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1. 发明申请

US20050057748A1 Selecting a hypothetical profile to use in optical metrology 有权
标题翻译：选择用于光学计量学的假设剖面
公开(公告)号：US20050057748A1
公开(公告)日：2005-03-17
申请号：US10663300
申请日：2003-09-15
申请人： Vi Vuong , Junwei Bao , Srini Doddi , Emmanuel Drege , Jin Wen , Sanjay Yedur , Doris Chin , Nickhil Jakatdar , Lawrence Lane
发明人： Vi Vuong , Junwei Bao , Srini Doddi , Emmanuel Drege , Jin Wen , Sanjay Yedur , Doris Chin , Nickhil Jakatdar , Lawrence Lane
IPC分类号： G01B11/24 , G01B11/30 , G01N21/00 , G01N21/17 , G01N21/84 , G01N21/956 , G01R31/26 , G06F19/00 , H01L21/02 , H01L21/66
CPC分类号： G01B11/306 , G03F7/70625
摘要： A hypothetical profile is used to model the profile of a structure formed on a semiconductor wafer to use in determining the profile of the structure using optical metrology. To select a hypothetical profile, sample diffraction signals are obtained from measured diffraction signals of structures formed on the wafer, where the sample diffraction signals are a representative sampling of the measured diffraction signals. A hypothetical profile is defined and evaluated using a sample diffraction signal from the obtained sample diffraction signals.
摘要翻译：使用假设的轮廓来对形成在半导体晶片上的结构的轮廓进行建模，以用于使用光学计量来确定结构的轮廓。为了选择一个假设的曲线，样品衍射信号是从晶片上形成的结构的测量衍射信号获得的，其中样品衍射信号是测量的衍射信号的代表性采样。使用来自所获得的样品衍射信号的样品衍射信号来定义和评估假设轮廓。

2. 发明授权

US07394554B2 Selecting a hypothetical profile to use in optical metrology 有权
标题翻译：选择用于光学计量学的假设剖面
公开(公告)号：US07394554B2
公开(公告)日：2008-07-01
申请号：US10663300
申请日：2003-09-15
申请人： Vi Vuong , Junwei Bao , Srinivas Doddi , Emmanuel Drege , Jin Wen , Sanjay Yedur , Doris Chin , Nickhil Jakatdar , Lawrence Lane
发明人： Vi Vuong , Junwei Bao , Srinivas Doddi , Emmanuel Drege , Jin Wen , Sanjay Yedur , Doris Chin , Nickhil Jakatdar , Lawrence Lane
IPC分类号： G01B11/00
CPC分类号： G01B11/306 , G03F7/70625
摘要： A hypothetical profile is used to model the profile of a structure formed on a semiconductor wafer to use in determining the profile of the structure using optical metrology.To select a hypothetical profile, sample diffraction signals are obtained from measured diffraction signals of structures formed on the wafer, where the sample diffraction signals are a representative sampling of the measured diffraction signals. A hypothetical profile is defined and evaluated using a sample diffraction signal from the obtained sample diffraction signals.
摘要翻译：使用假设的轮廓来对形成在半导体晶片上的结构的轮廓进行建模，以用于使用光学计量来确定结构的轮廓。为了选择一个假设的曲线，样品衍射信号是从晶片上形成的结构的测量衍射信号获得的，其中样品衍射信号是测量的衍射信号的代表性采样。使用来自所获得的样品衍射信号的样品衍射信号来定义和评估假设轮廓。

3. 发明申请

US20070198211A1 Selection of wavelengths for integrated circuit optical metrology 有权
公开(公告)号：US20070198211A1
公开(公告)日：2007-08-23
申请号：US11788735
申请日：2007-04-20
申请人： Srinivas Doddi , Lawrence Lane , Vi Vuong , Michael Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
发明人： Srinivas Doddi , Lawrence Lane , Vi Vuong , Michael Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
IPC分类号： G01B11/02
CPC分类号： G01B11/00
摘要： Specific wavelengths to use in optical metrology of an integrated circuit can be selected using one or more selection criteria and termination criteria. Wavelengths are selected using the selection criteria, and the selection of wavelengths is iterated until the termination criteria are met.

4. 发明授权

US07474993B2 Selection of wavelengths for integrated circuit optical metrology 有权
标题翻译：集成电路光学测量的波长选择
公开(公告)号：US07474993B2
公开(公告)日：2009-01-06
申请号：US11788735
申请日：2007-04-20
申请人： Srinivas Doddi , Lawrence Lane , Vi Vuong , Michael Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
发明人： Srinivas Doddi , Lawrence Lane , Vi Vuong , Michael Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
IPC分类号： G01R13/00 , G01R31/26
CPC分类号： G01B11/00
摘要： Specific wavelengths to use in optical metrology of an integrated circuit can be selected using one or more selection criteria and termination criteria. Wavelengths are selected using the selection criteria, and the selection of wavelengths is iterated until the termination criteria are met.
摘要翻译：可以使用一个或多个选择标准和终止标准来选择用于集成电路的光学测量的特定波长。使用选择标准选择波长，并重复选择波长，直到满足终止标准。

5. 发明授权

US07216045B2 Selection of wavelengths for integrated circuit optical metrology 有权
标题翻译：集成电路光学测量的波长选择
公开(公告)号：US07216045B2
公开(公告)日：2007-05-08
申请号：US10162516
申请日：2002-06-03
申请人： Srinivas Doddi , Lawrence Lane , Vi Vuong , Mike Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
发明人： Srinivas Doddi , Lawrence Lane , Vi Vuong , Mike Laughery , Junwei Bao , Kelly Barry , Nickhil Jakatdar , Emmanuel Drege
IPC分类号： G01R13/00 , G01R31/26
CPC分类号： G01B11/00
摘要： Specific wavelengths to use in optical metrology of an integrated circuit can be selected using one or more selection criteria and termination criteria. Wavelengths are selected using the selection criteria, and the selection of wavelengths is iterated until the termination criteria are met.
摘要翻译：可以使用一个或多个选择标准和终止标准来选择用于集成电路的光学测量的特定波长。使用选择标准选择波长，并重复选择波长，直到满足终止标准。

6. 发明授权

US07505153B2 Model and parameter selection for optical metrology 有权
标题翻译：光学计量学的模型和参数选择
公开(公告)号：US07505153B2
公开(公告)日：2009-03-17
申请号：US12030166
申请日：2008-02-12
申请人： Vi Vuong , Emmanuel Drege , Junwei Bao , Srinivas Doddi , Xinhui Niu , Nickhil Jakatdar
发明人： Vi Vuong , Emmanuel Drege , Junwei Bao , Srinivas Doddi , Xinhui Niu , Nickhil Jakatdar
IPC分类号： G01B11/14 , G01B15/00 , G01B7/00 , G01N21/86 , G01V8/00 , G06F15/00 , G01R31/26 , H01L21/66
CPC分类号： G03F7/70616 , G03F7/705 , G03F7/70625
摘要： A profile model for use in optical metrology of structures in a wafer is selected, the profile model having a set of geometric parameters associated with the dimensions of the structure. The set of geometric parameters is selected to a set of optimization parameters. The number of optimization parameters within the set of optimization parameters is less than the number of geometric parameters within the set of geometric parameters. A set of selected optimization parameters is selected from the set of optimization parameters. The parameters of the set of selected geometric parameters are used as parameters of the selected profile model. The selected profile model is tested against one or more termination criteria.
摘要翻译：选择用于晶片中结构的光学测量的轮廓模型，轮廓模型具有与结构的尺寸相关联的一组几何参数。选择几组参数集合到一组优化参数中。该组优化参数内的优化参数的数量小于该组几何参数内的几何参数的数量。从一组优化参数中选择一组选定的优化参数。所选择的几何参数集合中的参数被用作所选轮廓模型的参数。根据一个或多个终止标准测试所选的配置文件模型。

7. 发明申请

US20080151269A1 MODEL AND PARAMETER SELECTION FOR OPTICAL METROLOGY 有权
标题翻译：光学计量学的模型和参数选择
公开(公告)号：US20080151269A1
公开(公告)日：2008-06-26
申请号：US12030166
申请日：2008-02-12
申请人： Vi Vuong , Emmanuel Drege , Junwei Bao , Srinivas Doddi , Xinhui Niu , Nickhil Jakatdar
发明人： Vi Vuong , Emmanuel Drege , Junwei Bao , Srinivas Doddi , Xinhui Niu , Nickhil Jakatdar
IPC分类号： G01B11/14
CPC分类号： G03F7/70616 , G03F7/705 , G03F7/70625
摘要： A profile model for use in optical metrology of structures in a wafer is selected, the profile model having a set of geometric parameters associated with the dimensions of the structure. The set of geometric parameters is selected to a set of optimization parameters. The number of optimization parameters within the set of optimization parameters is less than the number of geometric parameters within the set of geometric parameters. A set of selected optimization parameters is selected from the set of optimization parameters. The parameters of the set of selected geometric parameters are used as parameters of the selected profile model. The selected profile model is tested against one or more termination criteria.
摘要翻译：选择用于晶片中结构的光学测量的轮廓模型，轮廓模型具有与结构的尺寸相关联的一组几何参数。选择几组参数集合到一组优化参数中。该组优化参数内的优化参数的数量小于该组几何参数内的几何参数的数量。从一组优化参数中选择一组选定的优化参数。所选择的几何参数集合中的参数被用作所选轮廓模型的参数。根据一个或多个终止标准测试所选的配置文件模型。

8. 发明授权

US07330279B2 Model and parameter selection for optical metrology 有权
标题翻译：光学计量学的模型和参数选择
公开(公告)号：US07330279B2
公开(公告)日：2008-02-12
申请号：US10206491
申请日：2002-07-25
申请人： Vi Vuong , Emmanuel Drege , Junwei Bao , Srinivas Doddi , Xinhui Niu , Nickhil Jakatdar
发明人： Vi Vuong , Emmanuel Drege , Junwei Bao , Srinivas Doddi , Xinhui Niu , Nickhil Jakatdar
IPC分类号： G01B11/14 , G01B7/00 , G01B15/00 , G01N21/86 , G01V8/00 , G06F15/00 , G01R31/26 , H01L21/66
CPC分类号： G03F7/70616 , G03F7/705 , G03F7/70625
摘要： A profile model for use in optical metrology of structures in a wafer is selected, the profile model having a set of geometric parameters associated with the dimensions of the structure. A set of optimization parameters is selected for the profile model using one or more input diffraction signals and one or more parameter selection criteria. The selected profile model and the set of optimization parameters are tested against one or more termination criteria. The process of selecting a profile model, selecting a set of optimization parameters, and testing the selected profile model and set of optimization parameters is performed until the one or more termination criteria are met.
摘要翻译：选择用于晶片中结构的光学测量的轮廓模型，轮廓模型具有与结构的尺寸相关联的一组几何参数。使用一个或多个输入衍射信号和一个或多个参数选择标准为轮廓模型选择一组优化参数。根据一个或多个终止标准测试所选择的简档模型和优化参数集合。执行选择简档模型，选择一组优化参数以及测试所选简档模型和优化参数的集合的过程，直到满足一个或多个终止标准。

9. 发明授权

US07092110B2 Optimized model and parameter selection for optical metrology 有权
标题翻译：光学测量的优化模型和参数选择
公开(公告)号：US07092110B2
公开(公告)日：2006-08-15
申请号：US10397631
申请日：2003-03-25
申请人： Raghu Balasubramanian , Sanjay Yedur , Vi Vuong , Nickhil Jakatdar
发明人： Raghu Balasubramanian , Sanjay Yedur , Vi Vuong , Nickhil Jakatdar
IPC分类号： G01B11/14 , G01B7/00 , G01N21/86 , G01R31/26
CPC分类号： G06T7/0006 , G01N21/4788 , G03F7/705 , G03F7/70616 , G03F7/70625 , G06T2207/30148
摘要： A profile model for use in optical metrology of structures in a wafer is selected based on a template having one or more parameters including characteristics of process and modeling attributes associated with a structure in a wafer. The process includes performing a profile modeling process to generate a profile model of a wafer structure based on a template having one or more parameters including characteristics of process and modeling attributes. The profile model includes a set of geometric parameters associated with the dimensions of the structure. The generated profile model may further be tested against termination criteria and the one or more parameters modified. The process of performing a modeling process to generate a profile model and testing the generated profile model may be repeated until the termination criteria are met.
摘要翻译：基于具有一个或多个参数的模板来选择用于晶片中结构的光学测量的轮廓模型，该模板包括与晶片中的结构相关联的过程和建模属性的特征。该过程包括执行轮廓建模过程以基于具有包括过程和建模属性的特征的一个或多个参数的模板来生成晶片结构的轮廓模型。轮廓模型包括与结构的尺寸相关联的一组几何参数。可以进一步根据终止标准测试生成的简档模型，并修改一个或多个参数。可以重复执行建模过程以生成简档模型并测试生成的简档模型的过程，直到满足终止标准。

10. 发明授权

US06609086B1 Profile refinement for integrated circuit metrology 有权
标题翻译：集成电路测量的轮廓细化
公开(公告)号：US06609086B1
公开(公告)日：2003-08-19
申请号：US10075904
申请日：2002-02-12
申请人： Junwei Bao , Srinivas Doddi , Nickhil Jakatdar , Vi Vuong
发明人： Junwei Bao , Srinivas Doddi , Nickhil Jakatdar , Vi Vuong
IPC分类号： G06F1900
CPC分类号： G01B11/24 , G01N21/4788 , G03F7/70625
摘要： The present invention includes a method and system for determining the profile of a structure in an integrated circuit from a measured signal, the signal measured off the structure with a metrology device, selecting a best match of the measured signal in a profile data space, the profile data space having data points with a specified extent of non-linearity, and performing a refinement procedure to determine refined profile parameters. One embodiment includes a refinement procedure comprising finding a polyhedron in a function domain of cost functions of the profile library signals and profile parameters and minimizing the total cost function using the weighted average method. Other embodiments include profile parameter refinement procedures using sensitivity analysis, a clustering approach, regression-based methods, localized fine-resolution refinement library method, iterative library refinement method, and other cost optimization or refinement algorithms, procedures, and methods. Refinement of profile parameters may be invoked automatically or invoked based on predetermined criteria such as exceeding an error metric between the measured signal versus the best match profile library.
摘要翻译：本发明包括一种用于从测量信号确定集成电路中的结构的轮廓的方法和系统，使用测量装置测量结构的信号，在轮廓数据空间中选择测量信号的最佳匹配，具有指定非线性范围的数据点的简档数据空间，以及执行细化过程以确定精确的简档参数。一个实施例包括细化程序，包括在简档库信号和简档参数的成本函数的功能域中找到多面体，并且使用加权平均方法最小化总成本函数。其他实施例包括使用灵敏度分析的简档参数细化程序，聚类方法，基于回归的方法，局部精细分辨率细化库方法，迭代库细化方法以及其他成本优化或细化算法，程序和方法。简档参数的细化可以基于预定标准自动调用或调用，例如超过测量信号与最佳匹配简档库之间的误差度量。

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