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1. 发明申请

US20070246442A1 CHEMICAL OXIDE REMOVAL OF PLASMA DAMAGED SICOH LOW K DIELECTRICS 有权
标题翻译：化学氧化物去除等离子体损耗的SICOH低K电介质
公开(公告)号：US20070246442A1
公开(公告)日：2007-10-25
申请号：US11308672
申请日：2006-04-20
申请人： William America , Steven Johnston , Brian Messenger
发明人： William America , Steven Johnston , Brian Messenger
IPC分类号： C03C25/68 , C03C15/00
CPC分类号： H01L21/312 , H01L21/02063 , H01L21/02126 , H01L21/31633 , H01L21/76814
摘要： A method for removing damages of a dual damascene structure after plasma etching is disclosed. The method comprises the use of sublimation processes to deposit reactive material onto the damaged regions and conditions to achieve a controlled removal of the damaged region. Furthermore a semiconductor structure comprising a dual damascene structure that has been treated by the method is disclosed.
摘要翻译：公开了一种在等离子体蚀刻之后去除双镶嵌结构的损坏的方法。该方法包括使用升华过程将反应性材料沉积在受损区域上并实现对受损区域的控制去除的条件。此外，公开了一种包括已经通过该方法处理的双镶嵌结构的半导体结构。

2. 发明授权

US07220671B2 Organometallic precursors for the chemical phase deposition of metal films in interconnect applications 有权
标题翻译：用于金属膜在互连应用中的化学相沉积的有机金属前体
公开(公告)号：US07220671B2
公开(公告)日：2007-05-22
申请号：US11096860
申请日：2005-03-31
申请人： Harsono Simka , Juan Dominguez , Steven Johnston , Adrien Lavoie , Kevin O'Brien
发明人： Harsono Simka , Juan Dominguez , Steven Johnston , Adrien Lavoie , Kevin O'Brien
IPC分类号： H01L21/44
CPC分类号： H01L21/28556 , C23C16/18 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76856 , H01L21/76858 , H01L21/76862 , H01L21/76864 , H01L21/76871 , H01L21/76873
摘要： Chemical phase deposition processes utilizing organometallic precursors to form thin films are herein described. The organometallic precursors may include a single metal center or multiple metal centers. The chemical phase deposition may be chemical vapor deposition (CVD), atomic layer deposition (ALD), or hybrid CVD and ALD. The use of these chemical phase deposition processes with the organometallic precursors allows for the conformal deposition of films within openings having widths of less than 100 nm and more particularly less than 50 nm to form thin films such as barrier layers, seed layers, and adhesion layers.
摘要翻译：在此描述利用有机金属前体形成薄膜的化学相沉积方法。有机金属前体可以包括单个金属中心或多个金属中心。化学相沉积可以是化学气相沉积（CVD），原子层沉积（ALD）或混合CVD和ALD。这些化学相沉积方法与有机金属前体的使用允许膜在宽度小于100nm，更特别地小于50nm的开口内的共形沉积，以形成薄膜，例如阻挡层，种子层和粘附层。

3. 发明申请

US20070075427A1 Amine-free deposition of metal-nitride films 有权
标题翻译：无氮化物沉积金属氮化物膜
公开(公告)号：US20070075427A1
公开(公告)日：2007-04-05
申请号：US11240005
申请日：2005-09-30
申请人： Adrien Lavoie , Valery Dubin , Juan Dominguez , Kevin O'Brien , Steven Johnston , John Peck , David Thompson , David Peters
发明人： Adrien Lavoie , Valery Dubin , Juan Dominguez , Kevin O'Brien , Steven Johnston , John Peck , David Thompson , David Peters
IPC分类号： H01L29/40 , H01L21/44
CPC分类号： H01L23/53238 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.
摘要翻译：形成金属碳化物层的方法开始于提供衬底，有机金属前体材料，至少一种掺杂剂如氮气，以及诸如氢等离子体的等离子体。将基板放置在反应室内; 并加热。然后进行处理循环，其中工艺循环包括将有机金属前体材料脉冲到反应室中，将掺杂剂脉冲到反应室中，并将等离子体脉冲到反应室中，使得有机金属前体材料，掺杂剂并且等离子体在基板表面反应形成金属碳化物层。可以重复和改变工艺循环以形成渐变的金属碳化物层。

4. 发明申请

US20060286800A1 Method for adhesion and deposition of metal films which provide a barrier and permit direct plating 审中-公开
标题翻译：金属膜的附着和沉积方法，其提供阻挡层并允许直接电镀
公开(公告)号：US20060286800A1
公开(公告)日：2006-12-21
申请号：US11154151
申请日：2005-06-15
申请人： Juan Dominguez , Michael McSwiney , Steven Johnston
发明人： Juan Dominguez , Michael McSwiney , Steven Johnston
IPC分类号： H01L21/44
CPC分类号： H01L21/76826 , H01L21/76831 , H01L21/76846
摘要： A method for fabricating a barrier layer and a barrier layer is described which employs a metal selected from the group of Ru, Ir, Pd, Pt, Rh, Os, Au, Ag, W, Ta and Ti. A graded region is formed to cause the metal to adhere to an underlying substrate. Direct plating is enabled without a seed layer.
摘要翻译：描述了制造阻挡层和阻挡层的方法，其使用选自Ru，Ir，Pd，Pt，Rh，Os，Au，Ag，W，Ta和Ti中的金属。形成渐变区域以使金属粘附到下面的基底上。没有种子层就能实现直接电镀。

5. 发明申请

US20060220249A1 Nobel metal barrier and seed layer for semiconductors 有权
标题翻译：诺贝尔金属屏障和半导体种子层
公开(公告)号：US20060220249A1
公开(公告)日：2006-10-05
申请号：US11096345
申请日：2005-03-31
申请人： Steven Johnston , Juan Dominguez , Michael McSwiney
发明人： Steven Johnston , Juan Dominguez , Michael McSwiney
IPC分类号： H01L29/40 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/76846 , H01L21/7685 , H01L21/76871
摘要： A barrier and seed layer for a semiconductor damascene process is described. The seed layer is formed from a noble metal with an intermediate region to prevent oxidation of the barrier between the barrier and noble metal layers to prevent oxidation of the barrier layer.
摘要翻译：描述了用于半导体镶嵌工艺的阻挡层和籽晶层。种子层由具有中间区域的贵金属形成，以防止阻挡层和贵金属层之间的阻挡层的氧化，以防止阻挡层的氧化。

6. 发明申请

US20060057838A1 Low k ILD layer with a hydrophilic portion 有权
标题翻译：具有亲水部分的低k ILD层
公开(公告)号：US20060057838A1
公开(公告)日：2006-03-16
申请号：US10944358
申请日：2004-09-16
申请人： Steven Johnston , Nate Baxter
发明人： Steven Johnston , Nate Baxter
IPC分类号： H01L21/4763
CPC分类号： H01L21/76829 , H01L21/288 , H01L21/76849 , H01L21/76874
摘要： Embodiments of the invention provide a relatively hydrophilic layer in a low k dielectric layer. The hydrophilic layer may be formed by exposing the dielectric layer to light having enough energy to break Si—C and C—C bonds but not enough to break Si—O bonds.
摘要翻译：本发明的实施例提供了在低k电介质层中的相对亲水层。亲水层可以通过将介电层暴露于具有足够能量以破坏Si-C和C-C键但不足以破坏Si-O键的光而形成。

7. 发明申请

US20060040501A1 Integrated dual damascene RIE process with organic patterning layer 有权
标题翻译：集成双镶嵌RIE工艺与有机图案层
公开(公告)号：US20060040501A1
公开(公告)日：2006-02-23
申请号：US10921007
申请日：2004-08-17
申请人： William America , Steven Johnston
发明人： William America , Steven Johnston
IPC分类号： H01L21/302
CPC分类号： H01L21/76811 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76813
摘要： A dual damascene conductor structure is formed on a substrate with an exposed conductor on top covered by a buried cap, a dielectric layer (DL) and an organic layer (OL). Form trench patterning hard mask and via hard mask layers over the OL. Form a trench pattern hole through the via hard mask layer; and form a via pattern hole through the via hard mask layer and the trench hard mask layer. Etch the via pattern hole into the OL and then etch a via pattern hole into the DL. Etch away the trench pattern layer below the trench pattern hole. Etch away the OL layer below the trench pattern hole. Etch the via hole through the DL exposing the cap while simultaneously partially etching the DL to a final trench depth to form a trench into the DL below the trench pattern hole, with the trench having a bottom above the cap and sidewalls in the DL.
摘要翻译：双镶嵌导体结构形成在衬底上，其中暴露的导体顶部由掩埋帽，介电层（DL）和有机层（OL）覆盖。形成沟槽图案化硬掩模，并通过OL上的硬掩模层。通过通孔硬掩模层形成沟槽图案孔; 并且通过通孔硬掩模层和沟槽硬掩模层形成通孔图案孔。将通孔图案孔蚀刻到OL中，然后将通孔图案孔蚀刻到DL中。蚀刻沟槽图案孔下方的沟槽图案层。蚀刻沟槽图案孔下面的OL层。通过穿过盖的DL蚀刻通孔，同时将DL部分地蚀刻到最终的沟槽深度，以在沟槽图案孔下方的DL中形成沟槽，沟槽在盖的顶部和DL的侧壁中。

8. 发明申请

US20050284576A1 METHOD AND APPARATUS FOR TREATING WAFER EDGE REGION WITH TOROIDAL PLASMA 有权
标题翻译：用TOROIDAL PLASMA处理波浪边缘区域的方法和装置
公开(公告)号：US20050284576A1
公开(公告)日：2005-12-29
申请号：US10710226
申请日：2004-06-28
申请人： William America , Steven Johnston
发明人： William America , Steven Johnston
IPC分类号： B08B7/00 , B44C1/22 , C23F1/00 , H01J37/32 , H01L21/00
CPC分类号： H01J37/32458 , B08B7/0035 , H01J37/32009 , H01J37/32082 , H01J37/32541 , H01L21/67069
摘要： Method and apparatus for treating an edge region of a wafer. A toroidal shaped plasma cavity has an inner diameter which is slightly less than the diameter of the wafer being treated so that only the edge region of the wafer extends into the toroidal plasma cavity. An inert gas is flowed across a front and back side of the wafer into the plasma cavity. A reactive gas is flowed directly into the plasma cavity. The gases exit the plasma cavity without flowing over the surface of the wafer.
摘要翻译：用于处理晶片边缘区域的方法和装置。环形等离子体腔的内径略小于被处理的晶片的直径，使得只有晶片的边缘区域延伸到环形等离子体腔中。惰性气体流过晶片的前侧和后侧进入等离子体腔。反应气体直接流入等离子体腔。气体离开等离子体腔而不流过晶片表面。

9. 发明授权

US08056604B2 Process for preparing a test casting and test casting prepared by the process 失效
标题翻译：用于制备由该方法制备的测试铸造和测试铸件的方法
公开(公告)号：US08056604B2
公开(公告)日：2011-11-15
申请号：US12554330
申请日：2009-09-04
申请人： Flavia Cunha Duncan , Jorg Kroker , Steven Johnston
发明人： Flavia Cunha Duncan , Jorg Kroker , Steven Johnston
IPC分类号： B22D46/00
CPC分类号： B22D46/00 , B22D2/00
摘要： A test casting is useful for predicting the severity of skin that will form when compacted graphite iron or ductile iron is cast using a selected foundry mix. The mold is made from the foundry mix and has a gating system with at least two ingates, and with a hollow cylindrical shape associated with each ingate. The hollow cylindrical shapes are substantially the same height, but the diameter of each varies by at least 20% from the diameter of any of the other cylindrical shapes. Molten metal poured into the gating system fills each of the hollow cylindrical shapes. When the metal cools and solidifies, a solid cylinder of the metal is produced in each hollow cylindrical shape. The solid metal cylinders, each with a distinct diameter, are cut and inspected to measure the skin formed thereon.
摘要翻译：测试铸件可用于预测当使用选定的铸造混合物铸造压实的石墨铁或球墨铸铁时将形成的皮肤的严重性。模具由铸造混合物制成并且具有至少两个浇口的浇注系统，并且具有与每个浇口相关联的中空圆柱形形状。中空的圆柱形形状基本上是相同的高度，但是每个直径从任何其它圆柱形状的直径变化至少20％。浇注浇注系统中的熔融金属填充每个中空圆柱形状。当金属冷却并固化时，在每个中空圆筒形状中制造金属的实心圆柱体。每个具有不同直径的固体金属圆筒被切割和检查以测量其上形成的皮肤。

10. 发明申请

US20060223300A1 Organometallic precursors for the chemical phase deposition of metal films in interconnect applications 有权
标题翻译：用于金属膜在互连应用中的化学相沉积的有机金属前体
公开(公告)号：US20060223300A1
公开(公告)日：2006-10-05
申请号：US11096860
申请日：2005-03-31
申请人： Harsono Simka , Juan Dominguez , Steven Johnston , Adrien Lavoie , Kevin O'Brien
发明人： Harsono Simka , Juan Dominguez , Steven Johnston , Adrien Lavoie , Kevin O'Brien
IPC分类号： H01L21/4763
CPC分类号： H01L21/28556 , C23C16/18 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76856 , H01L21/76858 , H01L21/76862 , H01L21/76864 , H01L21/76871 , H01L21/76873
摘要： Chemical phase deposition processes utilizing organometallic precursors to form thin films are herein described. The organometallic precursors may include a single metal center or multiple metal centers. The chemical phase deposition may be chemical vapor deposition (CVD), atomic layer deposition (ALD), or hybrid CVD and ALD. The use of these chemical phase deposition processes with the organometallic precursors allows for the conformal deposition of films within openings having widths of less than 100 nm and more particularly less than 50 nm to form thin films such as barrier layers, seed layers, and adhesion layers.
摘要翻译：在此描述利用有机金属前体形成薄膜的化学相沉积方法。有机金属前体可以包括单个金属中心或多个金属中心。化学相沉积可以是化学气相沉积（CVD），原子层沉积（ALD）或混合CVD和ALD。这些化学相沉积方法与有机金属前体的使用允许膜在宽度小于100nm，更特别地小于50nm的开口内的共形沉积，以形成薄膜，例如阻挡层，种子层和粘附层。

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