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1. 发明授权

US06842261B2 Integrated circuit profile value determination 有权
标题翻译：集成电路剖面值确定
公开(公告)号：US06842261B2
公开(公告)日：2005-01-11
申请号：US10228692
申请日：2002-08-26
申请人： Junwei Bao , Wen Jin , Emmanuel Drege , Srinivas Doddi , Vi Vuong
发明人： Junwei Bao , Wen Jin , Emmanuel Drege , Srinivas Doddi , Vi Vuong
IPC分类号： G01B11/02 , G01N21/47 , G01N21/88 , G06F19/00 , H01L21/00
CPC分类号： G01N21/4788 , G03F7/70625
摘要： A profile parameter value is determined in integrated circuit metrology by: a) determining a diffraction signal difference based on a measured diffraction signal and a previously generated diffraction signal; b) determining a first profile parameter value based on the previously generated diffraction signal; c) determining a first profile parameter value change based on the diffraction signal difference; d) determining a second profile parameter value based on the first profile parameter value change; e) determining a second profile parameter value change between the first and second profile parameter values; f) determining if the second profile parameter value change meets one or more preset criteria; and g) when the second profile parameter value change fails to meet the one or more preset criteria, iterating c) to g) using as the diffraction signal difference in the iteration of step c), a diffraction signal difference determined based on the measured diffraction signal and a diffraction signal for the second profile parameter value previously determined in step d), and as the first profile parameter value in the iteration of step e), the second profile parameter value previously determined in step d).
摘要翻译：在集成电路测量中通过以下方式确定轮廓参数值：a）基于测量的衍射信号和先前产生的衍射信号来确定衍射信号差; b）基于先前产生的衍射信号确定第一轮廓参数值; c）基于所述衍射信号差确定第一轮廓参数值变化; d）基于所述第一轮廓参数值变化来确定第二轮廓参数值; e）确定所述第一和第二轮廓参数值之间的第二轮廓参数值变化; f）确定第二轮廓参数值变化是否满足一个或多个预设标准; 并且g）当第二轮廓参数值改变不能满足一个或多个预设标准时，迭代c）至g）在步骤c）的迭代中使用作为衍射信号差的衍射信号差，基于测得的衍射信号和用于在步骤d）中预先确定的第二轮廓参数值的衍射信号，以及作为步骤e）的迭代中的第一轮廓参数值，在步骤d）中预先确定的第二轮廓参数值。

2. 发明申请

US20070198211A1 Selection of wavelengths for integrated circuit optical metrology 有权
公开(公告)号：US20070198211A1
公开(公告)日：2007-08-23
申请号：US11788735
申请日：2007-04-20
申请人： Srinivas Doddi , Lawrence Lane , Vi Vuong , Michael Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
发明人： Srinivas Doddi , Lawrence Lane , Vi Vuong , Michael Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
IPC分类号： G01B11/02
CPC分类号： G01B11/00
摘要： Specific wavelengths to use in optical metrology of an integrated circuit can be selected using one or more selection criteria and termination criteria. Wavelengths are selected using the selection criteria, and the selection of wavelengths is iterated until the termination criteria are met.

3. 发明授权

US07505153B2 Model and parameter selection for optical metrology 有权
标题翻译：光学计量学的模型和参数选择
公开(公告)号：US07505153B2
公开(公告)日：2009-03-17
申请号：US12030166
申请日：2008-02-12
申请人： Vi Vuong , Emmanuel Drege , Junwei Bao , Srinivas Doddi , Xinhui Niu , Nickhil Jakatdar
发明人： Vi Vuong , Emmanuel Drege , Junwei Bao , Srinivas Doddi , Xinhui Niu , Nickhil Jakatdar
IPC分类号： G01B11/14 , G01B15/00 , G01B7/00 , G01N21/86 , G01V8/00 , G06F15/00 , G01R31/26 , H01L21/66
CPC分类号： G03F7/70616 , G03F7/705 , G03F7/70625
摘要： A profile model for use in optical metrology of structures in a wafer is selected, the profile model having a set of geometric parameters associated with the dimensions of the structure. The set of geometric parameters is selected to a set of optimization parameters. The number of optimization parameters within the set of optimization parameters is less than the number of geometric parameters within the set of geometric parameters. A set of selected optimization parameters is selected from the set of optimization parameters. The parameters of the set of selected geometric parameters are used as parameters of the selected profile model. The selected profile model is tested against one or more termination criteria.
摘要翻译：选择用于晶片中结构的光学测量的轮廓模型，轮廓模型具有与结构的尺寸相关联的一组几何参数。选择几组参数集合到一组优化参数中。该组优化参数内的优化参数的数量小于该组几何参数内的几何参数的数量。从一组优化参数中选择一组选定的优化参数。所选择的几何参数集合中的参数被用作所选轮廓模型的参数。根据一个或多个终止标准测试所选的配置文件模型。

4. 发明授权

US06853942B2 Metrology hardware adaptation with universal library 有权
标题翻译：通用图书馆的计量硬件调整
公开(公告)号：US06853942B2
公开(公告)日：2005-02-08
申请号：US10213485
申请日：2002-08-06
申请人： Emmanuel Drege , Junwei Bao , Srinivas Doddi , Vi Vuong
发明人： Emmanuel Drege , Junwei Bao , Srinivas Doddi , Vi Vuong
IPC分类号： G01N21/956 , G06F19/00 , G01B9/02 , G01B11/24 , G06K9/46
CPC分类号： G03F7/70516 , G01N21/956 , G03F7/70625
摘要： To generate sets of coefficients for use in optical metrology of semiconductor structures, at least three optical metrology signals for a set of parameters are obtained. The optical metrology signals are indicative of light diffracted from a semiconductor structure, and a value of at least one parameter of the set of parameters is varied to produce each signal. Functional relationships between the at least three optical metrology signals are obtained, the functional relationships including at least three coefficient values. At least three sets of coefficients from the at least three coefficient values of the functional relationships are determined.
摘要翻译：为了产生用于半导体结构的光学测量的系数集合，获得用于一组参数的至少三个光学测量信号。光学测量信号指示从半导体结构衍射的光，并且改变该组参数中的至少一个参数的值以产生每个信号。获得至少三个光学测量信号之间的功能关系，所述功能关系包括至少三个系数值。确定来自功能关系的至少三个系数值的至少三组系数。

5. 发明授权

US07330279B2 Model and parameter selection for optical metrology 有权
标题翻译：光学计量学的模型和参数选择
公开(公告)号：US07330279B2
公开(公告)日：2008-02-12
申请号：US10206491
申请日：2002-07-25
申请人： Vi Vuong , Emmanuel Drege , Junwei Bao , Srinivas Doddi , Xinhui Niu , Nickhil Jakatdar
发明人： Vi Vuong , Emmanuel Drege , Junwei Bao , Srinivas Doddi , Xinhui Niu , Nickhil Jakatdar
IPC分类号： G01B11/14 , G01B7/00 , G01B15/00 , G01N21/86 , G01V8/00 , G06F15/00 , G01R31/26 , H01L21/66
CPC分类号： G03F7/70616 , G03F7/705 , G03F7/70625
摘要： A profile model for use in optical metrology of structures in a wafer is selected, the profile model having a set of geometric parameters associated with the dimensions of the structure. A set of optimization parameters is selected for the profile model using one or more input diffraction signals and one or more parameter selection criteria. The selected profile model and the set of optimization parameters are tested against one or more termination criteria. The process of selecting a profile model, selecting a set of optimization parameters, and testing the selected profile model and set of optimization parameters is performed until the one or more termination criteria are met.
摘要翻译：选择用于晶片中结构的光学测量的轮廓模型，轮廓模型具有与结构的尺寸相关联的一组几何参数。使用一个或多个输入衍射信号和一个或多个参数选择标准为轮廓模型选择一组优化参数。根据一个或多个终止标准测试所选择的简档模型和优化参数集合。执行选择简档模型，选择一组优化参数以及测试所选简档模型和优化参数的集合的过程，直到满足一个或多个终止标准。

6. 发明授权

US07394554B2 Selecting a hypothetical profile to use in optical metrology 有权
标题翻译：选择用于光学计量学的假设剖面
公开(公告)号：US07394554B2
公开(公告)日：2008-07-01
申请号：US10663300
申请日：2003-09-15
申请人： Vi Vuong , Junwei Bao , Srinivas Doddi , Emmanuel Drege , Jin Wen , Sanjay Yedur , Doris Chin , Nickhil Jakatdar , Lawrence Lane
发明人： Vi Vuong , Junwei Bao , Srinivas Doddi , Emmanuel Drege , Jin Wen , Sanjay Yedur , Doris Chin , Nickhil Jakatdar , Lawrence Lane
IPC分类号： G01B11/00
CPC分类号： G01B11/306 , G03F7/70625
摘要： A hypothetical profile is used to model the profile of a structure formed on a semiconductor wafer to use in determining the profile of the structure using optical metrology.To select a hypothetical profile, sample diffraction signals are obtained from measured diffraction signals of structures formed on the wafer, where the sample diffraction signals are a representative sampling of the measured diffraction signals. A hypothetical profile is defined and evaluated using a sample diffraction signal from the obtained sample diffraction signals.
摘要翻译：使用假设的轮廓来对形成在半导体晶片上的结构的轮廓进行建模，以用于使用光学计量来确定结构的轮廓。为了选择一个假设的曲线，样品衍射信号是从晶片上形成的结构的测量衍射信号获得的，其中样品衍射信号是测量的衍射信号的代表性采样。使用来自所获得的样品衍射信号的样品衍射信号来定义和评估假设轮廓。

7. 发明授权

US07474993B2 Selection of wavelengths for integrated circuit optical metrology 有权
标题翻译：集成电路光学测量的波长选择
公开(公告)号：US07474993B2
公开(公告)日：2009-01-06
申请号：US11788735
申请日：2007-04-20
申请人： Srinivas Doddi , Lawrence Lane , Vi Vuong , Michael Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
发明人： Srinivas Doddi , Lawrence Lane , Vi Vuong , Michael Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
IPC分类号： G01R13/00 , G01R31/26
CPC分类号： G01B11/00
摘要： Specific wavelengths to use in optical metrology of an integrated circuit can be selected using one or more selection criteria and termination criteria. Wavelengths are selected using the selection criteria, and the selection of wavelengths is iterated until the termination criteria are met.
摘要翻译：可以使用一个或多个选择标准和终止标准来选择用于集成电路的光学测量的特定波长。使用选择标准选择波长，并重复选择波长，直到满足终止标准。

8. 发明申请

US20080151269A1 MODEL AND PARAMETER SELECTION FOR OPTICAL METROLOGY 有权
标题翻译：光学计量学的模型和参数选择
公开(公告)号：US20080151269A1
公开(公告)日：2008-06-26
申请号：US12030166
申请日：2008-02-12
申请人： Vi Vuong , Emmanuel Drege , Junwei Bao , Srinivas Doddi , Xinhui Niu , Nickhil Jakatdar
发明人： Vi Vuong , Emmanuel Drege , Junwei Bao , Srinivas Doddi , Xinhui Niu , Nickhil Jakatdar
IPC分类号： G01B11/14
CPC分类号： G03F7/70616 , G03F7/705 , G03F7/70625
摘要： A profile model for use in optical metrology of structures in a wafer is selected, the profile model having a set of geometric parameters associated with the dimensions of the structure. The set of geometric parameters is selected to a set of optimization parameters. The number of optimization parameters within the set of optimization parameters is less than the number of geometric parameters within the set of geometric parameters. A set of selected optimization parameters is selected from the set of optimization parameters. The parameters of the set of selected geometric parameters are used as parameters of the selected profile model. The selected profile model is tested against one or more termination criteria.
摘要翻译：选择用于晶片中结构的光学测量的轮廓模型，轮廓模型具有与结构的尺寸相关联的一组几何参数。选择几组参数集合到一组优化参数中。该组优化参数内的优化参数的数量小于该组几何参数内的几何参数的数量。从一组优化参数中选择一组选定的优化参数。所选择的几何参数集合中的参数被用作所选轮廓模型的参数。根据一个或多个终止标准测试所选的配置文件模型。

9. 发明授权

US07216045B2 Selection of wavelengths for integrated circuit optical metrology 有权
标题翻译：集成电路光学测量的波长选择
公开(公告)号：US07216045B2
公开(公告)日：2007-05-08
申请号：US10162516
申请日：2002-06-03
申请人： Srinivas Doddi , Lawrence Lane , Vi Vuong , Mike Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
发明人： Srinivas Doddi , Lawrence Lane , Vi Vuong , Mike Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
IPC分类号： G01R13/00 , G01R31/26
CPC分类号： G01B11/00
摘要： Specific wavelengths to use in optical metrology of an integrated circuit can be selected using one or more selection criteria and termination criteria. Wavelengths are selected using the selection criteria, and the selection of wavelengths is iterated until the termination criteria are met.
摘要翻译：可以使用一个或多个选择标准和终止标准来选择用于集成电路的光学测量的特定波长。使用选择标准选择波长，并重复选择波长，直到满足终止标准。

10. 发明授权

US07523076B2 Selecting a profile model for use in optical metrology using a machine learning system 失效
标题翻译：使用机器学习系统选择用于光学测量的轮廓模型
公开(公告)号：US07523076B2
公开(公告)日：2009-04-21
申请号：US10791046
申请日：2004-03-01
申请人： Emmanuel Drege , Srinivas Doddi , Junwei Bao
发明人： Emmanuel Drege , Srinivas Doddi , Junwei Bao
IPC分类号： G06F15/18
CPC分类号： G06N99/005 , G03F7/70625
摘要： A profile model can be selected for use in examining a structure formed on a semiconductor wafer using optical metrology by obtaining an initial profile model having a set of profile parameters. A machine learning system is trained using the initial profile model. A simulated diffraction signal is generated for an optimized profile model using the trained machine learning system, where the optimized profile model has a set of profile parameters with the same or fewer profile parameters than the initial profile model. A determination is made as to whether the one or more termination criteria are met. If the one or more termination criteria are met, the optimized profile model is modified and another simulated diffraction signal is generated using the same trained machine learning system.
摘要翻译：可以通过获得具有一组轮廓参数的初始轮廓模型来选择轮廓模型用于检查在半导体晶片上形成的结构。使用初始轮廓模型训练机器学习系统。使用训练的机器学习系统为优化的轮廓模型生成模拟衍射信号，其中优化的轮廓模型具有与初始轮廓模型相同或更少的轮廓参数的一组轮廓参数。确定是否满足一个或多个终止标准。如果满足一个或多个终止标准，则优化的轮廓模型被修改，并且使用相同训练的机器学习系统产生另一个模拟衍射信号。

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