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1. 发明授权

US08362505B2 Optical device and the forming method thereof 有权
标题翻译：光学装置及其形成方法
公开(公告)号：US08362505B2
公开(公告)日：2013-01-29
申请号：US12408795
申请日：2009-03-23
申请人： Tzong-Liang Tsai , Lin-Chieh Kao , Shu-Ying Yang
发明人： Tzong-Liang Tsai , Lin-Chieh Kao , Shu-Ying Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , H01L33/46
摘要： An optical device is provided which includes a first electrode; a substrate disposed on the first electrode; a multi-layer structure disposed on the substrate, and the multi-layer structure consisted of a plurality of insulating layers with different refractive indices formed alternately; a first conductive semiconductor layer disposed on the substrate to cover the multi-layer structure; an active layer disposed on the first conductive semiconductor layer; a second conductive semiconductor layer disposed on the active layer; a transparent conductive layer disposed on the second conductive semiconductor layer; and a second electrode disposed on the transparent conductive layer, thereby, the multi-layer structure can increase the light reflective effect or anti-reflective effect within the optical device to improve the light emitting-efficiency.
摘要翻译：提供一种光学装置，其包括第一电极; 设置在所述第一电极上的基板; 设置在所述基板上的多层结构，所述多层结构由交替形成的具有不同折射率的多个绝缘层构成; 设置在所述基板上以覆盖所述多层结构的第一导电半导体层; 设置在所述第一导电半导体层上的有源层; 设置在所述有源层上的第二导电半导体层; 设置在所述第二导电半导体层上的透明导电层; 以及设置在透明导电层上的第二电极，由此，多层结构可以增加光学器件内的光反射效果或抗反射效果，以提高发光效率。

2. 发明授权

US07999273B2 Light emitting device having pillar structure with roughness surface and the forming method thereof 有权
标题翻译：具有粗糙表面的柱结构的发光装置及其形成方法
公开(公告)号：US07999273B2
公开(公告)日：2011-08-16
申请号：US12414753
申请日：2009-03-31
申请人： Tzong-Liang Tsai , Lin-Chieh Kao
发明人： Tzong-Liang Tsai , Lin-Chieh Kao
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L33/42
摘要： A light emitting device is provided which includes a substrate, a first semiconductor layer having a first region and a second region on the substrate; ac active layer is formed on the first region of the first semiconductor layer; a second semiconductor layer is formed on the active surface layer and the portion surface of the second semiconductor layer is a rough surface; a plurality of pillar structures with a hollow structure, and both of the outer surface and inner surface of the pillar structures are rough surface; a transparent conductive layer is formed to cover the plurality of pillar structures; a first electrode is formed on the transparent conductive layer; and a second electrode is formed on the second region of the first semiconductor layer.
摘要翻译：提供了一种发光器件，其包括衬底，在衬底上具有第一区域和第二区域的第一半导体层; 交流有源层形成在第一半导体层的第一区域上; 在有源表面层上形成第二半导体层，第二半导体层的部分表面是粗糙表面; 具有中空结构的多个柱结构，并且柱结构的外表面和内表面都是粗糙的表面; 形成透明导电层以覆盖多个支柱结构; 在透明导电层上形成第一电极; 并且第二电极形成在第一半导体层的第二区域上。

3. 发明授权

US07745837B2 Semiconductor light-emitting device with high light-extraction efficiency and method for fabricating the same 有权
标题翻译：具有高光提取效率的半导体发光器件及其制造方法
公开(公告)号：US07745837B2
公开(公告)日：2010-06-29
申请号：US12000064
申请日：2007-12-07
申请人： Tzong-Liang Tsai
发明人： Tzong-Liang Tsai
IPC分类号： H01L29/167
CPC分类号： H01L33/10 , H01L33/02 , H01L33/22
摘要： The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a first semiconductor material layer, a multi-layer structure and an ohmic electrode structure. The substrate has a first upper surface and a plurality of recesses formed on the first upper surface. The first semiconductor material layer is formed on the first upper surface of the substrate and has a second upper surface. The multi-layer structure is formed on the second upper surface of the first semiconductor material layer and includes a light-emitting region. The ohmic electrode structure is formed on the multi-layer structure. In particular, the first semiconductor material layer has a refractive index different from those of the substrate and a bottom-most layer of the multi-layer structure.
摘要翻译：本发明公开了一种半导体发光器件及其制造方法。根据本发明的半导体发光器件包括衬底，第一半导体材料层，多层结构和欧姆电极结构。基板具有形成在第一上表面上的第一上表面和多个凹部。第一半导体材料层形成在基板的第一上表面上并具有第二上表面。多层结构形成在第一半导体材料层的第二上表面上并且包括发光区域。欧姆电极结构形成在多层结构上。特别地，第一半导体材料层的折射率与基板和多层结构的最底层的折射率不同。

4. 发明申请

US20090200667A1 OHMIC CONTACT FILM IN SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件中的OHMIC接触膜
公开(公告)号：US20090200667A1
公开(公告)日：2009-08-13
申请号：US12426061
申请日：2009-04-17
申请人： Chiung-Chi TSAI , Tzong-Liang Tsai , Yu-Chu Li
发明人： Chiung-Chi TSAI , Tzong-Liang Tsai , Yu-Chu Li
IPC分类号： H01L23/532
CPC分类号： H01L33/26 , H01L33/40
摘要： The invention provides an ohmic contact film formed between a doped semiconductor material layer and a conductive material layer of a semiconductor device. The composition of the ohmic contact film according to a preferred embodiment of the invention is represented by the general formula MxQzNy, where M represents the II group chemical element, Q represents the IV group chemical element, N represents the V group chemical element, 1≦x≦3, 1≦y≦3, 1≦z≦3, and x and y and z are molar numbers.
摘要翻译：本发明提供了形成在半导体器件的掺杂半导体材料层和导电材料层之间的欧姆接触膜。根据本发明优选实施方案的欧姆接触膜的组成由通式MxQzNy表示，其中M表示II族化学元素，Q表示IV族化学元素，N表示V基团化学元素， = x <= 3,1 <= y <= 3,1 <= z <= 3，x和y和z是摩尔数。

5. 发明授权

US07498607B2 Epi-structure with uneven multi-quantum well and the method thereof 有权
标题翻译：具有不均匀多量子阱的Epi结构及其方法
公开(公告)号：US07498607B2
公开(公告)日：2009-03-03
申请号：US11798750
申请日：2007-05-16
申请人： Tzong-Liang Tsai , Chih-Ching Cheng
发明人： Tzong-Liang Tsai , Chih-Ching Cheng
IPC分类号： H01L29/22 , H01L33/00 , H01L29/24
CPC分类号： H01L33/24 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333 , H01S2304/04
摘要： An Epi-Structure of light-emitting device, comprising: a first semiconductor conductive layer forming on a substrate; an active layer forming on a first semiconductor conductive layer with Multi-Quantum Well (MQW); and a second semiconductor conductive layer forming on the active layer; wherein a plurality of particles formed by at least one hetero-material are scattered between the first semiconductor conductive layer and the active layer in order to form an uneven Multi-Quantum Well.
摘要翻译：发光装置的Epi结构，包括：在基板上形成的第一半导体导电层; 在具有多量子阱（MQW）的第一半导体导电层上形成的有源层; 以及形成在所述有源层上的第二半导体导电层; 其中由至少一种异质材料形成的多个颗粒在第一半导体导电层和活性层之间被散射，以形成不均匀的多量子阱。

6. 发明申请

US20090008624A1 Optoelectronic device 审中-公开
标题翻译：光电器件
公开(公告)号：US20090008624A1
公开(公告)日：2009-01-08
申请号：US11984062
申请日：2007-11-13
申请人： Tzong-Liang Tsai , Yu-Chu Li
发明人： Tzong-Liang Tsai , Yu-Chu Li
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L21/0237 , H01L21/0242 , H01L21/02439 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L33/24 , H01L33/32
摘要： The present invention provides an optoelectronic device, which includes a first electrode, a substrate on the first electrode, and a buffer layer on the substrate. The buffer layer further includes a first gallium nitride based compound layer on the substrate, a II-V group compound layer on the first gallium nitride based compound layer, a second gallium nitride based compound layer on the II-V group compound layer, and a third gallium nitride based compound layer on the second gallium nitride based compound layer. Then, a first semiconductor conductive layer is formed on the buffer layer; an active layer is formed on the first semiconductor conductive layer, in which the active layer is an uneven Multi-Quantum Well; a second semiconductor conductive layer on the active layer; a transparent conductive layer on the second semiconductor conductive layer; and a second electrode on the transparent conductive layer.
摘要翻译：本发明提供一种光电器件，其包括第一电极，第一电极上的衬底和衬底上的缓冲层。缓冲层还包括在基板上的第一氮化镓基化合物层，第一氮化镓基化合物层上的II-V族化合物层，II-V族化合物层上的第二氮化镓基化合物层和第二氮化镓基化合物层上的第三氮化镓基化合物层。然后，在缓冲层上形成第一半导体导电层; 在第一半导体导电层上形成有源层，其中有源层是不均匀的多量子阱; 在所述有源层上的第二半导体导电层; 第二半导体层上的透明导电层; 和在透明导电层上的第二电极。

7. 发明申请

US20080283820A1 LED packaged structure and applications of LED as light source 有权
标题翻译： LED封装结构和应用LED作为光源
公开(公告)号：US20080283820A1
公开(公告)日：2008-11-20
申请号：US11984730
申请日：2007-11-21
申请人： Tzong-Liang Tsai , Chih-Ching Cheng
发明人： Tzong-Liang Tsai , Chih-Ching Cheng
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , F21K9/27 , F21Y2103/10 , F21Y2115/10 , H01L33/06
摘要： LED packaged structures and applications thereof are disclosed, characterized in that: an active layer in the LED or the LED packaged structure is formed on a first semiconductor conductive layer with multi-quantum wells; and a second semiconductor conductive layer is formed on the active layer; wherein a plurality of particles formed by at least one hetero-material are scattered between the first semiconductor conductive layer and the active layer in order to form an uneven multi-quantum well.
摘要翻译：公开了LED封装结构及其应用，其特征在于：在具有多量子阱的第一半导体导电层上形成LED或LED封装结构中的有源层; 并且在所述有源层上形成第二半导体导电层; 其中由至少一种异质材料形成的多个颗粒在第一半导体导电层和有源层之间被散射，以形成不均匀的多量子阱。

8. 发明申请

US20080277678A1 Light emitting device and method for making the same 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：US20080277678A1
公开(公告)日：2008-11-13
申请号：US11801155
申请日：2007-05-08
申请人： Yu-Chu Li , Chiung-Chi Tsai , Tzong-Liang Tsai , Su-Hui Lin
发明人： Yu-Chu Li , Chiung-Chi Tsai , Tzong-Liang Tsai , Su-Hui Lin
IPC分类号： H01L29/22 , H01L21/00 , H01L27/15
CPC分类号： H01L33/22 , H01L33/38
摘要： A method for making a light emitting device includes: forming a multi-layer structure on a substrate; forming a patterned mask material on one side of the multi-layer structure such that the patterned mask material covers an etch region of the multi-layer structure; forming a roughened layer on the multi-layer structure; removing the patterned mask material from the multi-layer structure so as to expose the etch region of the multi-layer structure; forming an etch mask material on the roughened layer; dry etching the multi-layer structure at the exposed etch region so as to define an electrode-forming region on the first semiconductor layer that corresponds to the etch region of the multi-layer structure; and forming an electrode on the electrode-forming region of the first semiconductor layer.
摘要翻译：一种制造发光器件的方法包括：在衬底上形成多层结构; 在所述多层结构的一侧上形成图案化掩模材料，使得所述图案化掩模材料覆盖所述多层结构的蚀刻区域; 在多层结构上形成粗糙层; 从所述多层结构中去除所述图案化掩模材料，以暴露所述多层结构的蚀刻区域; 在粗糙层上形成蚀刻掩模材料; 在暴露的蚀刻区域干蚀刻多层结构，以便在对应于多层结构的蚀刻区域的第一半导体层上限定电极形成区域; 以及在所述第一半导体层的电极形成区上形成电极。

9. 发明申请

US20050014303A1 Method for manufacturing semiconductor light-emitting device 审中-公开
标题翻译：半导体发光元件的制造方法
公开(公告)号：US20050014303A1
公开(公告)日：2005-01-20
申请号：US10788378
申请日：2004-03-01
申请人： Tzong-Liang Tsai , Chih-Sung Chang , Tzer-Perng Chen
发明人： Tzong-Liang Tsai , Chih-Sung Chang , Tzer-Perng Chen
IPC分类号： H01L33/22 , H01L33/24 , H01L33/38 , H01L21/00
CPC分类号： H01L33/24 , H01L33/22
摘要： A method for manufacturing a semiconductor light-emitting device. The semiconductor light-emitting device has a substrate, and a semiconductor layer, a n-type semiconductor layer, and a p-type semiconductor layer successively formed atop the substrate. The method forms an intermediate layer having a predetermined pattern between the substrate and the semiconductor layer, or between the semiconductor layer and the n-type semiconductor layer, or between the n-type semiconductor layer and the p-type semiconductor layer. The p-type semiconductor layer has an uneven top layer due to the intermediate layer having a predetermined pattern and the total internal reflection of the LED can be reduced. The intermediate layer is a conductive material to reduce serial resistance of the LED.
摘要翻译：一种半导体发光器件的制造方法。半导体发光器件具有在衬底上依次形成的衬底和半导体层，n型半导体层和p型半导体层。该方法在衬底和半导体层之间，或者在半导体层和n型半导体层之间或在n型半导体层和p型半导体层之间形成具有预定图案的中间层。由于具有预定图案的中间层，p型半导体层具有不均匀的顶层，并且可以减少LED的全内反射。中间层是降低LED串联电阻的导电材料。

10. 发明授权

US06462357B1 Epitaxial growth of nitride compound semiconductor 有权
标题翻译：氮化物半导体的外延生长
公开(公告)号：US06462357B1
公开(公告)日：2002-10-08
申请号：US09750351
申请日：2000-12-29
申请人： Tzong-Liang Tsai , Chih-Sung Chang
发明人： Tzong-Liang Tsai , Chih-Sung Chang
IPC分类号： H01L3300
CPC分类号： H01L33/0075 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L33/007
摘要： The present invention provides materials and structures to reduce dislocation density when growing a III-nitride compound semiconductor. A II-nitride compound single crystal-island layer is included in the semiconductor structure, and III-nitride compound semiconductor layers are to grow thereon. It reduces the dislocation density resulted from the difference between the lattice constants of the GaN compound semiconductor layers and the substrate. It also improves the crystallization property of the III-nitride compound semiconductor.
摘要翻译：本发明提供了当生长III族氮化物化合物半导体时减少位错密度的材料和结构。半导体结构中包含II族氮化物化合物单晶 - 岛层，并且在其上生长III族氮化物化合物半导体层。它降低了由GaN化合物半导体层和衬底的晶格常数之间的差异引起的位错密度。它还改善了III族氮化物半导体的结晶性能。

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