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1. 发明授权

US09953849B2 Platen for reducing particle contamination on a substrate and a method thereof 有权
公开(公告)号：US09953849B2
公开(公告)日：2018-04-24
申请号：US14224879
申请日：2014-03-25
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： David E. Suuronen , Dale K. Stone , Shigeo Oshiro , Arthur P. Riaf , Edward D. MacIntosh
IPC分类号： H01L21/67 , H01L21/687
CPC分类号： H01L21/67109 , H01L21/6875
摘要： Techniques for reducing particle contamination on a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a platen having different regions, where the pressure levels in the regions may be substantially equal. For example, the platen may comprise a platen body comprising first and second recesses, the first recess defining a fluid region for holding fluid for maintaining a temperature of the substrate at a desired temperature, the second recess defining a first cavity for holding a ground circuit; a first via defined in the platen body, the first via having first and second openings, the first opening proximate to the fluid region and the second opening proximate to the first cavity, wherein pressure level of the fluid region may be maintained at a level that is substantially equal to pressure level of the first cavity.

2. 发明授权

US10541137B2 Method and apparatus for non line-of-sight doping 有权
公开(公告)号：US10541137B2
公开(公告)日：2020-01-21
申请号：US15996032
申请日：2018-06-01
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Christopher R. Hatem , Piero Sferlazzo , Roger Fish , Dale K. Stone
IPC分类号： H01L21/22 , H01L21/263 , H01L21/8234
摘要： A method of doping a substrate. The method may include providing a substrate in a process chamber. The substrate may include a semiconductor structure, and a dopant layer disposed on a surface of the semiconductor structure. The method may include maintaining the substrate at a first temperature for a first interval, the first temperature corresponding to a vaporization temperature of the dopant layer. The method may further include rapidly cooling the substrate to a second temperature, less than the first temperature, and heating the substrate from the second temperature to a third temperature, greater than the first temperature.

3. 发明申请

US20190371608A1 METHOD AND APPARATUS FOR NON LINE-OF-SIGHT DOPING 审中-公开
公开(公告)号：US20190371608A1
公开(公告)日：2019-12-05
申请号：US15996032
申请日：2018-06-01
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Christopher R. Hatem , Piero Sferlazzo , Roger Fish , Dale K. Stone
IPC分类号： H01L21/22 , H01L21/8234 , H01L21/263
摘要： A method of doping a substrate. The method may include providing a substrate in a process chamber. The substrate may include a semiconductor structure, and a dopant layer disposed on a surface of the semiconductor structure. The method may include maintaining the substrate at a first temperature for a first interval, the first temperature corresponding to a vaporization temperature of the dopant layer. The method may further include rapidly cooling the substrate to a second temperature, less than the first temperature, and heating the substrate from the second temperature to a third temperature, greater than the first temperature.

4. 发明申请

US20190252230A1 PLASMA RESISTANT ELECTROSTATIC CLAMP 审中-公开
公开(公告)号：US20190252230A1
公开(公告)日：2019-08-15
申请号：US16397324
申请日：2019-04-29
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Dale K. Stone , Julian G. Blake , Lyudmila Stone
IPC分类号： H01L21/683 , H01J37/32 , H01L21/67
CPC分类号： H01L21/6831 , H01J37/32715 , H01L21/67109
摘要： An apparatus to support a substrate may include a base and an insulator portion adjacent to the base and configured to support a surface of the substrate. The apparatus may also include an electrode system to apply a clamping voltage to the substrate, wherein the insulator portion is configured to provide a gas to the substrate through at least one channel that has a channel width, wherein a product of the gas pressure and channel width is less than a Paschen minimum for the gas, where the Paschen minimum is a product of pressure and separation of surfaces of an enclosure at which a breakdown voltage of the gas is a minimum.

5. 发明申请

US20140318455A1 LOW EMISSIVITY ELECTROSTATIC CHUCK 审中-公开
标题翻译：低电感静电卡盘
公开(公告)号：US20140318455A1
公开(公告)日：2014-10-30
申请号：US13871273
申请日：2013-04-26
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： Julian G. Blake , Dale K. Stone , Lyudmila Stone , Michael Schrameyer
IPC分类号： H01L21/683
CPC分类号： H01L21/6831
摘要： An electrostatic chuck includes a heater and an electrode disposed on the heater. The electrostatic chuck also includes an insulator layer and coating disposed on the insulator, where the coating is configured to support an electrostatic field generated by the electrode system to attract a substrate thereto.
摘要翻译：静电卡盘包括加热器和设置在加热器上的电极。静电卡盘还包括设置在绝缘体上的绝缘体层和涂层，其中涂层被配置为支撑由电极系统产生的静电场以吸引衬底。

6. 发明授权

US10658207B2 Platen for reducing particle contamination on a substrate and a method thereof 有权
公开(公告)号：US10658207B2
公开(公告)日：2020-05-19
申请号：US15954163
申请日：2018-04-16
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： David E. Suuronen , Dale K. Stone , Shigeo Oshiro , Arthur P. Riaf , Edward D. MacIntosh
IPC分类号： H01L21/67 , H01L21/687
摘要： Techniques for reducing particle contamination on a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a platen having different regions, where the pressure levels in the regions may be substantially equal. For example, the platen may comprise a platen body comprising first and second recesses, the first recess defining a fluid region for holding fluid for maintaining a temperature of the substrate at a desired temperature, the second recess defining a first cavity for holding a ground circuit; a first via defined in the platen body, the first via having first and second openings, the first opening proximate to the fluid region and the second opening proximate to the first cavity, wherein pressure level of the fluid region may be maintained at a level that is substantially equal to pressure level of the first cavity.

7. 发明授权

US10157764B2 Thermal shield for electrostatic chuck 有权
公开(公告)号：US10157764B2
公开(公告)日：2018-12-18
申请号：US15174160
申请日：2016-06-06
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Dale K. Stone , David J. Chipman
IPC分类号： H01L21/683 , H02N13/00 , H01L21/67 , G03F7/20
摘要： A thermal shield is disclosed that may be disposed between a heated electrostatic chuck and a base. The thermal shield comprises a thermal insulator, such as a polyimide film, having a thickness of between 1 and 5 mils. The polyimide film is coated on one side with a layer of reflective material, such as aluminum. The layer of reflective material may be between 30 and 100 nanometers. The thermal shield is disposed such that the layer of reflective material is closer to the chuck. Because of the thinness of the layer of reflective material, the thermal shield does not retain a significant amount of heat. Further, the temperature of the thermal shield remains far below the glass transition temperature of the polyimide film.

8. 发明申请

US20160268150A1 Apparatus For Improving Temperature Uniformity Of A Workpiece 有权
标题翻译：用于提高工件温度均匀性的装置
公开(公告)号：US20160268150A1
公开(公告)日：2016-09-15
申请号：US14657193
申请日：2015-03-13
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Dawei Sun , D. Jeffrey Lischer , Steven M. Anella , Dale K. Stone , Lyudmila Stone
IPC分类号： H01L21/67
CPC分类号： H01L21/67103
摘要： An apparatus for improving the temperature uniformity of a workpiece during processing is disclosed. The apparatus includes a platen having a separately controlled edge heater capable to independently heating the outer edge of the platen. In this way, additional heat may be supplied near the outer edge of the platen, helping to maintain a constant temperature across the entirety of the platen. This edge heater may be disposed on an outer surface of the platen, or may, in certain embodiments, be embedded in the platen. In certain embodiments, the edge heater and the primary heating element are disposed in two different planes, where the edge heater is disposed closer to the top surface of the platen than the primary heating element.
摘要翻译：公开了一种用于在加工期间改善工件的温度均匀性的装置。该装置包括具有独立控制的边缘加热器的压板，其能够独立地加热压板的外边缘。以这种方式，可以在压板的外边缘附近提供额外的热量，有助于在整个压板上保持恒定的温度。该边缘加热器可以设置在压板的外表面上，或者在某些实施例中可以嵌入在压板中。在某些实施例中，边缘加热器和主加热元件设置在两个不同的平面中，其中边缘加热器被设置成比主加热元件更靠近压板的上表面。

9. 发明申请

US20160379861A1 Thermal Shield For Electrostatic Chuck 审中-公开
标题翻译：静电卡盘热屏蔽
公开(公告)号：US20160379861A1
公开(公告)日：2016-12-29
申请号：US15174160
申请日：2016-06-06
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Dale K. Stone , David J. Chipman
IPC分类号： H01L21/683 , H05K7/20 , H02N13/00
CPC分类号： H01L21/6833 , G03F7/70708 , H01L21/67103 , H01L21/6831 , H02N13/00
摘要： A thermal shield is disclosed that may be disposed between a heated electrostatic chuck and a base. The thermal shield comprises a thermal insulator, such as a polyimide film, having a thickness of between 1 and 5 mils. The polyimide film is coated on one side with a layer of reflective material, such as aluminum. The layer of reflective material may be between 30 and 100 nanometers. The thermal shield is disposed such that the layer of reflective material is closer to the chuck. Because of the thinness of the layer of reflective material, the thermal shield does not retain a significant amount of heat. Further, the temperature of the thermal shield remains far below the glass transition temperature of the polyimide film.
摘要翻译：公开了可以设置在加热的静电卡盘和基座之间的热屏蔽。热屏蔽包括厚度为1至5密耳之间的绝热体，例如聚酰亚胺膜。聚酰亚胺膜在一面上涂覆有诸如铝的反射材料层。反射材料层可以在30和100纳米之间。热屏蔽被设置成使得反射材料层更靠近卡盘。由于反射材料层的薄度，热屏蔽层不会保留大量的热量。此外，热屏蔽层的温度远低于聚酰亚胺膜的玻璃化转变温度。

10. 发明申请

US20150279704A1 Platen For Reducing Particle Contamination On A Substrate And A Method Thereof 审中-公开
标题翻译：用于减少基体上的颗粒污染的压板及其方法
公开(公告)号：US20150279704A1
公开(公告)日：2015-10-01
申请号：US14224879
申请日：2014-03-25
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： David E. Suuronen , Dale K. Stone , Shigeo Oshiro , Arthur P. Riaf , Edward D. MacIntosh
IPC分类号： H01L21/67 , H01L21/687
CPC分类号： H01L21/67109 , H01L21/6875
摘要： Techniques for reducing particle contamination on a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a platen having different regions, where the pressure levels in the regions may be substantially equal. For example, the platen may comprise a platen body comprising first and second recesses, the first recess defining a fluid region for holding fluid for maintaining a temperature of the substrate at a desired temperature, the second recess defining a first cavity for holding a ground circuit; a first via defined in the platen body, the first via having first and second openings, the first opening proximate to the fluid region and the second opening proximate to the first cavity, wherein pressure level of the fluid region may be maintained at a level that is substantially equal to pressure level of the first cavity.
摘要翻译：公开了用于减少衬底上的颗粒污染的技术。在一个特定的示例性实施例中，该技术可以利用具有不同区域的压板来实现，其中区域中的压力水平可以基本相等。例如，压盘可以包括压板本体，该压板本体包括第一和第二凹槽，第一凹槽限定用于保持流体的流体区域，以将衬底的温度保持在期望温度，第二凹槽限定用于保持接地电路的第一腔体 ; 第一通孔限定在压板本体中，第一通孔具有第一和第二开口，第一开口靠近流体区域，第二开口接近第一腔体，其中流体区域的压力水平可以保持在基本上等于第一腔的压力水平。

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