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1. 发明授权

US08528175B2 Methods of forming capacitors 有权
标题翻译：形成电容器的方法
公开(公告)号：US08528175B2
公开(公告)日：2013-09-10
申请号：US13339692
申请日：2011-12-29
申请人： Vassil Antonov , Vishwanath Bhat , Chris M. Carlson
发明人： Vassil Antonov , Vishwanath Bhat , Chris M. Carlson
IPC分类号： H01G7/00
CPC分类号： H01G4/1272 , H01G4/1209 , H01G4/1218 , H01G4/1227 , H01G4/1245 , H01G4/1254 , H01G4/33
摘要： Some embodiments include methods of forming capacitors. A metal oxide mixture may be formed over a first capacitor electrode. The metal oxide mixture may have a continuous concentration gradient of a second component relative to a first component. The continuous concentration gradient may correspond to a decreasing concentration of the second component as a distance from the first capacitor electrode increases. The first component may be selected from the group consisting of zirconium oxide, hafnium oxide and mixtures thereof; and the second component may be selected from the group consisting of niobium oxide, titanium oxide, strontium oxide and mixtures thereof. A second capacitor electrode may be formed over the first capacitor electrode. Some embodiments include capacitors that contain at least one metal oxide mixture having a continuous concentration gradient of the above-described second component relative to the above-described first component.
摘要翻译：一些实施例包括形成电容器的方法。可以在第一电容器电极上形成金属氧化物混合物。金属氧化物混合物可以具有相对于第一组分的第二组分的连续浓度梯度。连续浓度梯度可以对应于与第一电容器电极的距离增加时第二组分的浓度降低。第一组分可以选自氧化锆，氧化铪及其混合物; 并且第二组分可以选自氧化铌，氧化钛，氧化锶及其混合物。可以在第一电容器电极上形成第二电容器电极。一些实施方案包括相对于上述第一组分含有至少一种具有上述第二组分的连续浓度梯度的金属氧化物混合物的电容器。

2. 发明授权

US09159551B2 Methods of forming capacitors 有权
标题翻译：形成电容器的方法
公开(公告)号：US09159551B2
公开(公告)日：2015-10-13
申请号：US12496890
申请日：2009-07-02
申请人： Vassil Antonov , Vishwanath Bhat
发明人： Vassil Antonov , Vishwanath Bhat
IPC分类号： H01G4/00 , H01G5/00 , H01G7/00 , H01G9/00 , H01G13/00 , H01B13/00 , C23F1/00 , C23F3/00 , H01L21/02 , H01L21/3105 , H01L49/02
CPC分类号： H01L21/02356 , H01L21/02175 , H01L21/02186 , H01L21/3105 , H01L28/65
摘要： A method of forming a capacitor includes depositing a dielectric metal oxide layer of a first phase to a thickness no greater than 75 Angstroms over an inner conductive capacitor electrode material. The first phase dielectric metal oxide layer has a k of at least 15. Conductive RuO2 is deposited over and into physical contact with the dielectric metal oxide layer. Then, the RuO2 and the dielectric metal oxide layer are annealed at a temperature below 500° C. The RuO2 in physical contact with the dielectric metal oxide during the annealing facilitates a change of the dielectric metal oxide layer from the first phase to a second crystalline phase having a higher k than the first phase. The annealed dielectric metal oxide layer is incorporated into a capacitor dielectric region of a capacitor construction. Other implementations are disclosed.
摘要翻译：形成电容器的方法包括在内部导电电容器电极材料上沉积第一相的电介质金属氧化物层至不大于75埃的厚度。第一相介电金属氧化物层的k至少为15.导电RuO 2沉积在物理接触介电金属氧化物层上。然后，RuO 2和介电金属氧化物层在低于500℃的温度下退火。退火期间与电介质金属氧化物物理接触的RuO 2促进介电金属氧化物层从第一相到第二晶体的变化相具有比第一相高的k。退火的介质金属氧化物层被结合到电容器结构的电容器电介质区域中。公开了其他实现。

3. 发明授权

US08513807B2 Semiconductor devices including a ruthenium film 有权
标题翻译：包括钌膜的半导体器件
公开(公告)号：US08513807B2
公开(公告)日：2013-08-20
申请号：US13407185
申请日：2012-02-28
申请人： Vishwanath Bhat , Dan Gealy , Vassil Antonov
发明人： Vishwanath Bhat , Dan Gealy , Vassil Antonov
IPC分类号： H01L21/44
CPC分类号： H01L28/40 , C23C16/029 , C23C16/18 , H01G4/085 , H01G4/1209 , H01L27/10852 , H01L28/65 , H01L28/75
摘要： Methods for forming ruthenium films and semiconductor devices such as capacitors that include the films are provided.
摘要翻译：提供形成钌膜的方法和诸如包括膜的电容器的半导体器件。

4. 发明授权

US08208241B2 Crystallographically orientated tantalum pentoxide and methods of making same 有权
标题翻译：晶体取向的五氧化二钽及其制备方法
公开(公告)号：US08208241B2
公开(公告)日：2012-06-26
申请号：US12132758
申请日：2008-06-04
申请人： Vishwanath Bhat , Vassil Antonov
发明人： Vishwanath Bhat , Vassil Antonov
IPC分类号： H01G4/06
CPC分类号： C23C16/405 , C23C16/4488 , C30B25/02 , C30B29/16 , H01L21/31637 , H01L28/65
摘要： Methods of forming an oxide are disclosed and include contacting a ruthenium-containing material with a tantalum-containing precursor and contacting the ruthenium-containing material with a vapor that includes water and optionally molecular hydrogen (H2). Articles including a first crystalline tantalum pentoxide and a second crystalline tantalum pentoxide on at least a portion of the first crystalline tantalum pentoxide, wherein the first tantalum pentoxide has a crystallographic orientation that is different than the crystallographic orientation of the second crystalline tantalum pentoxide, are also disclosed.
摘要翻译：公开了形成氧化物的方法，包括使含钌材料与含钽前体接触，并使含钌材料与包含水和任选的分子氢（H 2）的蒸气接触。在第一结晶五氧化二钽的至少一部分上包含第一结晶五氧化二钽和第二结晶五氧化二钽的物品，其中第一五氧化二钽具有不同于第二结晶五氧化二钽的晶体取向的晶体取向，也是披露

5. 发明授权

US08124528B2 Method for forming a ruthenium film 有权
标题翻译：形成钌膜的方法
公开(公告)号：US08124528B2
公开(公告)日：2012-02-28
申请号：US12100632
申请日：2008-04-10
申请人： Vishwanath Bhat , Dan Gealy , Vassil Antonov
发明人： Vishwanath Bhat , Dan Gealy , Vassil Antonov
IPC分类号： H01L21/44
CPC分类号： H01L28/40 , C23C16/029 , C23C16/18 , H01G4/085 , H01G4/1209 , H01L27/10852 , H01L28/65 , H01L28/75
摘要： Methods for forming ruthenium films and semiconductor devices such as capacitors that include the films are provided.
摘要翻译：提供形成钌膜的方法和诸如包括膜的电容器的半导体器件。

6. 发明授权

US08940388B2 Insulative elements 有权
标题翻译：绝缘元素
公开(公告)号：US08940388B2
公开(公告)日：2015-01-27
申请号：US13038605
申请日：2011-03-02
申请人： Vassil Antonov , Jennifer K. Sigman , Vishwanath Bhat , Matthew N. Rocklein , Bhaskar Srinivasan , Chris Carlson
发明人： Vassil Antonov , Jennifer K. Sigman , Vishwanath Bhat , Matthew N. Rocklein , Bhaskar Srinivasan , Chris Carlson
IPC分类号： B32B7/02 , H01G4/33 , H01G4/30 , H01G4/12
CPC分类号： H01L28/40 , H01G4/1209 , H01G4/1218 , H01G4/1236 , H01G4/1254 , H01G4/1272 , H01G4/306 , H01G4/33 , H01L21/02172 , H01L21/02356 , H01L21/225 , Y10T428/2495
摘要： Methods of forming an insulative element are described, including forming a first metal oxide material having a first dielectric constant, forming a second metal oxide material having a second dielectric constant different from the first, and heating at least portions of the structure to crystallize at least a portion of at least one of the first dielectric material and the second dielectric material. Methods of forming a capacitor are described, including forming a first electrode, forming a dielectric material with a first oxide and a second oxide over the first electrode, and forming a second electrode over the dielectric material. Structures including dielectric materials are also described.
摘要翻译：描述了形成绝缘元件的方法，包括形成具有第一介电常数的第一金属氧化物材料，形成具有与第一介电常数不同的第二介电常数的第二金属氧化物材料，并加热该结构的至少部分至少结晶第一电介质材料和第二电介质材料中的至少一个的一部分。描述了形成电容器的方法，包括形成第一电极，在第一电极上形成具有第一氧化物和第二氧化物的介电材料，以及在电介质材料上形成第二电极。还描述了包括电介质材料的结构。

7. 发明授权

US08518486B2 Methods of forming and utilizing rutile-type titanium oxide 有权
标题翻译：形成和利用金红石型氧化钛的方法
公开(公告)号：US08518486B2
公开(公告)日：2013-08-27
申请号：US12778893
申请日：2010-05-12
申请人： Nik Mirin , Tsai-Yu Huang , Vishwanath Bhat , Chris Carlson , Vassil Antonov
发明人： Nik Mirin , Tsai-Yu Huang , Vishwanath Bhat , Chris Carlson , Vassil Antonov
IPC分类号： C23C16/00
CPC分类号： H01L21/02186 , C01G23/04 , C23C16/405 , C23C16/45534 , H01G4/085 , H01G4/1227 , H01G4/33 , H01L21/02233 , H01L21/02244 , H01L21/28556 , H01L21/32051 , H01L23/367 , H01L23/3735 , H01L23/3736 , H01L27/10808 , H01L27/1085 , H01L27/10852 , H01L28/40 , H01L28/60 , H01L2924/0002 , H05K1/0203 , Y10T428/24802 , Y10T428/24975 , H01L2924/00
摘要： Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.
摘要翻译：一些实施方案包括形成金红石型氧化钛的方法。可以形成单层的氮化钛。然后氮化钛单层可以在小于或等于约550℃的温度下被氧化，以将其转化为金红石型氧化钛的单层。一些实施方案包括形成具有金红石型氧化钛电介质的电容器并且具有至少一个包含氮化钛的电极的方法。一些实施方案包括含有氮化钛和金红石型氧化钛的导热叠层，并且一些实施方案包括形成这种叠层的方法。

8. 发明申请

US20120267757A1 CAPACITOR STRUCTURE WITH METAL BILAYER AND METHOD FOR USING THE SAME 有权
标题翻译：金属双层电容器结构及其使用方法
公开(公告)号：US20120267757A1
公开(公告)日：2012-10-25
申请号：US13090277
申请日：2011-04-20
申请人： Vassil Antonov , Vishwanath Bhat , Chris Carlson
发明人： Vassil Antonov , Vishwanath Bhat , Chris Carlson
IPC分类号： H01L29/92 , H01L21/04
CPC分类号： H01L28/75 , H01L27/10844 , H01L28/65
摘要： A method for using a metal bilayer is disclosed. First, a bottom electrode is provided. Second, a dielectric layer which is disposed on and is in direct contact with the lower electrode is provided. Then, a metal bilayer which serves as a top electrode in a capacitor is provided. The metal bilayer is disposed on and is in direct contact with the dielectric layer. The metal bilayer consists of a noble metal in direct contact with the dielectric layer and a metal nitride in direct contact with the noble metal.
摘要翻译：公开了一种使用金属双层的方法。首先，设置底部电极。第二，提供了设置在下电极上并与下电极直接接触的电介质层。然后，提供用作电容器中的顶部电极的金属双层。金属双层配置在电介质层上并与电介质层直接接触。金属双层由与电介质层直接接触的贵金属和与贵金属直接接触的金属氮化物组成。

9. 发明授权

US08107218B2 Capacitors 有权
标题翻译：电容器
公开(公告)号：US08107218B2
公开(公告)日：2012-01-31
申请号：US12476948
申请日：2009-06-02
申请人： Vassil Antonov , Vishwanath Bhat , Chris Carlson
发明人： Vassil Antonov , Vishwanath Bhat , Chris Carlson
IPC分类号： H01G4/06
CPC分类号： H01G4/1272 , H01G4/1209 , H01G4/1218 , H01G4/1227 , H01G4/1245 , H01G4/1254 , H01G4/33
摘要： Some embodiments include methods of forming capacitors. A metal oxide mixture may be formed over a first capacitor electrode. The metal oxide mixture may have a continuous concentration gradient of a second component relative to a first component. The continuous concentration gradient may correspond to a decreasing concentration of the second component as a distance from the first capacitor electrode increases. The first component may be selected from the group consisting of zirconium oxide, hafnium oxide and mixtures thereof; and the second component may be selected from the group consisting of niobium oxide, titanium oxide, strontium oxide and mixtures thereof. A second capacitor electrode may be formed over the first capacitor electrode. Some embodiments include capacitors that contain at least one metal oxide mixture having a continuous concentration gradient of the above-described second component relative to the above-described first component.
摘要翻译：一些实施例包括形成电容器的方法。可以在第一电容器电极上形成金属氧化物混合物。金属氧化物混合物可以具有相对于第一组分的第二组分的连续浓度梯度。连续浓度梯度可以对应于与第一电容器电极的距离增加时第二组分的浓度降低。第一组分可以选自氧化锆，氧化铪及其混合物; 并且第二组分可以选自氧化铌，氧化钛，氧化锶及其混合物。可以在第一电容器电极上形成第二电容器电极。一些实施方案包括相对于上述第一组分含有至少一种具有上述第二组分的连续浓度梯度的金属氧化物混合物的电容器。

10. 发明申请

US20130182367A1 METHOD FOR FORMING RUTILE TITANIUM OXIDE AND THE STACKING STRUCTURE THEREOF 有权
标题翻译：形成无定形氧化钛的方法及其堆叠结构
公开(公告)号：US20130182367A1
公开(公告)日：2013-07-18
申请号：US13348761
申请日：2012-01-12
申请人： Chun I HSIEH , Vishwanath Bhat , Jennifer Sigman , Vassil Antonov , Wei Hui Hsu
发明人： Chun I HSIEH , Vishwanath Bhat , Jennifer Sigman , Vassil Antonov , Wei Hui Hsu
IPC分类号： H01G4/30 , C30B25/02 , B32B9/00
CPC分类号： H01L28/40 , H01L23/5223 , H01L28/65 , H01L2924/0002 , Y10T428/265 , H01L2924/00
摘要： A method for forming a stacking structure, including forming a ruthenium oxide layer over a substrate; forming a praseodymium oxide layer over the ruthenium oxide layer; and forming a titanium oxide layer over the praseodymium oxide layer; wherein the titanium oxide layer has a rutile phase with the existence of the praseodymium oxide layer underneath. The oxide layers are deposited by a plurality of atomic layer deposition cycles using ruthenium precursor, praseodymium precursor, titanium precursor, and ozone.
摘要翻译：一种用于形成堆叠结构的方法，包括在衬底上形成氧化钌层; 在氧化钌层上形成氧化镨层; 以及在所述氧化镨层上形成氧化钛层; 其中所述氧化钛层具有在其下方存在氧化镨层的金红石相。通过使用钌前体，镨前体，钛前体和臭氧的多个原子层沉积循环来沉积氧化物层。

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