bo Li , Victor Lu , Paul Apen , Roger Leung
IPC分类号： C08J9/26
CPC分类号： C08J9/26 , C04B38/0022 , C04B2111/00482 , C04B2111/92 , C08J2201/0422 , C08J2201/046 , C08J2383/04 , G03F7/0757 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , C04B35/14 , C04B38/0054 , C04B38/067
摘要： A method of producing a nanoporous silica dielectric film having improved mechanical strength. A composition is formed which comprises in admixture a porogen, a solvent, a catalyst and a combination of silicon containing pre-polymers.

6. 发明申请

US20050136687A1 Porous silica dielectric having improved etch selectivity towards inorganic anti-reflective coating materials for integrated circuit applications, and methods of manufacture 审中-公开
标题翻译：具有改进的针对集成电路应用的无机抗反射涂层材料的蚀刻选择性的多孔二氧化硅电介质以及制造方法
公开(公告)号：US20050136687A1
公开(公告)日：2005-06-23
申请号：US10741272
申请日：2003-12-19
申请人： Victor Lu , Bo Li , Deling Zhou , Roger Leung , Paul Apen
发明人： Victor Lu , Bo Li , Deling Zhou , Roger Leung , Paul Apen
IPC分类号： H01L21/311 , H01L21/312 , H01L21/316 , H01L21/768 , H01L21/76 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31116 , H01L21/31144 , H01L21/312 , H01L21/31695 , H01L21/7682 , H01L2221/1047
摘要： A composition comprising a nanoporous silica dielectric film having a void volume of about 30% or less based on the total volume of the nanoporous silica dielectric film, and having a dielectric constant of about 2.2 or less. A method of producing a nanoporous silica dielectric film having a void volume of about 30% or less based on the total volume of the nanoporous silica dielectric film, and having a dielectric constant of about 2.2 or less. A silicon containing pre-polymer is provided, which is capable of forming a film having a dielectric constant of about 2.8 or less. It is then combined with a porogen, and a metal-ion-free catalyst selected from the group consisting of onium compounds and nucleophiles, to thereby form a composition. A layer of the composition is coated on to a substrate, crosslinked to form a gelled film, and heated to remove substantially all of the porogen and to thereby produce a nanoporous silica dielectric film of the invention.
摘要翻译：一种组合物，其包含基于纳米多孔硅介电膜的总体积具有约30％或更小的空隙体积并且具有约2.2或更小的介电常数的纳米多孔硅介电膜。基于纳米多孔硅介电膜的总体积，并且具有约2.2或更小的介电常数，制备具有约30％或更小的空隙体积的纳米多孔二氧化硅电介质膜的方法。提供含硅预聚物，其能够形成介电常数为约2.8或更小的膜。然后将其与致孔剂和选自鎓化合物和亲核试剂的无金属离子的催化剂组合，从而形成组合物。将一层组合物涂布在基材上，交联以形成凝胶膜，并加热以除去基本上所有的致孔剂，从而制备本发明的纳米孔硅石介电膜。

7. 发明授权

US07307137B2 Low dielectric constant materials and methods of preparation thereof 有权
标题翻译：低介电常数材料及其制备方法
公开(公告)号：US07307137B2
公开(公告)日：2007-12-11
申请号：US10466651
申请日：2001-10-18
申请人： Kreisler Lau , Feng Quan Liu , Paul Apen , Boris Korolev , Emma Brouk , Ruslan Zherebin , David Nalewajek , Roger Leung
发明人： Kreisler Lau , Feng Quan Liu , Paul Apen , Boris Korolev , Emma Brouk , Ruslan Zherebin , David Nalewajek , Roger Leung
IPC分类号： C08G63/78
CPC分类号： C08G61/12 , C07C13/615 , C07C13/64 , C07C15/54 , C07C17/10 , C07C17/269 , C07C2603/74 , C07C2603/90 , C07F7/0805 , C08F238/00 , C08G61/02 , H01L2924/0002 , C07C23/46 , C07C25/22 , H01L2924/00
摘要： The present invention is directed to low dielectric polymers and to methods of producing these low dielectric constant polymers, dielectric materials and layers, and electronic components. In one aspect of the present invention, an isomeric mixture of thermosetting monomers, wherein the monomers have a core structure and a plurality of arms, is provided, and the isomeric mixture of thermosetting monomers is polymerized, wherein polymerization comprises a reaction of an ethynyl group that is located in at least one arm of a monomer. In yet another aspect of the inventive subject matter, spin-on low dielectric constant materials are formed having a first backbone with an aromatic moiety and a first reactive group, and a second backbone with an aromatic moiety and a second reactive group, wherein the first and second backbone are crosslinked via the first and second reactive groups in a crosslinking reaction preferably without an additional crosslinker, and wherein a cage structure having at least eight (8) atoms is covalently bound to at least one of the first and second backbone.
摘要翻译：本发明涉及低介电聚合物以及生产这些低介电常数聚合物，介电材料和层以及电子元件的方法。在本发明的一个方面，提供其中单体具有核心结构和多个臂的热固性单体的异构体混合物，并且热固性单体的异构体混合物聚合，其中聚合包括乙炔基其位于单体的至少一个臂中。在本发明主题的另一方面，形成旋涂低介电常数材料，其具有具有芳族部分和第一反应性基团的第一主链和具有芳族部分和第二反应性基团的第二主链，其中第一并且第二主链在交联反应中通过第一和第二反应性基团交联，优选不含另外的交联剂，并且其中具有至少八个（8）原子的笼结构共价结合至第一和第二主链中的至少一个。

8. 发明授权

US06841256B2 Low dielectric constant polyorganosilicon materials generated from polycarbosilanes 失效
标题翻译：由聚碳硅烷生成的低介电常数聚有机硅材料
公开(公告)号：US06841256B2
公开(公告)日：2005-01-11
申请号：US10122400
申请日：2002-04-11
申请人： Paul Apen , Hui-Jung Wu
发明人： Paul Apen , Hui-Jung Wu
IPC分类号： B05D3/06 , B05D5/12 , C09D183/16 , H01L21/312 , B32B25/20
CPC分类号： H01L21/02126 , B05D3/06 , B05D5/12 , C09D183/16 , H01L21/02203 , H01L21/02348 , H01L21/02351 , H01L21/3121 , Y10T428/31663
摘要： Methods are presented herein for forming thermally stable, adhesive, low dielectric constant polyorganosilicon dielectric films for use as semiconductor insulators and as adhesion promoters as and in conjunction with low k materials. Surprisingly, the methods described herein can provide polyorganosilicon materials, coatings and films having very low dielectric constants that are generated from specified polycarbosilane starting materials employing wet coating and standard high energy generating processes, without the need for exotic production techniques or incurring disadvantages found in other low k dielectric film-forming methods. The polycarbosilane compounds, polyorganosilane compounds, adhesion promoter materials and layered materials disclosed herein can be used in any suitable semiconductor or electronic application, including semiconductor devices, electronic devices, films and coatings.
摘要翻译：本文提出了用于形成用作半导体绝缘体的热稳定性，粘合性低介电常数聚有机硅介电膜的方法，以及与低k材料结合使用的粘合促进剂。令人惊奇的是，本文所述的方法可以提供具有非常低的介电常数的聚有机硅材料，涂层和薄膜，这些材料是使用湿式涂层和标准的高能量生成方法从指定的聚碳硅烷起始材料产生的，而不需要外来的生产技术或产生其他的缺点低k电介质成膜方法。本文公开的聚碳硅烷化合物，聚有机硅烷化合物，粘合促进剂材料和分层材料可用于任何合适的半导体或电子应用，包括半导体器件，电子器件，膜和涂层。

9. 发明申请

US20070155997A1 Organic compositions 审中-公开
标题翻译：有机成分
公开(公告)号：US20070155997A1
公开(公告)日：2007-07-05
申请号：US10536884
申请日：2003-12-31
申请人： Bo Li , Kreisler Lau , Paul Apen
发明人： Bo Li , Kreisler Lau , Paul Apen
IPC分类号： C07C13/615
CPC分类号： C07C17/10 , C07C13/615 , C07C13/64 , C07C17/269 , C07C2603/74 , C07C2603/90 , C08G61/06 , C07C23/46 , C07C25/22
摘要： Compositions and methods of forming and using those compositions are provided herein where the composition comprises at least one oligomer or polymer of Formula I wherein E is a cage compound; each Q is the same or different and selected from aryl, branched aryl, and substituted aryl wherein the substituents include hydrogen, halogen, alkyl, aryl, substituted aryl, heteroaryl, aryl ether, alkenyl, alkynyl, alkoxyl, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxyalkynyl, hydroxyl, or carboxyl; A is substituted or unsubstituted aryl with substituted or unsubstituted arylalkynyl group (substituents include hydrogen, halogen, alkyl, phenyl or substituted aryl; and aryl includes phenyl, biphenyl, naphthyl, terphenyl, anthracenyl, polyphenylene, polyphenylene ether, or substituted aryl); h is from 0 to 10; i is from 0 to 10; j is from 0 to 10; and w is 0 or 1.
摘要翻译：本文提供了组合物和形成和使用这些组合物的方法，其中组合物包含至少一种式I的低聚物或聚合物，其中E是笼形化合物; 每个Q相同或不同，选自芳基，支链芳基和取代芳基，其中取代基包括氢，卤素，烷基，芳基，取代的芳基，杂芳基，芳基醚，烯基，炔基，烷氧基，羟基烷基，羟基芳基，羟基烯基，羟基炔基，羟基或羧基; A是取代或未取代的具有取代或未取代的芳基炔基的芳基（取代基包括氢，卤素，烷基，苯基或取代的芳基;芳基包括苯基，联苯基，萘基，三联苯基，蒽基，聚亚苯基，聚苯醚或取代的芳基）。 h为0〜10; 我是从0到10; j为0〜10; w为0或1。

10. 发明申请

US20050090596A1 Organic composition 审中-公开
标题翻译：有机成分
公开(公告)号：US20050090596A1
公开(公告)日：2005-04-28
申请号：US10404676
申请日：2003-04-02
申请人： Paul Apen , Kreisler Lau , Boris Korolev , Bo Li , Ruslan Zherebin , Edward Sullivan , Christian Werner , Sonja Demel , Bernd Kellermeier , Andreas Kanschik-Conradsen
发明人： Paul Apen , Kreisler Lau , Boris Korolev , Bo Li , Ruslan Zherebin , Edward Sullivan , Christian Werner , Sonja Demel , Bernd Kellermeier , Andreas Kanschik-Conradsen
IPC分类号： C08G61/02 , C08G61/12 , C08K5/01
CPC分类号： C08G61/02 , C08G61/12
摘要： The present invention provides adamantane or diamantane compositions that are useful as a dielectric material in microelectronic applications such as microchips.
摘要翻译：本发明提供金刚烷或二金刚烷组合物，其可用作微电子应用如微芯片中的电介质材料。

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