专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09105628B1 Through substrate via (TSuV) structures and method of making the same 有权
标题翻译：通过衬底通孔（TSuV）结构及其制作方法
公开(公告)号：US09105628B1
公开(公告)日：2015-08-11
申请号：US13434688
申请日：2012-03-29
申请人： Valery Dubin
发明人： Valery Dubin
IPC分类号： H01L23/498 , H01L21/48 , H01L21/768 , H01L23/538
CPC分类号： H01L23/49827 , B81B7/007 , B81B2207/096 , H01L21/486 , H01L21/76831 , H01L21/76879 , H01L21/76898 , H01L23/481 , H01L23/5384 , H01L2224/02372 , H01L2224/05009 , H01L2224/05025 , H01L2224/0557 , H01L2224/05571 , H01L2224/08146 , H01L2224/08165 , H01L2224/08235 , H01L2224/13 , H01L2224/13009 , H01L2224/13025 , H01L2224/16146 , H01L2225/06541 , H01L2225/06544 , H01L2225/06548 , H01L2924/1461 , H01L2924/00
摘要： Through substrate via (TSuV) structures and method of making the same are disclosed herein. In embodiments, TSuV structures are metal filled selectively to avoid forming significant metal overburden on non-via surfaces of the substrate. In certain embodiments, post-fill metal removal/planarization operations are eliminated for reduced process complexity and manufacturing cost. In embodiments, selective metal fill entails selective electroless or electrolytic deposition. Both front side and back side selective deposition methods are described along with features of through substrate via structures made with such methods.
摘要翻译：通过衬底通孔（TSuV）结构及其制备方法在此公开。在实施例中，TSuV结构被选择性地金属填充以避免在衬底的非通孔表面上形成显着的金属覆盖层。在某些实施例中，消除后填充金属去除/平面化操作以降低工艺复杂性和制造成本。在实施例中，选择性金属填充需要选择性化学镀或电解沉积。还描述了前侧和后侧选择性沉积方法以及通过这种方法制成的通过基底通孔结构的特征。

2. 发明申请

US20140231986A1 THROUGH SUBSTRATE VIA (TSUV) STRUCTURES AND METHOD OF MAKING THE SAME 审中-公开
标题翻译：通过（TSUV）结构的基板及其制造方法
公开(公告)号：US20140231986A1
公开(公告)日：2014-08-21
申请号：US14260064
申请日：2014-04-23
申请人： Valery Dubin
发明人： Valery Dubin
IPC分类号： B81B7/00 , H01L23/498
CPC分类号： H01L23/49827 , B81B7/007 , B81B2207/096 , H01L21/486 , H01L21/76831 , H01L21/76879 , H01L21/76898 , H01L23/481 , H01L23/5384 , H01L2224/02372 , H01L2224/05009 , H01L2224/05025 , H01L2224/0557 , H01L2224/05571 , H01L2224/08146 , H01L2224/08165 , H01L2224/08235 , H01L2224/13 , H01L2224/13009 , H01L2224/13025 , H01L2224/16146 , H01L2225/06541 , H01L2225/06544 , H01L2225/06548 , H01L2924/1461 , H01L2924/00
摘要： Through substrate via (TSuV) structures and method of making the same are disclosed herein. In embodiments, TSuV structures are metal filled selectively to avoid forming significant metal overburden on non-via surfaces of the substrate. In certain embodiments, post-fill metal removal/planarization operations are eliminated for reduced process complexity and manufacturing cost. In embodiments, selective metal fill entails selective electroless or electrolytic deposition. Both front side and back side selective deposition methods are described along with features of through substrate via structures made with such methods.
摘要翻译：通过衬底通孔（TSuV）结构及其制备方法在此公开。在实施例中，TSuV结构被选择性地金属填充以避免在衬底的非通孔表面上形成显着的金属覆盖层。在某些实施例中，消除后填充金属去除/平面化操作以降低工艺复杂性和制造成本。在实施例中，选择性金属填充需要选择性化学镀或电解沉积。还描述了前侧和后侧选择性沉积方法以及通过这种方法制成的通过基底通孔结构的特征。

3. 发明申请

US20070298608A1 Forming a copper diffusion barrier 有权
公开(公告)号：US20070298608A1
公开(公告)日：2007-12-27
申请号：US11897862
申请日：2007-08-31
申请人： Steven Johnston , Valery Dubin , Michael McSwiney , Peter Moon
发明人： Steven Johnston , Valery Dubin , Michael McSwiney , Peter Moon
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/28562 , H01L21/288 , H01L21/76849 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Noble metal may be used as a non-oxidizing diffusion barrier to prevent diffusion from copper lines. A diffusion barrier may be formed of a noble metal formed over an adhesion promoting layer or by a noble metal cap over an oxidizable diffusion barrier. The copper lines may also be covered with a noble metal.

4. 发明申请

US20070267297A1 Electroplating Chemistries and Methods of Forming Interconnections 有权
标题翻译：电镀化学和形成相互连接的方法
公开(公告)号：US20070267297A1
公开(公告)日：2007-11-22
申请号：US11383925
申请日：2006-05-17
申请人： Rohan Akolkar , Valery Dubin
发明人： Rohan Akolkar , Valery Dubin
IPC分类号： C25D5/02
CPC分类号： C25D3/38 , H01L21/2885 , H01L21/76879
摘要： A method comprising forming an interconnection opening through a dielectric material to a contact point; and electroplating a interconnection comprising copper in the contact opening using an electroplating bath comprising an alkoxylated sulfopropylated alkylamine. A method comprising forming an interconnection opening through a dielectric material to a contact point; lining the interconnection opening with a barrier layer and a seed layer; and electroplating an interconnection comprising copper in the contact opening using an electroplating bath comprising an alkoxylated sulfopropylated alkylamine.
摘要翻译：一种方法，包括通过介电材料形成到接触点的互连开口; 以及使用包含烷氧基化磺丙基化烷基胺的电镀浴在接触开口中电镀包含铜的互连。一种方法，包括通过介电材料形成到接触点的互连开口; 用隔离层和种子层对互连开口进行衬里; 以及使用包含烷氧基化磺丙基化烷基胺的电镀浴在接触开口中电镀包含铜的互连。

5. 发明申请

US20060131750A1 Protection of seedlayer for electroplating 失效
公开(公告)号：US20060131750A1
公开(公告)日：2006-06-22
申请号：US11336169
申请日：2006-01-19
申请人： Valery Dubin , Peter Moon
发明人： Valery Dubin , Peter Moon
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L21/76843 , H01L21/2885 , H01L21/76873 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The present invention includes a method of providing a substrate; sequentially forming a seed layer over the substrate and forming a protection layer over the seed layer; and sequentially removing the protection layer and forming a conductor over the seed layer. The present invention further includes a structure having a substrate, the substrate having a device; an insulator disposed over the substrate, the insulator having an opening, the opening disposed over the device; a barrier layer disposed over the opening; a seed layer disposed over the barrier layer; and a protection layer disposed over the seed layer.

6. 发明申请

US20060063382A1 Method to fabricate copper-cobalt interconnects 审中-公开
标题翻译：制造铜钴互连的方法
公开(公告)号：US20060063382A1
公开(公告)日：2006-03-23
申请号：US10943610
申请日：2004-09-17
申请人： Valery Dubin , Chin-Chang Cheng , Shaestagir Chowdhury
发明人： Valery Dubin , Chin-Chang Cheng , Shaestagir Chowdhury
IPC分类号： H01L21/302
CPC分类号： H01L21/288 , C23C18/166 , C23C18/1676 , C23C18/1827 , C23C18/31 , H01L21/76849
摘要： A method to form copper-cobalt interconnects comprises rinsing a copper substrate with deionized water, heating a mild etchant solution and rinsing the copper substrate with the heated mild etchant solution, heating an electroless plating solution and rinsing the copper substrate with a portion of the heated electroless plating solution, heating a reducing agent solution and mixing another portion of the heated electroless plating solution with the heated reducing agent solution to form a self-catalytic bath, and applying the self-catalytic bath to the copper substrate. The electroless plating solution may contain cobalt ions. The method may further include rinsing the copper substrate with deionized water and a hydrofluoric acid solution after the application of the self-catalytic bath.
摘要翻译：形成铜 - 钴互连的方法包括用去离子水漂洗铜基底，加热温和的蚀刻剂溶液并用加热的温和的蚀刻剂溶液冲洗铜基底，加热无电镀溶液并用一部分加热的化学镀溶液，加热还原剂溶液并将加热的化学镀溶液的另一部分与加热的还原剂溶液混合以形成自催化浴，并将自催化浴施加到铜基底上。化学镀溶液可以含有钴离子。该方法可以进一步包括在施加自催化浴后用去离子水和氢氟酸溶液冲洗铜基底。

7. 发明授权

US06933171B2 Large bumps for optical flip chips 有权
公开(公告)号：US06933171B2
公开(公告)日：2005-08-23
申请号：US10691136
申请日：2003-10-21
申请人： Ming Fang , Valery Dubin , Daoqiang Lu
发明人： Ming Fang , Valery Dubin , Daoqiang Lu
IPC分类号： G02B6/42 , H01L21/00 , H01L21/44 , H01L21/48 , H01L21/50 , H01L21/60 , H01L23/48 , H01L23/485 , H01L23/52 , H01L27/15 , H01L29/267 , H01L31/12 , H01L33/00
CPC分类号： H01L24/16 , G02B6/4204 , G02B6/4232 , H01L24/11 , H01L24/81 , H01L2224/1134 , H01L2224/1147 , H01L2224/13099 , H01L2224/13144 , H01L2224/16 , H01L2224/81193 , H01L2224/8121 , H01L2224/81815 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/14 , H01L2924/15151 , H01L2924/19041 , H01L2924/19043 , H01L2924/00014 , H01L2924/00015 , H01L2224/29099
摘要： The invention provides bumps between a die and a substrate with a height greater than or equal to a height of a waveguide between the die and the substrate. The bumps may be formed on a die prior to that die being singulated from a wafer.

8. 发明申请

US20050090098A1 Method for making a semiconductor device having increased conductive material reliability 有权
标题翻译：制造具有增加的导电材料可靠性的半导体器件的方法
公开(公告)号：US20050090098A1
公开(公告)日：2005-04-28
申请号：US10695249
申请日：2003-10-27
申请人： Valery Dubin , Ramanan Chebiam
发明人： Valery Dubin , Ramanan Chebiam
IPC分类号： H01L21/768 , H01L23/532 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/76849 , H01L21/76867 , H01L21/76886 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for a semiconductor device having a semiconductor device having increased conductive material reliability is described. That method and apparatus comprises forming a conductive path on a substrate. The conductive path made of a first material. A second material is then deposited on the conductive path. Once the second material is deposited on the conductive path, the diffusion of the second material into the conductive path is facilitated. The second material has a predetermined solubility to substantially diffuse to grain boundaries within the first material.
摘要翻译：描述了具有导电材料可靠性增加的半导体器件的半导体器件的方法和装置。该方法和装置包括在衬底上形成导电路径。由第一材料制成的导电路径。然后将第二材料沉积在导电路径上。一旦第二材料沉积在导电路径上，则促进了第二材料进入导电路径的扩散。第二材料具有预定的溶解度以基本上扩散到第一材料内的晶界。

9. 发明申请

US20050077181A1 Modified electroplating solution components in a low-acid electrolyte solution 有权
标题翻译：改性电镀溶液成分在低酸电解液中
公开(公告)号：US20050077181A1
公开(公告)日：2005-04-14
申请号：US10682276
申请日：2003-10-08
申请人： Daniel Zierath , Vinay Chikarmane , Valery Dubin
发明人： Daniel Zierath , Vinay Chikarmane , Valery Dubin
IPC分类号： C25D21/12
CPC分类号： C25D21/12
摘要： An embodiment of the invention provides a method for reducing within die thickness variations by modifying the concentration of components of a low-acid electroplating solution. For one embodiment, the leveler concentration is increased sufficiently to reduce within die thickness variations to a specified value. For one embodiment of the invention, the leveler and suppressor are increased to reduce within die thickness variations and substantially reduce a plurality of electroplating defects. In such an embodiment the combined concentration of leveler and suppressor is determined to maintain adequate gap fill.
摘要翻译：本发明的一个实施方案提供了一种通过改变低酸性电镀溶液的组分浓度来减小模内厚度变化的方法。对于一个实施例，调平器浓度被充分增加以将模具厚度变化减小到指定值。对于本发明的一个实施例，矫直机和抑制器增加以减小模内厚度变化并且基本上减少多个电镀缺陷。在这样的实施例中，确定矫直机和抑制器的组合浓度以保持足够的间隙填充。

10. 发明申请

US20050062034A1 Nanotubes for integrated circuits 失效
标题翻译：集成电路用纳米管
公开(公告)号：US20050062034A1
公开(公告)日：2005-03-24
申请号：US10671322
申请日：2003-09-24
申请人： Valery Dubin
发明人： Valery Dubin
IPC分类号： H01L51/30 , H01L29/06
CPC分类号： H01L51/0048 , B82Y10/00 , Y10S977/742
摘要： One or more semiconducting or conducting regions of a device such as a transistor may comprise molecular materials such as nanotubes or similar materials. Regions of a conductive alignment pattern used to align the nanotubes may be proximate to one or more ends of the nanotube. Additionally, a contact region may be proximate to each end of the nanotube to provide electrical contact to the nanotube. Nanotubes or the like may be in communication with device interconnection regions on a device substrate and may further be in communication with a package connection region on a package substrate.
摘要翻译：诸如晶体管的器件的一个或多个半导体或导电区域可以包括分子材料，例如纳米管或类似材料。用于对准纳米管的导电对准图案的区域可以靠近纳米管的一个或多个端部。另外，接触区域可以靠近纳米管的每个端部以提供与纳米管的电接触。纳米管等可以与器件衬底上的器件互连区域连通，并且还可以与封装衬底上的封装连接区域连通。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式