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1. 发明授权

US08940388B2 Insulative elements 有权
标题翻译：绝缘元素
公开(公告)号：US08940388B2
公开(公告)日：2015-01-27
申请号：US13038605
申请日：2011-03-02
申请人： Vassil Antonov , Jennifer K. Sigman , Vishwanath Bhat , Matthew N. Rocklein , Bhaskar Srinivasan , Chris Carlson
发明人： Vassil Antonov , Jennifer K. Sigman , Vishwanath Bhat , Matthew N. Rocklein , Bhaskar Srinivasan , Chris Carlson
IPC分类号： B32B7/02 , H01G4/33 , H01G4/30 , H01G4/12
CPC分类号： H01L28/40 , H01G4/1209 , H01G4/1218 , H01G4/1236 , H01G4/1254 , H01G4/1272 , H01G4/306 , H01G4/33 , H01L21/02172 , H01L21/02356 , H01L21/225 , Y10T428/2495
摘要： Methods of forming an insulative element are described, including forming a first metal oxide material having a first dielectric constant, forming a second metal oxide material having a second dielectric constant different from the first, and heating at least portions of the structure to crystallize at least a portion of at least one of the first dielectric material and the second dielectric material. Methods of forming a capacitor are described, including forming a first electrode, forming a dielectric material with a first oxide and a second oxide over the first electrode, and forming a second electrode over the dielectric material. Structures including dielectric materials are also described.
摘要翻译：描述了形成绝缘元件的方法，包括形成具有第一介电常数的第一金属氧化物材料，形成具有与第一介电常数不同的第二介电常数的第二金属氧化物材料，并加热该结构的至少部分至少结晶第一电介质材料和第二电介质材料中的至少一个的一部分。描述了形成电容器的方法，包括形成第一电极，在第一电极上形成具有第一氧化物和第二氧化物的介电材料，以及在电介质材料上形成第二电极。还描述了包括电介质材料的结构。

2. 发明授权

US08518486B2 Methods of forming and utilizing rutile-type titanium oxide 有权
标题翻译：形成和利用金红石型氧化钛的方法
公开(公告)号：US08518486B2
公开(公告)日：2013-08-27
申请号：US12778893
申请日：2010-05-12
申请人： Nik Mirin , Tsai-Yu Huang , Vishwanath Bhat , Chris Carlson , Vassil Antonov
发明人： Nik Mirin , Tsai-Yu Huang , Vishwanath Bhat , Chris Carlson , Vassil Antonov
IPC分类号： C23C16/00
CPC分类号： H01L21/02186 , C01G23/04 , C23C16/405 , C23C16/45534 , H01G4/085 , H01G4/1227 , H01G4/33 , H01L21/02233 , H01L21/02244 , H01L21/28556 , H01L21/32051 , H01L23/367 , H01L23/3735 , H01L23/3736 , H01L27/10808 , H01L27/1085 , H01L27/10852 , H01L28/40 , H01L28/60 , H01L2924/0002 , H05K1/0203 , Y10T428/24802 , Y10T428/24975 , H01L2924/00
摘要： Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.
摘要翻译：一些实施方案包括形成金红石型氧化钛的方法。可以形成单层的氮化钛。然后氮化钛单层可以在小于或等于约550℃的温度下被氧化，以将其转化为金红石型氧化钛的单层。一些实施方案包括形成具有金红石型氧化钛电介质的电容器并且具有至少一个包含氮化钛的电极的方法。一些实施方案包括含有氮化钛和金红石型氧化钛的导热叠层，并且一些实施方案包括形成这种叠层的方法。

3. 发明申请

US20120267757A1 CAPACITOR STRUCTURE WITH METAL BILAYER AND METHOD FOR USING THE SAME 有权
标题翻译：金属双层电容器结构及其使用方法
公开(公告)号：US20120267757A1
公开(公告)日：2012-10-25
申请号：US13090277
申请日：2011-04-20
申请人： Vassil Antonov , Vishwanath Bhat , Chris Carlson
发明人： Vassil Antonov , Vishwanath Bhat , Chris Carlson
IPC分类号： H01L29/92 , H01L21/04
CPC分类号： H01L28/75 , H01L27/10844 , H01L28/65
摘要： A method for using a metal bilayer is disclosed. First, a bottom electrode is provided. Second, a dielectric layer which is disposed on and is in direct contact with the lower electrode is provided. Then, a metal bilayer which serves as a top electrode in a capacitor is provided. The metal bilayer is disposed on and is in direct contact with the dielectric layer. The metal bilayer consists of a noble metal in direct contact with the dielectric layer and a metal nitride in direct contact with the noble metal.
摘要翻译：公开了一种使用金属双层的方法。首先，设置底部电极。第二，提供了设置在下电极上并与下电极直接接触的电介质层。然后，提供用作电容器中的顶部电极的金属双层。金属双层配置在电介质层上并与电介质层直接接触。金属双层由与电介质层直接接触的贵金属和与贵金属直接接触的金属氮化物组成。

4. 发明授权

US08107218B2 Capacitors 有权
标题翻译：电容器
公开(公告)号：US08107218B2
公开(公告)日：2012-01-31
申请号：US12476948
申请日：2009-06-02
申请人： Vassil Antonov , Vishwanath Bhat , Chris Carlson
发明人： Vassil Antonov , Vishwanath Bhat , Chris Carlson
IPC分类号： H01G4/06
CPC分类号： H01G4/1272 , H01G4/1209 , H01G4/1218 , H01G4/1227 , H01G4/1245 , H01G4/1254 , H01G4/33
摘要： Some embodiments include methods of forming capacitors. A metal oxide mixture may be formed over a first capacitor electrode. The metal oxide mixture may have a continuous concentration gradient of a second component relative to a first component. The continuous concentration gradient may correspond to a decreasing concentration of the second component as a distance from the first capacitor electrode increases. The first component may be selected from the group consisting of zirconium oxide, hafnium oxide and mixtures thereof; and the second component may be selected from the group consisting of niobium oxide, titanium oxide, strontium oxide and mixtures thereof. A second capacitor electrode may be formed over the first capacitor electrode. Some embodiments include capacitors that contain at least one metal oxide mixture having a continuous concentration gradient of the above-described second component relative to the above-described first component.
摘要翻译：一些实施例包括形成电容器的方法。可以在第一电容器电极上形成金属氧化物混合物。金属氧化物混合物可以具有相对于第一组分的第二组分的连续浓度梯度。连续浓度梯度可以对应于与第一电容器电极的距离增加时第二组分的浓度降低。第一组分可以选自氧化锆，氧化铪及其混合物; 并且第二组分可以选自氧化铌，氧化钛，氧化锶及其混合物。可以在第一电容器电极上形成第二电容器电极。一些实施方案包括相对于上述第一组分含有至少一种具有上述第二组分的连续浓度梯度的金属氧化物混合物的电容器。

5. 发明申请

US20110279979A1 Constructions Comprising Rutile-Type Titanium Oxide; And Methods Of Forming And Utilizing Rutile-Type Titanium Oxide 有权
标题翻译：包括金红石型氧化钛的建筑物; 和使用金红石型氧化钛的方法
公开(公告)号：US20110279979A1
公开(公告)日：2011-11-17
申请号：US12778893
申请日：2010-05-12
申请人： Nik Mirin , Tsai-Yu Huang , Vishwanath Bhat , Chris Carlson , Vassil Antonov
发明人： Nik Mirin , Tsai-Yu Huang , Vishwanath Bhat , Chris Carlson , Vassil Antonov
IPC分类号： H05K7/20 , H01L21/46 , H01G4/00 , C23C16/40 , C23C16/44
CPC分类号： H01L21/02186 , C01G23/04 , C23C16/405 , C23C16/45534 , H01G4/085 , H01G4/1227 , H01G4/33 , H01L21/02233 , H01L21/02244 , H01L21/28556 , H01L21/32051 , H01L23/367 , H01L23/3735 , H01L23/3736 , H01L27/10808 , H01L27/1085 , H01L27/10852 , H01L28/40 , H01L28/60 , H01L2924/0002 , H05K1/0203 , Y10T428/24802 , Y10T428/24975 , H01L2924/00
摘要： Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.
摘要翻译：一些实施方案包括形成金红石型氧化钛的方法。可以形成单层的氮化钛。然后氮化钛单层可以在小于或等于约550℃的温度下被氧化，以将其转化为金红石型氧化钛的单层。一些实施方案包括形成具有金红石型氧化钛电介质的电容器并且具有至少一个包含氮化钛的电极的方法。一些实施方案包括含有氮化钛和金红石型氧化钛的导热叠层，并且一些实施方案包括形成这种叠层的方法。

6. 发明申请

US20100302705A1 Capacitors, And Methods Of Forming Capacitors 有权
标题翻译：电容器和形成电容器的方法
公开(公告)号：US20100302705A1
公开(公告)日：2010-12-02
申请号：US12476948
申请日：2009-06-02
申请人： Vassil Antonov , Vishwanath Bhat , Chris Carlson
发明人： Vassil Antonov , Vishwanath Bhat , Chris Carlson
IPC分类号： H01G4/10 , B05D5/12
CPC分类号： H01G4/1272 , H01G4/1209 , H01G4/1218 , H01G4/1227 , H01G4/1245 , H01G4/1254 , H01G4/33
摘要： Some embodiments include methods of forming capacitors. A metal oxide mixture may be formed over a first capacitor electrode. The metal oxide mixture may have a continuous concentration gradient of a second component relative to a first component. The continuous concentration gradient may correspond to a decreasing concentration of the second component as a distance from the first capacitor electrode increases. The first component may be selected from the group consisting of zirconium oxide, hafnium oxide and mixtures thereof; and the second component may be selected from the group consisting of niobium oxide, titanium oxide, strontium oxide and mixtures thereof. A second capacitor electrode may be formed over the first capacitor electrode. Some embodiments include capacitors that contain at least one metal oxide mixture having a continuous concentration gradient of the above-described second component relative to the above-described first component.
摘要翻译：一些实施例包括形成电容器的方法。可以在第一电容器电极上形成金属氧化物混合物。金属氧化物混合物可以具有相对于第一组分的第二组分的连续浓度梯度。连续浓度梯度可以对应于与第一电容器电极的距离增加时第二组分的浓度降低。第一组分可以选自氧化锆，氧化铪及其混合物; 并且第二组分可以选自氧化铌，氧化钛，氧化锶及其混合物。可以在第一电容器电极上形成第二电容器电极。一些实施方案包括相对于上述第一组分含有至少一种具有上述第二组分的连续浓度梯度的金属氧化物混合物的电容器。

7. 发明授权

US08609553B2 Methods of forming rutile titanium dioxide and associated methods of forming semiconductor structures 有权
标题翻译：形成金红石型二氧化钛的方法和形成半导体结构的相关方法
公开(公告)号：US08609553B2
公开(公告)日：2013-12-17
申请号：US13021895
申请日：2011-02-07
申请人： Tsai-Yu Huang , Vishwanath Bhat , Vassil Antonov , Chris Carlson
发明人： Tsai-Yu Huang , Vishwanath Bhat , Vassil Antonov , Chris Carlson
IPC分类号： H01L21/31
CPC分类号： H01L27/108 , H01L21/02186 , H01L21/0228 , H01L21/02304 , H01L21/321 , H01L28/40
摘要： Methods of forming rutile titanium dioxide. The method comprises exposing a transition metal (such as V, Cr, W, Mn, Ru, Os, Rh, Ir, Pt, Ge, Sn, or Pb) to oxygen gas (O2) to oxidize the transition metal. Rutile titanium dioxide is formed over the oxidized transition metal. The rutile titanium dioxide is formed by atomic layer deposition by introducing a gaseous titanium halide precursor and water to the oxidized transition metal. Methods of forming semiconductor structures having rutile titanium dioxide are also disclosed.
摘要翻译：形成金红石二氧化钛的方法。该方法包括将过渡金属（例如V，Cr，W，Mn，Ru，Os，Rh，Ir，Pt，Ge，Sn或Pb）暴露于氧气（O 2）以氧化过渡金属。在氧化过渡金属上形成金红石二氧化钛。金红石型二氧化钛是通过将氧化钛前体和水引入到氧化过渡金属中而通过原子层沉积形成的。还公开了形成具有金红石型二氧化钛的半导体结构的方法。

8. 发明申请

US20120202356A1 METHODS OF FORMING RUTILE TITANIUM DIOXIDE AND ASSOCIATED METHODS OF FORMING SEMICONDUCTOR STRUCTURES 有权
标题翻译：形成二氧化钛的方法和形成半导体结构的相关方法
公开(公告)号：US20120202356A1
公开(公告)日：2012-08-09
申请号：US13021895
申请日：2011-02-07
申请人： Tsai-Yu Huang , Vishwanath Bhat , Vassil Antonov , Chris Carlson
发明人： Tsai-Yu Huang , Vishwanath Bhat , Vassil Antonov , Chris Carlson
IPC分类号： H01L21/31 , C01G23/07
CPC分类号： H01L27/108 , H01L21/02186 , H01L21/0228 , H01L21/02304 , H01L21/321 , H01L28/40
摘要： Methods of forming rutile titanium dioxide. The method comprises exposing a transition metal (such as V, Cr, W, Mn, Ru, Os, Rh, Ir, Pt, Ge, Sn, or Pb) to oxygen gas (O2) to oxidize the transition metal. Rutile titanium dioxide is formed over the oxidized transition metal. The rutile titanium dioxide is formed by atomic layer deposition by introducing a gaseous titanium halide precursor and water to the oxidized transition metal. Methods of forming semiconductor structures having rutile titanium dioxide are also disclosed.
摘要翻译：形成金红石二氧化钛的方法。该方法包括将过渡金属（例如V，Cr，W，Mn，Ru，Os，Rh，Ir，Pt，Ge，Sn或Pb）暴露于氧气（O 2）以氧化过渡金属。在氧化过渡金属上形成金红石二氧化钛。金红石型二氧化钛是通过将氧化钛前体和水引入到氧化过渡金属中而通过原子层沉积形成的。还公开了形成具有金红石型二氧化钛的半导体结构的方法。

9. 发明申请

US20120100283A1 Methods of Forming Capacitors 有权
标题翻译：形成电容器的方法
公开(公告)号：US20120100283A1
公开(公告)日：2012-04-26
申请号：US13339692
申请日：2011-12-29
申请人： Vassil Antonov , Vishwanath Bhat , Chris Carlson
发明人： Vassil Antonov , Vishwanath Bhat , Chris Carlson
IPC分类号： B05D5/12
CPC分类号： H01G4/1272 , H01G4/1209 , H01G4/1218 , H01G4/1227 , H01G4/1245 , H01G4/1254 , H01G4/33
摘要： Some embodiments include methods of forming capacitors. A metal oxide mixture may be formed over a first capacitor electrode. The metal oxide mixture may have a continuous concentration gradient of a second component relative to a first component. The continuous concentration gradient may correspond to a decreasing concentration of the second component as a distance from the first capacitor electrode increases. The first component may be selected from the group consisting of zirconium oxide, hafnium oxide and mixtures thereof; and the second component may be selected from the group consisting of niobium oxide, titanium oxide, strontium oxide and mixtures thereof. A second capacitor electrode may be formed over the first capacitor electrode. Some embodiments include capacitors that contain at least one metal oxide mixture having a continuous concentration gradient of the above-described second component relative to the above-described first component.
摘要翻译：一些实施例包括形成电容器的方法。可以在第一电容器电极上形成金属氧化物混合物。金属氧化物混合物可以具有相对于第一组分的第二组分的连续浓度梯度。连续浓度梯度可以对应于与第一电容器电极的距离增加时第二组分的浓度降低。第一组分可以选自氧化锆，氧化铪及其混合物; 并且第二组分可以选自氧化铌，氧化钛，氧化锶及其混合物。可以在第一电容器电极上形成第二电容器电极。一些实施方案包括相对于上述第一组分含有至少一种具有上述第二组分的连续浓度梯度的金属氧化物混合物的电容器。

10. 发明授权

US08841747B2 Capacitor structure with metal bilayer and method for using the same 有权
标题翻译：金属双层电容结构及其使用方法
公开(公告)号：US08841747B2
公开(公告)日：2014-09-23
申请号：US13090277
申请日：2011-04-20
申请人： Vassil Antonov , Vishwanath Bhat , Chris Carlson
发明人： Vassil Antonov , Vishwanath Bhat , Chris Carlson
IPC分类号： H01L21/02 , H01L49/02
CPC分类号： H01L28/75 , H01L27/10844 , H01L28/65
摘要： A method for using a metal bilayer is disclosed. First, a bottom electrode is provided. Second, a dielectric layer which is disposed on and is in direct contact with the lower electrode is provided. Then, a metal bilayer which serves as a top electrode in a capacitor is provided. The metal bilayer is disposed on and is in direct contact with the dielectric layer. The metal bilayer consists of a noble metal in direct contact with the dielectric layer and a metal nitride in direct contact with the noble metal.
摘要翻译：公开了一种使用金属双层的方法。首先，设置底部电极。第二，提供了设置在下电极上并与下电极直接接触的电介质层。然后，提供用作电容器中的顶部电极的金属双层。金属双层配置在电介质层上并与电介质层直接接触。金属双层由与电介质层直接接触的贵金属和与贵金属直接接触的金属氮化物组成。

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